Bumper system for a motor vehicle and method for energy dissipation in the event of a head-on collision
    3.
    发明授权
    Bumper system for a motor vehicle and method for energy dissipation in the event of a head-on collision 有权
    用于机动车辆的保险杠系统和在正面碰撞的情况下能量消散的方法

    公开(公告)号:US08733823B2

    公开(公告)日:2014-05-27

    申请号:US13600700

    申请日:2012-08-31

    IPC分类号: B62D25/08 B60R19/34

    摘要: A bumper system for a motor vehicle includes a bumper cross member which is arranged transversely to a travel direction and has two attachment zones for connection to two side rails arranged in parallel relationship to the travel direction. The bumper cross member has a center portion extending between the attachment zones and two end zones to close off the bumper cross member to vehicle sides. A deformation element is arranged behind each of the end zones and constructed to support in the event of a head-on collision with slight overlap the end zone which undergoes a buckling as a result of the head-on collision. At least one belt element at least partly surrounds a circumference of the deformation element and is secured to at least one of the side rails.

    摘要翻译: 一种用于机动车辆的保险杠系统包括横向于行进方向布置的保险杠横梁,并且具有用于连接到与行驶方向平行的两个侧轨的两个附接区域。 保险杠横梁具有在附接区域和两个端部区域之间延伸的中心部分,以将保险杠横向构件关闭到车辆侧面。 在每个端部区域之后布置有变形元件,并且构造成在遇到头部碰撞的情况下支撑,由于正面碰撞而经历弯曲的端部区域轻微重叠。 至少一个带元件至少部分地围绕变形元件的圆周并且固定到至少一个侧轨。

    BUMPER SYSTEM FOR A MOTOR VEHICLE AND METHOD FOR ENERGY DISSIPATION IN THE EVENT OF A HEAD-ON COLLISION
    4.
    发明申请
    BUMPER SYSTEM FOR A MOTOR VEHICLE AND METHOD FOR ENERGY DISSIPATION IN THE EVENT OF A HEAD-ON COLLISION 有权
    用于电动车辆的保险杠系统和在头部碰撞事件中能量消耗的方法

    公开(公告)号:US20130234456A1

    公开(公告)日:2013-09-12

    申请号:US13600700

    申请日:2012-08-31

    IPC分类号: B60R19/34

    摘要: A bumper system for a motor vehicle includes a bumper cross member which is arranged transversely to a travel direction and has two attachment zones for connection to two side rails arranged in parallel relationship to the travel direction. The bumper cross member has a center portion extending between the attachment zones and two end zones to close off the bumper cross member to vehicle sides. A deformation element is arranged behind each of the end zones and constructed to support in the event of a head-on collision with slight overlap the end zone which undergoes a buckling as a result of the head-on collision. At least one belt element at least partly surrounds a circumference of the deformation element and is secured to at least one of the side rails.

    摘要翻译: 一种用于机动车辆的保险杠系统包括横向于行进方向布置的保险杠横梁,并且具有用于连接到与行驶方向平行的两个侧轨的两个附接区域。 保险杠横梁具有在附接区域和两个端部区域之间延伸的中心部分,以将保险杠横向构件关闭到车辆侧面。 在每个端部区域之后布置有变形元件,并且构造成在遇到头部碰撞的情况下支撑,由于正面碰撞而经历弯曲的端部区域轻微重叠。 至少一个带元件至少部分地围绕变形元件的圆周并且固定到至少一个侧轨。

    INTERIOR TRIM PART
    5.
    发明申请
    INTERIOR TRIM PART 有权
    室内饰品

    公开(公告)号:US20130062867A1

    公开(公告)日:2013-03-14

    申请号:US13592463

    申请日:2012-08-23

    申请人: Stefan Schmitz

    发明人: Stefan Schmitz

    IPC分类号: B60R13/02 B60R21/16

    摘要: An interior trim part for a bodywork component has a lighting system with a first component that generates a light signal and a second component that outputs the light signal toward the passenger compartment of the motor vehicle. The bodywork component has a moveable region (200) that can be moved with respect to a non-moveable region (300), from a stationary normal position into an open position displaced with respect to the non-moveable region (300). The first component of the light system generates, in the normal position of the moveable region (200), a light signal that is input into the second component which passes on the light signal in the manner of a lightguide.

    摘要翻译: 用于车身部件的内饰件具有照明系统,其具有产生光信号的第一部件和向所述机动车辆的乘客室输出所述光信号的第二部件。 身体部件具有能够相对于不可移动区域(300)从静止正常位置移动到相对于不可移动区域(300)移位的打开位置的可移动区域(200)。 光系统的第一分量在可移动区域(200)的正常位置产生输入到以光导方式传递光信号的第二分量的光信号。

    Method for operating a remote control, and remote control
    6.
    发明授权
    Method for operating a remote control, and remote control 有权
    操作遥控器的方法,以及遥控器

    公开(公告)号:US06633227B1

    公开(公告)日:2003-10-14

    申请号:US09485378

    申请日:2000-05-09

    申请人: Stefan Schmitz

    发明人: Stefan Schmitz

    IPC分类号: G50B1900

    CPC分类号: G08C19/28

    摘要: A method of allocating a remote control to a base station. The base station delivers a search signal. The remote control receives the search signal, compares it with a reference signal, and delivers a contact signal if they match. On receiving certain contact signals in response, the base station then delivers an identification signal, and after receiving it, the remote control sends back to the base station a code signal identifying it unambiguously.

    摘要翻译: 将遥控器分配给基站的方法。 基站提供搜索信号。 遥控器接收搜索信号,将其与参考信号进行比较,并在匹配时传送接触信号。 在接收到响应的某些接触信号时,基站然后发送识别信号,并且在接收到之后,遥控器向基站发送明确识别它的码信号。

    SEMICONDUCTOR STRUCTURE HAVING NFET EXTENSION LAST IMPLANTS
    9.
    发明申请
    SEMICONDUCTOR STRUCTURE HAVING NFET EXTENSION LAST IMPLANTS 有权
    具有NFET延伸最后植入物的半导体结构

    公开(公告)号:US20140024181A1

    公开(公告)日:2014-01-23

    申请号:US13551054

    申请日:2012-07-17

    IPC分类号: H01L21/8238

    CPC分类号: H01L21/84 H01L27/1203

    摘要: A method of forming a semiconductor structure which includes an extremely thin silicon-on-insulator (ETSOI) semiconductor structure having a PFET portion and an NFET portion, a gate structure in the PFET portion and the NFET portion, a high quality nitride spacer adjacent to the gate structures in the PFET portion and the NFET portion and a doped faceted epitaxial silicon germanium raised source/drain (RSD) in the PFET portion. An amorphous silicon layer is formed on the RSD in the PFET portion. A faceted epitaxial silicon RSD is formed on the ETSOI adjacent to the high quality nitride in the NFET portion. The amorphous layer in the PFET portion prevents epitaxial growth in the PFET portion during formation of the RSD in the NFET portion. Extensions are ion implanted into the ETSOI underneath the gate structure in the NFET portion.

    摘要翻译: 一种形成半导体结构的方法,其包括具有PFET部分和NFET部分的极薄的绝缘体上硅(ETSOI)半导体结构,PFET部分中的栅极结构和NFET部分,高质量氮化物间隔物 PFET部分中的栅极结构和NFET部分以及PFET部分中的掺杂多面外延硅锗升高源极/漏极(RSD)。 在PFET部分的RSD上形成非晶硅层。 在与NFET部分中的高质量氮化物相邻的ETSOI上形成刻面外延硅RSD。 PFET部分中的非晶层防止在NFET部分中形成RSD期间在PFET部分中的外延生长。 扩展件被离子注入到NFET部分中的栅极结构下面的ETSOI中。