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1.发明授权
公开(公告)号：US3639165A
公开(公告)日：1972-02-01
申请号：US3639165D
申请日：1968-06-20
Applicant: GEN ELECTRIC
Inventor： RAIRDEN JOHN R
CPC classification number: C23C14/24 , H01C17/08 , Y10T428/268
Abstract: High resistivity, low temperature coefficient of resistance films are formed by evaporating a molybdenum or tungsten source in a low-pressure atmosphere, e.g. 5 X 10 4 torr, of a nitrogen bearing gas, a carbon bearing gas or an inert gas and depositing a resistor film atop a preferably unheated dielectric substrate.
Abstract translation: 通过在低压气氛中蒸发钼或钨源，形成电阻率较低的电阻薄膜的低温系数。 5×10-4托，氮气承载气体，含碳气体或惰性气体，并且在优选不加热的电介质基底顶上沉积电阻膜。
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2.发明授权Method of forming thin film magnetic memory devices having laminated substrates 失效形成薄膜基片的薄膜磁记忆体器件的方法
公开(公告)号：US3550265A
公开(公告)日：1970-12-29
申请号：US3550265D
申请日：1968-01-10
Applicant: GEN ELECTRIC
Inventor： RAIRDEN JOHN R
CPC classification number: H01F10/06 , Y10S228/903 , Y10S428/928 , Y10T29/49069 , Y10T428/12486
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公开(公告)号：US3537891A
公开(公告)日：1970-11-03
申请号：US3537891D
申请日：1967-09-25
Applicant: GEN ELECTRIC
Inventor： RAIRDEN JOHN R
CPC classification number: C23C14/0021 , H01C17/08
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4.发明授权Thin film resistor-conductor system employing beta-tungsten resistor films 失效薄膜电阻导体系统采用BETA-TUNGSTEN电阻膜
公开(公告)号：US3529350A
公开(公告)日：1970-09-22
申请号：US3529350D
申请日：1968-12-09
Applicant: GEN ELECTRIC
Inventor： RAIRDEN JOHN R
CPC classification number: H01B1/00 , C23C2/02 , C23C14/0021 , C23F1/14 , H01L49/02 , Y10S428/938 , Y10T29/49124 , Y10T428/12396 , Y10T428/12597 , Y10T428/12715 , Y10T428/12722 , Y10T428/12743 , Y10T428/1275 , Y10T428/12889 , Y10T428/1291
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公开(公告)号：US3540926A
公开(公告)日：1970-11-17
申请号：US3540926D
申请日：1968-10-09
Applicant: GEN ELECTRIC
Inventor： RAIRDEN JOHN R
CPC classification number: H01B3/025 , C23C14/0021 , H01L23/291 , H01L2924/0002 , H01L2924/09701 , Y10S148/043 , Y10S148/065 , Y10S148/112 , Y10S148/113 , Y10S148/169 , Y10T29/435 , H01L2924/00
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Patent Agency Ranking
公开(公告)号：US3519481A
公开(公告)日：1970-07-07
申请号：US3519481D
申请日：1966-10-14
Applicant: GEN ELECTRIC
Inventor： JOYNSON REUBEN E , NEUGEBAUER CONSTANTINE A , RAIRDEN JOHN R
CPC classification number: C23C14/027 , H01L39/02 , Y10T29/49014
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7.发明授权
公开(公告)号：US3432416A
公开(公告)日：1969-03-11
申请号：US3432416D
申请日：1966-10-03
Applicant: GEN ELECTRIC
Inventor： RAIRDEN JOHN R , FUREY JAMES T
CPC classification number: H01L39/00 , C23C14/541 , H01J37/34 , Y10S505/816 , Y10T29/49014
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公开(公告)号：US3655544A
公开(公告)日：1972-04-11
申请号：US3655544D
申请日：1970-03-02
Applicant: GEN ELECTRIC
Inventor： RAIRDEN JOHN R
CPC classification number: C23C14/14 , C23C14/0036
Abstract: Low temperature coefficient of resistance, high resistivity films of a refractory metal/refractory metal nitride are formed by sputtering a tungsten or molybdenum cathode in a chamber containing a mixture of an inert gas and nitrogen wherein nitrogen forms between 0.3 and 3.0 percent of the sputtering chamber pressure. The deposited films characteristically are a mixture of the sputtered metal and at least 5 percent by volume of the metal nitride with films having especially superior electrical characteristics containing the metal nitride in concentrations between approximately 40 and 60 percent by volume of the resistor film.
Abstract translation: 通过在包含惰性气体和氮气的混合物的室中溅射钨或钼阴极，形成难熔金属/耐火金属氮化物的低电阻率薄膜，其中氮气形成溅射室的0.3至3.0％ 压力。 沉积膜的特征是溅射金属和至少5体积％的金属氮化物的混合物，其中膜具有特别优异的电特性，其含有浓度在电阻膜的约40至60体积％之间的金属氮化物。
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公开(公告)号：US3504325A
公开(公告)日：1970-03-31
申请号：US3504325D
申请日：1967-10-17
Applicant: GEN ELECTRIC
Inventor： RAIRDEN JOHN R
CPC classification number: C23C14/5806 , C23C14/0021 , C23C14/58 , H01B1/00 , H01C10/00 , H01C17/08
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公开(公告)号：US3493475A
公开(公告)日：1970-02-03
申请号：US3493475D
申请日：1967-02-13
Applicant: GEN ELECTRIC
Inventor： NEUGEBAUER CONSTANTINE A , RAIRDEN JOHN R , JOYNSON REUBEN E
CPC classification number: H01L39/24 , G11C11/44 , Y10S428/93 , Y10S505/818 , Y10S505/82 , Y10S505/856 , Y10S505/882 , Y10S505/917 , Y10T29/49014
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