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公开(公告)号：US20180006000A1
公开(公告)日：2018-01-04
申请号：US15688844
申请日：2017-08-28
Applicant: Genesis Photonics Inc.
Inventor： Cheng-Yen Chen , Yun-Li Li , Po-Jen Su
IPC: H01L25/075 , H01L23/00 , H01L33/62 , H01L27/15
CPC classification number: H01L25/0753 , H01L24/14 , H01L25/04 , H01L25/042 , H01L25/0655 , H01L25/072 , H01L25/0756 , H01L25/112 , H01L25/115 , H01L25/117 , H01L27/156 , H01L27/3209 , H01L33/62 , H01L2924/12041 , H01L2924/00
Abstract: A light source device including a substrate, a plurality of first light emitting diode (LED) chips, and at least one second LED chip is provided. The substrate has an upper surface. The plurality of first LED chips are disposed on the upper surface and electrically connected to the substrate. Each of the first LED chips includes a first chip substrate, a first semiconductor layer, and a plurality of first electrodes, and the first electrodes are disposed on the upper surface of the substrate. The second LED chip is disposed on the upper surface and electrically connected to the substrate. The second LED chip includes a second chip substrate, a second semiconductor layer, and a plurality of second electrodes. A thickness of the second chip substrate is different from than a thickness of the first chip substrate, and the second electrodes are disposed on the upper surface of the substrate.
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公开(公告)号：US20160190390A1
公开(公告)日：2016-06-30
申请号：US15064578
申请日：2016-03-08
Applicant: Genesis Photonics Inc.
Inventor： Yun-Li Li , Jing-En Huang , Shao-Ying Ting , Chih-Ling Wu , Yi-Ru Huang , Yu-Yun Lo
IPC: H01L33/22
Abstract: A light emitting diode structure includes a substrate and a light emitting unit. The substrate has a protrusion portion and a light guiding portion. The protrusion portion and the light guiding portion have a seamless connection therebetween, and a horizontal projection area of the protrusion portion is smaller than that of the light guiding portion. The light emitting unit is disposed on the protrusion portion of the substrate. The light emitting unit is adapted to emit a light beam, and a portion of the light beam enters the light guiding portion from the protrusion portion and emits from an upper surface of the light guiding portion uncovered by the protrusion portion.
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公开(公告)号：US20160049555A1
公开(公告)日：2016-02-18
申请号：US14918580
申请日：2015-10-21
Applicant: Genesis Photonics Inc.
Inventor： Yu-Yun Lo , Yi-Ru Huang , Chih-Ling Wu , Tzu-Yang Lin , Yun-Li Li
CPC classification number: H01L33/42 , H01L33/38 , H01L33/405 , H01L33/46 , H01L2224/14 , H01L2933/0016
Abstract: The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly. Thereby, the reflection layer can have the effect of mirror reflection and the scattering phenomenon on the reflected light can be reduced as well.
Abstract translation: 本发明涉及发光二极管（LED）和倒装芯片封装的LED器件。 本发明提供一种LED装置。 LED装置被翻转并与封装基板电连接，从而形成倒装芯片封装的LED器件。 LED装置主要在第二种掺杂层和反射层之间具有欧姆接触层和平坦化缓冲层。 欧姆接触层改善了第二型掺杂层和反射层之间的欧姆接触特性，而不影响LED器件和倒装芯片封装的LED器件的发光效率。 设置在欧姆接触层和反射层之间的平坦化缓冲层id，用于使欧姆接触层平滑，从而使反射层平滑地粘附到平坦化缓冲层。 因此，反射层可以具有镜面反射的效果，并且也可以减小反射光上的散射现象。
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公开(公告)号：US09229065B2
公开(公告)日：2016-01-05
申请号：US13836181
申请日：2013-03-15
Applicant: GENESIS PHOTONICS INC
Inventor： Tai-Wei Wu , Tai-Cheng Tsai , Hsin-Hung Lin , Ping-Tsung Tsai , Pei-Yi Huang , Gwo-Jiun Sheu , Shou-Wen Hsu , Yun-Li Li
CPC classification number: G01R31/44 , G01J2001/4252 , G01R31/2635
Abstract: A detection apparatus for light-emitting diode chip comprising a substrate with the function of photoelectric conversion and a probing device is disclosed. The substrate is designed to bear at least one light-emitting diode chip. The probing device comprises a power supply and at least two conductive elements. The two ends of the conductive elements are respectively electrically connected to the light-emitting diode chip and the power supply to enable the light-emitting diode chip to emit light beams. Some of the light beams are emitted from the light-emitting diode chip toward the substrate such that the light beams emitted by the light-emitting diode chip are converted into an electric signal by the substrate.
Abstract translation: 公开了一种包括具有光电转换功能的基板和探测装置的发光二极管芯片的检测装置。 基板被设计成承载至少一个发光二极管芯片。 探测装置包括电源和至少两个导电元件。 导电元件的两端分别电连接到发光二极管芯片和电源，以使得发光二极管芯片能够发射光束。 一些光束从发光二极管芯片朝向基板发射，使得由发光二极管芯片发射的光束被基板转换成电信号。
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公开(公告)号：US10224315B2
公开(公告)日：2019-03-05
申请号：US15688844
申请日：2017-08-28
Applicant: Genesis Photonics Inc.
Inventor： Cheng-Yen Chen , Yun-Li Li , Po-Jen Su
IPC: H01L25/07 , H01L25/04 , H01L25/11 , H01L33/62 , H01L27/32 , H01L25/075 , H01L23/00 , H01L27/15 , H01L25/065
Abstract: A light source device including a substrate, a plurality of first light emitting diode (LED) chips, and at least one second LED chip is provided. The substrate has an upper surface. The plurality of first LED chips are disposed on the upper surface and electrically connected to the substrate. Each of the first LED chips includes a first chip substrate, a first semiconductor layer, and a plurality of first electrodes, and the first electrodes are disposed on the upper surface of the substrate. The second LED chip is disposed on the upper surface and electrically connected to the substrate. The second LED chip includes a second chip substrate, a second semiconductor layer, and a plurality of second electrodes. A thickness of the second chip substrate is different from than a thickness of the first chip substrate, and the second electrodes are disposed on the upper surface of the substrate.
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Patent Agency Ranking
6.发明授权公开(公告)号：US09274164B2
公开(公告)日：2016-03-01
申请号：US13836762
申请日：2013-03-15
Applicant: GENESIS PHOTONICS INC
Inventor： Tai-Wei Wu , Tai-Cheng Tsai , Gwo-Jiun Sheu , Shou-Wen Hsu , Yun-Li Li
CPC classification number: G01R31/2635 , G01J1/0411 , G01J2001/4247 , G01R1/04 , G01R1/073 , G01R31/44 , G02B3/00 , H01L33/00
Abstract: A detection apparatus for light-emitting diode chips comprises a transparent chuck with the light-concentration capability, a probing device and a light-sensing device. The transparent chuck comprises a light-incident plane and a light-emitting plane. The light-incident plane is used to bear a plurality of light-emitting diode chips under detection. The probing device comprises two probe pins and a power supply. The two ends of each probe pin is electrically connected to one of the light-emitting diode chips and the power supply, respectively, to make the light-emitting diode chip emit a plurality of light beams. The light beams penetrate through the transparent chuck by emitting into the incident plane of the transparent chuck. The light-sensing device is disposed on one side of the light-emitting plane of the transparent chuck to receive the light beams which penetrate through the transparent chuck.
Abstract translation: 用于发光二极管芯片的检测装置包括具有光集中能力的透明卡盘，探测装置和光感测装置。 透明卡盘包括光入射面和发光面。 光入射面用于承受检测下的多个发光二极管芯片。 探测装置包括两个探针和电源。 每个探针的两端分别电连接到发光二极管芯片和电源之一，以使发光二极管芯片发射多个光束。 光束穿过透明卡盘通过发射到透明卡盘的入射平面中。 光感测装置设置在透明卡盘的发光平面的一侧，以容纳透过透明卡盘的光束。
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公开(公告)号：US20160043281A1
公开(公告)日：2016-02-11
申请号：US14919693
申请日：2015-10-21
Applicant: Genesis Photonics Inc.
Inventor： Yu-Yun Lo , Yi-Ru Huang , Chih-Ling Wu , Tzu-Yang Lin , Yun-Li Li
CPC classification number: H01L33/42 , H01L33/38 , H01L33/405 , H01L33/46 , H01L2224/14 , H01L2933/0016
Abstract: The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly. Thereby, the reflection layer can have the effect of mirror reflection and the scattering phenomenon on the reflected light can be reduced as well.
Abstract translation: 本发明涉及发光二极管（LED）和倒装芯片封装的LED器件。 本发明提供一种LED装置。 LED装置被翻转并与封装基板电连接，从而形成倒装芯片封装的LED器件。 LED装置主要在第二种掺杂层和反射层之间具有欧姆接触层和平坦化缓冲层。 欧姆接触层改善了第二型掺杂层和反射层之间的欧姆接触特性，而不影响LED器件和倒装芯片封装的LED器件的发光效率。 设置在欧姆接触层和反射层之间的平坦化缓冲层id，用于使欧姆接触层平滑，从而使反射层平滑地粘附到平坦化缓冲层。 因此，反射层可以具有镜面反射的效果，并且也可以减小反射光上的散射现象。
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公开(公告)号：US20160043062A1
公开(公告)日：2016-02-11
申请号：US14886110
申请日：2015-10-19
Applicant: Genesis Photonics Inc.
Inventor： Cheng-Yen Chen , Yun-Li Li , Po-Jen Su
IPC: H01L25/075 , H01L33/62
CPC classification number: H01L25/0753 , H01L24/14 , H01L27/156 , H01L33/62 , H01L2924/12041 , H01L2924/00
Abstract: A light source device including a substrate, a plurality of first light emitting diode (LED) chips, and at least one second LED chip is provided. The substrate has an upper surface. The plurality of first LED chips are disposed on the upper surface and electrically connected to the substrate. Each of the first LED chips includes a first chip substrate, a first semiconductor layer, and a plurality of first electrodes, and the first electrodes are disposed on the upper surface of the substrate. The second LED chip is disposed on the upper surface and electrically connected to the substrate. The second LED chip includes a second chip substrate, a second semiconductor layer, and a plurality of second electrodes. A thickness of the second chip substrate is different from than a thickness of the first chip substrate, and the second electrodes are disposed on the upper surface of the substrate.
Abstract translation: 提供了包括基板，多个第一发光二极管（LED）芯片和至少一个第二LED芯片的光源装置。 基板具有上表面。 多个第一LED芯片设置在上表面上并电连接到基板。 每个第一LED芯片包括第一芯片基板，第一半导体层和多个第一电极，并且第一电极设置在基板的上表面上。 第二LED芯片设置在上表面上并电连接到基板。 第二LED芯片包括第二芯片基板，第二半导体层和多个第二电极。 第二芯片基板的厚度与第一芯片基板的厚度不同，第二电极设置在基板的上表面。
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公开(公告)号：US20150102379A1
公开(公告)日：2015-04-16
申请号：US14513228
申请日：2014-10-14
Applicant: Genesis Photonics Inc.
Inventor： Yun-Li Li , Jing-En Huang , Shao-Ying Ting , Chih-Ling Wu , Yi-Ru Huang , Yu-Yun Lo
Abstract: A light emitting diode structure includes a substrate and a light emitting unit. The substrate has a protrusion portion and a light guiding portion. The protrusion portion and the light guiding portion have a seamless connection therebetween, and a horizontal projection area of the protrusion portion is smaller than that of the light guiding portion. The light emitting unit is disposed on the protrusion portion of the substrate. The light emitting unit is adapted to emit a light beam, and a portion of the light beam enters the light guiding portion from the protrusion portion and emits from an upper surface of the light guiding portion uncovered by the protrusion portion.
Abstract translation: 发光二极管结构包括基板和发光单元。 基板具有突出部和导光部。 突出部和导光部之间具有无缝连接，突出部的水平投影面积小于导光部的水平投影面积。 发光单元设置在基板的突出部分上。 发光单元适于发射光束，并且光束的一部分从突出部分进入导光部分，并且从未被突出部分覆盖的导光部分的上表面发射。
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公开(公告)号：US20170084791A1
公开(公告)日：2017-03-23
申请号：US15365918
申请日：2016-11-30
Applicant: Genesis Photonics Inc.
Inventor： Yu-Yun Lo , Yi-Ru Huang , Chih-Ling Wu , Tzu-Yang Lin , Yun-Li Li
CPC classification number: H01L33/42 , H01L33/38 , H01L33/405 , H01L33/46 , H01L2224/14 , H01L2933/0016
Abstract: The present invention relates to a light emitting diode (LED) and a flip-chip packaged LED device. The present invention provides an LED device. The LED device is flipped on and connected electrically with a packaging substrate and thus forming the flip-chip packaged LED device. The LED device mainly has an Ohmic-contact layer and a planarized buffer layer between a second-type doping layer and a reflection layer. The Ohmic-contact layer improves the Ohmic-contact characteristics between the second-type doping layer and the reflection layer without affecting the light emitting efficiency of the LED device and the flip-chip packaged LED device. The planarized buffer layer id disposed between the Ohmic-contact layer and the reflection layer for smoothening the Ohmic-contact layer and hence enabling the reflection layer to adhere to the planarized buffer layer smoothly. Thereby, the reflection layer can have the effect of mirror reflection and the scattering phenomenon on the reflected light can be reduced as well.
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