摘要:
Apparatus for the processing of materials involving placing a material either placed between an radio-frequency electrode and a ground electrode, or which is itself one of the electrodes. This is done in atmospheric pressure conditions. The apparatus effectively etches or cleans substrates, such as silicon wafers, or provides cleaning of spools and drums, and uses a gas containing an inert gas and a chemically reactive gas.
摘要:
The present invention enables the production of stable, steady state, non-thermal atmospheric pressure rf capacitive α-mode plasmas using gases other than helium and neon. In particular, the current invention generates and maintains stable, steady-state, non-thermal atmospheric pressure rf α-mode plasmas using pure argon or argon with reactive gas mixtures, pure oxygen or air. By replacing rare and expensive helium with more readily available gases, this invention makes it more economical to use atmospheric pressure rf α-mode plasmas for various materials processing applications.
摘要:
Apparatus for the processing of materials involving placing a material either placed between an radio-frequency electrode and a ground electrode, or which is itself one of the electrodes. This is done in atmospheric pressure conditions. The apparatus effectively etches or cleans substrates, such as silicon wafers, or provides cleaning of spools and drums, and uses a gas containing an inert gas and a chemically reactive gas.
摘要:
Apparatus for the processing of materials involving placing a material either placed between an radio-frequency electrode and a ground electrode, or which is itself one of the electrodes. This is done in atmospheric pressure conditions. The apparatus effectively etches or cleans substrates, such as silicon wafers, or provides cleaning of spools and drums, and uses a gas containing an inert gas and a chemically reactive gas.
摘要:
A filter for a plasma display includes an electromagnetic interference shielding mesh formed on a substrate to shield electromagnetic waves and a hard coating layer made of inorganic material formed on the electromagnetic interference shielding mesh. The filter is fabricated so as to provide a reduced thickness of a plasma display, to prevent cracks from being generated on surfaces of the mesh and to reduce manufacturing costs.
摘要:
Disclosed herein is an apparatus for generating a spinning cold plasma. A preferred embodiment of the spinning cold plasma apparatus is portable and includes a vortex tube having an inner wall to form a vortex reaction chamber. The vortex tube preferably has a cold gas outlet formed at a first end of the vortex tube and a hot gas outlet formed at a second end of the vortex tube. The vortex tube preferably has a plurality of gas inlet openings formed therein for directing pressurized gas tangentially to the inner wall into the vortex reaction chamber. A preferred embodiment of the portable spinning cold plasma apparatus also includes a valve positioned at least partially within the cold gas outlet and a valve positioned at least partially within the hot gas outlet. The portable device preferably also includes an ionizing device, such as an RF source or microwave source, for transmitting electromagnetic energy into the vortex reaction chamber to ionize pressurized gas therein. Additional apparatus and methods are also disclosed herein.
摘要:
Provided is a polypropylene carbonate (hereinafter, PPC) paint composition, and more particularly, a pre-coated metal (PCM) paint composition for coil coating, which is mainly applied to cases for home appliances requiring high hardness, such as cases of a refrigerator. The composition can be used to provide a PCM paint, which has very low smoke density at the time of burning and emits remarkably low amounts of combustion gas and poisonous gas due to combustion at the time of firing, as compared with the existing laminate steel plate and a high-gloss film. In addition, the composition exhibits excellent adhesion to metal materials and excellent durability so that it can be usefully used for a PCM print steel plate applied to home appliances.
摘要:
An apparatus and method for a beam target fusion neutron generator comprising a closed cycle flow generator having a continuous liquid phase flowing stream liquid target containing hydrogen isotopes where said stream has a continuously refreshed exposed surface and where said liquid target is high vacuum compatible at cryogenic temperatures; and an ion beam generator adapted to produce an ion beam and focused to direct said beam to bombard said flowing stream liquid target. The flowing stream liquid target can be a thin film curtain and said closed cycle flow generator can be a cryogenic liquid handling system having a heat exchanger adapted to maintain said liquid target at cryogenic temperatures and having a collection reservoir position to capture use target material for recycling.
摘要:
A pulsed radio frequency inductive plasma source and method are provided. The source may generate plasma at gas pressures from 1 torr to 2000 torr. By utilizing high power RF generation from fast solid state switches such as Insulated-Gate Bipolar Transistor (IGBT) combined with the resonance circuit, large inductive voltages can be applied to RF antennas to allow rapid gas breakdown from 1-100 μs. After initial breakdown, the same set of switches or an additional rf pulsed power systems are utilized to deliver large amount of rf power, between 10 kW to 10 MW, to the plasmas during the pulse duration of 10 μs-10 ms. In addition, several methods and apparatus for controlling the pulse power delivery, timing gas and materials supply, constructing reactor and substrate structure, and operating pumping system and plasma activated reactive materials delivery system will be disclosed. When combined with the pulsed plasma generation, these apparatuses and the methods can greatly improve the applicability and the efficacy of the industrial plasma processing.
摘要:
A method of fabricating a semiconductor device is provided as follows. A source/drain pattern is formed on a substrate. The source/drain pattern contains silicon atoms and germanium atoms. At least one germanium atom is removed from the germanium atoms of the source/drain pattern.