摘要:
The invention relates to a method for treating biogenic residues, especially cafeteria leftovers, meat refuse, clarification sludge, organic industrial wastes and the like, wherein the residues are subjected to temperature pressure hydrolysis. In order to obtain a higher flow rate for residues using a small apparatus, the invention provides that temperature pressure hydrolysis is carried out in a cylindrical section in a first direction and in an external radial section in a second direction, the second direction being opposite to the first direction.
摘要:
A reactor (10) for anaerobic waste water treatment is designed as a loop-type column reactor comprising a central flow channel (20). In the annular space (40) between the central flow channel (20) and the reactor wall, there are positioned carrier elements (50) for immobilizing microorganisms, with flow passages being provided between adjacent carrier elements (50). The lower portion of the reactor (30), below the carrier elements, is designed as a space intended to receive waste water having microorganisms floating therein during operation of the reactor (10). During operation, there are provided both floating microorganisms and microorganisms that are immobilized on the carrier elements. The waste water to be treated flows centrally downward and up again along the carrier elements (40), with the flow being generated in part by the gas development of the microorganisms. The reactor is used to carry out a process for anaerobic waste water treatment, the reactor being suited for waste water treatment in the food processing industry and the feeding stuff industry as well as in the paper industry and the textile industry.
摘要:
A reactor (10) for anaerobic waste water treatment is designed as a loop-type column reactor comprising a central flow channel (20). In the annular space (40) between the central flow channel (20) and the reactor wall, there are positioned carrier elements (50) for immobilizing microorganisms, with flow passages being provided between adjacent carrier elements (50). The lower portion of the reactor (30), below the carrier elements, is designed as a space intended to receive waste water having microorganisms floating therein during operation of the reactor (10). During operation, there are provided both floating microorganisms and microorganisms that are immobilized on the carrier elements. The waste water to be treated flows centrally downward and up again along the carrier elements (40), with the flow being generated in part by the gas development of the microorganisms. The reactor is used to carry out a process for anaerobic waste water treatment, the reactor being suited for waste water treatment in the food processing industry and the feeding stuff industry as well as in the paper industry and the textile industry.
摘要:
A FET gas sensor having a relatively low operating temperature, for example, room temperature, is free from cross sensitivities from interfering gases by a preceding in-line filter. The sensor's service life is substantially stabilizable by using fabric-like activated charcoal filters which can be regenerated by a moderate temperature increase, and by limiting the diffusion of the analyte gas, which is made possible by the relatively small amount of gas detectable on the sensitive layer of the sensor. This substantially increases the service life of the filters. The gas sensor eliminates cross sensitivities to thereby increase the detection reliability thereof. Also, the gas sensor has relative long term stability and is economical to build. The gas sensor can read relatively weak signals generated by gas-sensitive layers, for example, without other stronger gas signals interfering with the weak signals.
摘要:
A gas sensitive field effect transistor comprises a semiconductor substrate that includes a capacitance well, and source and drain regions of a field effect transistor. A gate of the field effect transistor is separated from the semiconductor substrate by an insulator, and a gas sensitive layer separated from the gate by an air gap. The field effect transistor provides an output signal indicative of the presence of a target gas within the air gap to an amplifier, which provides an amplified output signal that is electrically coupled to the capacitance well.
摘要:
Integrated semiconductor circuits, in particular, dynamic random access memories include a multiplicity of generator circuits for generating internal voltage levels from an externally applied supply voltage. During testing, the internal voltage levels are altered by the output voltage generated at the output of the generator circuit being adapted to an externally applied test voltage. If the test voltage is outside a tolerance range, the semiconductor circuit maybe destroyed. A protection circuit connected in parallel with the generator circuit limits the output voltage.
摘要:
An integrated semiconductor memory includes word lines connected to a first voltage potential via a respective first controllable switch and a respective third controllable switch and to a second voltage potential via a respective second controllable switch. In order to test whether one of the word lines is connected to the first voltage potential via its respective first and third controllable switches, the one of the word lines is connected to a comparator circuit via the respective second controllable switch and a driver line. After the respective first and third controllable switches have been controlled into the on state, in a test operating state of the integrated semiconductor memory, the respective second controllable switch is controlled into the on state and a potential state on the word line is evaluated by the comparator circuit. The result of the evaluation is fed to an external data terminal by an evaluation signal.
摘要:
An integrated circuit includes a circuit component, a first control circuit and a switchable resistance network. An input voltage is fed to the circuit component on the input side. A control signal generated by the first control circuit is fed to the control terminal of the circuit component. With the switchable resistance network, the first resistance or the second resistance is connected between an output terminal of the circuit component and the output terminal of the integrated circuit to generate a voltage drop between the input side and the output terminal of the circuit component. The integrated circuit makes it possible to generate a current at the output terminal of the circuit component in a manner dependent on the control signal and the voltage dropped between the input side and the output terminal of the circuit component. Families of characteristic curves of transistors of an integrated circuit are determined by the integrated circuit.
摘要:
A field effect semiconductor comprises a semiconductor layer having a surface, a first and a second semiconductor region in the semiconductor layer, which are arranged next to one another at the surface of the semiconductor layer, an insulating layer between the first semiconductor region and the second semiconductor region, a semiconductor strip on the surface of the semiconductor layer, which semiconductor strip overlaps the first semiconductor region and the second semiconductor region and adjoins these. A gate overlaps the semiconductor strip at least in the region of the insulating layer. A gate dielectric insulates the gate from the semiconductor strip the first semiconductor region and the second semiconductor region. The semiconductor strip and the gate being formed such that the semiconductor strip is electrically insulating at a first predetermined gate voltage and is electrically conductive at a second predetermined gate voltagero.
摘要:
A voltage generator arrangement supplies a largely constant output voltage with a high current driver capability. A bandgap reference circuit drives a voltage generator on the output side, if necessary via an impedance converter. The bandgap reference circuit and the impedance converter on the one hand, and the voltage generator on the other hand, are connected to different reference ground potential lines. The voltage generator on the output side is preceded by a correction circuit, which corrects for the voltage drop on that reference ground potential line to which the output-side voltage generator is connected. The voltage generator arrangement is suitable for a greater integration density.