摘要:
The invention relates to a method for analyzing a group of at least two masks for photolithography, wherein each of the masks comprises a substructure of a total structure, which is to be introduced in a layer of the wafer in the lithographic process, and the total structure is introduced in the layer of the wafer by introducing the substructures in sequence. In this method, a first aerial image of a first one of the at least two masks is recorded, digitized and stored in a data structure. Then, a second aerial image of a second one of the at least two masks is recorded, digitized and stored in a data structure. A combination image is generated from the data of the first and second aerial images, which combination image is represented and/or evaluated.
摘要:
The invention relates to a method for analyzing a group of at least two masks for photolithography, wherein each of the masks comprises a substructure of a total structure, which is to be introduced in a layer of the wafer in the lithographic process, and the total structure is introduced in the layer of the wafer by introducing the substructures in sequence. In this method, a first aerial image of a first one of the at least two masks is recorded, digitized and stored in a data structure. Then, a second aerial image of a second one of the at least two masks is recorded, digitized and stored in a data structure. A combination image is generated from the data of the first and second aerial images, which combination image is represented and/or evaluated.
摘要:
An electron-optical arrangement provides a primary beam path for a beam of primary electrons and a secondary beam path for secondary electrons. The electron-optical arrangement includes a magnet arrangement having first, second and third magnetic field regions. The first magnetic field region is traversed by the primary beam path and the secondary beam path. The second magnetic field region is arranged in the primary beam path upstream of the first magnetic field region and is not traversed by the secondary beam path. The first and second magnetic field regions deflect the primary beam path in substantially opposite directions. The third magnetic field region is arranged in the secondary beam path downstream of the first magnetic field region and is not traversed by the first beam path. The first and third magnetic field regions deflect the secondary beam path in a substantially same direction.
摘要:
An examining system for imaging an object positionable in an object plane, includes an illumination device for supplying energy to a delimited field of the object such that charged particles emerge from locations of the field, the field being displaceable in the plane of the object, a first deflector for providing a variable deflection field for guiding charged particles emerging from locations of a selectable region of the object through a fixed, predetermined beam cross-section, and a position-sensitive detector disposed in the beam path such that the charged particles, after having passed through the first deflector, impinge on the position-sensitive detector, wherein particles emerging from different locations of the region are imaged on different locations of the position-sensitive detector which are allocated to the locations of emergence.
摘要:
A projection apparatus for imaging a pattern of a mask onto a substrate by means of a beam of projected charged particles is disclosed. The apparatus includes a radiation sensitive layer. The apparatus also includes a mask. The mask includes a membrane layer made of a first material, scattering regions forming the pattern and made of a second material scattering the charged particles more than the membrane layer, and a plurality of straightly extending supporting struts spaced apart from one another and supporting the membrane layer together with the scattering regions. The apparatus also includes a projection apparatus. The projection apparatus includes a beam shaping device for producing the projection beam with a predetermined projection beam cross-section in the mask plane, and a positioning device for moving the projection beam cross-section in the mask plane along a predetermined path over the mask parallel to the direction into which the struts extend. The apparatus also includes a sensor for supplying a measuring signal which is dependent on the number of charged particles impinging on a mark region provided on the mask.
摘要:
A magnetic lens assembly for providing a magnetic deflection field for a beam of charged particles is disclosed. The assembly includes a focusing lens device for providing a magnetic field which has substantially rotational symmetry in respect of a symmetry axis of the assembly and acts on the beam traversing the magnetic field as a focusing lens with an optical axis, and includes an axis shifting device for producing a corrective magnetic field which is superposable on the magnetic field provided by the focusing lens device and acts on the beam such that the optical axis is shiftable parallel to the symmetry axis of the assembly. The axis shifting device includes a first set of axially spaced apart rings which are positioned concentrically in respect of the symmetry axis and are made of a material which is substantially not electrically conductive and has a high magnetic permeability. At least one axis shifting coil is provided with a plurality of current conductor windings for producing the corrective magnetic field. The current conductor windings of the axis shifting coil engage around at least one of the rings of the first ring set.
摘要:
A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first regularity.
摘要:
A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first regularity.
摘要:
An electron-optical arrangement provides a primary beam path for a beam of primary electrons and a secondary beam path for secondary electrons. The electron-optical arrangement includes a magnet arrangement having first, second and third magnetic field regions. The first magnetic field region is traversed by the primary beam path and the secondary beam path. The second magnetic field region is arranged in the primary beam path upstream of the first magnetic field region and is not traversed by the secondary beam path. The first and second magnetic field regions deflect the primary beam path in substantially opposite directions. The third magnetic field region is arranged in the secondary beam path downstream of the first magnetic field region and is not traversed by the first beam path. The first and third magnetic field regions deflect the secondary beam path in a substantially same direction.
摘要:
A method for the electron-microscopic observation of a semiconductor arrangement is provided. It includes providing an electron microscopy optics for imaging secondary electrons emanating from the semiconductor arrangement within an extended object field on a position-sensitive detector, providing an illumination device for emitting a primary energy beam, directing the primary energy beam to at least the object field for extracting there secondary electrons from the semiconductor arrangement. The semiconductor arrangement comprises a region with an upper surface provided by a first material and a recess with a high aspect ratio which is surrounded by the upper surface and has a bottom provided by a second material.