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    High voltage resistant edge structure for semiconductor components
    1.
    发明授权
    High voltage resistant edge structure for semiconductor components 有权
    半导体元件耐高压边缘结构

    公开(公告)号：US06870201B1

    公开(公告)日：2005-03-22

    申请号：US09530553

    申请日：1998-11-02

    申请人： Gerald Deboy ,  Jenoe Tihanyi ,  Helmut Strack ,  Helmut Gassel ,  Jens-Peer Stengl ,  Hans Weber

    发明人： Gerald Deboy ,  Jenoe Tihanyi ,  Helmut Strack ,  Helmut Gassel ,  Jens-Peer Stengl ,  Hans Weber

    IPC分类号： H01L29/06 ,  H01L29/417 ,  H01L29/739 ,  H01L29/78 ,  H01L29/74

    CPC分类号： H01L29/7811 ,  H01L29/0634 ,  H01L29/41766 ,  H01L29/7395 ,  H01L29/7396 ,  H01L29/7802

    摘要： The invention relates to a high voltage resistant edge structure in the edge region of a semiconductor component which has floating guard rings of the first conductivity type and inter-ring zones of the second conductivity type which are arranged between the floating guard rings, wherein the conductivities and/or the inter-ring zones are set such that their charge carriers are totally depleted when blocking voltage is applied. The inventive edge structure achieves a modulation of the electrical field both at the surface and in the volume of the semiconductor body. If the inventive edge structure is suitably dimensioned, the field intensity maximum can easily be situated in the depth; that is, in the region of the vertical p-n junction. Thus, a suitable edge construction which permits a “soft” leakage of the electrical field in the volume can always be provided over a wide range of concentrations of p and n doping.

    摘要翻译： 本发明涉及一种半导体元件的边缘区域中的耐高压边缘结构，其具有布置在浮动保护环之间的第一导电类型的浮动保护环和第二导电类型的环形区，其中电导率 和/或环形区域被设置为使得当施加阻断电压时它们的电荷载流子完全耗尽。 本发明的边缘结构在半导体本体的表面和体积上实现了电场的调制。 如果本发明的边缘结构适当地确定尺寸，则场强度最大值可以容易地位于深度中; 也就是在垂直p-n结的区域。 因此，允许在体积中的电场的“软”泄漏的合适的边缘构造总是可以在宽泛的p和n掺杂浓度范围内提供。

    Field effect controlled semiconductor component
    2.
    发明授权
    Field effect controlled semiconductor component 有权
    场效应控制半导体元件

    公开(公告)号：US06812524B2

    公开(公告)日：2004-11-02

    申请号：US10013999

    申请日：2001-12-11

    申请人： Dirk Ahlers ,  Jens-Peer Stengl ,  Jenoe Tihanyi ,  Hans Weber ,  Gerald Deboy ,  Helmut Strack ,  Armin Willmeroth

    发明人： Dirk Ahlers ,  Jens-Peer Stengl ,  Jenoe Tihanyi ,  Hans Weber ,  Gerald Deboy ,  Helmut Strack ,  Armin Willmeroth

    IPC分类号： H01L2976

    CPC分类号： H01L29/7802 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/7816

    摘要： A semiconductor component includes first and second connection zones formed in a semiconductor body, a channel zone surrounding the second connection zone in the semiconductor body, and a drift path that is formed between the channel zone and the first connection zone and contains a compensation zone. The compensation zone has a complementary conduction type with respect to the drift zone and includes at least two segments. A distance between the two adjacent segments is chosen such that the punch-through voltage between these segments lies in a voltage range that corresponds to the voltage range assumed by the voltage drop across the drift path at currents situated between the rated current and twice the rated current.

    摘要翻译： 半导体部件包括形成在半导体本体中的第一和第二连接区域，围绕半导体主体中的第二连接区域的沟道区域以及形成在沟道区域和第一连接区域之间并且包含补偿区域的漂移路径。 补偿区相对于漂移区具有互补导电类型并且包括至少两个段。 选择两个相邻段之间的距离，使得这些段之间的穿通电压位于对应于位于额定电流和额定电流两倍之间的电流处的漂移路径上的电压降所假定的电压范围的电压范围 当前。

    Semiconductor device and manufacturing method
    6.
    发明授权
    Semiconductor device and manufacturing method 有权
    半导体器件及制造方法

    公开(公告)号：US08421196B2

    公开(公告)日：2013-04-16

    申请号：US12626425

    申请日：2009-11-25

    申请人： Hans Weber ,  Gerald Deboy

    发明人： Hans Weber ,  Gerald Deboy

    IPC分类号： H01L29/06 ,  H01L21/336

    CPC分类号： H01L29/0611 ,  H01L21/20 ,  H01L29/0607 ,  H01L29/0634 ,  H01L29/0657 ,  H01L29/66348 ,  H01L29/7397

    摘要： A semiconductor device includes a drift zone of a first conductivity type formed within a semiconductor body, wherein one side of opposing sides of the drift zone adjoins a first zone within the semiconductor body and the other side adjoins a second zone within the semiconductor body. First semiconductor subzones of a second conductivity type different from the first conductivity type are formed within each of the first and second zones opposing each other along a lateral direction extending parallel to a surface of the semiconductor body. A second semiconductor subzone is formed within each of the first and second zones and between the first semiconductor subzones along the lateral direction. An average concentration of dopants within the second semiconductor subzone along 10% to 90% of an extension of the second semiconductor subzone along a vertical direction perpendicular to the surface is smaller than the average concentration of dopants along a corresponding section of extension within the drift zone.

    摘要翻译： 半导体器件包括形成在半导体本体内的第一导电类型的漂移区，其中漂移区的相对侧的一侧与半导体本体内的第一区相邻，而另一侧邻接半导体内的第二区。 沿着与半导体主体的表面平行延伸的横向方向彼此相对地形成第一和第二区域中的第一导电类型不同于第一导电类型的第一半导体子区。 第二半导体子区域形成在第一和第二区域的每一个中，并且沿着横向形成在第一半导体子区域之间。 第二半导体子区域内的掺杂剂的平均浓度沿着垂直于表面的垂直方向的第二半导体子区域的延伸的10％至90％的平均浓度小于漂移区域内沿着相应的延伸部分的掺杂剂的平均浓度 。

    Semiconductor component with a charge compensation structure and associated fabrication
    8.
    发明授权
    Semiconductor component with a charge compensation structure and associated fabrication 有权
    具有电荷补偿结构和相关制造的半导体元件

    公开(公告)号：US06667514B2

    公开(公告)日：2003-12-23

    申请号：US10190119

    申请日：2002-07-03

    申请人： Dirk Ahlers ,  Gerald Deboy ,  Hans Weber ,  Armin Willmeroth

    发明人： Dirk Ahlers ,  Gerald Deboy ,  Hans Weber ,  Armin Willmeroth

    IPC分类号： H01L2976

    CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/41766

    摘要： A semiconductor component includes a charge compensation structure wherein locations with a maximum local field strength are positioned in a compensation edge region of the charge compensation structure. Thus, an electrical parameter such as the on resistance of the semiconductor component can be substantially improved without influencing or impairing further parameters such as the breakdown voltage and the robustness with respect to TRAPATT oscillations. Methods of fabricating a semiconductor component with a charge compensation structure are also provided.

    摘要翻译： 半导体部件包括电荷补偿结构，其中具有最大局部场强的位置位于电荷补偿结构的补偿边缘区域中。 因此，可以显着地改善诸如半导体部件的导通电阻的电参数，而不影响或削弱诸如击穿电压和相对于TRAPATT振荡的鲁棒性的其它参数。 还提供了制造具有电荷补偿结构的半导体部件的方法。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
    9.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD 有权
    半导体器件和制造方法

    公开(公告)号：US20110121437A1

    公开(公告)日：2011-05-26

    申请号：US12626425

    申请日：2009-11-25

    申请人： Hans Weber ,  Gerald Deboy

    发明人： Hans Weber ,  Gerald Deboy

    IPC分类号： H01L29/06 ,  H01L21/336 ,  H01L21/20

    CPC分类号： H01L29/0611 ,  H01L21/20 ,  H01L29/0607 ,  H01L29/0634 ,  H01L29/0657 ,  H01L29/66348 ,  H01L29/7397

    摘要： A semiconductor device includes a drift zone of a first conductivity type formed within a semiconductor body, wherein one side of opposing sides of the drift zone adjoins a first zone within the semiconductor body and the other side adjoins a second zone within the semiconductor body. First semiconductor subzones of a second conductivity type different from the first conductivity type are formed within each of the first and second zones opposing each other along a lateral direction extending parallel to a surface of the semiconductor body. A second semiconductor subzone is formed within each of the first and second zones and between the first semiconductor subzones along the lateral direction. An average concentration of dopants within the second semiconductor subzone along 10% to 90% of an extension of the second semiconductor subzone along a vertical direction perpendicular to the surface is smaller than the average concentration of dopants along a corresponding section of extension within the drift zone.

    摘要翻译： 半导体器件包括形成在半导体本体内的第一导电类型的漂移区，其中漂移区的相对侧的一侧与半导体本体内的第一区相邻，而另一侧邻接半导体内的第二区。 沿着与半导体主体的表面平行延伸的横向方向彼此相对地形成第一和第二区域中的第一导电类型不同于第一导电类型的第一半导体子区。 第二半导体子区域形成在第一和第二区域的每一个中，并且沿着横向形成在第一半导体子区域之间。 第二半导体子区域内的掺杂剂的平均浓度沿着垂直于表面的垂直方向沿着第二半导体子区域的延伸的10％至90％的平均浓度小于漂移区域内的相应延伸部分的掺杂剂的平均浓度 。