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50 条记录 (耗时 0.022 秒)

    Process for the removal of resist material
    1.
    发明授权
    Process for the removal of resist material 失效
    去除抗蚀材料的方法

    公开(公告)号：US06245188B1

    公开(公告)日：2001-06-12

    申请号：US09348834

    申请日：1999-07-08

    申请人： Eiji Toyoda ,  Makoto Namikawa ,  Takuji Okeyui

    发明人： Eiji Toyoda ,  Makoto Namikawa ,  Takuji Okeyui

    IPC分类号： B32B3500

    CPC分类号： G03F7/42 ,  B08B7/0028 ,  Y10S156/922 ,  Y10T156/11 ,  Y10T156/1147 ,  Y10T156/1179

    摘要： The present invention provides a process for the peeling of a resist material with a pressure-sensitive adhesive sheet which involves the improvement in the removal of resist material or the enhancement of peelability of resist material to certainly remove the resist material from the object regardless of the properties or treated state of the resist material. The process comprises (1) after the application of the pressure-sensitive adhesive sheet, effecting a stress-imparting treatment which causes shrinkage or expansion of the pressure-sensitive adhesive sheet so that a stress develops at the interface between the resist material and the object or (2) prior to the application of the resist material to the object, effecting surface treatment to the object such that the surface of the object has a surface free energy of to not greater than 60 dyne/cm.

    摘要翻译： 本发明提供一种用压敏粘合片剥离抗蚀剂材料的方法，该方法涉及抗蚀剂材料的去除改进或抗蚀剂材料的剥离性的提高，以确保从物体上除去抗蚀剂材料，而不管 性质或抗蚀剂材料的处理状态。 该方法包括（1）在施加压敏粘合片之后，进行应力赋予处理，使压敏粘合片收缩或膨胀，使得在抗蚀剂材料和物体之间的界面产生应力 或（2）在将抗蚀剂材料施加到物体之前，对物体进行表面处理，使得物体的表面具有不大于60达因/厘米3的表面自由能。

    Process for the removal of resist material
    2.
    发明授权
    Process for the removal of resist material 失效
    去除抗蚀材料的方法

    公开(公告)号：US06565704B2

    公开(公告)日：2003-05-20

    申请号：US09833812

    申请日：2001-04-13

    申请人： Eiji Toyoda ,  Makoto Namikawa ,  Takuji Okeyui

    发明人： Eiji Toyoda ,  Makoto Namikawa ,  Takuji Okeyui

    IPC分类号： B32B3500

    CPC分类号： G03F7/42 ,  B08B7/0028 ,  Y10S156/922 ,  Y10T156/11 ,  Y10T156/1147 ,  Y10T156/1179

    摘要： The present invention provides a process for the peeling of a resist material with a pressure-sensitive adhesive sheet which involves the improvement in the removal of resist material or the enhancement of peelability of resist material to certainly remove the resist material from the object regardless of the properties or treated state of the resist material. The process comprises (1) after the application of the pressure-sensitive adhesive sheet, effecting a stress-imparting treatment which causes shrinkage or expansion of the pressure-sensitive adhesive sheet so that a stress develops at the interface between the resist material and the object or (2) prior to the application of the resist material to the object, effecting surface treatment to the object such that the surface of the object has a surface free energy of to not greater than 60 dyne/cm.

    摘要翻译： 本发明提供一种用压敏粘合片剥离抗蚀剂材料的方法，该方法涉及抗蚀剂材料的去除改进或抗蚀剂材料的剥离性的提高，以确保从物体上除去抗蚀剂材料，而不管 性质或抗蚀剂材料的处理状态。 该方法包括（1）在施加压敏粘合片之后，进行应力赋予处理，使压敏粘合片收缩或膨胀，使得在抗蚀剂材料和物体之间的界面产生应力 或（2）在将抗蚀剂材料施加到物体之前，对物体进行表面处理，使得物体的表面具有不大于60达因/厘米3的表面自由能。

    Resist removing apparatus and method
    6.
    发明授权
    Resist removing apparatus and method 失效
    抗蚀剂除去装置和方法

    公开(公告)号：US06235144B1

    公开(公告)日：2001-05-22

    申请号：US09203263

    申请日：1998-12-01

    申请人： Masayuki Yamamoto ,  Makoto Namikawa ,  Eiji Toyoda ,  Shigeji Kuroda ,  Saburo Miyamoto ,  Takao Matsushita

    发明人： Masayuki Yamamoto ,  Makoto Namikawa ,  Eiji Toyoda ,  Shigeji Kuroda ,  Saburo Miyamoto ,  Takao Matsushita

    IPC分类号： B32B3500

    CPC分类号： H01L21/67132 ,  B08B7/00 ,  B08B7/0028 ,  B08B7/0035 ,  B29C63/0013 ,  G03F7/42 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/1189

    摘要： A resist removing apparatus for removing an unwanted resist pattern from a surface of wafer W by applying an adhesive tape to the surface of wafer W having the resist patterns formed thereon, and separating the adhesive tape from the surface of wafer W. The apparatus includes an adhesive removing mechanism 13 for treating the surface of wafer W after the adhesive tape is separated therefrom. The adhesive removing mechanism 13 may be effective when constructed to jet ozone to the surface of wafer W heated, to irradiate the surface of wafer W heated, with ultraviolet rays, or to jet ozone to the surface of wafer W heated and irradiate the surface with ultraviolet rays.

    摘要翻译： 一种抗蚀剂去除装置，用于通过在其上形成有抗蚀剂图案的晶片W的表面上涂布粘合带，从晶片W的表面除去不需要的抗蚀剂图案，并将粘合带从晶片W的表面分离。该装置包括： 粘合剂去除机构13，用于在粘合带分离之后处理晶片W的表面。 当粘合剂去除机构13被构造成将臭氧喷射到被加热的晶片W的表面上，以紫外线照射加热的晶片W的表面，或者将臭氧喷射到加热并照射表面的晶片W的表面时， 紫外线。

    Cleaning sheet and method for cleaning substrate processing apparatus
    7.
    发明申请
    Cleaning sheet and method for cleaning substrate processing apparatus 有权

    公开(公告)号：US20060151004A1

    公开(公告)日：2006-07-13

    申请号：US10535842

    申请日：2003-11-10

    申请人： Yoshio Terada ,  Makoto Namikawa ,  Eiji Toyoda

    发明人： Yoshio Terada ,  Makoto Namikawa ,  Eiji Toyoda

    IPC分类号： B08B7/00

    CPC分类号： B08B1/00 ,  B08B3/08 ,  G02F2001/1316 ,  Y10T428/14 ,  Y10T428/28

    摘要： An aim of the invention is to provide a cleaning member which causes no contamination of a substrate processing equipment by ionic impurities in the removal of foreign matters attached to the interior of the equipment through cleaning by the conveyance thereof into the equipment, a cleaning member which causes little contamination of a substrate processing equipment by metal impurities attributed to a protective film in the removal of foreign matters attached to the interior of the equipment through cleaning by the conveyance thereof into the equipment and a cleaning member which causes no contamination of a substrate processing equipment by metal impurities in the removal of foreign matters attached to the interior of the equipment through cleaning by the conveyance thereof into the equipment. The means for solving the aims of the invention concerns a cleaning sheet comprising a cleaning layer provided on one side of a base material, from which cleaning layer F−, Cl−, Br−, NO2−, NO3−, PO43−, SO42−, Na+, NH4+ and K+ are extractable with pure water each in an amount of not greater than 20 ppm (as extracted under boiling at 120° C. for 1 hour), and a pressure-sensitive adhesive layer provided on the other, a carrying material with cleaning capacity comprising the aforementioned cleaning sheet laminated on a carrying material with a pressure-sensitive adhesive layer and a method for cleaning a substrate processing equipment which comprises conveying the aforementioned carrying material with cleaning capacity into the substrate processing equipment; a cleaning sheet comprising a releasable protective film laminated on a cleaning layer, wherein the protective film is formed by a material from which metal elements such as Na, K, Ca, Mg, Al, Ti, Cr, Mn, Fe, Co, Ni, Cu and Zn or compounds thereof are transferred to a silicon wafer each in an amount of not greater than 1×1012 atoms/cm2 as calculated in terms of metal element when the protective film is brought into contact with (the mirror surface of) the silicon wafer at 23° C. for 1 minute, a carrying material with cleaning capacity comprising the aforementioned cleaning sheet laminated on a carrying material with a pressure-sensitive adhesive layer and a method for cleaning a substrate processing equipment which comprises conveying the aforementioned carrying material with cleaning capacity into the substrate processing equipment with the releasable protective film peeled off the cleaning layer; and a cleaning sheet comprising a cleaning layer provided on one side of a base material, which cleaning layer containing metal elements such as Na, K, Mg, Al, Ca, Ti, Cr, Mn, Fe, Co, Ni, Cu and Zn or compounds thereof each in an amount of not greater than 5 ppm (μg/g) as calculated in terms of metal element, and a pressure-sensitive adhesive layer provided on the other, a carrying material with cleaning capacity comprising the aforementioned cleaning sheet laminated on a carrying material with a pressure-sensitive adhesive layer and a method for cleaning a substrate processing equipment which comprises conveying the aforementioned carrying material with cleaning capacity into the substrate processing equipment.

    Cleaning sheet, conveying member using the same, and substrate processing equipment cleaning method using them
    9.
    发明授权
    Cleaning sheet, conveying member using the same, and substrate processing equipment cleaning method using them 有权
    清洁片，使用其的输送部件，以及使用它们的基板处理设备清洗方法

    公开(公告)号：US06821620B2

    公开(公告)日：2004-11-23

    申请号：US10311065

    申请日：2002-12-13

    申请人： Makoto Namikawa ,  Yoshio Terada ,  Eiji Toyoda

    发明人： Makoto Namikawa ,  Yoshio Terada ,  Eiji Toyoda

    IPC分类号： B32B2730

    CPC分类号： B08B1/00 ,  B08B7/00 ,  B08B7/0028 ,  Y10T428/1462 ,  Y10T428/1476 ,  Y10T428/1481 ,  Y10T428/28 ,  Y10T428/2839 ,  Y10T428/2891

    摘要： A cleaning sheet has a cleaning layer having a surface resistivity not less than 1×1013 &OHgr;/□. In a method of manufacturing a conveying member with a cleaning function, for sticking the cleaning sheet, in which the cleaning layer formed of an adhesive that is polymerized/cured by an active energy is provided onto one surface of a base material and an ordinary adhesive layer is provided onto the other surface thereof, onto the conveying member via an ordinary adhesive layer to have a shape larger than the shape of the conveying member and then cutting the cleaning sheet along a shape of the conveying member, wherein a polymerizing/curing reaction of the cleaning layer is carried out after the cleaning sheet is cut out into the shape of the conveying member.

    摘要翻译： 清洁片具有表面电阻率不小于1×10 13Ω/□的清洁层。 在制造具有清洁功能的输送部件的方法中，用于粘贴清洁片，其中将由活性能聚合/固化的粘合剂形成的清洁层设置在基材的一个表面上，并将普通粘合剂 层通过普通的粘合剂层被提供到其另一个表面上，以使其具有比输送构件的形状大的形状，然后沿着输送构件的形状切割清洁片，其中聚合/固化反应 在清洁片被切割成输送构件的形状之后进行清洁层。

    Process for the collective removal of resist material and side wall protective film
    10.
    发明授权
    Process for the collective removal of resist material and side wall protective film 失效
    用于集体除去抗蚀剂材料和侧壁保护膜的方法

    公开(公告)号：US06436220B1

    公开(公告)日：2002-08-20

    申请号：US09367099

    申请日：1999-08-10

    申请人： Eiji Toyoda ,  Makoto Namikawa ,  Kouichi Hashimoto ,  Seiichiro Shirai

    发明人： Eiji Toyoda ,  Makoto Namikawa ,  Kouichi Hashimoto ,  Seiichiro Shirai

    IPC分类号： B32B3120

    CPC分类号： H01L21/02071 ,  G03F7/34 ,  H01L21/027 ,  Y10T156/11

    摘要： The present invention is intended to collectively remove unnecessary resist material and side wall protective film after dry etching by side wall protection process, making it possible to simplify the process for the preparation of semiconductors, etc. The process according to the present invention comprises removing unnecessary resist material (3) left behind after dry etching by side wall protection process with a resist pattern (3) present on a semiconductor substrate (2) as a mask and side wall protective film (4) deposited on the side wall (22) of pattern, said process comprising the steps of applying an pressure-sensitive adhesive sheet (1) to said substrate (2), heating the pressure-sensitive adhesive layer (1) under pressure so that the pressure-sensitive adhesive (11) comes in contact with up to the side wall (4) of pattern, and then collectively peeling said pressure-sensitive adhesive sheet (1), said resist material (3) and said side wall protective film (4) off said substrate.

    摘要翻译： 本发明旨在通过侧壁保护工艺在干蚀刻之后集中地去除不需要的抗蚀剂材料和侧壁保护膜，从而可以简化制备半导体等的工艺。根据本发明的方法包括去除不必要的 在作为掩模的半导体基板（2）上存在的抗蚀剂图案（3）通过侧壁保护处理在干蚀刻后留下的抗蚀剂材料（3）和沉积在侧壁（22）上的侧壁保护膜（4） 所述方法包括以下步骤：将压敏粘合片（1）施加到所述基底（2）上，在压力下加压压敏粘合剂层（1），使得压敏粘合剂（11）接触 直到图案的侧壁（4），然后将所述压敏粘合片（1），所述抗蚀剂材料（3）和所述侧壁保护膜（4）从所述基体上共同剥离 te。