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公开(公告)号：US20060174818A1
公开(公告)日：2006-08-10
申请号：US11371442
申请日：2006-03-09
CPC分类号： C30B29/52 , C23C16/029 , C23C16/22 , C23C16/4401 , C30B25/02 , H01L21/0245 , H01L21/0251 , H01L21/02532 , H01L21/0262
摘要： A method for minimizing particle generation during deposition of a graded Si1-xGex layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, and depositing the graded Si1-xGex layer having a final Ge content of greater than about 0.15 and a particle density of less than about 0.3 particles/cm2 on the substrate.
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2.发明申请Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planes 有权通过使用分裂面形成绝缘体上半导体器件结构的方法公开(公告)号：US20050212061A1
公开(公告)日：2005-09-29
申请号：US11127508
申请日：2005-05-12
IPC分类号： H01L21/20 , H01L21/331 , H01L21/336 , H01L21/337 , H01L21/762 , H01L21/84 , H01L27/12 , H01L29/786 , H01L29/76
CPC分类号： H01L29/7847 , H01L21/28518 , H01L21/76254 , H01L21/76256 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/1033 , H01L29/165 , H01L29/41783 , H01L29/66242 , H01L29/66628 , H01L29/66772 , H01L29/66787 , H01L29/66916 , H01L29/7842 , H01L29/7843 , H01L29/7849 , H01L29/785 , H01L29/78603 , H01L29/78684 , H01L29/78687
摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。
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3.发明申请Methods for forming double gate strained-semiconductor-on-insulator device structures 审中-公开用于形成双栅应变半导体绝缘体上器件结构的方法公开(公告)号：US20060197125A1
公开(公告)日：2006-09-07
申请号：US11415784
申请日：2006-05-02
申请人： Thomas Langdo , Matthew Currie , Glyn Braithwaite , Richard Hammond , Anthony Lochtefeld , Eugene Fitzgerald
发明人： Thomas Langdo , Matthew Currie , Glyn Braithwaite , Richard Hammond , Anthony Lochtefeld , Eugene Fitzgerald
IPC分类号： H01L21/8234 , H01L29/76 , H01L31/00
CPC分类号： H01L29/785 , H01L21/76254 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/66772 , H01L29/66795 , H01L29/66916 , H01L29/7842 , H01L29/78603 , H01L29/78684 , H01L29/78687
摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。
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公开(公告)号：US20060197124A1
公开(公告)日：2006-09-07
申请号：US11415706
申请日：2006-05-01
申请人： Anthony Lochtefeld , Thomas Langdo , Richard Hammond , Matthew Currie , Glyn Braithwaite , Eugene Fitzgerald
发明人： Anthony Lochtefeld , Thomas Langdo , Richard Hammond , Matthew Currie , Glyn Braithwaite , Eugene Fitzgerald
IPC分类号： H01L21/8234 , H01L29/76 , H01L31/00
CPC分类号： H01L29/785 , H01L21/76254 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/66772 , H01L29/66795 , H01L29/66916 , H01L29/7842 , H01L29/78603 , H01L29/78684 , H01L29/78687
摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。
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公开(公告)号：US20050280103A1
公开(公告)日：2005-12-22
申请号：US11211933
申请日：2005-08-25
申请人： Thomas Langdo , Matthew Currie , Glyn Braithwaite , Richard Hammond , Anthony Lochtefeld , Eugene Fitzgerald
发明人： Thomas Langdo , Matthew Currie , Glyn Braithwaite , Richard Hammond , Anthony Lochtefeld , Eugene Fitzgerald
IPC分类号： H01L21/336 , H01L21/337 , H01L21/762 , H01L21/84 , H01L27/12 , H01L29/786 , H01L29/76
CPC分类号： H01L29/785 , H01L21/76254 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/66772 , H01L29/66795 , H01L29/66916 , H01L29/7842 , H01L29/78603 , H01L29/78684 , H01L29/78687
摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。
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6.发明申请Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strain 有权通过机械诱导应变形成绝缘体上半导体器件结构的方法公开(公告)号：US20050199954A1
公开(公告)日：2005-09-15
申请号：US11128628
申请日：2005-05-13
IPC分类号： H01L21/20 , H01L21/331 , H01L21/336 , H01L21/337 , H01L21/762 , H01L21/84 , H01L27/12 , H01L29/786 , H01L27/01 , H01L21/425
CPC分类号： H01L29/7847 , H01L21/28518 , H01L21/76254 , H01L21/76256 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/1033 , H01L29/165 , H01L29/41783 , H01L29/66242 , H01L29/66628 , H01L29/66772 , H01L29/66787 , H01L29/66916 , H01L29/7842 , H01L29/7843 , H01L29/7849 , H01L29/785 , H01L29/78603 , H01L29/78684 , H01L29/78687
摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。
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7.发明申请Methods for forming structures including strained-semiconductor-on-insulator devices 审中-公开用于形成包括应变绝缘体上半导体器件的结构的方法公开(公告)号：US20060197126A1
公开(公告)日：2006-09-07
申请号：US11416423
申请日：2006-05-02
申请人： Anthony Lochtefeld , Thomas Langdo , Richard Hammond , Matthew Currie , Glyn Braithwaite , Eugene Fitzgerald
发明人： Anthony Lochtefeld , Thomas Langdo , Richard Hammond , Matthew Currie , Glyn Braithwaite , Eugene Fitzgerald
IPC分类号： H01L21/8234 , H01L29/76 , H01L31/00
CPC分类号： H01L29/785 , H01L21/76254 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/66772 , H01L29/66795 , H01L29/66916 , H01L29/7842 , H01L29/78603 , H01L29/78684 , H01L29/78687
摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。
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8.发明申请Strained-semiconductor-on-insulator device structures with elevated source/drain regions 有权具有升高的源极/漏极区域的应变半导体绝缘体上器件结构公开(公告)号：US20050218453A1
公开(公告)日：2005-10-06
申请号：US11125507
申请日：2005-05-10
IPC分类号： H01L21/20 , H01L21/331 , H01L21/336 , H01L21/337 , H01L21/762 , H01L21/84 , H01L27/12 , H01L29/786 , H01L27/01
CPC分类号： H01L29/7847 , H01L21/28518 , H01L21/76254 , H01L21/76256 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/1033 , H01L29/165 , H01L29/41783 , H01L29/66242 , H01L29/66628 , H01L29/66772 , H01L29/66787 , H01L29/66916 , H01L29/7842 , H01L29/7843 , H01L29/7849 , H01L29/785 , H01L29/78603 , H01L29/78684 , H01L29/78687
摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。
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公开(公告)号：US20050189563A1
公开(公告)日：2005-09-01
申请号：US11120675
申请日：2005-05-03
IPC分类号： H01L21/20 , H01L21/331 , H01L21/336 , H01L21/337 , H01L21/762 , H01L21/84 , H01L27/12 , H01L29/786 , H01L31/072
CPC分类号： H01L29/7847 , H01L21/28518 , H01L21/76254 , H01L21/76256 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/1033 , H01L29/165 , H01L29/41783 , H01L29/66242 , H01L29/66628 , H01L29/66772 , H01L29/66787 , H01L29/66916 , H01L29/7842 , H01L29/7843 , H01L29/7849 , H01L29/785 , H01L29/78603 , H01L29/78684 , H01L29/78687
摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。
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10.发明申请公开(公告)号：US20050156246A1
公开(公告)日：2005-07-21
申请号：US11073780
申请日：2005-03-07
IPC分类号： H01L21/20 , H01L21/336 , H01L21/337 , H01L21/762 , H01L21/84 , H01L27/12 , H01L29/786 , H01L31/0392
CPC分类号： H01L21/76254 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02505 , H01L21/0251 , H01L21/02521 , H01L21/02532 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/66772 , H01L29/66916 , H01L29/7842 , H01L29/78603 , H01L29/78684 , H01L29/78687
摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
摘要翻译： 应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。
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