利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

18 条记录 (耗时 0.028 秒)

    Field effect controlled semiconductor component
    1.
    发明授权
    Field effect controlled semiconductor component 有权
    场效应控制半导体元件

    公开(公告)号：US06812524B2

    公开(公告)日：2004-11-02

    申请号：US10013999

    申请日：2001-12-11

    申请人： Dirk Ahlers ,  Jens-Peer Stengl ,  Jenoe Tihanyi ,  Hans Weber ,  Gerald Deboy ,  Helmut Strack ,  Armin Willmeroth

    发明人： Dirk Ahlers ,  Jens-Peer Stengl ,  Jenoe Tihanyi ,  Hans Weber ,  Gerald Deboy ,  Helmut Strack ,  Armin Willmeroth

    IPC分类号： H01L2976

    CPC分类号： H01L29/7802 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/7816

    摘要： A semiconductor component includes first and second connection zones formed in a semiconductor body, a channel zone surrounding the second connection zone in the semiconductor body, and a drift path that is formed between the channel zone and the first connection zone and contains a compensation zone. The compensation zone has a complementary conduction type with respect to the drift zone and includes at least two segments. A distance between the two adjacent segments is chosen such that the punch-through voltage between these segments lies in a voltage range that corresponds to the voltage range assumed by the voltage drop across the drift path at currents situated between the rated current and twice the rated current.

    摘要翻译： 半导体部件包括形成在半导体本体中的第一和第二连接区域，围绕半导体主体中的第二连接区域的沟道区域以及形成在沟道区域和第一连接区域之间并且包含补偿区域的漂移路径。 补偿区相对于漂移区具有互补导电类型并且包括至少两个段。 选择两个相邻段之间的距离，使得这些段之间的穿通电压位于对应于位于额定电流和额定电流两倍之间的电流处的漂移路径上的电压降所假定的电压范围的电压范围 当前。

    High voltage resistant edge structure for semiconductor components
    3.
    发明授权
    High voltage resistant edge structure for semiconductor components 有权
    半导体元件耐高压边缘结构

    公开(公告)号：US06870201B1

    公开(公告)日：2005-03-22

    申请号：US09530553

    申请日：1998-11-02

    申请人： Gerald Deboy ,  Jenoe Tihanyi ,  Helmut Strack ,  Helmut Gassel ,  Jens-Peer Stengl ,  Hans Weber

    发明人： Gerald Deboy ,  Jenoe Tihanyi ,  Helmut Strack ,  Helmut Gassel ,  Jens-Peer Stengl ,  Hans Weber

    IPC分类号： H01L29/06 ,  H01L29/417 ,  H01L29/739 ,  H01L29/78 ,  H01L29/74

    CPC分类号： H01L29/7811 ,  H01L29/0634 ,  H01L29/41766 ,  H01L29/7395 ,  H01L29/7396 ,  H01L29/7802

    摘要： The invention relates to a high voltage resistant edge structure in the edge region of a semiconductor component which has floating guard rings of the first conductivity type and inter-ring zones of the second conductivity type which are arranged between the floating guard rings, wherein the conductivities and/or the inter-ring zones are set such that their charge carriers are totally depleted when blocking voltage is applied. The inventive edge structure achieves a modulation of the electrical field both at the surface and in the volume of the semiconductor body. If the inventive edge structure is suitably dimensioned, the field intensity maximum can easily be situated in the depth; that is, in the region of the vertical p-n junction. Thus, a suitable edge construction which permits a “soft” leakage of the electrical field in the volume can always be provided over a wide range of concentrations of p and n doping.

    摘要翻译： 本发明涉及一种半导体元件的边缘区域中的耐高压边缘结构，其具有布置在浮动保护环之间的第一导电类型的浮动保护环和第二导电类型的环形区，其中电导率 和/或环形区域被设置为使得当施加阻断电压时它们的电荷载流子完全耗尽。 本发明的边缘结构在半导体本体的表面和体积上实现了电场的调制。 如果本发明的边缘结构适当地确定尺寸，则场强度最大值可以容易地位于深度中; 也就是在垂直p-n结的区域。 因此，允许在体积中的电场的“软”泄漏的合适的边缘构造总是可以在宽泛的p和n掺杂浓度范围内提供。

    Power diode structure
    4.
    发明授权
    Power diode structure 有权
    功率二极管结构

    公开(公告)号：US06465863B1

    公开(公告)日：2002-10-15

    申请号：US09701527

    申请日：2000-11-28

    申请人： Gerald Deboy ,  Jens-Peer Stengl

    发明人： Gerald Deboy ,  Jens-Peer Stengl

    IPC分类号： H01L2358

    CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/744 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The invention relates to a power diode structure having improved dynamic characteristics which comprises a semiconductor body of a first conduction type. A semiconductor zone of the other conduction type which is contrary to the first conduction type is embedded in the one surface of said semiconductor body. The power diode also comprises an anode which contacts the semiconductor zone, and has a cathode which contacts the semiconductor body. At least one floating region of the second conduction type is provided in the semiconductor body.

    摘要翻译： 本发明涉及具有改进的动态特性的功率二极管结构，其包括第一导电类型的半导体本体。 与第一导电类型相反的另一导电类型的半导体区域嵌入在所述半导体本体的一个表面中。 功率二极管还包括接触半导体区的阳极，并具有与半导体本体接触的阴极。 在半导体本体中设置有至少一个第二导电类型的浮动区域。

    Semiconductor component which can be controlled by a field effect
    5.
    发明授权
    Semiconductor component which can be controlled by a field effect 有权
    可以通过场效应控制的半导体元件

    公开(公告)号：US06271562B1

    公开(公告)日：2001-08-07

    申请号：US09259636

    申请日：1999-03-01

    申请人： Gerald Deboy ,  Jens-Peer Stengl ,  Jenoe Tihanyi ,  Heimo Graf

    发明人： Gerald Deboy ,  Jens-Peer Stengl ,  Jenoe Tihanyi ,  Heimo Graf

    IPC分类号： H01L2976

    CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7813

    摘要： A power semiconductor component that can be controlled by a field effect has a multiplicity of parallel-connected individual components disposed in cells, the cells are disposed tightly packed on a relatively small space in a cell array. Parallel-connected source zones of the cells have shadowed regions that in each case reduce an effective W/L channel ratio in the cells containing the shadowed regions. The invention has the advantage that because of the provision of the shadowed regions inside the source zones that are preferably undoped or at least doped much weaker than the source zones, the critical regions in the cell array with the highest current density are specifically moderated. Thus the current density in the current-carrying filament of the cell is more homogeneously distributed. This measure renders it possible to reduce the cell grid spacing of the cells in the cell array, or to reduce the forward resistance per unit area, and this leads simultaneously to a reduction in the power loss.

    摘要翻译： 可以通过场效应来控制的功率半导体元件具有设置在单元中的多个并联连接的各个组件，这些单元被紧密地封装在单元阵列的较小空间上。 单元的平行连接的源区具有阴影区域，每个区域在每个情况下降低包含阴影区域的单元格中的有效W / L通道比。 本发明的优点在于，由于在源极区内设置优选未掺杂或至少掺杂得比源极区弱的阴影区域，所以具有最高电流密度的电池阵列中的临界区域被特别缓和。 因此，电池的载流灯丝中的电流密度更均匀分布。 该测量使得可以减小单元阵列中的单元格的单元格间距，或者减小每单位面积的正向电阻，并且这同时导致功率损耗的降低。

    Semiconductor component with a high-voltage endurance edge structure
    6.
    发明授权
    Semiconductor component with a high-voltage endurance edge structure 有权
    具有高耐压边缘结构的半导体元件

    公开(公告)号：US6037631A

    公开(公告)日：2000-03-14

    申请号：US156429

    申请日：1998-09-18

    申请人： Gerald Deboy ,  Helmut Gassel ,  Jens-Peer Stengl

    发明人： Gerald Deboy ,  Helmut Gassel ,  Jens-Peer Stengl

    IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/78 ,  H01L29/94 ,  H01L29/749

    CPC分类号： H01L29/7811 ,  H01L29/0696 ,  H01L29/086 ,  H01L29/0865 ,  H01L29/41766

    摘要： A semiconductor component having a high-voltage endurance edge structure in which a multiplicity of parallel-connected individual components are disposed in a multiplicity of cells of a cell array. In an edge region, the semiconductor component has cells with shaded source zone regions. During commutation of the power semiconductor component, the shaded source zone regions suppress the switching on of a parasitic bipolar transistor caused by the disproportionately large reverse flow current density. Moreover, an edge structure having shaded source zone regions can be produced very easily in technological terms, in particular in the case of self-adjusting processes, and can thus be produced cost-effectively.

    摘要翻译： 一种具有高电压耐久性边缘结构的半导体元件，其中多个并联连接的各个部件被布置在电池阵列的多个单元中。 在边缘区域中，半导体部件具有带有阴影源区域区域的单元。 在功率半导体部件的换向期间，阴影源极区域抑制由不相当大的反向流动电流密度引起的寄生双极晶体管的导通。 此外，具有阴影源区区域的边缘结构可以在技术上非常容易地制造，特别是在自调整过程的情况下，因此可以成本有效地制造。

    Integrated power semiconductor component having a substrate with a protective structure in the substrate
    8.
    发明授权
    Integrated power semiconductor component having a substrate with a protective structure in the substrate 失效
    集成功率半导体元件，其具有在基板中具有保护结构的基板

    公开(公告)号：US5726478A

    公开(公告)日：1998-03-10

    申请号：US769348

    申请日：1996-12-19

    申请人： Josef-Matthias Gantioler ,  Ludwig Leipold ,  Rainald Sander ,  Jens-Peer Stengl ,  Jenoe Tihanyi

    发明人： Josef-Matthias Gantioler ,  Ludwig Leipold ,  Rainald Sander ,  Jens-Peer Stengl ,  Jenoe Tihanyi

    IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/088 ,  H01L23/62

    CPC分类号： H01L27/0251 ,  H01L2924/0002

    摘要： An integrated power semiconductor component includes a substrate of a first conduction type. At least one first region of a second conduction type is embedded in the substrate and at least one second region of the second conduction type is embedded in the substrate. A substrate contact supplies a supply voltage. Contact-making semiconductor components are embedded in the first region and in the second region. At least a portion of the semiconductor components in the first region control at least a portion of the semiconductor components in the second region. A third region of the second conduction type is disposed between the first region and the second region, and the first region and the third region are at different potentials.

    摘要翻译： 集成功率半导体元件包括第一导电类型的衬底。 至少一个第二导电类型的第一区域被嵌入衬底中，并且第二导电类型的至少一个第二区域被嵌入衬底中。 基板触点提供电源电压。 接触半导体部件嵌入在第一区域和第二区域中。 第一区域中的半导体部件的至少一部分控制第二区域中的至少一部分半导体部件。 第二导电类型的第三区域设置在第一区域和第二区域之间，并且第一区域和第三区域处于不同的电位。

    Signal Transmission Arrangement
    9.
    发明申请
    Signal Transmission Arrangement 有权
    信号传输布置

    公开(公告)号：US20110148549A1

    公开(公告)日：2011-06-23

    申请号：US12646731

    申请日：2009-12-23

    申请人： Peter Kanschat ,  Uwe Wahl ,  Marcus Nuebling ,  Jens-Peer Stengl

    发明人： Peter Kanschat ,  Uwe Wahl ,  Marcus Nuebling ,  Jens-Peer Stengl

    IPC分类号： H03H2/00

    CPC分类号： H03H7/004 ,  H01F19/00 ,  H03H7/00

    摘要： A signal transmission arrangement includes input terminals for receiving an input signal and output terminals for providing an output signal. A first transformer has a primary winding and a secondary winding, the primary winding being coupled to the input terminals. A second transformer has a primary winding and a secondary winding, the primary winding being coupled to the secondary winding of the first transformer, and the secondary winding being coupled to the output terminals.

    摘要翻译： 信号传输装置包括用于接收输入信号的输入端和用于提供输出信号的输出端。 第一变压器具有初级绕组和次级绕组，初级绕组耦合到输入端子。 第二变压器具有初级绕组和次级绕组，初级绕组耦合到第一变压器的次级绕组，次级绕组耦合到输出端子。