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23 条记录 (耗时 0.019 秒)

    Characterizing flare of a projection lens
    1.
    发明申请
    Characterizing flare of a projection lens 有权
    表征投影镜头的耀斑

    公开(公告)号：US20060046167A1

    公开(公告)日：2006-03-02

    申请号：US10933090

    申请日：2004-09-01

    申请人： Bo Wu ,  Abdurrahman Sezginer ,  Franz Zach

    发明人： Bo Wu ,  Abdurrahman Sezginer ,  Franz Zach

    IPC分类号： G03C5/00

    CPC分类号： G03F7/70941 ,  G03F1/44 ,  G03F7/70591

    摘要： Flare of an imaging system is measured using resist by employing the imaging system to directly expose a first part of the resist at an image plane of the imaging system to a first dose of radiation and to indirectly expose a second part of the resist as a result of flare. The imaging system exposes the second part of the resist to a second dose of radiation. Flare of the imaging system is determined from a pattern that is formed in the second part of the resist.

    摘要翻译： 使用抗蚀剂通过使用成像系统将成像系统的图像平面处的抗蚀剂的第一部分直接暴露于第一剂量的辐射并且间接暴露抗蚀剂的第二部分来测量成像系统的耀斑，结果 的耀斑。 成像系统将抗蚀剂的第二部分暴露于第二剂量的辐射。 从形成在抗蚀剂的第二部分的图案确定成像系统的光斑。

    Method for characterization of the illuminator in a lithographic system
    2.
    发明申请
    Method for characterization of the illuminator in a lithographic system 审中-公开
    光刻系统中照明器的表征方法

    公开(公告)号：US20060072097A1

    公开(公告)日：2006-04-06

    申请号：US10960357

    申请日：2004-10-06

    申请人： Franz Zach ,  Bo Wu ,  Abdurrahman Sezginer

    发明人： Franz Zach ,  Bo Wu ,  Abdurrahman Sezginer

    IPC分类号： G03B27/72

    CPC分类号： G03B27/72 ,  G03F7/70133

    摘要： Pupil intensity distribution of an imaging system is measured by exposing an image field of a radiation detector with a bright feature, positioning the detector at a distance away from the image plane, and exposing the image field of the detector with a bright feature, resulting in a cumulative exposure of the image field of the detector from the two exposures. A characteristic of a spatial pattern in the cumulative exposure of the image field of the detector is then determined.

    摘要翻译： 成像系统的瞳孔强度分布通过用具有明亮特征的放射线检测器的图像场曝光来测量，将检测器定位在远离图像平面的距离处，并且用明亮特征曝光检测器的图像场，导致 来自两次曝光的检测器的图像场的累积曝光。 然后确定检测器的图像场的累积曝光中的空间图案的特性。

    Method of compensating photomask data for the effects of etch and lithography processes
    3.
    发明申请
    Method of compensating photomask data for the effects of etch and lithography processes 有权
    补偿光掩模数据的方法，用于蚀刻和光刻工艺的影响

    公开(公告)号：US20070143733A1

    公开(公告)日：2007-06-21

    申请号：US11541921

    申请日：2006-10-02

    申请人： Franz Zach ,  Jesus Carrero ,  Bayram Yenikaya ,  Gokhan Percin ,  Xuelong Cao ,  Abdurrahman Sezginer

    发明人： Franz Zach ,  Jesus Carrero ,  Bayram Yenikaya ,  Gokhan Percin ,  Xuelong Cao ,  Abdurrahman Sezginer

    IPC分类号： G06F17/50

    CPC分类号： G03F1/36

    摘要： A method for synthesizing a photomask data set from a given target layout, including the following steps: (a) providing a set of target polygons for the target layout; (b) fitting a smooth curve to a target polygon of the set of target polygons, the curve having a set of etch-target points; (c) moving the etch target points according to a model of an etch process to produce a set of lithography-target points; and (d) synthesizing a photomask data set based on a model of a lithography process and the set of lithography-target points.

    摘要翻译： 一种用于从给定目标布局合成光掩模数据集的方法，包括以下步骤：（a）为目标布局提供一组目标多边形; （b）将平滑曲线拟合到所述目标多边形集合的目标多边形，所述曲线具有一组蚀刻目标点; （c）根据蚀刻工艺的模型移动蚀刻目标点以产生一组光刻目标点; 以及（d）基于光刻工艺的模型和所述一组光刻目标点合成光掩模数据集。

    Method for correcting position-dependent distortions in patterning of integrated circuits
    5.
    发明申请
    Method for correcting position-dependent distortions in patterning of integrated circuits 有权
    用于校正集成电路图案化中的位置相关失真的方法

    公开(公告)号：US20060048091A1

    公开(公告)日：2006-03-02

    申请号：US10933192

    申请日：2004-09-01

    申请人： Devendra Joshi ,  Abdurrahman Sezginer ,  Franz Zach

    发明人： Devendra Joshi ,  Abdurrahman Sezginer ,  Franz Zach

    IPC分类号： G06F17/50 ,  G03F1/00 ,  G21K5/00

    CPC分类号： G03F1/36

    摘要： A method and system for reducing the computation time required to apply position-dependent corrections to lithography, usually mask, data is disclosed. Optical proximity or process corrections are determined for a few instances of a repeating cluster or object, usually at widely separated locations and then interpolating the corrections to the other instances of the repeating cluster based on their positions in the exposure field. Or, optical proximity corrections can be applied to the repeating cluster of objects for different values of flare intensity, or another parameter of patterning imperfection, such as by calculating the value of the flare at the location of each instance of the repeating cluster, and interpolating the optical proximity corrections to those values of flare.

    摘要翻译： 公开了一种用于减少对光刻应用位置相关校正所需的计算时间的方法和系统，通常是屏蔽数据。 通常在广泛分离的位置处对重复的簇或对象的几个实例确定光学邻近度或过程校正，然后基于它们在曝光区域中的位置将校正内插到重复簇的其他实例。 或者，可以将光学邻近校正应用于不同的闪光强度值的对象的重复簇或者图案化缺陷的另一参数，例如通过计算重复簇的每个实例的位置处的闪光的值，以及内插 光学接近度校正到这些闪光值。

    Method for measuring and verifying stepper illumination
    6.
    发明申请
    Method for measuring and verifying stepper illumination 有权
    步进照明的测量和验证方法

    公开(公告)号：US20060268254A1

    公开(公告)日：2006-11-30

    申请号：US11141803

    申请日：2005-05-31

    申请人： Gokhan Percin ,  Abdurrahman Sezginer ,  Franz Zach

    发明人： Gokhan Percin ,  Abdurrahman Sezginer ,  Franz Zach

    IPC分类号： G03B27/72

    CPC分类号： G03F7/7025 ,  G03F7/70591

    摘要： An apparatus and method for characterizing an illumination pupil of an exposure tool comprises forming a plurality of pinhole test patterns at a plurality of test site locations to facilitate locating test pattern edges for extracting therefrom the illumination pupil characteristics of the exposure tool.

    摘要翻译： 用于表征曝光工具的照明光瞳的装置和方法包括在多个测试位置处形成多个针孔测试图案，以便于定位测试图案边缘以从其中提取曝光工具的照明光瞳特性。

    Method and system for reducing the impact of across-wafer variations on critical dimension measurements
    7.
    发明申请
    Method and system for reducing the impact of across-wafer variations on critical dimension measurements 有权

    公开(公告)号：US20060073686A1

    公开(公告)日：2006-04-06

    申请号：US10971350

    申请日：2004-10-22

    申请人： Franz Zach ,  Abdurrahman Sezginer ,  Gokhan Percin

    发明人： Franz Zach ,  Abdurrahman Sezginer ,  Gokhan Percin

    IPC分类号： H01L21/22

    CPC分类号： G03B27/72 ,  G03F7/70441 ,  G03F7/70558 ,  G03F7/70625 ,  G03F7/70641

    摘要： First and second exposures of a mask onto a wafer are performed such that the exposure field of the second exposure partially overlaps the exposure field of the first exposure. A characteristic of a set of features is determined, and a value of a parameter of an optical proximity correction model is determined. An alignment feature can be used to align a measurement tool. In yet another embodiment, pupil intensity distribution of an imaging system is measured by exposing an image field of a radiation detector with a bright feature, positioning the detector at a distance away from the image plane, and exposing the image field of the detector with a bright feature, resulting in a cumulative exposure of the image field of the detector from the two exposures. A characteristic of a spatial pattern in the cumulative exposure of the image field of the detector is then determined.

    Method for real time monitoring and verifying optical proximity correction model and method
    9.
    发明申请
    Method for real time monitoring and verifying optical proximity correction model and method 有权
    用于实时监测和验证光学邻近校正模型和方法的方法

    公开(公告)号：US20070006116A1

    公开(公告)日：2007-01-04

    申请号：US11169616

    申请日：2005-06-30

    申请人： Gokhan Percin ,  Ram Ramanujam ,  Franz Zach ,  Koichi Suzuki

    发明人： Gokhan Percin ,  Ram Ramanujam ,  Franz Zach ,  Koichi Suzuki

    IPC分类号： G06F17/50

    CPC分类号： G03F1/84 ,  G03F1/36 ,  G03F1/44 ,  G03F7/70441 ,  G03F7/70683

    摘要： This invention relates to a method for real time monitoring and verifying optical proximity correction (OPC) models and methods in production. Prior to OPC is performed on the integrated circuit layout, a model describing the optical, physical and chemical processes involving lithography should be obtained accurately and precisely. In general, the model is calibrated using the measurements obtained by running wafers through the same lithography, patterning, and etch processes. In this invention, a novel real time method for verifying and monitoring the calibrated model on a production or monitor wafer is presented: optical proximity corrected (OPC-ed) test and verification structures are placed on scribe lines or cut lines of the production or monitor wafer, and with pre-determined schedule, the critical dimensions and images of these test and verification structures are monitored across wafer and across exposure field.

    摘要翻译： 本发明涉及一种用于实时监测和验证生产中的光学邻近校正（OPC）模型和方法的方法。 在对集成电路布局进行OPC之前，应准确准确地描述涉及光刻的光学，物理和化学过程的模型。 通常，使用通过相同的光刻，图案化和蚀刻工艺运行晶片获得的测量来校准模型。 在本发明中，提出了一种用于在生产或监控晶圆上验证和监测校准模型的新型实时方法：将光学邻近校正（OPC-ed）测试和验证结构放置在生产或监视器的划线或切割线上 晶圆，并且具有预定的时间表，这些测试和验证结构的关键尺寸和图像在晶片和曝光场之间进行监测。