摘要:
A method for the contactless measurement of the potential waveform in an electronic component with a scanning electron microscope in which the electron beam is aimed at a measuring point of the integrated circuit until at least one phase range of the measuring voltage is determined by phase-shifting the pulses of the primary electron beam with respect to the measuring voltage and subsequently, the electron beam jumped to at least one further measuring point where a phase range is determined in the same manner permitting measurement of the potential waveform at different points of the integrated circuit and displayed together on a picture screen.
摘要:
The present invention relates to a focussing lens (100) for focussing a charged particle beam (7) onto a specimen (3) at a predetermined landing angle (42; 42′; 42) comprising at least one first electrode (26, 105, 105a) having a first aperture (106) to generate a focussing electric field (110) for focussing the charged particle beam (7) onto the specimen (3); and a correcting electrode having a curved surface (115) to compensate for landing angle dependent distortions of the focussing electric field (110) caused by the specimen (3). With the curved surface (115) of the correcting electrode it is possible to improve the focussing of a charged particle beam at landing angles that differ from the perpendicular landing angle.
摘要:
A spectrometer objective is composed of a short focal length, asymmetrical objective lens comprising an integrated electrostatic opposing field spectrometer and a single-stage deflection system arranged within the magnetic lens. Since the deflection of primary electrons occurs within the spectrometer objective, the space for a two-state deflection system employed in conventional systems between a condenser lens and an objective lens can be eliminated. The extremely-short structural length of the electron beam measuring apparatus which is thereby obtainable, in turn, has a beneficial effect on the influence of the lateral Boersch effect on probe diameter, this influence increasing with the length of the electron-optical beam path.
摘要:
An electrostatic opposing field spectrometer has an extraction electrode (AN) and an opposing field electrode arrangement with a pair of planar opposing field electrodes (EG1 and EG2) mounted to an outer electrode part (EM) at either end of a truncated conical shaped bore extending therethrough, where the smaller opening of the bore is in the direction of the extraction electrode (AN). The planar opposing field electrodes (EG1 and EG2), in conjunction with the bore surface, generates substantially spherical equi-potential lines (A1 and A2) which transmit a larger solid angle distribution of secondary electrons (SE) triggered at a measuring point (M) on the specimen surface (PR).
摘要:
A charged particle beam apparatus is provided which comprises a charged particle source for producing a primary beam of charged particles, aperture means for collimating said primary beam of charged particles, wherein said aperture means is adapted to switch between a collimation of said primary beam to a width appropriate for serial imaging of a sample as well as a collimation of said primary beam to a width appropriate for parallel imaging of said sample, a condenser lens for condensing said primary beam of charged particles, scanning means for deflecting said primary beam of charged particles, an objective lens for focusing said condensed primary beam, a sectorized detector for detecting a secondary charged particles. Also, several different operation modes of the beam apparatus are described allowing for serial imaging as well as parallel imaging.
摘要:
The invention relates to a method as well as to apparatus for testing the function of microstructure elements, wherein the microstructure element is driven for testing the emission and/or mechanical properties and the corpuscles emitted or reflected by it are detected and evaluated.
摘要:
An improved secondary electron spectrometer for measuring voltages occurring on a specimen, such as an integrated circuit chip, utilizing an electron probe has a grating structure for measuring the energy distribution of the secondary electrons independently of the angular distribution of the secondary electrons at the measuring point on the specimen. If the secondary electron spectrometer has an extraction electrode and a deceleration electrode, the grating structure is spherically symmetric.
摘要:
The invention provides a charged particle beam device to inspect or structure a specimen with a primary charged particle beam propagating along an optical axis; a beam tube element having a tube voltage; and a retarding field analyzer in the vicinity of the beam tube element to detect secondary charged particles generated by the primary charged particle beam on the specimen. According to the invention, the retarding field analyzer thereby comprises an entrance grid electrode at a second voltage; at least one filter grid electrode at a first voltage; a charged particle detector to detect the secondary charged particles; and at least one further electrode element arranged between the entrance grid electrode and the at least one filter grid electrode. The at least one further electrode element reduces the size of the stray fields regions in the retarding electric field region to improve the energy resolution of the retarding field analyzer. The improvement of the energy resolution is significant, in particular when the beam tube element is part of a high voltage beam tube.
摘要:
A focussing lens for focussing a charged particle beam onto a specimen at a predetermined landing angle. The focussing lens comprises at least one first electrode having a first aperture to generate a focussing electric field for focussing the charged particle beam onto the specimen and a correcting electrode having a curved surface to compensate for landing angle dependent distortions of the focussing electric field caused by the specimen. With the curved surface of the correcting electrode, it is possible to improve the focussing of a charged particle beam at landing angles that differ from the perpendicular landing angle.
摘要:
The invention refers to an apparatus (10) for inspecting a sample (12) of a specimen (14) by means of an electron beam (34) comprising a vacuum chamber (18); an ion beam device (20) for generating an ion beam (22) used for etching a sample (12) from the specimen (14) within said vacuum chamber (18); an electron beam device (30) having a scanning unit (32) for scanning the electron beam (34) across said specimen (14) within said vacuum chamber (18); said electron beam device (30) having a first detector (36) positioned to detect electrons (38) that are released from the specimen (14) in a backward direction with respect to the direction of the electron beam (34); and said electron beam device (30) having a second detector (40) positioned to detect electrons (42) that are released from the sample (12) of the specimen (14) in a forward direction with respect to the direction of the electron beam (34); and separation means (50; 52) within said vacuum chamber (18) to separate the sample (12) from the specimen (14) for the inspection of the sample (12) by means of the second detector (40). With the apparatus according to the invention, it is possible to perform a transmission inspection of a sample of a specimen, e.g. a thin slice of a semiconductor wafer, at a high throughput at comparably low costs.