公开(公告)号：US11687001B2

公开(公告)日：2023-06-27

申请号：US16807496

申请日：2020-03-03

Applicant: FUJIFILM Corporation

Inventor： Tsutomu Yoshimura ,  Yasunori Yonekuta ,  Naoya Hatakeyama ,  Kohei Higashi ,  Yoichi Nishida

IPC: G03F7/039 ,  C08F220/18 ,  C08F212/14 ,  C08F212/08 ,  G03F7/004 ,  G03F7/038 ,  C07C381/12

CPC classification number: G03F7/039 ,  C07C381/12 ,  C08F212/08 ,  C08F212/24 ,  C08F212/30 ,  C08F220/1804 ,  C08F220/1809 ,  G03F7/0045 ,  G03F7/038

Abstract: Provided are an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A),



in which the resin (A) includes a repeating unit having an acidic group and a repeating unit having an acid-decomposable group,
a content of the repeating unit having an acidic group is 15% by mole or more with respect to all the repeating units in the resin (A),
a content of the repeating unit having an acid-decomposable group is more than 20% by mole with respect to all the repeating units in the resin (A),
a glass transition temperature of the resin (A) is 145° C. or lower, and
the actinic ray-sensitive or radiation-sensitive resin composition is used for formation of a film having a film thickness of 2 μm or more; and a resist film, a pattern forming method, and a method for manufacturing an electronic device, each using the actinic ray-sensitive or radiation-sensitive resin composition.

公开(公告)号：US11333978B2

公开(公告)日：2022-05-17

申请号：US16730384

申请日：2019-12-30

Applicant: FUJIFILM Corporation

Inventor： Kohei Higashi ,  Hideki Takakuwa

IPC: H01L21/00 ,  G03F7/038 ,  G02B5/20 ,  G03F7/004 ,  G03F7/039 ,  H01L27/146 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition for forming a pattern used as a mask in an ion implanting, including a resin including a repeating unit having an acid-decomposable group, a photoacid generator, and an additive having a melting point or glass transition temperature of lower than 25° C. and a molecular weight of 180 or more, in which a content of the additive is 1% by mass or more with respect to a total solid content in the composition.

公开(公告)号：US20220146937A1

公开(公告)日：2022-05-12

申请号：US17581177

申请日：2022-01-21

Applicant: FUJIFILM Corporation

Inventor： Naoya Hatakeyama ,  Yasunori Yonekuta ,  Takamitsu Tomiga ,  Kohei Higashi ,  Fumihiro Yoshino

IPC: G03F7/039 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/004 ,  G03F7/038 ,  G03F7/38 ,  G03F7/40

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains (A) a resin having a polarity that increases by an action of an acid, (B) a photoacid generator, (P) an amine oxide, and (D) an acid diffusion control agent (provided that acid diffusion control agents corresponding to the amine oxide are excluded), in which a content of the amine oxide (P) is from 0.01 ppm to 1,000 ppm with respect to a total mass of the actinic ray-sensitive or radiation-sensitive resin composition, and a mass ratio of the acid diffusion control agent (D) to the amine oxide (P) is more than 1 and 10,000 or less.

公开(公告)号：US11835849B2

公开(公告)日：2023-12-05

申请号：US18109399

申请日：2023-02-14

Applicant: FUJIFILM Corporation

Inventor： Tsutomu Yoshimura ,  Yasunori Yonekuta ,  Naoya Hatakeyama ,  Kohei Higashi ,  Yoichi Nishida

IPC: G03F7/039 ,  C08F220/18 ,  C08F212/14 ,  C08F212/08 ,  G03F7/004 ,  G03F7/038 ,  C07C381/12

CPC classification number: G03F7/039 ,  C07C381/12 ,  C08F212/08 ,  C08F212/24 ,  C08F212/30 ,  C08F220/1804 ,  C08F220/1809 ,  G03F7/0045 ,  G03F7/038

Abstract: Provided are an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A),



in which the resin (A) includes a repeating unit having an acidic group and a repeating unit having an acid-decomposable group,
a content of the repeating unit having an acidic group is 15% by mole or more with respect to all the repeating units in the resin (A),
a content of the repeating unit having an acid-decomposable group is more than 20% by mole with respect to all the repeating units in the resin (A),
a glass transition temperature of the resin (A) is 145° C. or lower, and
the actinic ray-sensitive or radiation-sensitive resin composition is used for formation of a film having a film thickness of 2 μm or more; and a resist film, a pattern forming method, and a method for manufacturing an electronic device, each using the actinic ray-sensitive or radiation-sensitive resin composition.

公开(公告)号：US11650501B2

公开(公告)日：2023-05-16

申请号：US16807496

申请日：2020-03-03

Applicant: FUJIFILM Corporation

Inventor： Tsutomu Yoshimura ,  Yasunori Yonekuta ,  Naoya Hatakeyama ,  Kohei Higashi ,  Yoichi Nishida

IPC: G03F7/039 ,  C08F220/18 ,  C08F212/14 ,  C08F212/08 ,  G03F7/004 ,  G03F7/038 ,  C07C381/12

CPC classification number: G03F7/039 ,  C07C381/12 ,  C08F212/08 ,  C08F212/24 ,  C08F212/30 ,  C08F220/1804 ,  C08F220/1809 ,  G03F7/0045 ,  G03F7/038

Abstract: Provided are an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A),



in which the resin (A) includes a repeating unit having an acidic group and a repeating unit having an acid-decomposable group,
a content of the repeating unit having an acidic group is 15% by mole or more with respect to all the repeating units in the resin (A),
a content of the repeating unit having an acid-decomposable group is more than 20% by mole with respect to all the repeating units in the resin (A),
a glass transition temperature of the resin (A) is 145° C. or lower, and
the actinic ray-sensitive or radiation-sensitive resin composition is used for formation of a film having a film thickness of 2 μm or more; and a resist film, a pattern forming method, and a method for manufacturing an electronic device, each using the actinic ray-sensitive or radiation-sensitive resin composition.

公开(公告)号：US10465299B2

公开(公告)日：2019-11-05

申请号：US14865334

申请日：2015-09-25

Applicant: FUJIFILM Corporation ,  Japan Technological Research Association of Articifial Photosynthetic Chemical Process

Inventor： Kohei Higashi

IPC: C25B1/02 ,  C25B1/00 ,  C25B11/04 ,  H01L31/05 ,  H01L31/0749 ,  H01L31/046 ,  C25B1/10 ,  H01L31/072

Abstract: A gas production apparatus is provided which includes: a module including a plurality of PN junctions connected in series to one another, each being formed of an inorganic semiconductor and having a light receiving surface; two gas generators that are provided at open ends of PN junctions at both extremities of the module, respectively, on a side of the light receiving surface; an electrolysis chamber which contains an aqueous electrolytic solution in contact with the two gas generators and contains gases generated by the two gas generators; and a diaphragm which is ion-permeable but gas-impermeable, and partitions the electrolysis chamber into two regions including the two gas generators, respectively, and containing hydrogen and oxygen, respectively.

公开(公告)号：US12061415B2

公开(公告)日：2024-08-13

申请号：US17902202

申请日：2022-09-02

Applicant: FUJIFILM Corporation

Inventor： Takumi Tanaka ,  Takashi Bannai ,  Takamitsu Tomiga ,  Kohei Higashi ,  Fumihiro Yoshino ,  Yuma Kurumisawa

IPC: G03F7/00 ,  G03F7/028

CPC classification number: G03F7/0035 ,  G03F7/028

Abstract: A method for producing a composition, the method being for producing a composition using a stirring device provided with a stirring tank and a stirrer, includes a mixing step of charging a resin, an acid generator, and a solvent into the stirring tank, and a stirring step of stirring the mixture accommodated in the stirring tank, using the stirrer, in which a ratio c of a content of the acid generator to a total mass of the mixture is 0.3% to 2.5% by mass, the stirrer is provided with a rotatable stirring shaft, a plurality of support parts attached to the stirring shaft, and a plurality of stirring elements attached to each of end parts of the plurality of support parts, the shape and the arrangement of the stirring elements are specified, and the positions of the plurality of stirring elements are specified so as to satisfy a specific Expression (1).

公开(公告)号：US20230028463A1

公开(公告)日：2023-01-26

申请号：US17902353

申请日：2022-09-02

Applicant: FUJIFILM Corporation

Inventor： Takamitsu Tomiga ,  Kohei Higashi ,  Fumihiro Yoshino ,  Yuma Kurumisawa ,  Takumi Tanaka

IPC: G03F7/004

Abstract: A method for producing an actinic ray-sensitive or radiation-sensitive resin composition, comprising: preparing an intermediate solution which includes a photoacid generator and a solvent; and mixing the intermediate solution with at least a resin to prepare an actinic ray-sensitive or radiation-sensitive resin composition having a viscosity of 10 mPa·s or more.

公开(公告)号：US10452217B2

公开(公告)日：2019-10-22

申请号：US15797885

申请日：2017-10-30

Applicant: FUJIFILM Corporation

Inventor： Kohei Higashi ,  Naoki Tsukamoto ,  Masataka Satou

IPC: G06F3/044 ,  B32B15/08 ,  C23C18/30 ,  C23C18/31 ,  B32B5/02 ,  B32B15/04 ,  H05K1/02 ,  H05K3/18 ,  C23C18/16 ,  C23C18/20 ,  C23C18/38 ,  C23C18/54

Abstract: According to the invention, there are provided a conductive film which has a mesh-like metal layer composed of metal thin wires and in which visual recognition of the metal thin wires is suppressed and the metal layer has excellent conductive characteristics, a touch panel sensor, and a touch panel. A conductive film according to the invention includes a substrate; a patterned to-be-plated layer which is disposed on the substrate in a mesh pattern and has a functional group interacting with a plating catalyst or a precursor thereof; and a mesh-like metal layer which is disposed on the patterned to-be-plated layer and has a plurality of metal thin wires intersecting each other, an average thickness of the patterned to-be-plated layer is 0.05 to 100 μm, an average thickness of the metal layer is 0.05 to 0.5 μm, and an average intersection growing rate at an intersection of metal thin wires of the mesh of the metal layer is 1.6 or less.

公开(公告)号：US10351961B2

公开(公告)日：2019-07-16

申请号：US15392440

申请日：2016-12-28

Applicant: FUJIFILM Corporation ,  Japan Technological Research Association of Artifical Photosynthetic Chemical Process

Inventor： Kohei Higashi ,  Naotoshi Sato

IPC: C25B1/00 ,  C25B9/08 ,  H01L31/04 ,  C25B11/04 ,  H01L31/032 ,  C25B1/10 ,  C25B15/02 ,  C25B9/00 ,  C01B3/04 ,  H01L31/072 ,  H01L31/0749

Abstract: Provided are a water decomposition apparatus and a water decomposition method that can maintain high gas generation efficiency even in an early stage of light irradiation and even in a case where time has elapsed and that can recover the gas generation amount of hydrogen gas or the like, can generate hydrogen gas or the like stably for a long time on an average, and can increase the integrated amount of generation of hydrogen for a long time, even in a case where time has elapsed and the gas generation amount of hydrogen gas or the like has decreased.