专利检索 cpc:"H01L2224/09103" 第 1 页

1.

发明申请
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法

公开(公告)号：US20130187271A1

公开(公告)日：2013-07-25

申请号：US13786991

申请日：2013-03-06

申请人： FUJITSU LIMITED , FUJITSU TEN LIMITED

发明人： Motoaki TANI , Shinya IIJIMA , Shinichi SUGIURA , Hiromichi WATANABE

IPC分类号： H01L23/498

CPC分类号： H01L23/49811 , H01L21/563 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/81 , H01L2224/02166 , H01L2224/02311 , H01L2224/02313 , H01L2224/02331 , H01L2224/0239 , H01L2224/0345 , H01L2224/03912 , H01L2224/0401 , H01L2224/05009 , H01L2224/05024 , H01L2224/05166 , H01L2224/05567 , H01L2224/05644 , H01L2224/0603 , H01L2224/06102 , H01L2224/09103 , H01L2224/1134 , H01L2224/11462 , H01L2224/11472 , H01L2224/13014 , H01L2224/13021 , H01L2224/13023 , H01L2224/13024 , H01L2224/13144 , H01L2224/13147 , H01L2224/1403 , H01L2224/141 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/81203 , H01L2224/81205 , H01L2224/81444 , H01L2224/81801 , H01L2224/83104 , H01L2224/92 , H01L2224/92125 , H01L2224/94 , H01L2924/00014 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/14 , H01L2924/00 , H01L2924/00012 , H01L2224/80203 , H01L2224/11 , H01L21/78 , H01L2224/81 , H01L2924/01047 , H01L2224/05552

摘要： A semiconductor device includes a first bump that is located over a surface of a semiconductor element, and is formed on a first bump formation face distanced from a back surface of the semiconductor element at a first distance, and a second bump that is located over the surface of the semiconductor element, and is formed on a second bump formation face distanced from the back surface of the semiconductor element at a second distance being longer than the first distance, the second bump having a diameter larger than a diameter of the first bump.

摘要翻译： 半导体器件包括位于半导体元件的表面上方的第一凸点，并且形成在距半导体元件的背面远离第一距离处的第一凸起形成面和位于半导体元件的上方的第二凸起并且形成在距离半导体元件的背面远离第二距离的第二凸起形成面上，第二距离比第一距离长，第二凸起的直径大于第一凸起的直径。

2.

发明申请
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法

公开(公告)号：US20110233765A1

公开(公告)日：2011-09-29

申请号：US13028419

申请日：2011-02-16

申请人： Motoaki TANI , Shinya Iijima , Shinichi Sugiura , Hiromichi Watanabe

发明人： Motoaki TANI , Shinya Iijima , Shinichi Sugiura , Hiromichi Watanabe

IPC分类号： H01L23/48 , H01L21/52

CPC分类号： H01L23/49811 , H01L21/563 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/81 , H01L2224/02166 , H01L2224/02311 , H01L2224/02313 , H01L2224/02331 , H01L2224/0239 , H01L2224/0345 , H01L2224/03912 , H01L2224/0401 , H01L2224/05009 , H01L2224/05024 , H01L2224/05166 , H01L2224/05567 , H01L2224/05644 , H01L2224/0603 , H01L2224/06102 , H01L2224/09103 , H01L2224/1134 , H01L2224/11462 , H01L2224/11472 , H01L2224/13014 , H01L2224/13021 , H01L2224/13023 , H01L2224/13024 , H01L2224/13144 , H01L2224/13147 , H01L2224/1403 , H01L2224/141 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/81203 , H01L2224/81205 , H01L2224/81444 , H01L2224/81801 , H01L2224/83104 , H01L2224/92 , H01L2224/92125 , H01L2224/94 , H01L2924/00014 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/14 , H01L2924/00 , H01L2924/00012 , H01L2224/80203 , H01L2224/11 , H01L21/78 , H01L2224/81 , H01L2924/01047 , H01L2224/05552

摘要： A semiconductor device includes a first bump that is located over a surface of a semiconductor element, and is formed on a first bump formation face distanced from a back surface of the semiconductor element at a first distance, and a second bump that is located over the surface of the semiconductor element, and is formed on a second bump formation face distanced from the back surface of the semiconductor element at a second distance being longer than the first distance, the second bump having a diameter larger than a diameter of the first bump.

摘要翻译： 半导体器件包括位于半导体元件的表面上方的第一凸点，并且形成在距第一距离半导体元件的背面远离的第一凸起形成面和位于半导体元件的上方的第二凸起并且形成在距离半导体元件的背面远离第二距离的第二凸起形成面上，第二距离比第一距离长，第二凸起的直径大于第一凸块的直径。

3.

发明授权
Integrated circuit chip, integrated circuit package and display apparatus including the integrated circuit chip 有权

公开(公告)号：US11721640B2

公开(公告)日：2023-08-08

申请号：US17543920

申请日：2021-12-07

申请人： Samsung Electronics Co., Ltd.

发明人： Jun-gu Kang , Young-mok Kim , Woon-bae Kim , Dae-cheol Seong , Yune-seok Chung

IPC分类号： H01L23/552 , H01L23/48 , H01L23/00 , H01L21/74 , H01L27/12

CPC分类号： H01L23/552 , H01L21/743 , H01L23/481 , H01L24/05 , H01L24/06 , H01L24/14 , H01L27/1203 , H01L2224/0401 , H01L2224/0557 , H01L2224/09103 , H01L2224/1403

摘要： An integrated circuit chip includes an SOI substrate having a structure in which a bulk substrate, a buried insulating film, and a semiconductor body layer are sequentially stacked, a conductive ion implantation region formed at a position adjacent to the buried insulating film in the bulk substrate, an integrated circuit portion formed on an active surface of the semiconductor body layer, and a penetrating electrode portion arranged at a position spaced apart from the integrated circuit portion in a horizontal direction, the penetrating electrode portion penetrating the semiconductor body layer and the buried insulating layer in a vertical direction, and the penetrating electrode portion connected to the conductive ion implantation region. An integrated circuit package and a display device include the integrated circuit chip.

4.

发明公开
SEMICONDUCTOR PACKAGE 审中-公开

公开(公告)号：US20240194626A1

公开(公告)日：2024-06-13

申请号：US18584469

申请日：2024-02-22

申请人： Samsung Electronics Co., Ltd.

发明人： SOOJEOUNG PARK , HEESEOK LEE , HEI SEUNG KIM

IPC分类号： H01L23/00 , H01L23/31 , H01L23/538

CPC分类号： H01L24/09 , H01L24/05 , H01L24/08 , H01L24/16 , H01L24/73 , H01L23/3128 , H01L23/5389 , H01L2224/02313 , H01L2224/02333 , H01L2224/02381 , H01L2224/05569 , H01L2224/08112 , H01L2224/08225 , H01L2224/08265 , H01L2224/0903 , H01L2224/09103 , H01L2224/16112 , H01L2224/16227 , H01L2224/16265 , H01L2224/73204 , H01L2924/19041 , H01L2924/19103

摘要： A semiconductor package includes a redistribution layer and a semiconductor chip provided on the redistribution layer having a first surface and a second surface opposite to the first surface. The semiconductor chip includes a first chip pad and a second chip pad which are exposed at the first surface. The semiconductor package further includes a capacitor chip disposed between the first surface and the redistribution layer and including a capacitor chip pad connected to the first chip pad, an insulating layer covering the first surface and the capacitor chip, and a conductive post being in contact with the second chip pad and penetrating the insulating layer so as to be connected to the redistribution layer. The conductive post may be spaced apart from the capacitor chip.