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公开(公告)号：US20110027128A1
公开(公告)日：2011-02-03
申请号：US12934827
申请日：2009-03-19
CPC分类号： G01N33/5438 , G01N27/226
摘要： A sensor chip (100) for detecting particles, the sensor chip (100) comprising a substrate (102), an electric connection structure (104) arranged in a surface portion of the substrate (102) and adapted for an electric connection to an electric connection element (106), a sensor active region (108) arranged in another surface portion of the substrate (102) and being sensitive to the presence of the particles to be detected, and a continuous dielectric layer (110) covering the substrate (102) including covering the electric connection structure (104) and the sensor active region (108).
摘要翻译： 一种用于检测颗粒的传感器芯片（100），所述传感器芯片（100）包括基板（102），电连接结构（104），布置在所述基板（102）的表面部分中，并且适于电连接到电 连接元件（106），布置在所述基板（102）的另一表面部分中并且对待检测的颗粒的存在敏感的传感器有源区域（108）以及覆盖所述基板（102）的连续介电层（110） ）包括覆盖电连接结构（104）和传感器有源区（108）。
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公开(公告)号：US08821794B2
公开(公告)日：2014-09-02
申请号：US12934827
申请日：2009-03-19
IPC分类号： G01N27/00 , G01N33/543 , G01N27/22
CPC分类号： G01N33/5438 , G01N27/226
摘要： A sensor chip (100) for detecting particles, the sensor chip (100) comprising a substrate (102), an electric connection structure (104) arranged in a surface portion of the substrate (102) and adapted for an electric connection to an electric connection element (106), a sensor active region (108) arranged in another surface portion of the substrate (102) and being sensitive to the presence of the particles to be detected, and a continuous dielectric layer (110) covering the substrate (102) including covering the electric connection structure (104) and the sensor active region (108).
摘要翻译： 一种用于检测颗粒的传感器芯片（100），所述传感器芯片（100）包括基板（102），电连接结构（104），布置在所述基板（102）的表面部分中，并且适于电连接到电 连接元件（106），布置在所述基板（102）的另一表面部分中并且对待检测的颗粒的存在敏感的传感器有源区域（108）以及覆盖所述基板（102）的连续介电层（110） ）包括覆盖电连接结构（104）和传感器有源区（108）。
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公开(公告)号：US20100052080A1
公开(公告)日：2010-03-04
申请号：US12595119
申请日：2008-04-22
IPC分类号： H01L27/06 , H01L21/306
CPC分类号： G01N27/3278 , G01N33/5438 , H01L21/768 , H01L21/76883 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A biosensor chip (100) for detecting biological particles, the biosensor chip (100) comprising a sensor active region (101) being sensitive for the biological particles and being arranged in a Back End of the Line portion (102) of the biosensor chip (100).
摘要翻译： 一种生物传感器芯片（100），用于检测生物颗粒，所述生物传感器芯片（100）包括对生物体微粒敏感的传感器有源区（101），并且被布置在生物传感器芯片的线部分（102）的后端 100）。
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公开(公告)号：US08794054B2
公开(公告)日：2014-08-05
申请号：US13262628
申请日：2010-03-25
IPC分类号： G01N29/036
CPC分类号： G01N33/5438 , B81C1/00087 , G01N33/48721
摘要： A sensor device for analyzing fluidic samples is provided. The sensor device includes a stacked sensing arrangement having at least three sensing layers and a multilayer structure. The multilayer structure has a hole formed therein which is adapted to let pass the fluidic sample and the stacked sensing arrangement is formed in the multilayer structure in such a way that the fluidic sample passes the stacked sensing arrangement when the fluidic sample passes the hole.
摘要翻译： 提供了一种用于分析流体样品的传感器装置。 传感器装置包括具有至少三个感测层和多层结构的层叠感测装置。 多层结构具有形成在其中的孔，其适于使流体样品通过，并且层叠的感测装置形成在多层结构中，使得当流体样品通过孔时流体样品通过堆叠的感测装置。
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公开(公告)号：US20120060589A1
公开(公告)日：2012-03-15
申请号：US13262628
申请日：2010-03-25
CPC分类号： G01N33/5438 , B81C1/00087 , G01N33/48721
摘要： A sensor device for analyzing fluidic samples is provided, wherein the sensor device comprises a stacked sensing arrangement comprising at least three sensing layers and a multilayer structure, wherein the multilayer structure has a hole formed therein which is adapted to let pass the fluidic sample and wherein the stacked sensing arrangement is formed in the multilayer structure in such a way that the fluidic sample passes the stacked sensing arrangement when the fluidic sample passes the hole.
摘要翻译： 提供了一种用于分析流体样品的传感器装置，其中所述传感器装置包括包括至少三个感测层和多层结构的堆叠感测装置，其中所述多层结构具有形成在其中的孔，其适于使所述流体样品通过，并且其中 层叠的感测装置形成在多层结构中，使得当流体样品通过孔时，流体样品通过堆叠的感测装置。
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6.发明授权Heterojunction bipolar transistor manufacturing method and integrated circuit comprising a heterojunction bipolar transistor 有权异质结双极晶体管制造方法和包括异质结双极晶体管的集成电路公开(公告)号：US08872237B2
公开(公告)日：2014-10-28
申请号：US13299755
申请日：2011-11-18
申请人： Tony Vanhoucke , Johannes Josephus Theodorus Marinus Donkers , Hans Mertens , Blandine Duriez , Evelyne Gridelet
发明人： Tony Vanhoucke , Johannes Josephus Theodorus Marinus Donkers , Hans Mertens , Blandine Duriez , Evelyne Gridelet
IPC分类号： H01L29/66 , H01L29/737 , H01L29/08
CPC分类号： H01L29/0821 , H01L29/66242 , H01L29/7378
摘要： Disclosed is a method of manufacturing a heterojunction bipolar transistor comprising a substrate, an upper region of said substrate comprising an active region of the bipolar transistor bordered by shallow trench insulation, said active region comprising a buried collector region extending to a depth beyond the depth of the shallow trench insulation, the method comprising forming a trench in the substrate adjacent to said active region, said trench extending through the shallow trench insulation; at least partially filling said trench with an impurity; and forming a collector sinker in the substrate by developing said impurity to extend into the substrate to a depth beyond the depth of the shallow trench insulation. An IC comprising a heterojunction bipolar transistor manufactured by this method is also disclosed.
摘要翻译： 公开了一种制造包括衬底的异质结双极晶体管的方法，所述衬底的上部区域包括由浅沟槽绝缘体界定的双极晶体管的有源区，所述有源区包括延伸到超过深度 所述浅沟槽绝缘体，所述方法包括在所述衬底中邻近所述有源区形成沟槽，所述沟槽延伸穿过所述浅沟槽绝缘体; 至少部分地用杂质填充所述沟槽; 以及通过使所述杂质显影而在衬底中形成收集器沉降片，以延伸到衬底中深度超过浅沟槽绝缘深度的深度。 还公开了一种包括通过该方法制造的异质结双极晶体管的IC。
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7.发明申请公开(公告)号：US20120132961A1
公开(公告)日：2012-05-31
申请号：US13299755
申请日：2011-11-18
申请人： Tony Vanhoucke , Johannes Josephus Theodorus Marinus Donkers , Hans Mertens , Blandine Duriez , Evelyne Gridelet
发明人： Tony Vanhoucke , Johannes Josephus Theodorus Marinus Donkers , Hans Mertens , Blandine Duriez , Evelyne Gridelet
IPC分类号： H01L29/737 , H01L21/328
CPC分类号： H01L29/0821 , H01L29/66242 , H01L29/7378
摘要： Disclosed is a method of manufacturing a heterojunction bipolar transistor comprising a substrate, an upper region of said substrate comprising an active region of the bipolar transistor bordered by shallow trench insulation, said active region comprising a buried collector region extending to a depth beyond the depth of the shallow trench insulation, the method comprising forming a trench in the substrate adjacent to said active region, said trench extending through the shallow trench insulation; at least partially filling said trench with an impurity; and forming a collector sinker in the substrate by developing said impurity to extend into the substrate to a depth beyond the depth of the shallow trench insulation. An IC comprising a heterojunction bipolar transistor manufactured by this method is also disclosed.
摘要翻译： 公开了一种制造包括衬底的异质结双极晶体管的方法，所述衬底的上部区域包括由浅沟槽绝缘体界定的双极晶体管的有源区，所述有源区包括延伸到超过深度 所述浅沟槽绝缘体，所述方法包括在所述衬底中邻近所述有源区形成沟槽，所述沟槽延伸穿过所述浅沟槽绝缘体; 至少部分地用杂质填充所述沟槽; 以及通过使所述杂质显影而在衬底中形成收集器沉降片，以延伸到衬底中深度超过浅沟槽绝缘深度的深度。 还公开了一种包括通过该方法制造的异质结双极晶体管的IC。
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公开(公告)号：US09206794B2
公开(公告)日：2015-12-08
申请号：US12989012
申请日：2009-04-22
申请人： Evelyne Gridelet
发明人： Evelyne Gridelet
CPC分类号： F04B19/006 , B01L3/50273 , B01L2300/0645 , B01L2400/0421 , B01L2400/0427 , Y10T29/49002
摘要： A microfluidic pump comprises a plurality of metal electrodes (10) which oxidise in air, a liquid droplet (14) to be moved by the pump, which is in contact with a least one metal electrode, and a controller for controlling the oxidation state of the metal electrodes in order to vary the electrode wettability. This arrangement enables full integration with a semiconductor device, and with low drive voltages.
摘要翻译： 微流体泵包括在空气中氧化的多个金属电极（10），与至少一个金属电极接触的由泵移动的液滴（14）和用于控制氧化态的控制器 金属电极为了改变电极的润湿性。 这种布置使得能够与半导体器件完全集成，并且具有低驱动电压。
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公开(公告)号：US20120238473A1
公开(公告)日：2012-09-20
申请号：US13420133
申请日：2012-03-14
申请人： Evelyne Gridelet , Hilco Suy , Filip Frederix
发明人： Evelyne Gridelet , Hilco Suy , Filip Frederix
CPC分类号： G01N33/557 , G01N27/127 , G01N33/5438
摘要： A sensor device is disclosed, which depends on discrimination in time between groups of binding events of target particles to nano-electrodes. The target particles may be in the liquid phase or in suspension. The nano-electrodes form part of a sensor arrangement having a plurality of sensors. The sensor device is arranged such that different species of target particles arrive at the nano-electrodes at different times, using techniques such as chromatography or application of a field such as an electric, magnetic, or gravitational field. The particles may be labelled or unlabeled. The invention is particularly suited, but not limited, to sensing bioparticles.
摘要翻译： 公开了一种传感器装置，其取决于目标颗粒与纳米电极的结合事件组之间的时间差异。 目标颗粒可以是液相或悬浮液。 纳米电极形成具有多个传感器的传感器装置的一部分。 传感器装置布置成使得不同种类的目标颗粒在不同时间到达纳米电极，使用诸如色谱法或诸如电，磁场或重力场的场的应用的技术。 颗粒可以被标记或未标记。 本发明特别适用于但不限于感测生物颗粒。
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10.发明申请PN JUNCTION CHEMICAL SENSOR (originally published as A SENSOR DEVICE AND METHOD OF DETECTING PARTICLES) 有权PN结化学传感器（最初发表为传感器装置和检测颗粒的方法）公开(公告)号：US20110204872A1
公开(公告)日：2011-08-25
申请号：US12922665
申请日：2009-03-09
申请人： Evelyne Gridelet , Almudena Huerta , Pierre Goarin , Jan Sonsky
发明人： Evelyne Gridelet , Almudena Huerta , Pierre Goarin , Jan Sonsky
IPC分类号： G01N27/00 , H01L29/66 , H01L31/118
CPC分类号： H01L29/7391 , G01N27/4145
摘要： A sensor device (100, 2800) for detecting particles, the sensor device (100, 2800) comprising a substrate (102), a first doped region (104) formed in the substrate (102) by a first dopant of a first type of conductivity, a second doped region (106, 150) formed in the substrate (102) by a second dopant of a second type of conductivity which differs from the first type of conductivity, a depletion region (108) at a junction between the first doped region (104) and the second doped region (106, 150), a sensor active region (110) adapted to influence a property of the depletion region (108) in the presence of the particles, and a detection unit (112) adapted to detect the particles based on an electric measurement performed upon application of a predetermined reference voltage between the first doped region (104) and the second doped region (106, 150), the electric measurement being indicative of the presence of the particles in the sensor active region (110).
摘要翻译： 一种用于检测颗粒的传感器装置（100,2800），所述传感器装置（100,2800）包括衬底（102），通过第一类型的第一掺杂剂在衬底（102）中形成的第一掺杂区（104） 通过与第一类型的导电性不同的第二导电类型的第二掺杂剂形成在衬底（102）中的第二掺杂区（106,150），第一掺杂区 区域（104）和第二掺杂区域（106,150），适于在存在颗粒的情况下影响耗尽区（108）的性质的传感器有源区（110），以及适于 基于在第一掺杂区域（104）和第二掺杂区域（106,150）之间施加预定参考电压进行的电测量来检测颗粒，电测量表示传感器中存在颗粒活性 区域（110）。
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