公开(公告)号：US20180047855A1

公开(公告)日：2018-02-15

申请号：US15558130

申请日：2015-05-15

Applicant: HITACHI, LTD.

Inventor： Kan YASUI ,  Hiroyuki MATSUSHIMA ,  Hiroyuki OKINO

IPC: H01L29/872 ,  H01L29/06 ,  H01L25/18 ,  H01L29/16

Abstract: In a Schottky barrier diode comprising silicon carbide: an active region includes a first semiconductor region of a first conductivity type configuring a first Schottky junction having a plurality of linear patterns between a first electrode and the first semiconductor region and a second semiconductor region of a second conductivity type adjacent to the first Schottky junction and connected to the first electrode; at the border of the active region and a periphery region, a second Schottky junction comprising the first electrode and the first semiconductor region and having at least one annular pattern surrounding the linear patterns is provided and the second semiconductor region is adjacent to the second Schottky junction and is connected to the first electrode; and the first and second Schottky junctions are conductive parts and the second semiconductor region is a nonconductive part in a forward bias state.

公开(公告)号：US20170352648A1

公开(公告)日：2017-12-07

申请号：US15539447

申请日：2014-12-26

Applicant: Hitachi, Ltd.

Inventor： Kan YASUI ,  Kazuhiro SUZUKI ,  Takafumi TANIGUCHI

IPC: H01L25/18 ,  H01L23/28 ,  H01L29/78 ,  H01L29/872 ,  H01L23/00 ,  H01L25/07

CPC classification number: H01L25/18 ,  H01L21/561 ,  H01L23/24 ,  H01L23/28 ,  H01L23/3157 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/92 ,  H01L25/07 ,  H01L25/072 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/78 ,  H01L29/7802 ,  H01L29/872 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/06181 ,  H01L2224/291 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/4847 ,  H01L2224/49111 ,  H01L2224/4917 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2924/0002 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2924/014 ,  H01L2924/00014

Abstract: In order to form, in a wide band gap semiconductor device, a high field resistant sealing material having a large end portion film thickness, said high field resistant sealing material corresponding to a reduced termination region having a high field intensity, and to improve accuracy and shorten time of manufacturing steps, this semiconductor device is configured as follows. At least a part of a cross-section of a high field resistant sealing material formed close to a termination region at the periphery of a semiconductor chip has a perpendicular shape at a chip outer peripheral end portion, said shape having, on the chip inner end side, a film thickness that is reduced toward the inner side. In a semiconductor device manufacturing method for providing such semiconductor device, the high field resistant sealing material is formed in a semiconductor wafer state, then, heat treatment is performed, and after dicing is performed, a chip is mounted.

公开(公告)号：US20170352604A1

公开(公告)日：2017-12-07

申请号：US15538907

申请日：2014-12-24

Applicant: Hitachi, Ltd.

Inventor： Takashi HIRAO ,  Kan YASUI ,  Kazuhiro SUZUKI

IPC: H01L23/31 ,  H01L23/29 ,  H01L23/373 ,  H01L23/00 ,  H02M7/00 ,  H01L29/872 ,  H01L29/16 ,  H01L29/06 ,  H01L25/18 ,  H02M7/537 ,  H01L23/053 ,  H02P27/06

CPC classification number: H01L23/3192 ,  H01L23/053 ,  H01L23/24 ,  H01L23/291 ,  H01L23/293 ,  H01L23/296 ,  H01L23/3114 ,  H01L23/3171 ,  H01L23/3735 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/18 ,  H01L29/0638 ,  H01L29/1608 ,  H01L29/872 ,  H01L2224/32225 ,  H01L2224/48111 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/0002 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/12032 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14252 ,  H01L2924/181 ,  H02M7/003 ,  H02M7/537 ,  H02P27/06 ,  H01L2924/00012 ,  H01L2924/00

Abstract: In order to improve productivity of a semiconductor device, while improving stability of the blocking voltage of the semiconductor device, this semiconductor device is characterized by having a semiconductor element, and a laminated structure having three resin layers, said laminated structure being in a peripheral section surrounding a main electrode on one surface of the semiconductor element. The semiconductor device is also characterized in that the laminated structure has, on the center section side of the semiconductor element, a region where a lower resin layer is in contact with an intermediate resin layer, and a region where the lower resin layer is in contact with an upper resin layer.