公开(公告)号：US09012920B2

公开(公告)日：2015-04-21

申请号：US13867328

申请日：2013-04-22

Applicant: Electronics and Telecommunications Research Institute

Inventor： Chull Won Ju ,  Hae Cheon Kim ,  Hyung Sup Yoon ,  Woo Jin Chang ,  Sang-Heung Lee ,  Dong-Young Kim ,  Jong-Won Lim ,  Dong Min Kang ,  Ho Kyun Ahn ,  Jong Min Lee ,  Eun Soo Nam

IPC: H01L29/20 ,  H01L29/66 ,  H01L29/417 ,  H01L29/778 ,  H01L23/00

CPC classification number: H01L29/2003 ,  H01L24/05 ,  H01L24/06 ,  H01L24/16 ,  H01L29/41758 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05568 ,  H01L2224/056 ,  H01L2224/06135 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81815 ,  H01L2924/00014

Abstract: Disclosed are a GaN (gallium nitride) compound power semiconductor device and a manufacturing method thereof. The gallium nitride compound power semiconductor device includes: a gallium nitride compound element formed by being grown on a wafer; a contact pad including a source, a drain, and a gate connecting with the gallium nitride compound element; a module substrate to which the nitride gallium compound element is flip-chip bonded; a bonding pad formed on the module substrate; and a bump formed on the bonding pad of the module substrate so that the contact pad and the bonding pad are flip-chip bonded. By this configuration, it is possible to reduce the process costs by forming the bump on the substrate based on the wafer level, rapidly emit the heat generated from an AlGaN HEMT device by forming the sub source contact pad and the sub drain contact pad of the substrate in the active region, and efficiently emit the heat generated from the AlGaN HEMT device by forming a via hole on the substrate and filling the via hole with the conductive metal.

Abstract translation: 公开了一种GaN（氮化镓）复合功率半导体器件及其制造方法。 氮化镓化合物功率半导体器件包括：通过在晶片上生长形成的氮化镓复合元素; 包括源极，漏极和与氮化镓复合元件连接的栅极的接触焊盘; 将氮化镓化合物元件倒装芯片接合的模块基板; 形成在所述模块基板上的焊盘; 以及形成在模块基板的焊盘上的凸点，使得接触焊盘和焊盘被倒装芯片接合。 通过这种结构，可以通过基于晶片级在基板上形成凸块来降低处理成本，通过形成子源接触焊盘和子漏极接触焊盘，快速地发射由AlGaN HEMT器件产生的热量 衬底，并且通过在衬底上形成通孔并用导电金属填充通孔，从而有效地发射由AlGaN HEMT器件产生的热量。

公开(公告)号：US08937002B2

公开(公告)日：2015-01-20

申请号：US14230031

申请日：2014-03-31

Applicant: Electronics and Telecommunications Research Institute

Inventor： Sung Bum Bae ,  Eun Soo Nam ,  Jae Kyoung Mun ,  Sung Bock Kim ,  Hae Cheon Kim ,  Chull Won Ju ,  Sang Choon Ko ,  Jong-Won Lim ,  Ho Kyun Ahn ,  Woo Jin Chang ,  Young Rak Park

IPC: H01L21/20 ,  H01L29/66 ,  H01L21/8252 ,  H01L27/06 ,  H01L27/088 ,  H01L21/02

CPC classification number: H01L29/66446 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02647 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0883

Abstract: The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.

Abstract translation: 本发明涉及一种氮化物电子器件及其制造方法，特别涉及一种氮化物电子器件及其制造方法，该氮化物电子器件及其制造方法可通过再生技术在同一衬底上实现各种氮化物一体化结构（ 用于包括III族元素如镓（Ga），铝（Al）和铟（In））和氮（III）的III族氮化物半导体电子器件中的半绝缘氮化镓（GaN）层的外延横向过度生长：ELOG） 。

公开(公告)号：US09209266B2

公开(公告)日：2015-12-08

申请号：US14555182

申请日：2014-11-26

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Jong-Won Lim ,  Ho Kyun Ahn ,  Young Rak Park ,  Dong Min Kang ,  Woo Jin Chang ,  Seong-il Kim ,  Sung Bum Bae ,  Sang-Heung Lee ,  Hyung Sup Yoon ,  Chull Won Ju ,  Jae Kyoung Mun ,  Eun Soo Nam

IPC: H01L21/265 ,  H01L21/336 ,  H01L21/28 ,  H01L29/66 ,  H01L29/423 ,  H01L29/778 ,  H01L29/16 ,  H01L21/311

CPC classification number: H01L29/66431 ,  H01L21/28255 ,  H01L21/31116 ,  H01L21/31144 ,  H01L29/1608 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/66068 ,  H01L29/7787

Abstract: Disclosed is a manufacturing method of a high electron mobility transistor. The method includes: forming a source electrode and a drain electrode on a substrate; forming a first insulating film having a first opening on an entire surface of the substrate, the first opening exposing a part of the substrate; forming a second insulating film having a second opening within the first opening, the second opening exposing a part of the substrate; forming a third insulating film having a third opening within the second opening, the third opening exposing a part of the substrate; etching a part of the first insulating film, the second insulating film and the third insulating film so as to expose the source electrode and the drain electrode; and forming a T-gate electrode on a support structure including the first insulating film, the second insulating film and the third insulating film.

Abstract translation: 公开了一种高电子迁移率晶体管的制造方法。 该方法包括：在基板上形成源电极和漏电极; 在所述基板的整个表面上形成具有第一开口的第一绝缘膜，所述第一开口暴露所述基板的一部分; 在所述第一开口内形成具有第二开口的第二绝缘膜，所述第二开口暴露所述基板的一部分; 在所述第二开口内形成具有第三开口的第三绝缘膜，所述第三开口暴露所述基板的一部分; 蚀刻第一绝缘膜，第二绝缘膜和第三绝缘膜的一部分，以使源电极和漏电极露出; 以及在包括第一绝缘膜，第二绝缘膜和第三绝缘膜的支撑结构上形成T栅电极。