公开(公告)号：US10134854B2

公开(公告)日：2018-11-20

申请号：US15248676

申请日：2016-08-26

申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

发明人： Ho Kyun Ahn ,  Dong Min Kang ,  Yong-Hwan Kwon ,  Dong-Young Kim ,  Seong Il Kim ,  Hae Cheon Kim ,  Eun Soo Nam ,  Jae Won Do ,  Byoung-Gue Min ,  Hyung Sup Yoon ,  Sang-Heung Lee ,  Jong Min Lee ,  Jong-Won Lim ,  Hyun Wook Jung ,  Kyu Jun Cho

IPC分类号： H01L29/40 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778 ,  H01L29/66

摘要： A high electron mobility transistor includes a substrate including a first surface and a second surface facing each other and having a via hole passing through the first surface and the second surface, an active layer on the first surface, a cap layer on the active layer and including a gate recess region exposing a portion of the active layer, a source electrode and a drain electrode on one of the cap layer and the active layer, an insulating layer on the source electrode and the drain electrode and having on opening corresponding to the gate recess region to expose the gate recess region, a first field electrode on the insulating layer, a gate electrode electrically connected to the first field electrode on the insulating layer, and a second field electrode on the second surface and contacting the active layer through the via hole.

公开(公告)号：US09012920B2

公开(公告)日：2015-04-21

申请号：US13867328

申请日：2013-04-22

申请人： Electronics and Telecommunications Research Institute

发明人： Chull Won Ju ,  Hae Cheon Kim ,  Hyung Sup Yoon ,  Woo Jin Chang ,  Sang-Heung Lee ,  Dong-Young Kim ,  Jong-Won Lim ,  Dong Min Kang ,  Ho Kyun Ahn ,  Jong Min Lee ,  Eun Soo Nam

IPC分类号： H01L29/20 ,  H01L29/66 ,  H01L29/417 ,  H01L29/778 ,  H01L23/00

CPC分类号： H01L29/2003 ,  H01L24/05 ,  H01L24/06 ,  H01L24/16 ,  H01L29/41758 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05568 ,  H01L2224/056 ,  H01L2224/06135 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81815 ,  H01L2924/00014

摘要： Disclosed are a GaN (gallium nitride) compound power semiconductor device and a manufacturing method thereof. The gallium nitride compound power semiconductor device includes: a gallium nitride compound element formed by being grown on a wafer; a contact pad including a source, a drain, and a gate connecting with the gallium nitride compound element; a module substrate to which the nitride gallium compound element is flip-chip bonded; a bonding pad formed on the module substrate; and a bump formed on the bonding pad of the module substrate so that the contact pad and the bonding pad are flip-chip bonded. By this configuration, it is possible to reduce the process costs by forming the bump on the substrate based on the wafer level, rapidly emit the heat generated from an AlGaN HEMT device by forming the sub source contact pad and the sub drain contact pad of the substrate in the active region, and efficiently emit the heat generated from the AlGaN HEMT device by forming a via hole on the substrate and filling the via hole with the conductive metal.

摘要翻译： 公开了一种GaN（氮化镓）复合功率半导体器件及其制造方法。 氮化镓化合物功率半导体器件包括：通过在晶片上生长形成的氮化镓复合元素; 包括源极，漏极和与氮化镓复合元件连接的栅极的接触焊盘; 将氮化镓化合物元件倒装芯片接合的模块基板; 形成在所述模块基板上的焊盘; 以及形成在模块基板的焊盘上的凸点，使得接触焊盘和焊盘被倒装芯片接合。 通过这种结构，可以通过基于晶片级在基板上形成凸块来降低处理成本，通过形成子源接触焊盘和子漏极接触焊盘，快速地发射由AlGaN HEMT器件产生的热量 衬底，并且通过在衬底上形成通孔并用导电金属填充通孔，从而有效地发射由AlGaN HEMT器件产生的热量。

公开(公告)号：US09837719B2

公开(公告)日：2017-12-05

申请号：US15229891

申请日：2016-08-05

申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

发明人： Dong-Young Kim ,  Dong Min Kang ,  Seong-Il Kim ,  Hae Cheon Kim ,  Jae Won Do ,  Byoung-Gue Min ,  Ho Kyun Ahn ,  Hyung Sup Yoon ,  Sang-Heung Lee ,  Jong Min Lee ,  Jong-Won Lim ,  Yoo Jin Jang ,  Hyun Wook Jung ,  Kyu Jun Cho ,  Chull Won Ju

IPC分类号： H01Q9/04 ,  H01Q1/50

CPC分类号： H01Q9/0407 ,  H01Q1/50 ,  H01Q9/0442

摘要： Provided herein is a patch antenna including a multilayered substrate on which a plurality of dielectric layers are laminated; at least one metal pattern layer disposed between the plurality of dielectric layers outside a central area of the multilayered substrate; an antenna patch disposed on an upper surface of the multilayered substrate and within the central area; a ground layer disposed on a lower surface of the multilayered substrate; a plurality of connection via patterns penetrating the plurality of dielectric layers to connect the metal pattern layer and the ground layer, and surrounding the central area; a transmission line comprising a first transmission line unit disposed on the upper surface of the multilayered substrate and located outside the central area, and a second transmission line unit disposed on the upper surface of the multilayered substrate and located within the central area; and an impedance transformer located below the second transmission line unit within the central area of the multilayered substrate.

公开(公告)号：US08937002B2

公开(公告)日：2015-01-20

申请号：US14230031

申请日：2014-03-31

申请人： Electronics and Telecommunications Research Institute

发明人： Sung Bum Bae ,  Eun Soo Nam ,  Jae Kyoung Mun ,  Sung Bock Kim ,  Hae Cheon Kim ,  Chull Won Ju ,  Sang Choon Ko ,  Jong-Won Lim ,  Ho Kyun Ahn ,  Woo Jin Chang ,  Young Rak Park

IPC分类号： H01L21/20 ,  H01L29/66 ,  H01L21/8252 ,  H01L27/06 ,  H01L27/088 ,  H01L21/02

CPC分类号： H01L29/66446 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02647 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0883

摘要： The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.

摘要翻译： 本发明涉及一种氮化物电子器件及其制造方法，特别涉及一种氮化物电子器件及其制造方法，该氮化物电子器件及其制造方法可通过再生技术在同一衬底上实现各种氮化物一体化结构（ 用于包括III族元素如镓（Ga），铝（Al）和铟（In））和氮（III）的III族氮化物半导体电子器件中的半绝缘氮化镓（GaN）层的外延横向过度生长：ELOG） 。

公开(公告)号：US08697491B2

公开(公告)日：2014-04-15

申请号：US13653068

申请日：2012-10-16

申请人： Electronics and Telecommunications Research Institute

发明人： Woojin Chang ,  Soon Il Yeo ,  Hae Cheon Kim ,  Eun Soo Nam

IPC分类号： H01L23/053 ,  H01L21/44

CPC分类号： H01L23/5389 ,  H01L23/3107 ,  H01L24/83 ,  H01L24/90 ,  H01L25/03 ,  H01L2224/90 ,  H01L2924/00011 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2224/83851 ,  H01L2924/00

摘要： A semiconductor package is provided. The semiconductor package includes a package body, a plurality of semiconductor chips, and an external connection terminal. The package body is stacked with a plurality of sheets where conductive patterns and vias are disposed. The plurality of semiconductor chips are inserted into insert slots extending from one surface of the package body. The external connection terminal is provided on other surface opposite to the one surface of the package body. Here, the plurality of semiconductor chips are electrically connected to the external connection terminal.

摘要翻译： 提供半导体封装。 半导体封装包括封装体，多个半导体芯片和外部连接端子。 封装体与设置有导电图案和通孔的多个片层叠。 多个半导体芯片被插入到从封装主体的一个表面延伸的插入槽中。 外部连接端子设置在与封装主体的一个表面相对的另一表面上。 这里，多个半导体芯片电连接到外部连接端子。

公开(公告)号：US12131978B2

公开(公告)日：2024-10-29

申请号：US17562587

申请日：2021-12-27

申请人： Electronics and Telecommunications Research Institute

发明人： Il Gyu Choi ,  Seong Il Kim ,  Hae Cheon Kim ,  Youn Sub Noh ,  Ho Kyun Ahn ,  Sang Heung Lee ,  Jong Won Lim ,  Sung Jae Chang ,  Hyun Wook Jung

IPC分类号： H01L23/373 ,  H01L33/64

CPC分类号： H01L23/3738 ,  H01L23/3731

摘要： The present invention improves a heat dissipation property of a semiconductor device by transferring hexagonal boron nitride (hBN) with a two-dimensional nanostructure to the semiconductor device. A semiconductor device of the present invention includes a substrate having a first surface and a second surface, a semiconductor layer formed on the first surface of the substrate, an hBN layer formed on at least one surface of the first surface and the second surface of the substrate, and a heat sink positioned on the second surface of the substrate. A radiation rate of heat generated during driving of an element is increased to decrease a reduction in lifetime of a semiconductor device due to a temperature increase. The semiconductor device has a structure and configuration which are very effective in improving a rapid temperature increase due to heat generated by high-power semiconductor devices.

公开(公告)号：US09780176B2

公开(公告)日：2017-10-03

申请号：US15238492

申请日：2016-08-16

申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

发明人： Jong Min Lee ,  Byoung-Gue Min ,  Hyung Sup Yoon ,  Dong Min Kang ,  Dong-Young Kim ,  Seong-Il Kim ,  Hae Cheon Kim ,  Jae Won Do ,  Ho Kyun Ahn ,  Sang-Heung Lee ,  Jong-Won Lim ,  Hyun Wook Jung ,  Kyu Jun Cho ,  Chull Won Ju

IPC分类号： H01L29/40 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778 ,  H01L29/66

CPC分类号： H01L29/408 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7787

摘要： The present invention relates to a high reliability field effect power device and a manufacturing method thereof. A method of manufacturing a field effect power device includes sequentially forming a transfer layer, a buffer layer, a barrier layer and a passivation layer on a substrate, patterning the passivation layer by etching a first region of the passivation layer, and forming at least one electrode on the first region of the barrier layer exposed by patterning the passivation layer, wherein the first region is provided to form the at least one electrode, and the passivation layer may include a material having a wider bandgap than the barrier layer to prevent a trapping effect and a leakage current of the field effect power device.

公开(公告)号：US09165896B2

公开(公告)日：2015-10-20

申请号：US14453969

申请日：2014-08-07

申请人： Electronics and Telecommunications Research Institute

发明人： Hae Cheon Kim ,  Ho Kyun Ahn ,  Byoung Gue Min ,  Hyung Sup Yoon ,  Jong Won Lim

IPC分类号： H01L33/00 ,  H01L23/00

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/48 ,  H01L2224/0225 ,  H01L2224/03466 ,  H01L2224/03848 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05644 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/10158 ,  H01L2924/1033 ,  H01L2924/1304 ,  H01L2924/13091 ,  H01L2924/1423 ,  H01L2924/201 ,  H01L2924/37001 ,  H01L2224/45099

摘要： The present invention relates to a GaN transistor, and a method of fabricating the same, in which a structure of a bonding pad is improved by forming an ohmic metal layer at edges of the bonding pad of a source, a drain, and a gate so as to be appropriate to wire-bonding or a back-side via-hole forming process. Accordingly, adhesive force between a metal layer of the bonding pad and a GaN substrate is enhanced by forming the ohmic metal at the edges of the bonding pad during manufacturing of the GaN transistor, thereby minimizing a separation phenomenon of a pad layer during the wire-bonding or back-side via-hole forming process, and improving reliability of a device.

摘要翻译： 本发明涉及一种GaN晶体管及其制造方法，其中通过在源极，漏极和栅极的焊盘的边缘处形成欧姆金属层来改善焊盘的结构，因此 适于引线接合或背面通孔形成工艺。 因此，通过在制造GaN晶体管期间在焊盘的边缘处形成欧姆金属，可以增强焊盘的金属层与GaN基板之间的粘合力， 接合或背面通孔形成工艺，并提高器件的可靠性。

公开(公告)号：US08952422B2

公开(公告)日：2015-02-10

申请号：US13912350

申请日：2013-06-07

申请人： Electronics and Telecommunications Research Institute

发明人： Hokyun Ahn ,  Jong-Won Lim ,  Jeong-Jin Kim ,  Hae Cheon Kim ,  Jae Kyoung Mun ,  Eun Soo Nam

IPC分类号： H01L29/66 ,  H01L29/423 ,  H01L29/778 ,  H01L29/20

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/51 ,  H01L29/518 ,  H01L29/66462 ,  H01L29/7786

摘要： A field effect transistor includes an active layer and a capping layer sequentially stacked on a substrate, and a gate electrode penetrating the capping layer and being adjacent to the active layer. The gate electrode includes a foot portion adjacent to the active layer and a head portion having a width greater than a width of the foot portion. The foot portion of an end part of the gate electrode has a width less than a width of the head portion of another part of the gate electrode and greater than a width of the foot portion of the another part of the gate electrode. The foot portion of the end part of the gate electrode further penetrates the active layer so as to be adjacent to the substrate.

摘要翻译： 场效应晶体管包括依次层叠在基板上的有源层和覆盖层，以及贯穿封盖层并与活性层相邻的栅电极。 栅电极包括与有源层相邻的脚部和具有大于脚部的宽度的宽度的头部。 栅电极的端部的脚部的宽度小于栅电极的另一部分的头部的宽度，并且大于栅极的另一部分的脚部的宽度。 栅电极的端部的脚部进一步穿过有源层，以与衬底相邻。

公开(公告)号：US20140167111A1

公开(公告)日：2014-06-19

申请号：US13912350

申请日：2013-06-07

申请人： Electronics and Telecommunications Research Institute

发明人： Hokyun AHN ,  Jong-Won Lim ,  Jeong-Jin Kim ,  Hae Cheon Kim ,  Jae Kyoung Mun ,  Eun Soo Nam

IPC分类号： H01L29/778 ,  H01L29/66

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/51 ,  H01L29/518 ,  H01L29/66462 ,  H01L29/7786

摘要： A field effect transistor includes an active layer and a capping layer sequentially stacked on a substrate, and a gate electrode penetrating the capping layer and being adjacent to the active layer. The gate electrode includes a foot portion adjacent to the active layer and a head portion having a width greater than a width of the foot portion. The foot portion of an end part of the gate electrode has a width less than a width of the head portion of another part of the gate electrode and greater than a width of the foot portion of the another part of the gate electrode. The foot portion of the end part of the gate electrode further penetrates the active layer so as to be adjacent to the substrate.

摘要翻译： 场效应晶体管包括依次层叠在基板上的有源层和覆盖层，以及贯穿封盖层并与活性层相邻的栅电极。 栅电极包括与有源层相邻的脚部和具有大于脚部的宽度的宽度的头部。 栅电极的端部的脚部的宽度小于栅电极的另一部分的头部的宽度，并且大于栅极的另一部分的脚部的宽度。 栅电极的端部的脚部进一步穿过有源层，以与衬底相邻。