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67 条记录 (耗时 0.034 秒)

    Etching method for refractory materials
    1.
    发明授权
    Etching method for refractory materials 失效
    耐火材料蚀刻方法

    公开(公告)号：US5705443A

    公开(公告)日：1998-01-06

    申请号：US453339

    申请日：1995-05-30

    申请人： Gregory Stauf ,  Robin A. Gardiner ,  Peter S. Kirlin ,  Peter C. Van Buskirk

    发明人： Gregory Stauf ,  Robin A. Gardiner ,  Peter S. Kirlin ,  Peter C. Van Buskirk

    IPC分类号： C23F4/00 ,  H01L21/311 ,  H01L21/3213 ,  C23F1/02

    CPC分类号： C23F4/00 ,  H01L21/31116 ,  H01L21/32136

    摘要： A plasma-assisted dry etching process for etching of a metal containing material layer on a substrate to remove the metal containing material from the substrate, comprising (i) plasma etching the metal containing material and, (ii) contemporaneously with said plasma etching, contacting the metal containing material with an etch enhancing reactant in a sufficient amount and at a sufficient rate to enhance the etching removal of the metal containing material, in relation to a corresponding plasma etching of the metal containing material layer on the substrate in the absence of the etch enhancing reactant metal material being contacted with the etch enhancing reactant.

    摘要翻译： 一种用于在衬底上蚀刻含金属材料层以从衬底去除含金属材料的等离子体辅助干蚀刻工艺，包括（i）等离子体蚀刻含金属材料，和（ii）与所述等离子体蚀刻同时接触 含有金属的材料具有足够的量和足够的速率的蚀刻增强反应物，以增强含金属材料的蚀刻去除，相对于在不存在金属的情况下在衬底上的含金属材料层的相应等离子体蚀刻 蚀刻增强反应物金属材料与蚀刻增强反应物接触。

    Isotropic dry cleaning process for noble metal integrated circuit structures
    2.
    发明授权
    Isotropic dry cleaning process for noble metal integrated circuit structures 失效
    贵金属集成电路结构各向同性干洗工艺

    公开(公告)号：US06709610B2

    公开(公告)日：2004-03-23

    申请号：US09768494

    申请日：2001-01-24

    申请人： Peter C. Van Buskirk ,  Frank DiMeo, Jr. ,  Peter S. Kirlin ,  Thomas H. Baum

    发明人： Peter C. Van Buskirk ,  Frank DiMeo, Jr. ,  Peter S. Kirlin ,  Thomas H. Baum

    IPC分类号： C23F130

    CPC分类号： H01L28/65 ,  C07F15/004 ,  C23C16/18 ,  C23C16/40 ,  C23F1/30 ,  C30B25/02 ,  C30B29/02 ,  C30B29/16 ,  H01L21/02071 ,  H01L21/32136 ,  H01L28/55 ,  Y10S438/906

    摘要： A method for removing from a microelectronic device structure a noble metal residue including at least one metal selected from the group consisting of platinum, palladium, iridium and rhodium, by contacting the microelectronic device structure with a cleaning gas including a reactive halide composition, e.g., XeF2, SF6, SiF4, Si2F6 or SiF3 and SiF2 radicals. The method may be carried out in a batch-cleaning mode, in which fresh charges of cleaning gas are successively introduced to a chamber containing the residue-bearing microelectronic device structure. Each charge is purged from the chamber after reaction with the residue, and the charging/purging is continued until the residue has been at least partially removed to a desired extent. Alternatively, the cleaning gas may be continuously flowed through the chamber containing the microelectronic device structure, until the noble metal residue has been sufficiently removed.

    摘要翻译： 通过使微电子器件结构与包括反应性卤化物组合物的清洁气体接触，从微电子器件结构去除包含选自铂，钯，铱和铑中的至少一种金属的贵金属残渣的方法， XeF 2，SF 6，SiF 4，Si 2 F 6或SiF 3和SiF 2基团。 该方法可以以分批清洁模式进行，其中清洁气体的新鲜电荷依次引入到含有残留物微电子器件结构的室中。 在与残留物反应之后，每个电荷从室中吹扫，并持续进行充电/净化，直到残余物至少部分地被去除到所需的程度。 或者，清洁气体可以连续流过包含微电子器件结构的室，直到贵金属残留物被充分除去。

    Chemical mechanical polishing of FeRAM capacitors
    3.
    发明授权
    Chemical mechanical polishing of FeRAM capacitors 失效
    FeRAM电容器的化学机械抛光

    公开(公告)号：US5976928A

    公开(公告)日：1999-11-02

    申请号：US975366

    申请日：1997-11-20

    申请人： Peter S. Kirlin ,  Peter C. Van Buskirk

    发明人： Peter S. Kirlin ,  Peter C. Van Buskirk

    IPC分类号： H01L21/302 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/70 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105

    CPC分类号： H01L28/55 ,  H01L27/10852 ,  H01L27/10861

    摘要： A method of fabricating a ferroelectric capacitor structure by sequentially depositing a bottom electrode layer, a ferroelectric layer and a top electrode layer on a base structure, optionally with deposition of a layer of a conductive barrier material beneath the bottom electrode layer, to form a capacitor precursor structure, and planarizing the capacitor precursor structure by chemical mechanical polishing to yield the ferroelectric capacitor structure, e.g., a stack capacitor or trench capacitor. The process is carried out without dry etching of the electrode layers or dry etching of the ferroelectric layer, to yield ferroelectric capacitors having a very small feature size, as for example between 0.10 and 0.20 .mu.m.

    摘要翻译： 通过在底部结构上依次沉积底部电极层，铁电体层和顶部电极层，任选地在底部电极层的下方沉积导电阻挡材料，制造铁电体电容器结构的方法，以形成电容器 前体结构，并通过化学机械抛光对电容器前体结构进行平面化以产生铁电电容器结构，例如堆叠电容器或沟槽电容器。 该工艺在不干电蚀层或铁电层的干蚀刻的情况下进行，以产生具有非常小的特征尺寸的铁电电容器，例如在0.10至0.20μm之间。

    SOFC INTERCONNECT BARRIERS AND METHODS OF MAKING SAME USING MASKS
    7.
    发明申请
    SOFC INTERCONNECT BARRIERS AND METHODS OF MAKING SAME USING MASKS 审中-公开

    公开(公告)号：US20180062183A1

    公开(公告)日：2018-03-01

    申请号：US15790023

    申请日：2017-10-22

    申请人： Jeffrey F. Roeder ,  Peter C. Van Buskirk

    发明人： Jeffrey F. Roeder ,  Peter C. Van Buskirk

    IPC分类号： H01M8/021

    摘要： A novel method to produce thin films spatially disposed on desired areas of workpieces is disclosed. Examples of include the formation of a yttria stabilized zirconia (YSZ) film formed on a desired portion of a stainless steel interconnect for solid oxide fuel cells by Atomic Layer Deposition (ALD). A number of methods to produce the spatially disposed YSZ film structures are described including polymeric and silicone rubber masks. The thin film structures have utility for preventing the reaction of glasses with metals, in particular alkali-earth containing glasses with ferritic stainless steels, allowing high temperature bonding of these materials.

    PHOTOCATALYTIC DEVICES AND SYSTEMS
    9.
    发明申请
    PHOTOCATALYTIC DEVICES AND SYSTEMS 审中-公开
    光电设备和系统

    公开(公告)号：US20150110679A1

    公开(公告)日：2015-04-23

    申请号：US14520321

    申请日：2014-10-21

    申请人： Peter C. Van Buskirk ,  Jeffrey F. Roeder

    发明人： Peter C. Van Buskirk ,  Jeffrey F. Roeder

    IPC分类号： A61L9/00

    CPC分类号： A61L9/00 ,  A61L2/232 ,  A61L2/238 ,  B01J21/063

    摘要： Novel photocatalytic devices are disclosed, that utilize ultrathin titania based photocatalytic materials formed on optical elements with high transmissivity, high reflectivity or scattering characteristics, or on high surface area or high porosity open cell materials. The disclosure includes methods to fabricate such devices, including MOCVD and ALD. The disclosure also includes photocatalytic systems that are either standalone or combined with general illumination (lighting) utility, and which may incorporate passive fluid exchange, user configurable photocatalytic optical elements, photocatalytic illumination achieved either by the general illumination light source, dedicated blue or UV light sources, or combinations thereof, and operating methodologies for combined photocatalytic and lighting systems. The disclosure also includes photocatalytic materials incorporated on the surface of packaged LEDs, LED lamps and LED luminaires, with photocatalytic materials incorporated on optically useful luminaire surfaces or on the surface of the remote phosphor. The disclosure also includes ultrathin photocatalytic materials incorporated on surfaces to affect antibacterial and antiviral properties.

    摘要翻译： 公开了新型光催化装置，其利用形成在具有高透射率，高反射率或散射特性的光学元件上形成的超薄二氧化钛基光催化材料，或在高表面积或高孔隙率开孔材料上。 本公开包括制造这样的装置的方法，包括MOCVD和ALD。 本公开还包括独立的或与一般照明（照明）实用程序组合的光催化体系，其可以包括无源流体交换，用户可配置的光催化光学元件，通过一般照明光源，专用蓝光或UV光实现的光催化照明 来源或其组合，以及组合的光催化和照明系统的操作方法。 本公开还包括结合在封装的LED，LED灯和LED灯具的表面上的光催化材料，其中光催化材料结合在光学上有用的照明器表面上或在远程荧光体的表面上。 本公开还包括掺入表面的超薄光催化材料以影响抗菌和抗病毒性质。