High density memory cell
    4.
    发明授权
    High density memory cell 有权
    高密度存储单元

    公开(公告)号:US06751111B2

    公开(公告)日:2004-06-15

    申请号:US10227380

    申请日:2002-08-26

    IPC分类号: G11C1500

    摘要: A memory cell comprising an inverting stage, an access transistor coupled between a data line and an input of the inverting stage, the access transistor being responsive to a control signal for selectively coupling the data line and the inverting stage input, a feedback transistor coupled to the inverting stage input and being responsive to an output of the inverting stage for latching the inerting stage in a first logic state and whereby the cell is maintained in a second logic state by a leakage current flowing through the access transistor which is greater than a current flowing through the feedback transistor.

    摘要翻译: 存储单元,包括反相级,耦合在数据线和反相级的输入端之间的存取晶体管,所述存取晶体管响应于选择性地耦合所述数据线和所述反相级输入的控制信号,耦合到 反相级输入并且响应于反相级的输出,用于在第一逻辑状态下锁存所述衰减级,并且由此流过所述存取晶体管的漏电流将所述单元保持在第二逻辑状态,所述漏电流大于电流 流过反馈晶体管。