Spiraling polyphase electrodes for electrostatic chuck

    公开(公告)号:US11417557B2

    公开(公告)日:2022-08-16

    申请号:US17122959

    申请日:2020-12-15

    Applicant: ENTEGRIS, INC.

    Abstract: Electrostatic chucks include multiple electrodes, each having a spiral shape surrounding a center of a surface of the electrostatic chuck, to provide a polyphase electrostatic chuck. Each electrode can be connected to a different phase of power. The spiral shapes can each avoid one another as well as avoiding holes or openings in the surface of the electrostatic chuck. The spiral shapes can be algorithmically determined using a processor. These electrostatic chucks can include three or more electrodes. Methods of manufacture of the electrostatic chucks include determining shapes for each of the electrodes and providing each of the electrodes.

    Electrostatic chuck with charge dissipation coating

    公开(公告)号:US11742781B2

    公开(公告)日:2023-08-29

    申请号:US16682497

    申请日:2019-11-13

    Applicant: ENTEGRIS, INC.

    CPC classification number: H02N13/00 B23Q3/152 H01L21/6831 H01L21/6833

    Abstract: An electrostatic chuck solves the problem of wafer sticking by providing conductive paths on raised embossments that are bridged together and are connected to ground that support the wafer substrate above the surface of the electrostatic chuck. Further, laterally spaced electrode patterns and electrode elements which are spaced laterally and longitudinally away from the raised embossments reduce or eliminate electrical coupling during wafer clamping between conductively coated embossments and the electrode elements, thereby creating a low resistance path for charges remaining on the wafer after declamping to promptly travel to ground. The conductive bridge and electrode pattern configuration also substantially reduces or eliminates any charge build up on the conductive bridge(s) during clamping in order that charge build up in “islands” (worn portions of the insulator layer of the main field area) do not affect the charge dissipation from the wafer substrate through the conductive bridges to ground.

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