摘要:
An input buffer which detects an input signal. The input buffer including an output node, a first buffer, and a second buffer. The first buffer may control the voltage level of the output node when the voltage level of a reference voltage signal is equal to a predetermined voltage level. The second buffer may control the voltage level of the output node in response to the input signal when the voltage level of the reference voltage signal is lower than the predetermined voltage level. The second buffer may maintain the output node at a first level. The second buffer may include an output control section and a level control unit. The output control section may receive the input signal and generate a level output signal at a second level. The level control section may generate a control signal which maintains the output node at the first level, in response to the level output signal when the voltage level of the reference voltage signal is lower than the predetermined voltage level of the first voltage and may intercept the control signal when the voltage level of the reference voltage signal is equal to the predetermined voltage level.
摘要:
An input buffer which detects an input signal. The input buffer including an output node, a first buffer, and a second buffer. The first buffer may control the voltage level of the output node when the voltage level of a reference voltage signal is equal to a predetermined voltage level. The second buffer may control the voltage level of the output node in response to the input signal when the voltage level of the reference voltage signal is lower than the predetermined voltage level. The second buffer may maintain the output node at a first level. The second buffer may include an output control section and a level control unit. The output control section may receive the input signal and generate a level output signal at a second level. The level control section may generate a control signal which maintains the output node at the first level, in response to the level output signal when the voltage level of the reference voltage signal is lower than the predetermined voltage level of the first voltage and may intercept the control signal when the voltage level of the reference voltage signal is equal to the predetermined voltage level.
摘要:
A signal transmission circuit and a method equalize differential delay characteristics of two signal transmission lines. A controllable delay unit is connected serially to the second line, so as to compensate by adding its internal delay. An auxiliary signal transmission line replicates the second transmission line, while it processes the input signal of the first. A controlling unit compares the output signal of the first transmission line and the of the auxiliary signal transmission line, and adjusts dynamically the internal delay of the controllable delay unit, to attain continuous synchronization. A data latch circuit synchronizes the delays of data paths by having one controllable delay units in each of the data paths.
摘要:
An input buffer includes an amplifier circuit, such as a differential amplifier circuit, inverting amplifier circuit or pull-up/pull-down amplifier circuit. A momentary boost circuit is coupled to an input buffer input terminal, an input terminal of the amplifier circuit, and an output terminal of the amplifier circuit, and is operative to generate a boosted input signal at the input terminal of the amplifier circuit from an input signal at an input buffer input terminal for an interval that is terminated responsive to an output signal at the output terminal of the amplifier circuit. The momentary boost circuit may include a detector circuit coupled to the output terminal of the amplifier circuit and operative to generate a control signal responsive to a transition of the output signal, and a boost circuit, coupled between the input buffer input terminal and the input terminal of the amplifier circuit and operatively associated with the detector circuit, that receives the input signal at the input buffer input terminal and generates the boosted input signal at the input terminal of the amplifier circuit from the received input signal responsive to the control signal. For example, the boost circuit may include a capacitor coupled between the input buffer input terminal and the input terminal of the amplifier circuit, and a switch that couples and decouples the input terminal of the amplifier circuit to a reference voltage source responsive to the control signal. The detector circuit may be operative to generate a pulse responsive to a transition of the output signal, and the switch may be operative to couple the input terminal of the amplifier circuit to the reference voltage source responsive to the pulse.
摘要:
A signal is duty-cycle corrected by delaying the signal to generate a delayed version of the signal and generating an output signal that transitions from a first state to a second state responsive to a transition of the signal from the first state to the second state and a transition of the delayed version of the signal from the second state to the first state. The output signal transitions from the second state to the first state responsive to a transition of the signal from the second state to the first state and a transition of the delayed version of the signal from the first state to the second state.
摘要:
An embodiment of the invention comprises a digital phase detector with substantially zero phase offset. The digital phase detector receives a clock signal and a reference clock signal and provides a phase indicator signal to identify whether the clock signal leads or lags the reference clock signal. An embodiment of the invention comprises a method that adds substantially zero phase offset in processing an input clock signal and a delayed clock signal to generate a control signal. The control signal is processed in a variable delay line to generate the delayed clock signal. In an embodiment, a first processor comprises a delay locked loop having a digital phase detector, the digital phase detector comprising a first differential sense amplifier cross-coupled to a second differential sense amplifier, the digital phase detector receiving a clock signal and generating one or more delayed clock signals, a control signal, and a gated data signal.
摘要:
A computer memory, having one or more of a semiconductor memory device having an internal memory array comprising a plurality of semiconductor dynamic random access memory (DRAM) cells arranged in a matrix of rows and columns, and provided as a memory module rank of such memory devices arranged in an array on a DIMM of one or more of said semiconductor memory device on a substrate which can be coupled via a memory device data interface to a memory system as a memory subsystem, each of said memory device having a low power shut-down state that can be activated using a common memory data interface. Control of power to a DRAM issues over the data interface two commands to a DRAM power control command decode, a power-state program signal and a power-state reset signal as a power-state control commands to control the power state of said DRAM, and to activate for READ/WRITE a memory cell as a normal active or spare device.
摘要:
A method and structures are provided for implementing decoupling capacitors within a DRAM TSV stack. A DRAM is formed with a plurality of TSVs extending completely through the substrate and filled with a conducting material. A layer of glass is grown on both the top and bottom of the DRAM providing an insulator. A layer of metal is grown on each glass layer providing a conductor. The metal and glass layers are etched through to TSVs with a gap provided around the perimeter of via pads. A respective solder ball is formed on the TSVs to connect to another DRAM chip in the DRAM TSV stack. The metal layers are connected to at least one TSV by one respective solder ball and are connected to a voltage source and a dielectric is inserted between the metal layers in the DRAM TSV stack to complete the decoupling capacitor.
摘要:
A method and structure are provided for implementing multiple different types of dies for memory stacking. A common wafer is provided with a predefined reticle type. The reticle type includes a plurality of arrays, and a plurality of periphery segments. A plurality of through-silicon-vias (TSVs) is placed at boundaries between array and periphery segments. Multiple different types of dies for memory stacking are obtained based upon selected scribing of the dies from the common wafer.
摘要:
A memory system with a programmable refresh cycle including a memory device that includes a memory array of memory cells and refresh circuitry that is in communication with the memory array and with a memory controller. The refresh circuitry is configured to receive a refresh command from the memory controller and for refreshing a number of the memory cells in the memory device in response to receiving the refresh command. The number of memory cells refreshed in response to receiving the refresh command is programmable.