公开(公告)号：US20160379900A1

公开(公告)日：2016-12-29

申请号：US14753198

申请日：2015-06-29

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Torsten Maehr ,  Martin Freitag ,  Arthur Hotzel

IPC: H01L21/66 ,  C23C16/04 ,  H01L21/67 ,  H01L21/02 ,  H01L21/687

CPC classification number: H01L22/26 ,  C23C16/042 ,  H01L21/02282 ,  H01L21/67051 ,  H01L21/6715 ,  H01L21/67288 ,  H01L21/68714 ,  H01L22/12 ,  H01L22/20

Abstract: A method includes performing a spin coating process. In the spin coating process, a first fluid is dispensed to a surface of a wafer. The method further includes performing an inspection of an edge area of the wafer. On the basis of the inspection of the edge area of the wafer, a defect analysis is performed. In the defect analysis, it is determined if the edge area of the wafer has a defect that is indicative of an insufficient coating of the surface of the wafer by the first fluid.

Abstract translation: 一种方法包括进行旋涂工艺。 在旋涂工艺中，将第一流体分配到晶片的表面。 该方法还包括对晶片的边缘区域进行检查。 在对晶片的边缘区域进行检查的基础上，进行缺陷分析。 在缺陷分析中，确定晶片的边缘区域是否具有指示第一流体对晶片表面的不充分涂层的缺陷。

公开(公告)号：US10161915B2

公开(公告)日：2018-12-25

申请号：US14932372

申请日：2015-11-04

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Remi Riviere ,  Arthur Hotzel

IPC: G01N29/46 ,  G01N29/24 ,  G03F1/62 ,  G03F1/84 ,  G01N29/11 ,  G01N29/34

Abstract: A method and apparatus for detecting changes in the vibrational mode spectra and/or elasticity of a pellicle without reliance upon visual inspection are provided. Embodiments include providing a pellicle, a lower surface of the pellicle attached to a photomask; directing light from a light source onto an upper surface of the pellicle at an angle to the upper surface; causing a deflection of the pellicle concurrently with the light being directed onto the pellicle; detecting light reflected off of the deflected pellicle; and characterizing a vibrational mode of the pellicle based on the detection.

公开(公告)号：US09653367B2

公开(公告)日：2017-05-16

申请号：US14753198

申请日：2015-06-29

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Torsten Maehr ,  Martin Freitag ,  Arthur Hotzel

IPC: H01L21/02 ,  H01L21/67 ,  C23C16/04 ,  H01L21/66 ,  H01L21/687

CPC classification number: H01L22/26 ,  C23C16/042 ,  H01L21/02282 ,  H01L21/67051 ,  H01L21/6715 ,  H01L21/67288 ,  H01L21/68714 ,  H01L22/12 ,  H01L22/20

Abstract: A method includes performing a spin coating process. In the spin coating process, a first fluid is dispensed to a surface of a wafer. The method further includes performing an inspection of an edge area of the wafer. On the basis of the inspection of the edge area of the wafer, a defect analysis is performed. In the defect analysis, it is determined if the edge area of the wafer has a defect that is indicative of an insufficient coating of the surface of the wafer by the first fluid.

公开(公告)号：US09798244B2

公开(公告)日：2017-10-24

申请号：US14943086

申请日：2015-11-17

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Arthur Hotzel ,  Philipp Jaschinsky ,  Remi Riviere ,  Wolfram Grundke

IPC: G03F1/50 ,  G03F1/70 ,  G03F7/20

CPC classification number: G03F7/70325 ,  G03F1/36 ,  G03F1/50 ,  G03F1/70

Abstract: Methods, apparatus, and system for minimizing defectivity in top-coat-free immersion photolithography are provided. Embodiments include forming a photomask by defining a first pattern including a main functional pattern in the photomask; and defining a second pattern including a sub-resolution fill pattern in the photomask in areas between or and/or within structures of the first pattern, the fill pattern having a pitch or range of pitches smaller than a minimum resolved pitch of the lithographic exposure and/or at least a part of the sub-resolution structures of the sub-resolution fill pattern not substantially modifying an imaging of any structure of the main functional pattern in the lithographic exposure.

公开(公告)号：US09005882B2

公开(公告)日：2015-04-14

申请号：US14275688

申请日：2014-05-12

Applicant: GlobalFoundries Inc.

Inventor： Arthur Hotzel

IPC: G03F7/20 ,  G03F7/40 ,  G03F1/24 ,  G03F1/72 ,  G03F1/84

CPC classification number: G03F7/40 ,  G03F1/24 ,  G03F1/72 ,  G03F1/84 ,  G03F7/70283 ,  G03F7/7045 ,  G03F7/70466 ,  G03F7/7065

Abstract: Correction of reticle defects, such as EUV reticle defects, is accomplished with a second exposure. Embodiments include obtaining a reticle with a first pattern corresponding to a design for a wafer pattern, detecting dark defects and/or design/OPC weak spots in the first pattern, exposing a resist covered wafer using the reticle, and exposing the wafer using a second reticle with a second pattern or a second image field with openings corresponding to the dark defects, with a repair pattern on the reticle or on another reticle, or with a programmed e-beam or laser writer.

Abstract translation: 修正掩模版缺陷，例如EUV掩模版缺陷，是通过第二次曝光来完成的。 实施例包括获得具有对应于晶片图案的设计的第一图案的掩模版，检测第一图案中的暗缺陷和/或设计/ OPC弱点，使用掩模版曝光抗蚀剂覆盖的晶片，以及使用第二图案曝光晶片 具有第二图案的掩模版或具有对应于暗缺陷的开口的第二图像场，在掩模版或另一掩模版上具有修复图案，或者与编程的电子束或激光写入器。