公开(公告)号：US5705443A

公开(公告)日：1998-01-06

申请号：US453339

申请日：1995-05-30

申请人： Gregory Stauf ,  Robin A. Gardiner ,  Peter S. Kirlin ,  Peter C. Van Buskirk

发明人： Gregory Stauf ,  Robin A. Gardiner ,  Peter S. Kirlin ,  Peter C. Van Buskirk

IPC分类号： C23F4/00 ,  H01L21/311 ,  H01L21/3213 ,  C23F1/02

CPC分类号： C23F4/00 ,  H01L21/31116 ,  H01L21/32136

摘要： A plasma-assisted dry etching process for etching of a metal containing material layer on a substrate to remove the metal containing material from the substrate, comprising (i) plasma etching the metal containing material and, (ii) contemporaneously with said plasma etching, contacting the metal containing material with an etch enhancing reactant in a sufficient amount and at a sufficient rate to enhance the etching removal of the metal containing material, in relation to a corresponding plasma etching of the metal containing material layer on the substrate in the absence of the etch enhancing reactant metal material being contacted with the etch enhancing reactant.

摘要翻译： 一种用于在衬底上蚀刻含金属材料层以从衬底去除含金属材料的等离子体辅助干蚀刻工艺，包括（i）等离子体蚀刻含金属材料，和（ii）与所述等离子体蚀刻同时接触 含有金属的材料具有足够的量和足够的速率的蚀刻增强反应物，以增强含金属材料的蚀刻去除，相对于在不存在金属的情况下在衬底上的含金属材料层的相应等离子体蚀刻 蚀刻增强反应物金属材料与蚀刻增强反应物接触。

公开(公告)号：US5536323A

公开(公告)日：1996-07-16

申请号：US280143

申请日：1994-07-25

申请人： Peter S. Kirlin ,  Robin L. Binder ,  Robin A. Gardiner ,  Peter V. Buskirk ,  Jiming Zhang ,  Gregory Stauf

发明人： Peter S. Kirlin ,  Robin L. Binder ,  Robin A. Gardiner ,  Peter V. Buskirk ,  Jiming Zhang ,  Gregory Stauf

IPC分类号： C23C16/18 ,  C23C16/40 ,  C23C16/448 ,  H01L39/24 ,  C23C16/00

CPC分类号： C23C16/4483 ,  C23C16/18 ,  C23C16/40 ,  C23C16/408 ,  C23C16/409 ,  C23C16/4481 ,  C23C16/45561 ,  H01L39/2441 ,  Y10S261/65 ,  Y10S261/88

摘要： A process and apparatus for delivering an involatile reagent in gaseous form, wherein an involatile reagent source liquid is flash vaporized on a vaporization matrix structure at elevated temperature. A carrier gas may be flowed past the flash vaporzation matrix structure to yield a carrier gas mixture containing the flash vaporized source reagent. The matrix structure preferably has a high surface-to-volume ratio, and may sutiably comprise a foraminous matrix element such as screen mesh onto which the reagent source liquid is distributed for flash vaporization. The invention is particularly useful for delivery of Group II reagents and compounds and complexes of early transition metals such as zirconium and hafnium, and may be usefully employed with Group II beta-diketonate source layers, e.g., of YBaCuO, BiSrCaCuO, and TlBaCaCuO types, as well as for forming interlayers of Group II metal fluorides between superconductor or gallium arsenide overlayers, and for depositing thin films of photonic and ferroelectric materials, e.g., BaTiO.sub.3, Ba.sub.x Sr.sub.1-x Nb.sub.2 O.sub.6, and PbZr.sub.1-x Ti.sub.x O.sub.3.

摘要翻译： 一种用于递送气态非挥发性试剂的方法和装置，其中非挥发性试剂源液体在升高的温度下在汽化基质结构上闪蒸。 载气可以流过闪蒸气化基质结构以产生含有闪蒸的源试剂的载气混合物。 基质结构优选具有高的表面体积比，并且可以适当地包含诸如筛网的多孔基质元素，其上分配有试剂源液体用于闪蒸。 本发明特别可用于递送II族试剂和早期过渡金属如锆和铪的化合物和络合物，并且可以有用地用于IIB型β-二酮源层，例如YBaCuO，BiSrCaCuO和TlBaCaCuO类型， 以及用于在超导体或砷化镓覆盖层之间形成第II族金属氟化物的夹层，以及用于沉积光致电子和铁电材料的薄膜，例如BaTiO3，BaxSr1-xNb2O6和PbZr1-xTixO3。

公开(公告)号：US5711816A

公开(公告)日：1998-01-27

申请号：US484025

申请日：1995-06-07

申请人： Peter S. Kirlin ,  Robin L. Binder ,  Robin A. Gardiner ,  Peter Van Buskirk ,  Gregory Stauf ,  Jiming Zhang

发明人： Peter S. Kirlin ,  Robin L. Binder ,  Robin A. Gardiner ,  Peter Van Buskirk ,  Gregory Stauf ,  Jiming Zhang

IPC分类号： C23C16/18 ,  C23C16/40 ,  C23C16/448 ,  H01L39/24 ,  C23C16/00

CPC分类号： C23C16/4483 ,  C23C16/18 ,  C23C16/40 ,  C23C16/408 ,  C23C16/409 ,  C23C16/4481 ,  C23C16/45561 ,  H01L39/2441 ,  Y10S261/65

摘要： A process and apparatus for delivering an involatile reagent in gaseous form, wherein an involatile reagent source liquid is flash vaporized on a vaporization matrix structure at elevated temperature. A carrier gas may be flowed past the flash vaporization matrix structure to yield a carrier gas mixture containing the flash vaporized source reagent. The matrix structure preferably has a high surface-to-volume ratio, and may suitably comprise a foraminous matrix element such as screen mesh onto which the reagent source liquid is distributed for flash vaporization. The invention is particularly useful for delivery of Group II reagents and compounds and complexes of early transition metals such as zirconium and hafnium, and may be usefully employed with Group II beta-diketonate source layers, e.g., of YBaCuO, BiSrCaCuO, and TlBaCaCuO types, as well as for forming interlayers of Group II metal fluorides between superconductor or gallium arsenide overlayers, and for depositing thin films of photonic and ferroelectric materials, e.g., BaTiO.sub.3, Ba.sub.x Sr.sub.1-x Nb.sub.2 O.sub.6, and PbZr.sub.1-x Ti.sub.x O.sub.3.

摘要翻译： 一种用于递送气态非挥发性试剂的方法和装置，其中非挥发性试剂源液体在升高的温度下在汽化基质结构上闪蒸。 载气可以流过闪蒸基质结构以产生含有闪蒸的源试剂的载气混合物。 基体结构优选具有高的表面体积比，并且可以适当地包括诸如筛网的多孔基质元素，其上分配有试剂源液体用于闪蒸。 本发明特别可用于递送II族试剂和早期过渡金属如锆和铪的化合物和络合物，并且可以有用地用于IIB型β-二酮源层，例如YBaCuO，BiSrCaCuO和TlBaCaCuO类型， 以及用于在超导体或砷化镓覆盖层之间形成第II族金属氟化物的夹层，以及用于沉积光致电子和铁电材料的薄膜，例如BaTiO3，BaxSr1-xNb2O6和PbZr1-xTixO3。

公开(公告)号：US20060102895A1

公开(公告)日：2006-05-18

申请号：US11273959

申请日：2005-11-15

申请人： Bryan Hendrix ,  Jeffrey Roeder ,  Thomas Baum ,  Tianniu Chen ,  Chongying Xu ,  Gregory Stauf

发明人： Bryan Hendrix ,  Jeffrey Roeder ,  Thomas Baum ,  Tianniu Chen ,  Chongying Xu ,  Gregory Stauf

IPC分类号： H01L29/08 ,  C07F9/00 ,  C07F17/00 ,  H01L21/469

CPC分类号： H01L21/28556 ,  C07F9/00 ,  C07F9/005 ,  C07F17/00 ,  C23C16/18 ,  C23C16/34 ,  H01L21/28562 ,  H01L21/76843 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Tantalum compositions of Formulae I-V hereof are disclosed, having utility as precursors for forming tantalum-containing films. The tantalum compositions are amenable to usage involving chemical vapor deposition and atomic layer deposition processes, to form semiconductor device structures, including a dielectric layer, a barrier layer overlying the dielectric layer, and copper metallization overlying the barrier layer, wherein the barrier layer includes a Ta-containing layer including sufficient carbon so that the Ta-containing layer is amorphous. In one preferred implementation, the semiconductor device structure is fabricated by depositing the Ta-containing barrier layer, via CVD or ALD, from a precursor including a Ta alkylidene compound, at a temperature below 400° C., in a reducing or inert atmosphere.

摘要翻译： 公开了式I-V的钽组合物，其用作形成含钽膜的前体。 钽组合物适用于涉及化学气相沉积和原子层沉积工艺的用途，以形成半导体器件结构，包括电介质层，覆盖电介质层的阻挡层和覆盖在阻挡层上的铜金属化物，其中阻挡层包括 含有Ta的层包含足够的碳，使得含Ta层是无定形的。 在一个优选实施方案中，半导体器件结构通过在还原或惰性气氛中在低于400℃的温度下从含有Ta亚烷基化合物的前体经CVD或ALD沉积含Ta阻挡层来制造。

公开(公告)号：US5948322A

公开(公告)日：1999-09-07

申请号：US838587

申请日：1997-04-10

申请人： Thomas H. Baum ,  Gregory Stauf ,  Daniel B. Studebaker ,  Brian A. Vaartstra

发明人： Thomas H. Baum ,  Gregory Stauf ,  Daniel B. Studebaker ,  Brian A. Vaartstra

IPC分类号： G02F1/355 ,  G02F1/35 ,  G02B5/20

CPC分类号： G02F1/3551

摘要： An MOCVD precursor composition useful for MOCVD formation of a non-linear optically active metal borate thin film, comprising: (I) an organometallic source reagent for a metal reactively forming a non-linear optically active metal borate, and (II) an organoborate compound of the formula: B(OR).sub.3, wherein each R is independently selected from H, alkyl, aryl, alkaryl, arylalkyl, alkenyl, fluoroalkyl, fluoroaryl, fluoroaralkyl, fluoroalkaryl, trialkylsilyl, and C.sub.5 -C.sub.8 carbocylic groups, as the aforementioned borate source reagent. Such composition may be employed for forming a non-linear optically active metal borate thin film on a substrate, via depositing by CVD on said substrate a metal from the organometallic source reagent and a borate from the organoborate compound, to react the metal with the borate and yield the non-linear optically active metal borate on the substrate. Non-linear optically active devices, such as data storage devices, laser printers, display panels, and communications devices, can be fabricated using the composition and method of the invention.

摘要翻译： 一种用于MOCVD形成非线性光学活性金属硼酸盐薄膜的MOCVD前体组合物，包括：（I）反应性形成非线性光学活性金属硼酸盐的金属的有机金属源试剂，和（II）有机硼酸盐化合物 其中每个R独立地选自H，烷基，芳基，烷芳基，芳基烷基，烯基，氟烷基，氟代芳基，氟代烷基，氟烷芳基，三烷基甲硅烷基和C5-C8碳环基，作为上述硼酸盐 源试剂。 这种组合物可用于在基底上形成非线性光学活性金属硼酸盐薄膜，通过CVD在所述基底上沉积来自有机金属源试剂的金属和来自有机硼酸盐化合物的硼酸盐，使金属与硼酸盐反应 并在基板上产生非线性光学活性金属硼酸盐。 可以使用本发明的组合物和方法来制造诸如数据存储设备，激光打印机，显示面板和通信设备的非线性光学有源设备。