公开(公告)号：US08317993B2

公开(公告)日：2012-11-27

申请号：US12461613

申请日：2009-08-18

申请人： Fumio Kuriyama ,  Rei Kiumi ,  Nobutoshi Saito ,  Takashi Takemura ,  Masaaki Kimura ,  Sachiko Takeda ,  Yugang Guo

发明人： Fumio Kuriyama ,  Rei Kiumi ,  Nobutoshi Saito ,  Takashi Takemura ,  Masaaki Kimura ,  Sachiko Takeda ,  Yugang Guo

IPC分类号： C25D7/12 ,  C25D5/48 ,  C02F1/461 ,  C25B1/00

CPC分类号： C23C18/182 ,  B05B13/0228 ,  C23C18/1632 ,  C23C18/1689 ,  C23C18/18 ,  C23C18/1824 ,  C23C18/1837 ,  C25D5/34 ,  C25D5/48 ,  C25D7/123 ,  C25D17/001 ,  H01L21/288 ,  H05K3/241 ,  H05K3/244

摘要： A plating apparatus has a steam treatment chamber configured to perform a steam treatment using steam on a surface of a substrate, and a plating chamber configured to plate the surface of the substrate subjected to the steam treatment. The plating apparatus also has an acid treatment chamber configured to bring the surface of the substrate subjected to the steam treatment into contact with an acid liquid. The plating apparatus includes a frame housing the steam treatment chamber, the acid treatment chamber, and the plating chamber.

摘要翻译： 电镀装置具有蒸汽处理室，其被配置为在基板的表面上进行使用蒸汽的蒸汽处理，以及电镀室，被配置为对经受蒸汽处理的基板的表面进行平板化。 电镀装置还具有配置成使经受蒸汽处理的基板的表面与酸性液体接触的酸处理室。 电镀装置包括容纳蒸汽处理室，酸处理室和电镀室的框架。

公开(公告)号：US20110073482A1

公开(公告)日：2011-03-31

申请号：US12966297

申请日：2010-12-13

申请人： Fumio Kuriyama ,  Takashi Takemura ,  Nobutoshi Saito ,  Masaaki Kimura ,  Rei Kiumi

发明人： Fumio Kuriyama ,  Takashi Takemura ,  Nobutoshi Saito ,  Masaaki Kimura ,  Rei Kiumi

IPC分类号： C25D5/08 ,  C25D21/10

CPC分类号： C25D17/008 ,  C23C18/1628 ,  C25D5/08 ,  C25D7/123 ,  C25D17/001 ,  C25D21/10 ,  H01L21/288 ,  H01L21/2885 ,  H01L24/11 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00

摘要： A plating apparatus for use in forming a plated film in trenches, via holes, or resist openings that are defined in a surface of a semiconductor wafer, and forming bumps to be electrically connected to electrodes of a package, on a surface of a semiconductor wafer. The plating apparatus has a plating tank for holding a plating solution, a holder for holding a workpiece and bringing a surface to be plated of the workpiece into contact with the plating solution in the plating tank, and a ring-shaped nozzle pipe disposed in the plating tank and having a plurality of plating solution injection nozzles for injecting the plating solution to the surface to be plated of the workpiece held by the holder to supply the plating solution into the plating tank.

摘要翻译： 一种电镀装置，用于在半导体晶片的表面中限定的沟槽，通孔或抗蚀剂开口中形成电镀膜，并且在半导体晶片的表面上形成电连接到封装的电极的凸块 。 电镀装置具有用于保持电镀液的镀槽，用于保持工件的保持器，使被加工物的表面与镀槽中的镀液接触，并且设置在该镀槽中的环状喷嘴管 电镀槽，并具有多个电镀液注入喷嘴，用于将电镀液注射到由保持件保持的工件的待镀表面上，以将电镀溶液供应到电镀槽中。

公开(公告)号：US20090311429A1

公开(公告)日：2009-12-17

申请号：US12461613

申请日：2009-08-18

申请人： Fumio Kuriyama ,  Rei Kiumi ,  Nobutoshi Saito ,  Takashi Takemura ,  Masaaki Kimura ,  Sachiko Takeda ,  Yugang Guo

发明人： Fumio Kuriyama ,  Rei Kiumi ,  Nobutoshi Saito ,  Takashi Takemura ,  Masaaki Kimura ,  Sachiko Takeda ,  Yugang Guo

IPC分类号： B05D3/10

CPC分类号： C23C18/182 ,  B05B13/0228 ,  C23C18/1632 ,  C23C18/1689 ,  C23C18/18 ,  C23C18/1824 ,  C23C18/1837 ,  C25D5/34 ,  C25D5/48 ,  C25D7/123 ,  C25D17/001 ,  H01L21/288 ,  H05K3/241 ,  H05K3/244

摘要： A plating apparatus has a steam treatment chamber configured to perform a steam treatment using steam on a surface of a substrate, and a plating chamber configured to plate the surface of the substrate subjected to the steam treatment. The plating apparatus also has an acid treatment chamber configured to bring the surface of the substrate subjected to the steam treatment into contact with an acid liquid. The plating apparatus includes a frame housing the steam treatment chamber, the acid treatment chamber, and the plating chamber.

摘要翻译： 电镀装置具有蒸汽处理室，其被配置为在基板的表面上进行使用蒸汽的蒸汽处理，以及电镀室，被配置为对经受蒸汽处理的基板的表面进行平板化。 电镀装置还具有配置成使经受蒸汽处理的基板的表面与酸性液体接触的酸处理室。 电镀装置包括容纳蒸汽处理室，酸处理室和电镀室的框架。

公开(公告)号：US20070117365A1

公开(公告)日：2007-05-24

申请号：US10571751

申请日：2004-09-29

申请人： Fumio Kuriyama ,  Rei Kiumi ,  Nobutoshi Saito ,  Takashi Takemura ,  Masaaki Kimura ,  Sachiko Takeda ,  Yugang Guo

发明人： Fumio Kuriyama ,  Rei Kiumi ,  Nobutoshi Saito ,  Takashi Takemura ,  Masaaki Kimura ,  Sachiko Takeda ,  Yugang Guo

IPC分类号： H01L21/44

CPC分类号： C23C18/182 ,  B05B13/0228 ,  C23C18/1632 ,  C23C18/1689 ,  C23C18/18 ,  C23C18/1824 ,  C23C18/1837 ,  C25D5/34 ,  C25D5/48 ,  C25D7/123 ,  C25D17/001 ,  H01L21/288 ,  H05K3/241 ,  H05K3/244

摘要： A plating method comprising applying an ultraviolet ray to a surface of a substrate or exposing a surface of a substrate to an ozone gas or bringing a surface to a substrate into contact with ozone water or bringing a surface of a substrate into contact with electrolytic ionized water or performing a team treatment using steam on a surface of a substrate, and plating the surface of the substrate after said applying, exposing, bringing or performing process. A plating method comprising performing a team treatment using steam on a surface of a substrate, and performing a wet process on the surface of the substrate of a substrate with an acidic plating solution, cleaning the surface of the substrate with pure water and cleaning the surface of the substrate with an alkalescent aqueous solution. A plating apparatus adapted to perform at least one of said methods.

摘要翻译： 一种电镀方法，其包括将紫外线施加到基板的表面或将基板的表面暴露于臭氧气体或使表面与基底接触的方式与臭氧水接触或使基板的表面与电解电离水接触 或者使用蒸镀在基板的表面上进行团队处理，以及在施加，曝光，进行或执行处理之后对基板的表面进行电镀。 一种电镀方法，包括使用蒸镀在基材表面进行团队处理，并用酸性电镀液对基板表面进行湿法处理，用纯水清洗基板的表面并清洗表面 的碱性水溶液。 适于执行所述方法中的至少一种的电镀装置。

公开(公告)号：US08252167B2

公开(公告)日：2012-08-28

申请号：US12966297

申请日：2010-12-13

申请人： Fumio Kuriyama ,  Takashi Takemura ,  Nobutoshi Saito ,  Masaaki Kimura ,  Rei Kiumi

发明人： Fumio Kuriyama ,  Takashi Takemura ,  Nobutoshi Saito ,  Masaaki Kimura ,  Rei Kiumi

IPC分类号： C25D7/00 ,  C25D17/00 ,  C25B9/00

CPC分类号： C25D17/008 ,  C23C18/1628 ,  C25D5/08 ,  C25D7/123 ,  C25D17/001 ,  C25D21/10 ,  H01L21/288 ,  H01L21/2885 ,  H01L24/11 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00

摘要： A plating apparatus for use in forming a plated film in trenches, via holes, or resist openings that are defined in a surface of a semiconductor wafer, and forming bumps to be electrically connected to electrodes of a package, on a surface of a semiconductor wafer. The plating apparatus has a plating tank for holding a plating solution, a holder for holding a workpiece and bringing a surface to be plated of the workpiece into contact with the plating solution in the plating tank, and a ring-shaped nozzle pipe disposed in the plating tank and having a plurality of plating solution injection nozzles for injecting the plating solution to the surface to be plated of the workpiece held by the holder to supply the plating solution into the plating tank.

摘要翻译： 一种电镀装置，用于在半导体晶片的表面中限定的沟槽，通孔或抗蚀剂开口中形成电镀膜，并且在半导体晶片的表面上形成电连接到封装的电极的凸块 。 电镀装置具有用于保持电镀液的镀槽，用于保持工件的保持器，使被加工物的表面与镀槽中的镀液接触，并且设置在该镀槽中的环状喷嘴管 电镀槽，并具有多个电镀液注入喷嘴，用于将电镀液注射到由保持件保持的工件的待镀表面上，以将电镀溶液供应到电镀槽中。

公开(公告)号：US07875158B2

公开(公告)日：2011-01-25

申请号：US10538507

申请日：2004-03-09

申请人： Fumio Kuriyama ,  Takashi Takemura ,  Nobutoshi Saito ,  Masaaki Kimura ,  Rei Kiumi

发明人： Fumio Kuriyama ,  Takashi Takemura ,  Nobutoshi Saito ,  Masaaki Kimura ,  Rei Kiumi

IPC分类号： C25B9/00 ,  C25D17/00

CPC分类号： C25D17/008 ,  C23C18/1628 ,  C25D5/08 ,  C25D7/123 ,  C25D17/001 ,  C25D21/10 ,  H01L21/288 ,  H01L21/2885 ,  H01L24/11 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00

摘要： A plating apparatus for use in forming a plated film in trenches, via holes, or resist openings that are defined in a surface of a semiconductor wafer, and forming bumps to be electrically connected to electrodes of a package, on a surface of a semiconductor wafer. The plating apparatus has a plating tank for holding a plating solution, a holder for holding a workpiece and bringing a surface to be plated of the workpiece into contact with the plating solution in the plating tank, and a ring-shaped nozzle pipe disposed in the plating tank and having a plurality of plating solution injection nozzles for injecting the plating solution to the surface to be plated of the workpiece held by the holder to supply the plating solution into the plating tank.

摘要翻译： 一种电镀装置，用于在半导体晶片的表面中限定的沟槽，通孔或抗蚀剂开口中形成电镀膜，并且在半导体晶片的表面上形成电连接到封装的电极的凸块 。 电镀装置具有用于保持电镀液的镀槽，用于保持工件的保持器，使被加工物的表面与镀槽中的镀液接触，并且设置在该镀槽中的环状喷嘴管 电镀槽，并具有多个电镀液注入喷嘴，用于将电镀液注射到由保持件保持的工件的待镀表面上，以将电镀溶液供应到电镀槽中。

公开(公告)号：US20090218231A1

公开(公告)日：2009-09-03

申请号：US12453347

申请日：2009-05-07

申请人： Toshikazu Yajima ,  Takashi Takemura ,  Rei Kiumi ,  Nobutoshi Saito ,  Fumio Kuriyama ,  Masaaki Kimura

发明人： Toshikazu Yajima ,  Takashi Takemura ,  Rei Kiumi ,  Nobutoshi Saito ,  Fumio Kuriyama ,  Masaaki Kimura

IPC分类号： C25D21/10 ,  C25D5/00

CPC分类号： C25D21/12 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  C25D17/008

摘要： A plating apparatus according to the present invention has a plating tank for holding a plating solution, an anode disposed so as to be immersed in the plating solution in the plating tank, a regulation plate disposed between the anode and a plating workpiece disposed so as to face the anode, and a plating power supply for supply a current between the anode and the plating workpiece to carry out plating. The regulation plate is disposed so as to separate the plating solution held in the plating tank into a plating solution on the anode side and a plating solution on the plating workpiece side, and a through-hole group having a large number of through-holes is formed in the regulation plate.

摘要翻译： 根据本发明的电镀装置具有用于保持电镀液的电镀槽，设置为浸在电镀槽中的电镀液中的阳极，设置在阳极和电镀工件之间的调节板， 面对阳极，以及用于在阳极和电镀工件之间提供电流以进行电镀的电镀电源。 调整板被设置为将保持在电镀槽中的镀液分离成阳极侧的电镀液和电镀工件侧的电镀液，具有多个通孔的通孔组为 形成在调节板上。

公开(公告)号：US20060113185A1

公开(公告)日：2006-06-01

申请号：US10538507

申请日：2004-03-09

申请人： Fumio Kuriyama ,  Takashi Takemura ,  Nobutoshi Saito ,  Masaaki Kimura ,  Rei Kiumi

发明人： Fumio Kuriyama ,  Takashi Takemura ,  Nobutoshi Saito ,  Masaaki Kimura ,  Rei Kiumi

IPC分类号： C25B9/00 ,  C25C7/00

CPC分类号： C25D17/008 ,  C23C18/1628 ,  C25D5/08 ,  C25D7/123 ,  C25D17/001 ,  C25D21/10 ,  H01L21/288 ,  H01L21/2885 ,  H01L24/11 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00

摘要： The present invention is concerned with a plating apparatus for use in forming a plated film in trenches, via holes, or resist openings that are defined in a surface of a semiconductor wafer, and forming bumps to be electrically connected to electrodes of a package, on a surface of a semiconductor wafer. The plating apparatus (170) has a plating tank (186) for holding a plating solution (188), a holder (160) for holding a workpiece (W) and bringing a surface to be plated of the workpiece into contact with the plating solution (188) in the plating tank (186), and a ring-shaped nozzle pipe (220) disposed in the plating tank (186) and having a plurality of plating solution injection nozzles (222) for injecting the plating solution (188) to the surface to be plated of the workpiece held by the holder (160) to supply the plating solution (188) into the plating tank (186).

摘要翻译： 本发明涉及用于在半导体晶片的表面中限定的沟槽，通孔或抗蚀剂开口中形成电镀膜的电镀装置，以及形成电连接到封装的电极的凸块， 半导体晶片的表面。 电镀装置（170）具有用于保持电镀液（188）的电镀槽（186），用于保持工件（W）的保持架（160），使被加工物的表面与电镀液接触 （188）和镀槽（186）中设置的多个电镀液注入喷嘴（222）的环状喷嘴管（220），电镀槽（188）喷射到电镀槽 被保持器（160）保持的工件的待镀表面，以将镀液（188）供应到镀槽（186）中。

公开(公告)号：US07012333B2

公开(公告)日：2006-03-14

申请号：US10743757

申请日：2003-12-24

申请人： Masashi Shimoyama ,  Hiroshi Yokota ,  Rei Kiumi ,  Fumio Kuriyama ,  Nobutoshi Saito

发明人： Masashi Shimoyama ,  Hiroshi Yokota ,  Rei Kiumi ,  Fumio Kuriyama ,  Nobutoshi Saito

IPC分类号： H01L29/40

CPC分类号： H01L24/12 ,  C25D3/60 ,  C25D5/505 ,  C25D21/14 ,  H01L21/2885 ,  H01L21/4853 ,  H01L23/49816 ,  H01L24/11 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/056 ,  H01L2224/11462 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H05K3/3436 ,  H05K3/3463 ,  H01L2924/00014

摘要： The present invention relates to a lead-free bump with suppressed formation of voids, obtained by reflowing a plated film of Sn—Ag solder alloy having an adjusted Ag content, and a method of forming the lead-free bump. The lead-free bump of the present invention is obtained by forming an Sn—Ag alloy film having a lower Ag content than that of an Sn—Ag eutectic composition by plating and reflowing the plated alloy film.

摘要翻译： 本发明涉及通过回流具有调节的Ag含量的Sn-Ag焊料合金的镀膜获得的空隙形成的无铅凸块，以及形成无铅凸块的方法。 本发明的无铅凸点通过电镀和回流镀合金膜而形成具有比Sn-Ag共晶组合物低的Ag含量的Sn-Ag合金膜。

公开(公告)号：US20050279640A1

公开(公告)日：2005-12-22

申请号：US11192013

申请日：2005-07-29

申请人： Masashi Shimoyama ,  Hiroshi Yokota ,  Rei Kiumi ,  Fumio Kuriyama ,  Nobutoshi Saito

发明人： Masashi Shimoyama ,  Hiroshi Yokota ,  Rei Kiumi ,  Fumio Kuriyama ,  Nobutoshi Saito

IPC分类号： C25D3/60 ,  C25D5/50 ,  C25D21/14 ,  H01L21/288 ,  H01L21/48 ,  H01L21/60 ,  H01L23/485 ,  H01L23/498 ,  H05K3/34 ,  C25D17/00

CPC分类号： H01L24/12 ,  C25D3/60 ,  C25D5/505 ,  C25D21/14 ,  H01L21/2885 ,  H01L21/4853 ,  H01L23/49816 ,  H01L24/11 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/056 ,  H01L2224/11462 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H05K3/3436 ,  H05K3/3463 ,  H01L2924/00014

摘要： The present invention relates to a lead-free bump with suppressed formation of voids, obtained by reflowing a plated film of Sn—Ag solder alloy having an adjusted Ag content, and a method of forming the lead-free bump. The lead-free bump of the present invention is obtained by forming an Sn—Ag alloy film having a lower Ag content than that of an Sn—Ag eutectic composition by plating and reflowing the plated alloy film.

摘要翻译： 本发明涉及通过回流具有调节的Ag含量的Sn-Ag焊料合金的镀膜获得的空隙形成的无铅凸块，以及形成无铅凸块的方法。 本发明的无铅凸点通过电镀和回流镀合金膜而形成具有比Sn-Ag共晶组合物低的Ag含量的Sn-Ag合金膜。