公开(公告)号：US4486277A

公开(公告)日：1984-12-04

申请号：US493574

申请日：1983-05-11

申请人： Haruhisa Miyake ,  Manabu Suhara ,  Hiroshi Mori ,  Yoshihiko Saito

发明人： Haruhisa Miyake ,  Manabu Suhara ,  Hiroshi Mori ,  Yoshihiko Saito

IPC分类号： C25B13/08 ,  C08J5/22 ,  C25B1/14 ,  C25B13/00

CPC分类号： C08J5/2281 ,  C08J2327/18

摘要： An electrolytic cation exchange membrane comprises a first film made of a fluorinated polymer having cation exchange groups and a second film laminated thereon, made of a fluorinated polymer having carboxylic acid groups as its ion exchange groups and containing the following repeating units (A), (B) and (C) and having a smaller thickness and greater specific electric resistance than the first film; ##STR1## where each of X and X' is --F, --Cl or --CF.sub.3, R.sub.f is a perfluoroalkyl group having from 1 to 10 carbon atoms, M is hydrogen or an alkali metal and Y is selected from the group consisting of --CF.sub.2).sub.x, --O--CF.sub.2).sub.x, ##STR2## where each of x and y is an integer of from 0 to 10 and Z is --F or R.sub.f as defined above, provided that B/A+B+C (molar ratio) and C/A+B+C (molar ratio) are from 0.01 to 0.3 and from 0.05 to 0.5, respectively.

摘要翻译： 电解阳离子交换膜包括由具有阳离子交换基团的氟化聚合物制成的第一膜和层压在其上的第二膜，由具有羧酸基的氟化聚合物作为其离子交换基团并含有以下重复单元（A），（ B）和（C），并且具有比第一膜更小的厚度和更大的比电阻; （C）其中X和X'各自为-F，-Cl或-CF 3，R f为具有1至10个碳原子的全氟烷基，M（C 1 -C 6） 是氢或碱金属，Y选自-CF 2）x，-O-CF 2）x，其中x和y各自为0至10的整数，Z为-F或 只要B / A + B + C（摩尔比）和C / A + B + C（摩尔比）分别为0.01至0.3和0.05至0.5，则定义如上。

公开(公告)号：US5716504A

公开(公告)日：1998-02-10

申请号：US666213

申请日：1996-06-20

申请人： Yoshihiko Saito ,  Tetsuji Shimohira ,  Haruhisa Miyake

发明人： Yoshihiko Saito ,  Tetsuji Shimohira ,  Haruhisa Miyake

IPC分类号： C08J5/22 ,  C25B1/46 ,  C25B13/00

CPC分类号： C08J5/225 ,  C25B1/46 ,  C08J2327/12

摘要： A cation exchange membrane for electrolysis, which comprises at least 2 layers of fluorine-containing polymer films having sulfonic acid groups, wherein a first layer facing a cathode is made of a three component polymer of the following monomers (A), (B) and (C) and has a thickness of from 50 to 150 .mu.m, and a second layer has a thickness of from 50 to 300 .mu.m: (A) CF.sub.2 =CF(OCF.sub.2 CFCF.sub.3).sub.m O(CF.sub.2).sub.n SO.sub.3 M wherein m=0 or 1, n=1 to 5, and M is hydrogen or an alkali metal, ##STR1## wherein m=0 or 1, and Rf is a C.sub.1-10 perfluoroalkyl group.

摘要翻译： 一种用于电解的阳离子交换膜，其包含至少2层具有磺酸基的含氟聚合物膜，其中面向阴极的第一层由以下单体（A），（B）和（B）的三组分聚合物制成， （C），厚度为50〜150μm，第二层的厚度为50〜300μm：（A）CF2 = CF（OCF2CFCF3）mO（CF2）nSO3M其中m = 0或1 ，n = 1〜5，M为氢或碱金属，（B）CF 2 CF 2，其中m = 0或1，Rf为C1-10全氟烷基。

公开(公告)号：US4872958A

公开(公告)日：1989-10-10

申请号：US206914

申请日：1988-06-15

申请人： Koji Suzuki ,  Tetsuro Tsukada ,  Yoshihiko Saito ,  Kiyotaka Arai ,  Hiroshi Mori

发明人： Koji Suzuki ,  Tetsuro Tsukada ,  Yoshihiko Saito ,  Kiyotaka Arai ,  Hiroshi Mori

IPC分类号： C08J5/22

CPC分类号： C08J5/2281 ,  C08J5/2275 ,  C08J2327/18

摘要： An ion exchange membrane for electrolysis comprising a first layer of a fluoropolymer having carboxylic acid groups as its ion exchange groups and facing a cathode, a second layer of a fluoropolymer having ion exchange groups, a specific resistance lower than that of the first layer and a thickness of at least 50% of the total thickness of the membrane, and a third layer of a fluoropolymer having ion exchange groups, a swelling degree higher by at least 5% than that of the second layer and a specific resistance lower by at least 30 .OMEGA..cm than that of the second layer, the first, second and third layers being laminated in this order.

摘要翻译： 一种用于电解的离子交换膜，包括具有羧酸基团作为其离子交换基团并面向阴极的含氟聚合物的第一层，具有离子交换基团的含氟聚合物的第二层，比第一层低的电阻率， 厚度为膜的总厚度的至少50％，以及具有离子交换基团的含氟聚合物的第三层，其膨胀度比第二层高至少5％，电阻率降低至少30 与第二层的相比，第一层，第二层和第三层按照顺序层压。

公开(公告)号：US07651930B2

公开(公告)日：2010-01-26

申请号：US12146802

申请日：2008-06-26

申请人： Takashi Suzuki ,  Hirokazu Ishida ,  Ichiro Mizushima ,  Yoshio Ozawa ,  Fumiki Aiso ,  Katsuyuki Sekine ,  Takashi Nakao ,  Yoshihiko Saito

发明人： Takashi Suzuki ,  Hirokazu Ishida ,  Ichiro Mizushima ,  Yoshio Ozawa ,  Fumiki Aiso ,  Katsuyuki Sekine ,  Takashi Nakao ,  Yoshihiko Saito

IPC分类号： H01L21/20

CPC分类号： H01L27/115 ,  H01L21/76264 ,  H01L21/84 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/1203 ,  H01L29/66825

摘要： A method of manufacturing a semiconductor storage device includes providing an opening portion in a plurality of positions in an insulating film formed on a silicon substrate, and thereafter forming an amorphous silicon film on the insulating film, in which the opening portions are formed, and in the opening portions. Then, trenches are formed to divide the amorphous silicon film, in the vicinity of a midpoint between adjacent opening portions, into a portion on one opening portion side and a portion on the other opening portion side. Next, the amorphous silicon film, in which the trenches are formed, is annealed and subjected to solid-phase crystallization to form a single crystal with the opening portions used as seeds, and thereby a silicon single-crystal layer is formed. Then, a memory cell array is formed on the silicon single-crystal layer.

摘要翻译： 一种制造半导体存储装置的方法包括在形成在硅衬底上的绝缘膜中的多个位置提供开口部分，然后在其中形成开口部分的绝缘膜上形成非晶硅膜，并且在 开口部。 然后，形成沟槽，将相邻的开口部之间的中点附近的非晶硅膜分割成一个开口部侧的一部分和另一个开口部侧的一部分。 接着，对其中形成沟槽的非晶硅膜进行退火并进行固相结晶以形成具有用作晶种的开口部分的单晶，从而形成硅单晶层。 然后，在硅单晶层上形成存储单元阵列。

公开(公告)号：US07510769B2

公开(公告)日：2009-03-31

申请号：US11074702

申请日：2005-03-09

申请人： Takakazu Hase ,  Yoshihiko Saito ,  Koichi Takahashi ,  Yasushi Kojima ,  Kenichi Shinya ,  Keishi Hamada

发明人： Takakazu Hase ,  Yoshihiko Saito ,  Koichi Takahashi ,  Yasushi Kojima ,  Kenichi Shinya ,  Keishi Hamada

IPC分类号： B32B27/30 ,  B32B27/40

CPC分类号： C09D133/14 ,  C08J7/042 ,  C08J2433/14 ,  Y10T428/31551 ,  Y10T428/31554 ,  Y10T428/31573 ,  Y10T428/31855 ,  Y10T428/31909

摘要： A laminate film has a clear layer (B) comprising an acrylic-based polymer (B1) having at least one longer unsaturated double bond group and at least one shorter unsaturated double bond group as side chains, and having a weight-average molecular weight not less than 50,000 but not more than 500,000, the longer unsaturated double bond group introduced in the acrylic-based polymer (B1) by a long-chain unsaturated carboxylic acid having a molecular weight of 150 or more, and the shorter unsaturated double bond group introduced in the acrylic-based polymer (B1) by a short-chain unsaturated carboxylic acid having a molecular weight of less than 150. Compared with laminate films prepared by spray coating, dip coating, or other coating methods, this laminate film is excellent in processability, coating film properties, and ornamental properties. Thus, an article can be excellently decorated with the laminate film provided by the present invention.

摘要翻译： 层压膜具有透明层（B），其包含具有至少一个较长不饱和双键基团和至少一个较短不饱和双键基团作为侧链的丙烯酸类聚合物（B1），并且具有重均分子量 小于50,000但不超过500,000，通过分子量为150以上的长链不饱和羧酸引入丙烯酸类聚合物（B1）中较长的不饱和双键基团，并引入较短的不饱和双键基团 在丙烯酸​​类聚合物（B1）中，通过分子量小于150的短链不饱和羧酸。与通过喷涂，浸涂或其它涂布方法制备的层压膜相比，该层压膜具有优异的加工性 ，涂膜性质和装饰性。 因此，用本发明提供的层压膜可以很好地装饰物品。

公开(公告)号：US07067870B2

公开(公告)日：2006-06-27

申请号：US10770014

申请日：2004-02-03

申请人： Ichiro Omura ,  Wataru Saito ,  Tsuneo Ogura ,  Hiromichi Ohashi ,  Yoshihiko Saito ,  Kenichi Tokano

发明人： Ichiro Omura ,  Wataru Saito ,  Tsuneo Ogura ,  Hiromichi Ohashi ,  Yoshihiko Saito ,  Kenichi Tokano

IPC分类号： H01L29/76

CPC分类号： H01L29/7802 ,  H01L21/26586 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/405 ,  H01L29/407 ,  H01L29/408 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7722 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872 ,  H01L29/8725

摘要： A semiconductor element of this invention includes a drift layer of a first conductivity type formed on a semiconductor substrate of the first conductivity type, a well layer of a second conductivity type selectively formed in the surface of the drift layer, a source layer of the first conductivity type selectively formed in the surface of the well layer, a trench formed to reach at least the inside of the drift layer from the surface of the source layer through the well layer, a buried electrode formed in the trench through a first insulating film, and a control electrode formed on the drift layer, the well layer, and the source layer through a second insulating film.

公开(公告)号：US20120181598A1

公开(公告)日：2012-07-19

申请号：US13430153

申请日：2012-03-26

申请人： Masayuki ICHIGE ,  Fumitaka Arai ,  Riichiro Shirota ,  Toshitake Yaegashi ,  Yoshio Ozawa ,  Akihito Yamamoto ,  Ichiro Mizushima ,  Yoshihiko Saito

发明人： Masayuki ICHIGE ,  Fumitaka Arai ,  Riichiro Shirota ,  Toshitake Yaegashi ,  Yoshio Ozawa ,  Akihito Yamamoto ,  Ichiro Mizushima ,  Yoshihiko Saito

IPC分类号： H01L29/788

CPC分类号： H01L29/42336 ,  H01L21/28273 ,  H01L27/0207 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/42324 ,  H01L29/7881

摘要： A nonvolatile semiconductor memory includes first and second memory cells having a floating gate and a control gate. The floating gate of the first and second memory cells is comprised a first part, and a second part arranged on the first part, and a width of the second part in an extending direction of the control gate is narrower than that of the first part. A first space between the first parts of the first and second memory cells is filled with one kind of an insulator. The control gate is arranged at a second space between the second parts of the first and second memory cells.

摘要翻译： 非易失性半导体存储器包括具有浮动栅极和控制栅极的第一和第二存储单元。 第一和第二存储单元的浮动栅极包括第一部分和布置在第一部分上的第二部分，并且第二部分在控制栅极的延伸方向上的宽度比第一部分的宽度窄。 第一和第二存储单元的第一部分之间的第一空间填充有一种绝缘体。 控制栅极被布置在第一和第二存储单元的第二部分之间的第二空间处。

公开(公告)号：US07982259B2

公开(公告)日：2011-07-19

申请号：US11687758

申请日：2007-03-19

申请人： Masayuki Ichige ,  Fumitaka Arai ,  Riichiro Shirota ,  Toshitake Yaegashi ,  Yoshio Ozawa ,  Akihito Yamamoto ,  Ichiro Mizushima ,  Yoshihiko Saito

发明人： Masayuki Ichige ,  Fumitaka Arai ,  Riichiro Shirota ,  Toshitake Yaegashi ,  Yoshio Ozawa ,  Akihito Yamamoto ,  Ichiro Mizushima ,  Yoshihiko Saito

IPC分类号： H01L29/788

CPC分类号： H01L29/42336 ,  H01L21/28273 ,  H01L27/0207 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/42324 ,  H01L29/7881

摘要： A nonvolatile semiconductor memory includes first and second memory cells having a floating gate and a control gate. The floating gate of the first and second memory cells is comprised a first part, and a second part arranged on the first part, and a width of the second part in an extending direction of the control gate is narrower than that of the first part. A first space between the first parts of the first and second memory cells is filled with one kind of an insulator. The control gate is arranged at a second space between the second parts of the first and second memory cells.

摘要翻译： 非易失性半导体存储器包括具有浮动栅极和控制栅极的第一和第二存储单元。 第一和第二存储单元的浮动栅极包括第一部分和布置在第一部分上的第二部分，并且第二部分在控制栅极的延伸方向上的宽度比第一部分的宽度窄。 第一和第二存储单元的第一部分之间的第一空间填充有一种绝缘体。 控制栅极被布置在第一和第二存储单元的第二部分之间的第二空间处。

公开(公告)号：US20100112791A1

公开(公告)日：2010-05-06

申请号：US12646563

申请日：2009-12-23

申请人： Takashi Suzuki ,  Hirokazu Ishida ,  Ichiro Mizushima ,  Yoshio Ozawa ,  Fumiki Aiso ,  Katsuyuki Sekine ,  Takashi Nakao ,  Yoshihiko Saito

发明人： Takashi Suzuki ,  Hirokazu Ishida ,  Ichiro Mizushima ,  Yoshio Ozawa ,  Fumiki Aiso ,  Katsuyuki Sekine ,  Takashi Nakao ,  Yoshihiko Saito

IPC分类号： H01L21/20

CPC分类号： H01L27/115 ,  H01L21/76264 ,  H01L21/84 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/1203 ,  H01L29/66825

摘要： A method of manufacturing a semiconductor storage device includes providing an opening portion in a plurality of positions in an insulating film formed on a silicon substrate, and thereafter forming an amorphous silicon film on the insulating film, in which the opening portions are formed, and in the opening portions. Then, trenches are formed to divide the amorphous silicon film, in the vicinity of a midpoint between adjacent opening portions, into a portion on one opening portion side and a portion on the other opening portion side. Next, the amorphous silicon film, in which the trenches are formed, is annealed and subjected to solid-phase crystallization to form a single crystal with the opening portions used as seeds, and thereby a silicon single-crystal layer is formed. Then, a memory cell array is formed on the silicon single-crystal layer.

摘要翻译： 一种制造半导体存储装置的方法包括在形成在硅衬底上的绝缘膜中的多个位置提供开口部分，然后在其中形成开口部分的绝缘膜上形成非晶硅膜，并且在 开口部。 然后，形成沟槽，将相邻的开口部之间的中点附近的非晶硅膜分割成一个开口部侧的一部分和另一个开口部侧的一部分。 接着，对其中形成沟槽的非晶硅膜进行退火并进行固相结晶以形成具有用作晶种的开口部分的单晶，从而形成硅单晶层。 然后，在硅单晶层上形成存储单元阵列。

公开(公告)号：US07531871B2

公开(公告)日：2009-05-12

申请号：US11293301

申请日：2005-12-05

申请人： Ichiro Omura ,  Wataru Saito ,  Tsuneo Ogura ,  Hiromichi Ohashi ,  Yoshihiko Saito ,  Kenichi Tokano

发明人： Ichiro Omura ,  Wataru Saito ,  Tsuneo Ogura ,  Hiromichi Ohashi ,  Yoshihiko Saito ,  Kenichi Tokano

IPC分类号： H01L29/94

CPC分类号： H01L29/7802 ,  H01L21/26586 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/405 ,  H01L29/407 ,  H01L29/408 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7722 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872 ,  H01L29/8725

摘要： A semiconductor element of this invention includes a drift layer of a first conductivity type formed on a semiconductor substrate of the first conductivity type, a well layer of a second conductivity type selectively formed in the surface of the drift layer, a source layer of the first conductivity type selectively formed in the surface of the well layer, a trench formed to reach at least the inside of the drift layer from the surface of the source layer through the well layer, a buried electrode formed in the trench through a first insulating film, and a control electrode formed on the drift layer, the well layer, and the source layer through a second insulating film.