公开(公告)号：US20130187271A1

公开(公告)日：2013-07-25

申请号：US13786991

申请日：2013-03-06

申请人： FUJITSU LIMITED ,  FUJITSU TEN LIMITED

发明人： Motoaki TANI ,  Shinya IIJIMA ,  Shinichi SUGIURA ,  Hiromichi WATANABE

IPC分类号： H01L23/498

CPC分类号： H01L23/49811 ,  H01L21/563 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/81 ,  H01L2224/02166 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02331 ,  H01L2224/0239 ,  H01L2224/0345 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05024 ,  H01L2224/05166 ,  H01L2224/05567 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/06102 ,  H01L2224/09103 ,  H01L2224/1134 ,  H01L2224/11462 ,  H01L2224/11472 ,  H01L2224/13014 ,  H01L2224/13021 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/1403 ,  H01L2224/141 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/81444 ,  H01L2224/81801 ,  H01L2224/83104 ,  H01L2224/92 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/80203 ,  H01L2224/11 ,  H01L21/78 ,  H01L2224/81 ,  H01L2924/01047 ,  H01L2224/05552

摘要： A semiconductor device includes a first bump that is located over a surface of a semiconductor element, and is formed on a first bump formation face distanced from a back surface of the semiconductor element at a first distance, and a second bump that is located over the surface of the semiconductor element, and is formed on a second bump formation face distanced from the back surface of the semiconductor element at a second distance being longer than the first distance, the second bump having a diameter larger than a diameter of the first bump.

摘要翻译： 半导体器件包括位于半导体元件的表面上方的第一凸点，并且形成在距半导体元件的背面远离第一距离处的第一凸起形成面和位于半导体元件的上方的第二凸起 并且形成在距离半导体元件的背面远离第二距离的第二凸起形成面上，第二距离比第一距离长，第二凸起的直径大于第一凸起的直径。

公开(公告)号：US20150200050A1

公开(公告)日：2015-07-16

申请号：US14540674

申请日：2014-11-13

申请人： FUJITSU LIMITED

发明人： Hiroshi NAKAO ,  Yu YONEZAWA ,  Takahiko SUGAWARA ,  Yoshiyasu NAKASHIMA ,  Yoshikatsu ISHIZUKI ,  Shinya SASAKI ,  Shinya IIJIMA

IPC分类号： H01F27/28 ,  H01F41/22

CPC分类号： H01F41/22 ,  H01F17/04 ,  H01F2017/002 ,  H01F2017/065 ,  H01F2038/026 ,  Y10T29/4902

摘要： An inductor apparatus includes: a substrate including an electrical insulation property and a non-magnetic material; and a plurality of inductors disposed in the substrate so as to extend from a first surface of the substrate to a second surface of the substrate, each of the plurality of inductors including: an inductor conductive part that has an electrical conductivity and extends in a thickness direction of the substrate; and a magnetic layer that covers a side of the inductor conductive part and include a relative permeability and a soft magnetic material.

摘要翻译： 电感器装置包括：具有电绝缘性的基板和非磁性材料; 以及多个电感器，其设置在所述基板中，以从所述基板的第一表面延伸到所述基板的第二表面，所述多个电感器中的每一个包括：电感器导电部，其具有导电性并且以厚度 基板的方向; 以及覆盖电感器导电部分的一侧并包括相对磁导率和软磁性材料的磁性层。