Imaging system for an extreme ultraviolet (EUV) beam-based microscope
    1.
    发明授权
    Imaging system for an extreme ultraviolet (EUV) beam-based microscope 失效
    用于极紫外(EUV)光束显微镜的成像系统

    公开(公告)号:US06894837B2

    公开(公告)日:2005-05-17

    申请号:US10626130

    申请日:2003-07-24

    IPC分类号: G21K1/06 G21K7/00 G02B21/00

    CPC分类号: G21K1/06 G21K7/00

    摘要: Imaging system for a microscope based on extreme ultraviolet (EUV) radiation. The present invention is directed to a reflective imaging system for an x-ray microscope for examining and object in an object plane, wherein the object is illuminated by rays of a wavelength of less than 100 nm, particularly less than 30 nm, and is imaged in a magnified manner in an image plane. In the imaging system, according to the invention, for a microscope based on extreme ultraviolet (EUV) radiation with wavelengths in the range of less than 100 nm, with a magnification of 0.1× to 1000× and a structural length of less than 5 m, at least one of the imaging optical elements 2 and 3 in the beam path has a diffractive-reflective structure which is arranged on a spherical or plane area and has a non-rotationally symmetric, asymmetric shape. The arrangement according to the invention provides an imaging system which avoids the disadvantages of the prior art and ensures a high imaging quality. The manufacturing cost remains reasonable due to the exclusive use of spherical mirrors.

    摘要翻译: 基于极紫外(EUV)辐射的显微镜成像系统。 本发明涉及一种用于检查和物体在物平面中的X射线显微镜的反射成像系统,其中物体被小于100nm,特别是小于30nm的波长的光照射,并被成像 在图像平面中以放大的方式。 在成像系统中,根据本发明,对于具有波长在小于100nm,具有0.1x至1000x的放大倍数和小于5μm的结构长度的基于极紫外(EUV)辐射的显微镜, 光束路径中的成像光学元件2和3中的至少一个具有布置在球形或平面区域上并具有非旋转对称的不对称形状的衍射反射结构。 根据本发明的装置提供了一种避免现有技术的缺点并确保高成像质量的成像系统。 由于专门使用球面镜,制造成本仍然是合理的。

    Microscope imaging system and method for emulating a high aperture imaging system, particularly for mask inspection
    3.
    发明申请
    Microscope imaging system and method for emulating a high aperture imaging system, particularly for mask inspection 有权
    用于模拟高光圈成像系统的显微镜成像系统和方法,特别是用于掩模检查

    公开(公告)号:US20060012873A1

    公开(公告)日:2006-01-19

    申请号:US10917626

    申请日:2004-08-13

    IPC分类号: G02B21/06

    摘要: The present invention is directed to an optical imaging system for inspection microscopes with which lithography masks can be checked for defects particularly through emulation of high-aperture scanner systems. The microscope imaging system for emulating high-aperture imaging systems comprises imaging optics, a detector and an evaluating unit, wherein polarizing optical elements are selectively arranged in the illumination beam path for generating different polarization states of the illumination beam and/or in the imaging beam path for selecting different polarization components of the imaging beam, an optical element with a polarization-dependent intensity attenuation function can be introduced into the imaging beam path, images of the mask and/or sample are received by the detector for differently polarized beam components and are conveyed to the evaluating unit for further processing. With the proposed solution, it is possible in particular to examine lithography masks for defects by means of inspection microscopes in spite of increasingly smaller structures and increasingly higher image-side numerical apertures of the imaging systems. Realistic images of the scanner systems can be generated by emulating the occurring vector effects.

    摘要翻译: 本发明涉及一种用于检查显微镜的光学成像系统,通过该光学成像系统可以通过光学掩模来检查缺陷,特别是通过高光阑扫描器系统的仿真。 用于模拟高光圈成像系统的显微镜成像系统包括成像光学器件,检测器和评估单元,其中偏振光学元件选择性地布置在照明光束路径中,用于产生照明光束和/或成像光束的不同偏振状态 用于选择成像光束的不同偏振分量的路径,具有偏振相关强度衰减功能的光学元件可以被引入到成像光束路径中,掩模和/或采样的图像被检测器接收用于不同偏振光束分量, 被传送到评估单元进行进一步处理。 利用所提出的解决方案,尽管越来越小的结构和成像系统的图像侧数值孔径越来越高,但是可以通过检查显微镜检查用于缺陷的光刻掩模。 可以通过模拟出现的矢量效应来生成扫描仪系统的现实图像。

    Method and apparatus for analyzing a group of photolithographic masks
    8.
    发明授权
    Method and apparatus for analyzing a group of photolithographic masks 有权
    用于分析一组光刻掩模的方法和装置

    公开(公告)号:US08264535B2

    公开(公告)日:2012-09-11

    申请号:US12597247

    申请日:2008-07-11

    IPC分类号: H04N7/18

    CPC分类号: G03F1/72 G03F1/30

    摘要: The invention relates to a method for analyzing a group of at least two masks for photolithography, wherein each of the masks comprises a substructure of a total structure, which is to be introduced in a layer of the wafer in the lithographic process, and the total structure is introduced in the layer of the wafer by introducing the substructures in sequence. In this method, a first aerial image of a first one of the at least two masks is recorded, digitized and stored in a data structure. Then, a second aerial image of a second one of the at least two masks is recorded, digitized and stored in a data structure. A combination image is generated from the data of the first and second aerial images, which combination image is represented and/or evaluated.

    摘要翻译: 本发明涉及一种用于分析用于光刻的一组至少两个掩模的方法,其中每个掩模包括总结构的子结构,其将在光刻工艺中被引入晶片的层中,并且总共 通过依次引入子结构,在晶片层中引入结构。 在该方法中,将至少两个掩模中的第一个的第一空间图像记录,数字化并存储在数据结构中。 然后,将至少两个掩模中的第二个的第二个空间图像记录,数字化并存储在数据结构中。 从第一和第二空间图像的数据生成组合图像,该组合图像被表示和/或评估。

    METHOD AND APPARATUS FOR ANALYZING A GROUP OF PHOTOLITHOGRAPHIC MASKS
    9.
    发明申请
    METHOD AND APPARATUS FOR ANALYZING A GROUP OF PHOTOLITHOGRAPHIC MASKS 有权
    用于分析一组光刻掩模的方法和装置

    公开(公告)号:US20100157046A1

    公开(公告)日:2010-06-24

    申请号:US12597247

    申请日:2008-07-11

    IPC分类号: H04N7/18 G06K9/62

    CPC分类号: G03F1/72 G03F1/30

    摘要: The invention relates to a method for analyzing a group of at least two masks for photolithography, wherein each of the masks comprises a substructure of a total structure, which is to be introduced in a layer of the wafer in the lithographic process, and the total structure is introduced in the layer of the wafer by introducing the substructures in sequence. In this method, a first aerial image of a first one of the at least two masks is recorded, digitized and stored in a data structure. Then, a second aerial image of a second one of the at least two masks is recorded, digitized and stored in a data structure. A combination image is generated from the data of the first and second aerial images, which combination image is represented and/or evaluated.

    摘要翻译: 本发明涉及一种用于分析用于光刻的一组至少两个掩模的方法,其中每个掩模包括总结构的子结构,其将在光刻工艺中被引入晶片的层中,并且总共 通过依次引入子结构,在晶片层中引入结构。 在该方法中,将至少两个掩模中的第一个的第一空间图像记录,数字化并存储在数据结构中。 然后,将至少两个掩模中的第二个的第二个空间图像记录,数字化并存储在数据结构中。 从第一和第二空间图像的数据生成组合图像,该组合图像被表示和/或评估。

    Microscope with light source
    10.
    发明授权
    Microscope with light source 失效
    显微镜带光源

    公开(公告)号:US06307690B1

    公开(公告)日:2001-10-23

    申请号:US09509272

    申请日:2000-03-24

    IPC分类号: G02B504

    CPC分类号: G02B27/144 G02B21/082

    摘要: A microscope with incident light input coupling, wherein the light provided for the incident illumination is directed onto the partially reflecting layer of a beam splitter cube and is directed from there through the objective onto the specimen, while the light reflected and/or emitted by the specimen travels back to the partially reflecting layer and passes through the latter into the imaging beam path. In a microscope of this type, the beam splitter cube is provided with a negative spherical curvature at its outer surface facing the objective. Further, instead of the conventional tube lens, there is a combination formed of a converging lens and a diverging lens, wherein the surface curvatures of the converging lens and the diverging lens and the negative spherical curvature effected at the beam splitter cube are adapted to one another in such a way that the back-reflections of the incident illumination in the intermediate image plane are limited to a minimum.

    摘要翻译: 具有入射光输入耦合的显微镜,其中为入射照明提供的光被引导到分束器立方体的部分反射层上,并且从那里通过物镜被引导到样本上,而被反射和/或发射的光 样品返回到部分反射层,并通过后者进入成像光束路径。 在这种类型的显微镜中,分束器立方体在其面向物镜的外表面处具有负的球形曲率。 此外,代替常规管透镜,存在由会聚透镜和发散透镜形成的组合,其中会聚透镜和发散透镜的表面曲率和在分束器立方体处实现的负球面曲率适合于一个 另一种方式是将中间像平面中的入射照明的背反射限制到最小。