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1.发明授权Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species 有权使用激发氮氧物质的金属氧化物薄膜沉积的系统和方法公开(公告)号：US08877655B2
公开(公告)日：2014-11-04
申请号：US13102980
申请日：2011-05-06
IPC分类号： H01L21/31 , H01L21/469 , H01L21/00 , C23C16/40 , C23C16/30 , H01L21/02 , H01L29/51 , C23C16/455 , H01L21/28 , H01L29/78
CPC分类号： H01L21/0228 , C23C16/30 , C23C16/308 , C23C16/40 , C23C16/401 , C23C16/405 , C23C16/45531 , C23C16/45542 , C23C16/45553 , H01L21/02181 , H01L21/02183 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/28202 , H01L29/518 , H01L29/78
摘要： The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).
摘要翻译： 本发明涉及将薄膜沉积到基底上的方法和系统。 本发明的一个方面是使用原子层沉积（ALD）沉积薄膜金属氧化物层。
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2.发明申请SYSTEMS AND METHODS FOR THIN-FILM DEPOSITION OF METAL OXIDES USING EXCITED NITROGEN-OXYGEN SPECIES 有权使用激素氮氧化物种金属氧化物薄膜沉积的系统和方法公开(公告)号：US20110275166A1
公开(公告)日：2011-11-10
申请号：US13102980
申请日：2011-05-06
CPC分类号： H01L21/0228 , C23C16/30 , C23C16/308 , C23C16/40 , C23C16/401 , C23C16/405 , C23C16/45531 , C23C16/45542 , C23C16/45553 , H01L21/02181 , H01L21/02183 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/28202 , H01L29/518 , H01L29/78
摘要： The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).
摘要翻译： 本发明涉及将薄膜沉积到基底上的方法和系统。 本发明的一个方面是使用原子层沉积（ALD）沉积薄膜金属氧化物层。
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3.发明授权Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species 有权使用激发氮氧物质的金属氧化物薄膜沉积的系统和方法公开(公告)号：US08883270B2
公开(公告)日：2014-11-11
申请号：US12854818
申请日：2010-08-11
申请人： Eric Shero , Petri I. Raisanen , Sung Hoon Jung , Chang-Gong Wang
发明人： Eric Shero , Petri I. Raisanen , Sung Hoon Jung , Chang-Gong Wang
IPC分类号： H05H1/24 , C23C16/40 , C01B13/11 , C23C16/455 , C23C16/52
CPC分类号： C23C16/40 , C01B13/11 , C01B2201/64 , C23C16/45553 , C23C16/52
摘要： Systems and methods are delineated which, among other things, are for depositing a film on a substrate that is within a reaction chamber. In an exemplary method, the method may comprise applying an atomic layer deposition cycle to the substrate, wherein the cycle may comprise exposing the substrate to a precursor gas for a precursor pulse interval and then removing the precursor gas thereafter, and exposing the substrate to an oxidizer comprising an oxidant gas and a nitrogen-containing species gas for an oxidation pulse interval and then removing the oxidizer thereafter. Aspects of the present invention utilize molecular and excited nitrogen-oxygen radical/ionic species in possible further combination with oxidizers such as ozone. Embodiments of the present invention also include electronic components and systems that include devices fabricated with methods consistent with the present invention.
摘要翻译： 描述了系统和方法，其中除了别的以外是将膜沉积在反应室内的基底上。 在示例性方法中，该方法可以包括将原子层沉积循环应用于衬底，其中该循环可以包括将衬底暴露于用于前体脉冲间隔的前体气体，然后在此之后除去前体气体，并将衬底暴露于 氧化剂，其包含氧化剂气体和用于氧化脉冲间隔的含氮物质气体，然后除去氧化剂。 本发明的方面利用分子激发的氮氧自由基/离子物质可能与氧化剂如臭氧进一步组合。 本发明的实施例还包括电子部件和系统，其包括用与本发明一致的方法制造的装置。
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4.发明申请SYSTEMS AND METHODS FOR THIN-FILM DEPOSITION OF METAL OXIDES USING EXCITED NITROGEN-OXYGEN SPECIES 有权使用激素氮氧化物种金属氧化物薄膜沉积的系统和方法公开(公告)号：US20110070380A1
公开(公告)日：2011-03-24
申请号：US12854818
申请日：2010-08-11
申请人： Eric Shero , Petri I. Raisanen , Sung Hoon Jung , Chang-Gong Wang
发明人： Eric Shero , Petri I. Raisanen , Sung Hoon Jung , Chang-Gong Wang
CPC分类号： C23C16/40 , C01B13/11 , C01B2201/64 , C23C16/45553 , C23C16/52
摘要： Systems and methods are delineated which, among other things, are for depositing a film on a substrate that is within a reaction chamber. In an exemplary method, the method may comprise applying an atomic layer deposition cycle to the substrate, wherein the cycle may comprise exposing the substrate to a precursor gas for a precursor pulse interval and then removing the precursor gas thereafter, and exposing the substrate to an oxidizer comprising an oxidant gas and a nitrogen-containing species gas for an oxidation pulse interval and then removing the oxidizer thereafter. Aspects of the present invention utilize molecular and excited nitrogen-oxygen radical/ionic species in possible further combination with oxidizers such as ozone. Embodiments of the present invention also include electronic components and systems that include devices fabricated with methods consistent with the present invention.
摘要翻译： 描述了系统和方法，其中除了别的以外是将膜沉积在反应室内的基底上。 在示例性方法中，该方法可以包括将原子层沉积循环应用于衬底，其中该循环可以包括将衬底暴露于用于前体脉冲间隔的前体气体，然后在此之后除去前体气体，并将衬底暴露于 氧化剂，其包含氧化剂气体和用于氧化脉冲间隔的含氮物质气体，然后除去氧化剂。 本发明的方面利用分子激发的氮氧自由基/离子物质可能与氧化剂如臭氧进一步组合。 本发明的实施例还包括电子部件和系统，其包括用与本发明一致的方法制造的装置。
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公开(公告)号：US08071452B2
公开(公告)日：2011-12-06
申请号：US12430751
申请日：2009-04-27
申请人： Petri I. Raisanen
发明人： Petri I. Raisanen
IPC分类号： H01L21/336
CPC分类号： H01L29/513 , H01L21/02181 , H01L21/02192 , H01L21/02194 , H01L21/0228 , H01L21/28194 , H01L21/28273 , H01L21/3141 , H01L21/31604 , H01L29/517 , H01L29/7881
摘要： There is provided an improved method for depositing thin films using precursors to deposit binary oxides by atomic layer deposition (ALD) techniques. Also disclosed is an ALD method for depositing a high-k dielectric such as hafnium lanthanum oxide (HfLaO) on a substrate. Embodiments of the present invention utilize a combination of ALD precursor elements and cycles to deposit a film with desired physical and electrical characteristics. Electronic components and systems that integrate devices fabricated with methods consistent with the present invention are also disclosed.
摘要翻译： 提供了一种用于通过原子层沉积（ALD）技术沉积二元氧化物的前体沉积薄膜的改进方法。 还公开了一种用于在衬底上沉积诸如铪氧化镧（HfLaO）的高k电介质的ALD方法。 本发明的实施例利用ALD前体元件和循环的组合来沉积具有期望的物理和电学特性的膜。 还公开了集成利用与本发明一致的方法制造的器件的电子部件和系统。
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公开(公告)号：US20100270626A1
公开(公告)日：2010-10-28
申请号：US12430751
申请日：2009-04-27
申请人： Petri I. Raisanen
发明人： Petri I. Raisanen
IPC分类号： H01L29/78 , H01L21/316 , H01L29/92
CPC分类号： H01L29/513 , H01L21/02181 , H01L21/02192 , H01L21/02194 , H01L21/0228 , H01L21/28194 , H01L21/28273 , H01L21/3141 , H01L21/31604 , H01L29/517 , H01L29/7881
摘要： There is provided an improved method for depositing thin films using precursors to deposit binary oxides by atomic layer deposition (ALD) techniques. Also disclosed is an ALD method for depositing a high-k dielectric such as hafnium lanthanum oxide (HfLaO) on a substrate. Embodiments of the present invention utilize a combination of ALD precursor elements and cycles to deposit a film with desired physical and electrical characteristics. Electronic components and systems that integrate devices fabricated with methods consistent with the present invention are also disclosed.
摘要翻译： 提供了一种用于通过原子层沉积（ALD）技术沉积二元氧化物的前体沉积薄膜的改进方法。 还公开了一种用于在衬底上沉积诸如铪氧化镧（HfLaO）的高k电介质的ALD方法。 本发明的实施例利用ALD前体元件和循环的组合来沉积具有期望的物理和电学特性的膜。 还公开了集成利用与本发明一致的方法制造的器件的电子部件和系统。
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