公开(公告)号：US20110037390A1

公开(公告)日：2011-02-17

申请号：US12805419

申请日：2010-07-30

申请人： Young Kook Ko ,  Sang Hee Park

发明人： Young Kook Ko ,  Sang Hee Park

IPC分类号： H01J61/52

CPC分类号： F21V29/67 ,  F21V13/04 ,  F21V23/04 ,  F21V29/51 ,  F21V29/58 ,  F21V29/59 ,  F21Y2105/10 ,  F21Y2105/12 ,  F21Y2113/13 ,  F21Y2115/10

摘要： A lighting device for providing mixtures of color temperature and intensity of light. The device comprises a case that contains: a multi-chip of light emitting diode (LED) to output mixtures of color temperature and intensity of light, having a plurality of blocks of LEDs each having a predetermined color temperature, the multi-chip LED being mounted on a printed circuit board (PCB); a cooling system attached on the back of the metal PCB, the cooling system using a fluid coolant for radiating heat generated by the multi-chip LED; and a control system electrically connected with the PCB of each block and the cooling system, the control system is adapted to supply power to the multi-chip LED, select the blocks of LEDs to be adjusted, adjust the color temperature and intensity of light of the selected block of LEDs to obtain mixtures of color temperatures and intensity of light.

摘要翻译： 一种用于提供色温和光强的混合物的照明装置。 该装置包括：一个壳体，包括：多个发光二极管（LED）的多芯片，用于输出色温和光强度的混合物，具有多个具有预定色温的LED块，多芯片LED是 安装在印刷电路板（PCB）上; 安装在金属PCB背面的冷却系统，冷却系统使用流体冷却剂来散发由多芯片LED产生的热量; 以及与各个块的PCB和冷却系统电连接的控制系统，所述控制系统适于向所述多芯片LED供电，选择要调节的LED块，调节所述LED的色温和亮度 所选择的LED块以获得色温和光强度的混合。

公开(公告)号：US08476622B2

公开(公告)日：2013-07-02

申请号：US13343384

申请日：2012-01-04

申请人： Sang Hee Park ,  Chi Sun Hwang ,  Byoung Gon Yu

发明人： Sang Hee Park ,  Chi Sun Hwang ,  Byoung Gon Yu

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01L29/20 ,  H01L33/00 ,  H01L29/201

CPC分类号： H01L51/5284 ,  H01L27/1218 ,  H01L27/322 ,  H01L27/326 ,  H01L29/78633 ,  H01L29/7869

摘要： Disclosed are an active matrix organic light emitting diode and a method for manufacturing the same. The active matrix organic light emitting diode includes: a substrate; a black matrix formed above a part of the substrate; at least one thin film transistor formed above the black matrix; a passivation film formed to entirely cover the at least one thin film transistor; a planarizing layer formed above the passivation film; a color filter formed above an upper part of the planarizing layer opposite to the position where the at least one thin film transistor is formed; and an organic light emitting diode formed above the color filter.

摘要翻译： 公开了有源矩阵有机发光二极管及其制造方法。 有源矩阵有机发光二极管包括：基板; 形成在基板的一部分上方的黑色矩阵; 形成在黑矩阵上方的至少一个薄膜晶体管; 形成为完全覆盖所述至少一个薄膜晶体管的钝化膜; 形成在钝化膜上方的平坦化层; 形成在所述平坦化层的与形成有所述至少一个薄膜晶体管的位置相反的上方的滤色器; 以及形成在滤色器上方的有机发光二极管。

公开(公告)号：US08207670B2

公开(公告)日：2012-06-26

申请号：US12453891

申请日：2009-05-26

申请人： Sang Hee Park ,  Deok Young Choi ,  Byung Cheol Lee ,  Hee In Nam ,  Hyun Don Kim

发明人： Sang Hee Park ,  Deok Young Choi ,  Byung Cheol Lee ,  Hee In Nam ,  Hyun Don Kim

IPC分类号： H01J17/49

CPC分类号： H01B1/22

摘要： A paste composition for forming an electrode includes: Component A: a conductive powder; Component B: a glass frit having a transmittance of about 65% or less at a wavelength of 550 nm; Component C: an organic binder; and Component D: a solvent.

摘要翻译： 用于形成电极的糊剂组合物包括：组分A：导电粉末; 成分B：在波长550nm下透射率为约65％以下的玻璃料; 组分C：有机粘合剂; 和组分D：溶剂。

公开(公告)号：US20100156290A1

公开(公告)日：2010-06-24

申请号：US12654289

申请日：2009-12-16

申请人： Yong Hyun Kim ,  Jae Hwan Oh ,  Sang Hee Park ,  Deok Young Choi ,  Hyun Don Kim

发明人： Yong Hyun Kim ,  Jae Hwan Oh ,  Sang Hee Park ,  Deok Young Choi ,  Hyun Don Kim

IPC分类号： H01J17/49 ,  H01B1/12 ,  H01B1/00 ,  H01B1/22 ,  B05D5/12 ,  G03F7/00

CPC分类号： H01B1/22 ,  C03C8/14 ,  C03C8/18 ,  C03C17/04 ,  C09D11/037 ,  C09D11/52 ,  G03F7/0007 ,  G03F7/0047 ,  H01J9/02 ,  H01J2211/225 ,  H01J2211/323

摘要： A paste composition for an electrode, a PDP including the electrode, and associated methods, the paste composition including a conductive material, a black pigment, a glass frit, and an organic binder, wherein the black pigment includes a magnetic black pigment, the magnetic black pigment being included in an amount of about 0.1 to about 20 wt %, based on the total weight of the composition.

摘要翻译： 一种用于电极的糊剂组合物，包括该电极的PDP及其相关方法，该糊料组合物包括导电材料，黑色颜料，玻璃料和有机粘合剂，其中黑色颜料包括磁性黑色颜料， 基于组合物的总重量，黑色颜料的含量为约0.1至约20重量％。

公开(公告)号：US07337089B2

公开(公告)日：2008-02-26

申请号：US11176734

申请日：2005-07-07

申请人： Yong Suk Yang ,  Hye Yong Chu ,  Jeong Ik Lee ,  Ji Young Oh ,  Sang Hee Park ,  Chi Sun Hwang ,  Lee Mi Do ,  Sung Mook Chung ,  Mi Kyung Kim

发明人： Yong Suk Yang ,  Hye Yong Chu ,  Jeong Ik Lee ,  Ji Young Oh ,  Sang Hee Park ,  Chi Sun Hwang ,  Lee Mi Do ,  Sung Mook Chung ,  Mi Kyung Kim

IPC分类号： G06F19/00

CPC分类号： H04N17/04 ,  G02F1/1309 ,  G09G2320/043 ,  G09G2360/145 ,  H05B33/0896

摘要： Provided is an apparatus for measuring a picture and a lifetime of a display panel including: a chamber having at least one display panel for measurement disposed therein, and for uniformly maintaining temperature and humidity conditions of an inner portion; at least one camera installed in the chamber to obtain image signals of the display panel; a bias supply and measurement part for providing pulse bias voltage and current required to measure depending on control signals, and measuring the voltage and current to convert into digital data when the display panel is driven; a converter for converting the image signals obtained through the camera into digital data; and a control and data processing part for generating parameters by receiving the digital data from the bias supply and measurement part and the converter, and analyzing a lifetime of the display panel using the parameters.

摘要翻译： 提供一种用于测量显示面板的图像和寿命的装置，包括：具有至少一个用于测量的显示面板的室，并且用于均匀地保持内部的温度和湿度条件; 至少一个相机安装在所述室中以获得所述显示面板的图像信号; 偏置电源和测量部件，用于提供根据控制信号测量所需的脉冲偏置电压和电流，以及在显示面板驱动时测量电压和电流转换为数字数据; 用于将通过照相机获得的图像信号转换成数字数据的转换器; 以及控制和数据处理部分，用于通过从偏置供应和测量部分和转换器接收数字数据来产生参数，以及使用参数分析显示面板的寿命。

公开(公告)号：US09818889B2

公开(公告)日：2017-11-14

申请号：US14107489

申请日：2013-12-16

申请人： Sang Hee Park ,  Tae Joon Kim ,  Hun Gyu Song

发明人： Sang Hee Park ,  Tae Joon Kim ,  Hun Gyu Song

IPC分类号： C03C8/18 ,  H01B1/16 ,  C03C8/22 ,  H01L31/0224

CPC分类号： H01L31/022425 ,  C03C8/18 ,  C03C8/22 ,  H01B1/16 ,  Y02E10/50

摘要： A composition for solar cell electrodes, a solar cell electrode prepared from the composition, a solar cell, and a method of manufacturing the same, the composition including silver powder; silver iodide; glass frit; and an organic vehicle, wherein the silver iodide is present in an amount of about 0.1 wt % to about 30 wt %, based on a total weight of the composition.

公开(公告)号：US09053937B2

公开(公告)日：2015-06-09

申请号：US13087363

申请日：2011-04-14

申请人： Sang Hee Park ,  Chi Sun Hwang ,  Chun Won Byun ,  Elvira M. C. Fortunato ,  Rodrigo F. P. Martins ,  Ana R. X. Barros ,  Nuno F. O. Correia ,  Pedro M. C. Barquinha ,  Vitor M. L. Figueiredo

发明人： Sang Hee Park ,  Chi Sun Hwang ,  Chun Won Byun ,  Elvira M. C. Fortunato ,  Rodrigo F. P. Martins ,  Ana R. X. Barros ,  Nuno F. O. Correia ,  Pedro M. C. Barquinha ,  Vitor M. L. Figueiredo

IPC分类号： H01L29/22 ,  H01L21/02 ,  C23C14/08 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L29/94 ,  H01L29/66 ,  H01L21/8238 ,  H01L27/092

CPC分类号： H01L21/02565 ,  C23C14/08 ,  C23C14/086 ,  C23C14/087 ,  H01L21/02422 ,  H01L21/02579 ,  H01L21/02617 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/823857 ,  H01L27/092 ,  H01L27/1203 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/94

摘要： Provided is a semiconductor device using a p-type oxide semiconductor layer and a method of manufacturing the same. The device includes the p-type oxide layer formed of at least one oxide selected from the group consisting of a copper(Cu)-containing copper monoxide, a tin(Sn)-containing tin monoxide, a copper tin oxide containing a Cu—Sn alloy, and a nickel tin oxide containing a Ni—Sn alloy. Thus, transparent or opaque devices are easily developed using the p-type oxide layer. Since an oxide layer that is formed using a low-temperature process is applied to a semiconductor device, the manufacturing process of the semiconductor device is simplified and manufacturing costs may be reduced.

摘要翻译： 提供一种使用p型氧化物半导体层的半导体器件及其制造方法。 该装置包括由至少一种氧化物形成的p型氧化物层，所述氧化物选自由含铜（Cu）的一氧化碳，含锡（Sn）的一氧化锡，含有Cu-Sn的铜锡氧化物 合金和含有Ni-Sn合金的镍锡氧化物。 因此，使用p型氧化物层容易显影透明或不透明的装置。 由于使用低温工艺形成的氧化物层被应用于半导体器件，所以可以简化半导体器件的制造工艺，并且可以降低制造成本。

公开(公告)号：US20110266542A1

公开(公告)日：2011-11-03

申请号：US13094933

申请日：2011-04-27

申请人： Min Ki RYU ,  Sang Hee Park ,  Chi Sun Hwang ,  Kyoung Ik Cho

发明人： Min Ki RYU ,  Sang Hee Park ,  Chi Sun Hwang ,  Kyoung Ik Cho

IPC分类号： H01L29/04 ,  H01L21/336

CPC分类号： H01L27/124 ,  H01L27/1225 ,  H01L29/78648

摘要： Provided are a semiconductor device including a dual gate transistor and a method of fabricating the same. The semiconductor device includes a lower gate electrode, an upper gate electrode on the lower gate electrode, a contact plug interposed between the lower gate electrode and the upper gate electrode, and connecting the lower gate electrode to the upper gate electrode, and a functional electrode spaced apart from the upper gate electrode and formed at the same height as the upper gate electrode. The dual gate transistor exhibiting high field effect mobility is applied to the semiconductor device, so that characteristics of the semiconductor device can be improved. In particular, since no additional mask or deposition process is necessary, a large-area high-definition semiconductor device can be mass-produced with neither an increase in process cost nor a decrease in yield.

摘要翻译： 提供一种包括双栅晶体管的半导体器件及其制造方法。 半导体器件包括下栅极电极，下栅电极上的上栅电极，插入在下栅电极和上栅电极之间的接触插塞，并将下栅电极连接到上栅电极，功能电极 与上栅电极间隔开并形成与上栅电极相同的高度。 表现出高场效应迁移率的双栅极晶体管被施加到半导体器件，从而可以提高半导体器件的特性。 特别是，由于不需要附加的掩模或沉积工艺，所以大面积的高分辨率半导体器件既可以增加工艺成本也不会降低产量。

公开(公告)号：US07875559B2

公开(公告)日：2011-01-25

申请号：US11970836

申请日：2008-01-08

申请人： Sang Hee Park ,  Chi Sun Hwang ,  Hye Yong Chu ,  Jeong Ik Lee

发明人： Sang Hee Park ,  Chi Sun Hwang ,  Hye Yong Chu ,  Jeong Ik Lee

IPC分类号： H01L21/00 ,  H01L21/469 ,  H01L21/31

CPC分类号： H01L29/7869 ,  C23C16/308 ,  C23C16/34 ,  C23C16/407 ,  C23C16/45529 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02554 ,  H01L21/02579 ,  H01L21/0262

摘要： Provided are a method of manufacturing a transparent N-doped p-type ZnO semiconductor layer using a surface chemical reaction between precursors containing elements constituting thin layers, and a thin film transistor (TFT) including the p-type ZnO semiconductor layer. The method includes the steps of: preparing a substrate and loading the substrate into a chamber; injecting a Zn precursor and an oxygen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the oxygen precursor using an atomic layer deposition (ALD) technique to form a ZnO thin layer on the substrate; and injecting a Zn precursor and an nitrogen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the nitrogen precursor to form a doping layer on the ZnO thin layer.

摘要翻译： 提供了使用包含构成薄层的元素的前体和包含p型ZnO半导体层的薄膜晶体管（TFT）之间的表面化学反应来制造透明N掺杂p型ZnO半导体层的方法。 该方法包括以下步骤：准备衬底并将衬底装载到腔室中; 将Zn前体和氧前体注入到室中，并且使用原子层沉积（ALD）技术在Zn前体和氧前体之间引起表面化学反应，以在衬底上形成ZnO薄层; 并将Zn前体和氮前体注入到室中，并且使Zn前体和氮前体之间的表面化学反应在ZnO薄层上形成掺杂层。

公开(公告)号：US07794627B2

公开(公告)日：2010-09-14

申请号：US12081565

申请日：2008-04-17

申请人： Sang Hee Park ,  Deok Young Choi ,  Byung Cheol Lee ,  Hee In Nam ,  Hyun Don Kim

发明人： Sang Hee Park ,  Deok Young Choi ,  Byung Cheol Lee ,  Hee In Nam ,  Hyun Don Kim

IPC分类号： H01B1/00

CPC分类号： H01B1/22 ,  H01J9/02 ,  H01J11/12 ,  H01J11/22 ,  H01J2211/225 ,  H01J2211/444

摘要： A paste composition for an electrode includes a conductive material, a colored glass frit, the glass frit exhibiting a blackness (L*) value of about 85 or less, a binder, and a solvent.

摘要翻译： 用于电极的糊剂组合物包括导电材料，着色玻璃料，黑色（L *）值为约85以下的玻璃料，粘合剂和溶剂。