公开(公告)号：US09963785B2

公开(公告)日：2018-05-08

申请号：US14667692

申请日：2015-03-25

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Masayuki Asai ,  Koichi Honda ,  Mamoru Umemoto ,  Kazuyuki Okuda

IPC分类号： C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  H01L21/02 ,  H01J37/32 ,  C23C16/52 ,  C23C16/08 ,  C23C16/40 ,  C23C16/509 ,  C23C16/54 ,  H01L21/033 ,  H01L21/3205

CPC分类号： C23C16/52 ,  C23C16/08 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4401 ,  C23C16/4408 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/509 ,  C23C16/54 ,  H01J37/3244 ,  H01J37/32899 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/0337 ,  H01L21/32051 ,  H01L21/32053

摘要： Disclosed is a method of manufacturing a semiconductor device including: performing a pre-process to a metal film or a GST film by supplying a first processing gas to a substrate, on a surface of which the metal film or the GST film is formed, without supplying a second processing gas; and performing a formation process to the substrate to which the pre-process has been performed such that a film is formed on the metal film or the GST film by executing at least one cycle of alternately (i) supplying the first processing gas, and (ii) supplying the second processing gas that is activated by plasma excitation.

公开(公告)号：US20150140839A1

公开(公告)日：2015-05-21

申请号：US14592090

申请日：2015-01-08

申请人： HITACHI KOKUSAI ELECTRIC, INC.

发明人： Tetsuo Yamamoto ,  Naoki Matsumoto ,  Koichi Honda

IPC分类号： H01L21/02 ,  H01J37/32 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52

CPC分类号： H01L21/02274 ,  C23C16/345 ,  C23C16/45544 ,  C23C16/45578 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/3244 ,  H01J2237/3321 ,  H01L21/0214 ,  H01L21/0228

摘要： Provided is a substrate processing apparatus, which comprises a process chamber configured to process a substrate, a first plasma generation chamber in the process chamber, a first reactive gas supply unit configured to supply first reactive gas into the first plasma generation chamber, a pair of first discharge electrodes configured to generate plasma and to excite the first reactive gas, a first gas ejection port installed in a side wall of the first plasma generation chamber to eject an active species toward the substrate, a second plasma generation chamber in the process chamber, a second reactive gas supply unit configured to supply second reactive gas into the second plasma generation chamber, a pair of second discharge electrodes configured to generate plasma and to excite the second reactive gas, and a second gas ejection port installed in a side wall of the second plasma generation chamber to eject an active species.

摘要翻译： 提供了一种基板处理装置，其包括处理基板的处理室，处理室中的第一等离子体生成室，被配置为将第一反应气体供应到第一等离子体产生室中的第一反应气体供给单元， 第一放电电极，被配置为产生等离子体并激发第一反应气体;第一气体喷出口，安装在第一等离子体产生室的侧壁中，以向基板喷射活性物质;处理室中的第二等离子体产生室; 第二反应气体供给单元，被配置为将第二反应气体供应到第二等离子体产生室中;一对第二放电电极，被配置为产生等离子体并激发第二反应气体;以及第二气体喷出口，其安装在第二等离子体产生室的侧壁中 第二等离子体产生室以喷射活性物质。

公开(公告)号：US09593422B2

公开(公告)日：2017-03-14

申请号：US14667691

申请日：2015-03-25

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Masayuki Asai ,  Koichi Honda ,  Mamoru Umemoto ,  Kazuyuki Okuda

IPC分类号： C23C16/455 ,  C23C16/08 ,  H01J37/32 ,  H01L21/02 ,  C23C16/52 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/509 ,  C23C16/54 ,  H01L21/033 ,  H01L21/3205

CPC分类号： C23C16/52 ,  C23C16/08 ,  C23C16/345 ,  C23C16/401 ,  C23C16/4401 ,  C23C16/4408 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/509 ,  C23C16/54 ,  H01J37/3244 ,  H01J37/32899 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/0337 ,  H01L21/32051 ,  H01L21/32053

摘要： Disclosed is a method of manufacturing a semiconductor device including: performing a pre-process to a substrate, on a surface of which a metal film or a GST film is formed, such that a first film is formed on the metal film or the GST film by executing at least one cycle of alternately performing (i) supplying a first processing gas, and (ii) supplying a second processing gas that is not activated by plasma excitation; and performing a formation process to the substrate to which the pre-process has been performed such that a second film is formed on the first film by executing at least one cycle of alternately (i) supplying the first processing gas, and (ii) supplying the second processing gas that is activated by plasma excitation.

摘要翻译： 公开了一种制造半导体器件的方法，包括：在其表面上形成金属膜或GST膜的基板上进行预处理，使得在金属膜或GST膜上形成第一膜 通过执行交替执行（i）供应第一处理气体的至少一个循环，和（ii）提供未被等离子体激发而激活的第二处理气体; 并且对已经进行了预处理的基板进行形成处理，使得通过执行交替地（i）供应第一处理气体的至少一个循环，并且（ii）提供第一膜，形成第二膜，从而在第一膜上形成第二膜 通过等离子体激发而激活的第二处理气体。