摘要:
In a multi-layer substrate module receiving from an external earth node (20) supply of a reference potential (Vss) for grounding, a plurality of ground lines (170-1, 170-2, 170-3) are provided respectively corresponding to a plurality of internal circuits (210, 220, 230). Moreover, a common node (Ncmn) for coupling the ground lines (170-1, 170-2, 170-3) is provided in an insulating layer (105C) of the multi-layer substrate module. The common node (Ncmn) is electrically coupled to the earth node 20 through a ground pin terminal 204 shared by the plurality of internal circuits (210, 220, 230). Preferably, the common node (Ncmn) is provided in the lowest insulating layer of the multi-layer substrate module. Thus, parasitic inductance of the portion through which an earth current flows, that is, the portion common to the plurality of internal circuits (210, 220, 230), can be suppressed with a small number of ground pin terminals. Accordingly, the inflow phenomenon of the earth current between the plurality of internal circuits (210, 220, 230) is prevented, enabling stable operation.
摘要:
In a multi-layer substrate module receiving from an external earth node supply of a reference potential for grounding, a plurality of ground lines are provided respectively corresponding to a plurality of internal circuits. Moreover, a common node for coupling the ground lines is provided in an insulating layer of the multi-layer substrate module. The common node is electrically coupled to the earth node through a ground pin terminal shared by the plurality of internal circuits. Preferably, the common node is provided in the lowest insulating layer of the multi-layer substrate module. Thus, parasitic inductance of the portion through which an earth current flows, that is, the portion common to the plurality of internal circuits, can be suppressed with a small number of ground pin terminals. Accordingly, the inflow phenomenon of the earth current between the plurality of internal circuits is prevented, enabling stable operation.
摘要:
Semiconductor circuitry comprises a transistor pair (11, 12) consists of a transistor having a base electrode to which a first signal is applied, and another transistor having a base electrode to which a signal having a phase opposite to that of the first signal is applied, the collector electrodes of those transistors being connected to each other and the emitter electrodes of the transistors being connected to each other, a third transistor (13) connected between a common emitter of the transistor pair and a ground potential and having a base electrode to which a second signal is applied, an output load (51) connected between a common collector of the transistor pair and a power supply (Vcc), and an output circuit for furnishing a third signal from the common collector of the transistor pair, thereby suppressing generation of any even-order higher harmonic of a local oscillation signal when the semiconductor circuitry operates from a low voltage.
摘要:
A high frequency amplifier in which a common emitter bipolar transistor is used, and in that a constant current source and a constant voltage source are switched to apply a DC bias to a base terminal of the bipolar transistor in accordance with a power level of a high frequency signal input to the bipolar transistor or a power level of a high frequency signal output therefrom, and a frequency mixer in that a DC bias is applied to a base of at least one of a bipolar transistor for the input of a high frequency signal and a bipolar transistor for the input of a local oscillation wave by using a configuration for applying the DC bias to a base of an amplifying bipolar transistor employed in the high frequency amplifier.
摘要:
A non-linearity compensating circuit for a high frequency amplifier includes a first divider for dividing a high frequency input signal into two signals, a distortion generating amplifier for non-linearly amplifying the first output of the first divider, a linear amplifier for linearly amplifying the second output from the first divider, a second divider for dividing the output of the linear amplifier into first and second signals, a first combiner for combining the output of the distortion generating amplifier with the first signal to extract the distortion component of the distortion generating amplifier, and a second combiner for combining the second signal with the distortion component.
摘要:
A field effect transistor amplifer has a high gain in a plurality of microwave frequency bands. In a field effect transistor with the gate terminal and the drain terminal thereof connected to a matching circuit on the input side and a matching circuit on the output side, respectively, a resonance circuit which is composed of a series circuit including at least one second inductor and a capacitor and connected in parallel to a resistor, is connected between at least one of the gate terminal of the field effect transistor and the ground and between the drain terminal of the field effect transistor and the ground. When a series circuit including the first inductor, at least one second inductor and the capacitor is resonated and short-circuited, the gain at the resonance frequency is dropped and a gain in the range outside of the desired bands is suppressed. When a series circuit including at least one second inductor and the capacitor and connected to the resistor is resonated and short-circuited, the drop of the gain at the resonance frequency due to the resistor is suppressed. This thereby enables high gains to be obtained in the desired bands.
摘要:
A linear amplifier includes a variable attenuator and a phase shifter for modifying the amplitude and phase of an input signal to compensate for amplitude and phase distortion caused by non-linear characteristics of a high-powered amplifier utilized in a microwave band communications system. An amplitude comparator and a phase comparator compare the amplitudes and phases of input and output signals of the linear amplifier circuit to develop control signals for controlling the operation of the variable attenuator and phase shifter. The elimination of digital signal processing circuitry allows increased speed of operation that is essential for use in the microwave bands.
摘要:
In a modulation system using an amplitude and a phase of a carrier wave as information such as a QPSK system, a modulation device modifies an input signal series to compensate the nonlinear characteristics of an amplifier located at a later stage, and provides a carrier wave modulated by the modified signal series to the amplifier. A first arithmetic circuit obtains an amplitude and a phase of an input signal by calculation. A ROM is set with correction data corresponding to the calculated amplitude so as to compensate the nonlinearity of the amplifier. A modification value generating circuit and a RAM output an amount of compensation so as to further modify the correction data according to part of an output signal from the amplifier to compensate amplifier characteristic changes due to temperature variations and the like. A second arithmetic circuit provides a signal series produced from the modified amplitude and phase to a quadrature modulator.
摘要:
An amplifier circuit suitable for use in various types of communication devices, radar systems and the like, wherein a fundamental-wave signal extracted from an input side is converted into a second order signal and the second order signal is shifted so as to be opposite in phase and equal in amplitude to a second order signal produced by an amplifier such as an FET or multistage operational amplifier. The phase shifted signal is applied to the amplifier output, whereby the second order signal produced by the amplifier can assuredly be equivalently short-circuited and the operation efficiency of the amplifier can be improved.
摘要:
A low-distortion radio-frequency amplifying apparatus is equipped with a distortion compensating circuit for generating a distortion signal which cancels a distortion generated during radio-frequency amplification. The apparatus detects a signal corresponding to an envelope power of the output or input of an amplifier, varies a distortion compensating characteristic according to the power value, and compensates a distortion over a wide dynamic range. The apparatus includes a detector for detecting an envelope detection signal of the amplifier, and a controller for compensating the distortion compensating characteristic according to the detected signal.