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115 条记录 (耗时 0.038 秒)

    Use of boron carbide as an etch-stop and barrier layer for copper dual damascene metallization
    2.
    发明授权
    Use of boron carbide as an etch-stop and barrier layer for copper dual damascene metallization 有权
    使用碳化硼作为铜双镶嵌金属化的蚀刻阻挡层和阻挡层

    公开(公告)号：US06424044B1

    公开(公告)日：2002-07-23

    申请号：US10050697

    申请日：2002-01-18

    申请人： Licheng M. Han ,  Xu Yi ,  Joseph Zhifeng Xie ,  Mei Sheng Zhou ,  Simon Chooi

    发明人： Licheng M. Han ,  Xu Yi ,  Joseph Zhifeng Xie ,  Mei Sheng Zhou ,  Simon Chooi

    IPC分类号： H01L2348

    CPC分类号： H01L21/76834 ,  H01L21/76807 ,  H01L21/76829 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of forming a boron carbide layer for use as a barrier and an etch-stop layer in a copper dual damascene structure, and the structure itself are disclosed. In addition to providing a good barrier to copper diffusion, good insulating properties, high etch selectivity with respect to dielectric insulators, boron carbide also provides good electrical characteristics because of its low dielectric constant of less than 5. The amorphous boron carbide is formed in a PECVD chamber by introducing a boron source gas such as B2H6, B5H9+, and carbon source gas such as CH4 and C2H6 at a deposition temperature of about 400° C. Any one, or any combination of the passivation, etch-stop, cap layers of the damascene structure can comprise boron carbide.

    摘要翻译： 公开了一种形成用作铜双镶嵌结构中的屏障和蚀刻停止层的碳化硼层的方法，以及结构本身。 除了提供对铜扩散的良好屏障之外，良好的绝缘性能，相对于介电绝缘体的高蚀刻选择性，由于其低介电常数小于5，碳化硼也提供良好的电特性。无定形碳化硼形成于 通过在约400℃的沉积温度下引入诸如B 2 H 6，B 5 H 9+的硼源气体和诸如CH 4和C 2 H 6的碳源气体的PECVD室。钝化，蚀刻停止，盖层的任何一种或任何组合 镶嵌结构可以包括碳化硼。

    Method of using silicon rich carbide as a barrier material for fluorinated materials
    4.
    发明授权
    Method of using silicon rich carbide as a barrier material for fluorinated materials 失效
    使用富碳化碳作为氟化材料的阻挡材料的方法

    公开(公告)号：US06730591B2

    公开(公告)日：2004-05-04

    申请号：US10186532

    申请日：2002-07-01

    申请人： Licheng Han ,  Xu Yi ,  Simon Chooi ,  Mei Sheng Zhou ,  Joseph Zhifeng Xie

    发明人： Licheng Han ,  Xu Yi ,  Simon Chooi ,  Mei Sheng Zhou ,  Joseph Zhifeng Xie

    IPC分类号： H01L214763

    CPC分类号： H01L21/76834 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3127 ,  H01L21/314 ,  H01L21/31629 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76831 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  Y10S438/931 ,  H01L2924/00

    摘要： A method of forming interconnect structures in a semiconductor device, comprising the following steps. A semiconductor structure is provided. In the first embodiment, at least one metal line is formed over the semiconductor structure. A silicon-rich carbide barrier layer is formed over the metal line and semiconductor structure. Finally, a dielectric layer, that may be fluorinated, is formed over the silicon-rich carbide layer. In the second embodiment, at least one fluorinated dielectric layer, that may be fluorinated, is formed over the semiconductor structure. The dielectric layer is patterned to form an opening therein. A silicon-rich carbide barrier layer is formed within the opening. A metallization layer is deposited over the structure, filling the silicon-rich carbide barrier layer lined opening. Finally, the metallization layer may be planarized to form a planarized metal structure within the silicon-rich carbide barrier layer lined opening.

    摘要翻译： 一种在半导体器件中形成互连结构的方法，包括以下步骤。 提供半导体结构。 在第一实施例中，在半导体结构上形成至少一条金属线。 在金属线和半导体结构之上形成富含碳的碳化物阻挡层。 最后，在富含硅的碳化物层上形成可被氟化的介电层。 在第二实施例中，在半导体结构上形成至少一个可被氟化的氟化介电层。 图案化电介质层以在其中形成开口。 在开口内形成富含碳的碳化物阻挡层。 在结构上沉积金属化层，填充富含硅的碳化物阻挡层衬里的开口。 最后，金属化层可以被平坦化以在富含硅的碳化物阻挡层衬里的开口内形成平坦化的金属结构。

    Damascene structure with reduced capacitance using a carbon nitride, boron nitride, or boron carbon nitride passivation layer, etch stop layer, and/or cap layer
    8.
    发明授权
    Damascene structure with reduced capacitance using a carbon nitride, boron nitride, or boron carbon nitride passivation layer, etch stop layer, and/or cap layer 有权
    使用碳氮化物，氮化硼或氮化硼钝化层，蚀刻停止层和/或覆盖层的具有降低的电容的镶嵌结构

    公开(公告)号：US06165891A

    公开(公告)日：2000-12-26

    申请号：US435434

    申请日：1999-11-22

    申请人： Simon Chooi ,  Yi Xu ,  Mei Sheng Zhou

    发明人： Simon Chooi ,  Yi Xu ,  Mei Sheng Zhou

    IPC分类号： H01L21/311 ,  H01L21/318 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/4763 ,  G03C5/00 ,  H01L21/302 ,  H01L23/48

    CPC分类号： H01L21/76835 ,  H01L21/31122 ,  H01L21/318 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5226 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method and structure for forming a damascene structure with reduced capacitance by forming one or more of: the passivation layer, the etch stop layer, and the cap layer using a low dielectric constant material comprising carbon nitride, boron nitride, or boron carbon nitride. The method begins by providing a semiconductor structure having a first conductive layer thereover. A passivation layer is formed on the first conductive layer. A first dielectric layer is formed over the passivation layer, and an etch stop layer is formed over the first dielectric layer. A second dielectric layer is formed over the etch stop layer, and an optional cap layer can be formed over the second dielectric layer. The cap layer, the second dielectric layer, the etch stop layer, and the first dielectric layer are patterned to form a via opening stopping on said passivation layer and a trench opening stopping on the first conductive layer. A carbon nitride passivation layer, etch stop layer, or cap layer can be formed by magnetron sputtering from a graphite target in a nitrogen atmosphere. A boron nitride passivation layer, etch stop layer, or cap layer can be formed by PECVD using B.sub.2 H.sub.6, ammonia, and nitrogen. A boron carbon nitride passivatation layer, etch stop layer, or cap layer can be formed by magnetron sputtering from a graphite target in a nitrogen and B.sub.2 H.sub.6 atmosphere.

    摘要翻译： 通过使用包含碳氮化物，氮化硼或碳氮化硼的低介电常数材料通过形成钝化层，蚀刻停止层和盖层中的一个或多个来形成具有降低的电容的镶嵌结构的方法和结构。 该方法开始于提供其上具有第一导电层的半导体结构。 在第一导电层上形成钝化层。 第一电介质层形成在钝化层之上，并且在第一介电层上形成蚀刻停止层。 第二介电层形成在蚀刻停止层上方，并且可以在第二介电层上形成任选的盖层。 图案化盖层，第二电介质层，蚀刻停止层和第一介电层，以形成在所述钝化层上停止的通孔开口和在第一导电层上停止的沟槽开口。 碳氮化物钝化层，蚀刻停止层或盖层可以通过在氮气气氛中的石墨靶磁控溅射来形成。 可以通过使用B2H6，氨和氮的PECVD形成氮化硼钝化层，蚀刻停止层或盖层。 硼氮化物钝化层，蚀刻停止层或盖层可以通过在氮气和B2H6气氛中的石墨靶的磁控溅射形成。