摘要:
A method for manufacture of particles for powder coating is disclosed in which the particles are prepared from a suspension obtained from a mixture of a thermosetting resin solution and an aqueous solution containing a water-soluble polymer. The thermosetting resin solution contains A resin, B resin and an organic solvent wherein: (a) 0.5≦{(SP value of the A resin)−(SP value of the B resin)}≧1.5; (b) {(Tg of the A resin)−(Tg of the B resin)}≧10° C.; (C) 40° C.≦(Tg of the A resin)≦100° C., and, 20° C.≦(Tg of the B resin)≦50° C.; and (d) 5/95≦(a ratio in solids weight of the A resin to B resin)≦50/50.
摘要:
A thermosetting powder coating composition prepared by a wet process, which contains a mixture comprising (a) an epoxy-containing acrylic resin, (b) a polycarboxylic acid compound curing agent, (c) fine crosslinked resin particles and, optionally, (d) a resin that exists in the liquid form at room temperature.
摘要:
A thermosetting powder coating composition prepared by a wet process, which contains a mixture comprising (a) an epoxy-containing acrylic resin, (b) a polycarboxylic acid compound curing agent, (c) fine crosslinked resin particles and/or (d) a resin that exists in the liquid form at room temperature.
摘要:
A laminated film including a thermoplastic resin film and an laminated layer that is formed on at least one side of the thermoplastic resin film and comprises (A) a composition, (B) an epoxy crosslinking agent and (C) an acrylic resin having an alkyl chain of 18 to 25 carbon atoms is characterized in that the composition (A) is a composition containing at least a polythiophene and a polyanion and/or a composition containing a polythiophene derivative and a polyanion, the laminated layer contains 15 to 100 parts by weight of the acrylic resin (C) having an alkyl chain of 18 to 25 carbon atoms based on 100 parts by weight of the sum of the composition (A) and the crosslinking agent (B) and/or its reaction product, at least one side of the laminated film has a three-dimensional average surface roughness (SRa) of 3 to 50 nm, and the laminated film contains less than 10 internal contaminant particles with an average particle size of at least 100 μm per 1 m2, so that it has high level of electrical conductivity, good releasability and water resistance, and also has oligomer precipitation-preventing properties during heating.
摘要:
In a constant current circuit, a constant current is caused to flow through a resistor, thereby causing a constant voltage to occur across the resistor. This constant voltage is then superimposed on an output signal of an operational amplifier that is to be fed back to the drain of a field effect transistor, thereby maintaining the same potential in an AC manner between the output terminal of the operational amplifier and the drain of the field effect transistor. In this way, the gate and drain of the field effect transistor is caused to exhibit the same potential in an AC manner, so that no current will occur through the stray capacitance between the gate and drain of the field effect transistor. As a result, similarly to a case of using a feedback capacitor, the input impedance of the field effect transistor can be raised.
摘要:
An optical device includes a substrate, an optical element, a translucent component, a plurality of first terminals and a sealant. The sealant is located lower than the top surface of the translucent component. The top surface of the translucent component is exposed out of the sealant, while the side surface of the translucent component is covered with the sealant.
摘要:
One end of a flexible substrate is connected to a solid-state image sensing device and the other end constitutes an external connection part in which external lead-out electrodes are provided. A plurality of electronic components are mounted on a mounting part of the flexible substrate. The flexible substrate is bent at a first bent part thereof to make an acute angle with the solid-state image sensing device and also bent at a second bent part thereof to make an acute angle with the external connection part. The two acute angles are alternate angles and the solid-state image sensing device has a cross section of the letter Z.
摘要:
An optical apparatus includes an optical device (LED device or semiconductor imaging device) having a photoreceptor/light-emitting region, a peripheral circuit region and an electrode region, a transparent member having a larger light passing through region than the optical device and including, on one surface thereof, protruding electrodes for connection to the optical device, external connection electrodes for connection to a mounting substrate, conductive interconnects for connecting the protruding electrodes and the external connection electrodes, and a transparent adhesive provided between the optical device and the transparent member. In the optical apparatus, one surface of the optical device in which the photoreceptor/light-emitting region is formed and one surface of the transparent member are arrange so as to face to each other and electrodes of the optical device and the protruding electrodes of the transparent member are electrically connected and also adhered by the transparent adhesive.
摘要:
An optical device includes an optical element, a transparent member arranged on the optical element, and a transparent resin adhesive for causing the transparent member to adhere and be fixed onto a circuit formation face of the optical element. The optical device includes a light detecting region having a plurality of micro lenses, a peripheral circuit region formed in the outer peripheral part of the light detecting region, and an electrode region formed at the outer peripheral part of the peripheral circuit region. A roughed region in a saw-toothed shape in section is formed in part of a face of the transparent member which adheres to the optical element, the part being overlapped with the outer peripheral part of the light detecting region as viewed in plan.
摘要:
A pair of superconducting electrodes are so formed as to interpose a semiconductor therebetween, and a control electrode is formed on the semiconductor through an insulator film so as to control the superconductive weak coupling state in the semiconductor between the superconducting electrodes. The distance between the superconducting electrodes is determined by the thickness of the superconductor interposed between the two electrodes, whereby the interelectrode distance is settled with a high precision to improve the uniformity of the device characteristic.And in an arrangement where two superconducting electrodes are formed on a semiconductor layer and the superconductive weak coupling state between such two electrodes is controlled by a third electrode, the gain is increadable by furnishing a varied impurity distribution in the semiconductor layer.