利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

71 条记录 (耗时 0.023 秒)

    Nonvolatile memory devices and methods of operating nonvolatile memory devices
    1.
    发明授权
    Nonvolatile memory devices and methods of operating nonvolatile memory devices 有权
    非易失性存储器件和操作非易失性存储器件的方法

    公开(公告)号：US08730738B2

    公开(公告)日：2014-05-20

    申请号：US13211743

    申请日：2011-08-17

    申请人： Eun Chu Oh ,  Hong Rak Son ,  KyoungLae Cho ,  Junjin Kong

    发明人： Eun Chu Oh ,  Hong Rak Son ,  KyoungLae Cho ,  Junjin Kong

    IPC分类号： G11C11/34 ,  G11C16/06

    CPC分类号： G11C16/10 ,  G11C16/0483 ,  G11C16/3454

    摘要： Methods of operating nonvolatile memory devices including a plurality of cell strings each having at least one ground selection transistor, a plurality of memory cells, and at least one string selection transistor, the operating methods including receiving a command and an address, determining a voltage applying time in response to the input command and address, and applying a specific voltage to memory cells of cell strings corresponding to the input address during the determined voltage applying time.

    摘要翻译： 操作包括多个单元串的非易失性存储器件的方法，每个单元串具有至少一个接地选择晶体管，多个存储单元和至少一个串选择晶体管，所述操作方法包括接收命令和地址，确定施加的电压 响应于输入命令和地址的时间，以及在确定的电压施加时间期间，将特定电压施加到对应于输入地址的单元串的存储单元。

    NONVOLATILE MEMORY DEVICES AND METHODS OF OPERATING NONVOLATILE MEMORY DEVICES
    2.
    发明申请
    NONVOLATILE MEMORY DEVICES AND METHODS OF OPERATING NONVOLATILE MEMORY DEVICES 有权
    非易失性存储器件和操作非易失性存储器件的方法

    公开(公告)号：US20120257455A1

    公开(公告)日：2012-10-11

    申请号：US13211743

    申请日：2011-08-17

    申请人： Eun Chu Oh ,  Hong Rak Son ,  KyoungLae Cho ,  Junjin Kong

    发明人： Eun Chu Oh ,  Hong Rak Son ,  KyoungLae Cho ,  Junjin Kong

    IPC分类号： G11C16/10

    CPC分类号： G11C16/10 ,  G11C16/0483 ,  G11C16/3454

    摘要： Methods of operating nonvolatile memory devices including a plurality of cell strings each having at least one ground selection transistor, a plurality of memory cells, and at least one string selection transistor, the operating methods including receiving a command and an address, determining a voltage applying time in response to the input command and address, and applying a specific voltage to memory cells of cell strings corresponding to the input address during the determined voltage applying time.

    摘要翻译： 操作包括多个单元串的非易失性存储器件的方法，每个单元串具有至少一个接地选择晶体管，多个存储单元和至少一个串选择晶体管，所述操作方法包括接收命令和地址，确定施加的电压 响应于输入命令和地址的时间，以及在确定的电压施加时间期间，将特定电压施加到对应于输入地址的单元串的存储单元。

    Method of operating a memory system having an erase control unit
    3.
    发明授权
    Method of operating a memory system having an erase control unit 有权
    一种具有擦除控制单元的存储系统的操作方法

    公开(公告)号：US09437310B2

    公开(公告)日：2016-09-06

    申请号：US14827930

    申请日：2015-08-17

    申请人： Eun Chu Oh ,  Hong Rak Son ,  Junjin Kong

    发明人： Eun Chu Oh ,  Hong Rak Son ,  Junjin Kong

    IPC分类号： G11C16/10 ,  G11C16/16 ,  G11C11/56 ,  G11C16/34 ,  G11C16/26

    CPC分类号： G11C16/16 ,  G11C11/5635 ,  G11C16/26 ,  G11C16/3468

    摘要： A method of operating a memory system including a nonvolatile memory including a memory block, and a memory controller including an erase control unit, includes performing pre-reading a plurality of memory cells connected to a selected word line of the memory block, generating an off cell count based on the pre-reading result, by operation of the erase control unit, comparing the off cell count with a reference value to generate a comparison result, and changing an erase operation condition based on the comparison result, by operation of the nonvolatile memory, and erasing the memory block according to the changed erase operation condition.

    摘要翻译： 一种操作包括包括存储器块的非易失性存储器的存储器系统的方法和包括擦除控制单元的存储器控​​制器，包括执行预读取连接到所述存储器块的选定字线的多个存储器单元，产生关断 基于预读取结果的单元计数，通过擦除控制单元的操作，将关闭单元计数与参考值进行比较以产生比较结果，以及通过非易失性存储器的操作来改变基于比较结果的擦除操作条件 存储器，并根据改变的擦除操作条件擦除存储器块。

    STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE AND GARBAGE COLLECTION METHOD THEREOF
    7.
    发明申请
    STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE AND GARBAGE COLLECTION METHOD THEREOF 审中-公开
    包含非易失性存储器件的存储器件及其收集方法

    公开(公告)号：US20160267004A1

    公开(公告)日：2016-09-15

    申请号：US15064185

    申请日：2016-03-08

    申请人： AMITAI PERLSTEIN ,  Eun Chu Oh ,  Amir Bennatan ,  Junjin Kong ,  Hong Rak Son

    发明人： AMITAI PERLSTEIN ,  Eun Chu Oh ,  Amir Bennatan ,  Junjin Kong ,  Hong Rak Son

    IPC分类号： G06F12/02

    CPC分类号： G06F12/0246 ,  G06F12/0253 ,  G06F2212/7205

    摘要： A storage device is provided as follows. A nonvolatile memory device includes blocks, each block having sub-blocks erased independently. A memory controller performs a garbage collection operation on the nonvolatile memory device by selecting a garbage collection victim sub-block among the sub-blocks and erasing the selected garbage collection victim sub-block to generate a free sub-block. The memory controller selects the garbage collection victim sub-block using valid page information of each sub-block and valid page information of memory cells adjacent to each sub-block.

    摘要翻译： 存储装置如下提供。 非易失性存储器件包括块，每个块具有独立擦除的子块。 存储器控制器通过选择子块中的垃圾收集受害者子块并擦除所选择的垃圾收集受害者子块以产生空闲子块来对非易失性存储器件执行垃圾回收操作。 存储器控制器使用每个子块的有效页面信息和与每个子块相邻的存储器单元的有效页面信息来选择垃圾回收受害者子块。

    METHOD OF OPERATING A MEMORY SYSTEM HAVING AN ERASE CONTROL UNIT
    8.
    发明申请
    METHOD OF OPERATING A MEMORY SYSTEM HAVING AN ERASE CONTROL UNIT 有权
    操作具有擦除控制单元的存储器系统的方法

    公开(公告)号：US20160093387A1

    公开(公告)日：2016-03-31

    申请号：US14827930

    申请日：2015-08-17

    申请人： Eun Chu Oh ,  Hong Rak Son ,  Junjin Kong

    发明人： Eun Chu Oh ,  Hong Rak Son ,  Junjin Kong

    IPC分类号： G11C16/16 ,  G11C16/34 ,  G11C16/26

    CPC分类号： G11C16/16 ,  G11C11/5635 ,  G11C16/26 ,  G11C16/3468

    摘要： A method of operating a memory system including a nonvolatile memory including a memory block, and a memory controller including an erase control unit, includes performing pre-reading a plurality of memory cells connected to a selected word line of the memory block, generating an off cell count based on the pre-reading result, by operation of the erase control unit, comparing the off cell count with a reference value to generate a comparison result, and changing an erase operation condition based on the comparison result, by operation of the nonvolatile memory, and erasing the memory block according to the changed erase operation condition.

    摘要翻译： 一种操作包括包括存储器块的非易失性存储器的存储器系统的方法和包括擦除控制单元的存储器控​​制器，包括执行预读取连接到所述存储器块的选定字线的多个存储器单元，产生关断 基于预读取结果的单元计数，通过擦除控制单元的操作，将关闭单元计数与参考值进行比较以产生比较结果，以及通过非易失性存储器的操作来改变基于比较结果的擦除操作条件 存储器，并根据改变的擦除操作条件擦除存储器块。