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6 条记录 (耗时 0.01 秒)

    Impedance-matched through-wafer transition using integrated heat-spreader technology
    1.
    发明授权
    Impedance-matched through-wafer transition using integrated heat-spreader technology 有权

    公开(公告)号：US10950562B1

    公开(公告)日：2021-03-16

    申请号：US16559486

    申请日：2019-09-03

    申请人： HRL Laboratories, LLC

    发明人： Eric M. Prophet ,  Florian G. Herrault

    IPC分类号： H01L23/66 ,  H01L23/367 ,  H01L23/04 ,  H01L21/48 ,  H01L21/768 ,  H01L21/288 ,  H01L21/52

    摘要： A microwave electronic component comprising a substrate having top and bottom substrate surfaces; the substrate comprising an aperture between the top and bottom substrate surfaces; a metallic heat sink filling the aperture; a microwave integrated circuit having a top circuit surface with at least one microwave signal port and a bottom circuit surface in contact with the metallic heat sink; a signal line comprising at least a metallic via between the top and bottom substrate surfaces, and a top signal conductor arranged between the microwave signal port and the metallic via; wherein the dimensions and location of the metallic via are chosen such that the metallic via forms, together with the metallic heat sink, a first impedance-matched non-coaxial transmission line.

    Effective biasing active circulator with RF choke concept
    2.
    发明授权
    Effective biasing active circulator with RF choke concept 有权

    公开(公告)号：US09893401B2

    公开(公告)日：2018-02-13

    申请号：US14554995

    申请日：2014-11-26

    申请人： HRL Laboratories, LLC

    发明人： Jongchan Kang ,  Hasan Sharifi ,  Eric M. Prophet

    IPC分类号： H01P1/383 ,  H03H11/38

    CPC分类号： H01P1/383 ,  H03H11/16 ,  H03H11/38

    摘要： A multi-port active circulator where each of a plurality of FET transistors has (i) a gate connected to an associated port of the multi-port active circulator via a capacitor of an associated one of a plurality of first RF chokes, each of the first RF chokes being connected to a gate of an associated FET transistor of said plurality of transistors, the associated port of said associated FET transistor and to a power supply bias connection; (ii) a source connected to a common point; and (iii) a drain connected to the gate of the same FET transistor by a feedback circuit and connected to the gate of a neighboring FET transistor via a capacitor of one of a plurality of second RF chokes, each of which coupling gates and drains of neighboring FET transistors via capacitors thereof and being connected to another power supply bias connection.

    E-plane probe with stepped surface profile for high-frequency
    3.
    发明授权
    E-plane probe with stepped surface profile for high-frequency 有权
    E平面探头具有阶梯式表面轮廓，适用于高频

    公开(公告)号：US09553057B1

    公开(公告)日：2017-01-24

    申请号：US14502347

    申请日：2014-09-30

    申请人： HRL Laboratories, LLC

    发明人： Eric M. Prophet ,  Alexandros D. Margomenos ,  Miroslav Micovic

    IPC分类号： H01L23/66 ,  H01L21/82 ,  H01P1/219

    CPC分类号： H01L23/66 ,  H01L21/82 ,  H01L2223/6683 ,  H01P1/2039 ,  H01P5/107

    摘要： A method of forming an E-plane probe includes forming a plurality of monolithically integrated circuits (MICs) on a wafer, each MIC including a monolithic microwave integrated circuit (MMIC), and an E-plane probe coupled to the MMIC, mounting the wafer on an ultra-violet (UV) tape, cutting the wafer with a laser at a first power and a first linear cutting speed along vertical streets and then along horizontal streets to form separate substrates, cutting with the laser at a second power and a second linear cutting speed a rectangle or a portion of a rectangle from the separate substrates to form narrow substrate extensions on the substrates, and repeating this step for each rectangle or portion of a rectangle to be cut to form substrate extensions, and curing the UV tape, wherein the E-plane probes are on the narrow substrate extensions.

    摘要翻译： 形成E平面探针的方法包括在晶片上形成多个单片集成电路（MIC），每个MIC包括单片微波集成电路（MMIC）和耦合到MMIC的E平面探针，安装晶片 在紫外线（UV）带上，以垂直街道的第一功率和第一线性切割速度用激光切割晶片，然后沿着水平街道形成分离的基板，用第二功率切割激光 线性切割速度是来自分离的基板的矩形或矩形的一部分，以在基板上形成窄的基板延伸部，并且对于每个矩形或要切割的矩形部分重复该步骤以形成基板延伸部，并固化UV带， 其中E平面探针位于窄的衬底延伸部上。

    Active circulator with cascode transistor
    5.
    发明授权
    Active circulator with cascode transistor 有权

    公开(公告)号：US09641156B1

    公开(公告)日：2017-05-02

    申请号：US14949044

    申请日：2015-11-23

    申请人： HRL LABORATORIES, LLC

    发明人： Jongchan Kang ,  Hasan Sharifi ,  Eric M. Prophet

    IPC分类号： H01P1/32 ,  H03H11/38

    CPC分类号： H03H11/38 ,  H03K17/693

    摘要： A multi-port active circulator includes a plurality of cascode circuits coupled to one another in a ring. Each respective cascode circuit of the plurality of cascode circuits is coupled to a respective port of a plurality of ports. Each respective cascode circuit includes a common source transistor, a common gate transistor coupled to the common source transistor, and a feedback circuit coupled from the common gate transistor to the common source transistor. Each common source transistor of each respective cascode circuit is coupled to a common junction point.