公开(公告)号：US5136171A

公开(公告)日：1992-08-04

申请号：US646361

申请日：1991-01-25

申请人： Ka-Ngo Leung ,  Wulf B. Kunkel ,  Malcom D. Williams ,  Charles M. McKenna

发明人： Ka-Ngo Leung ,  Wulf B. Kunkel ,  Malcom D. Williams ,  Charles M. McKenna

IPC分类号： H01J37/02 ,  H01J37/317

CPC分类号： H01J37/3171 ,  H01J37/026

摘要： Methods and apparatus for neutralization of a workpiece such as a semiconductor wafer in a system wherein a beam of positive ions is applied to the workpiece. The apparatus includes an electron source for generating an electron beam and a magnetic assembly for generating a magnetic field for guiding the electron beam to the workpiece. The electron beam path preferably includes a first section between the electron source and the ion beam and a second section which is coincident with the ion beam. The magnetic assembly generates an axial component of magnetic field along the electron beam path. The magnetic assembly also generates a transverse component of the magnetic field in an elbow region between the first and second sections of the electron beam path. The electron source preferably includes a large area lanthanum hexaboride cathode and an extraction grid positioned in close proximity to the cathode. The apparatus provides a high current, low energy electron beam for neutralizing charge buildup on the workpiece.

摘要翻译： 用于在其中将正离子束施加到工件的系统中的诸如半导体晶片的工件的方法和装置。 该装置包括用于产生电子束的电子源和用于产生用于将电子束引导到工件的磁场的磁性组件。 电子束路径优选地包括电子源和离子束之间的第一部分和与离子束重合的第二部分。 磁性组件沿着电子束路径产生磁场的轴向分量。 磁性组件还在电子束路径的第一和第二部分之间的肘部区域中产生磁场的横向分量。 电子源优选包括大面积六硼化镧阴极和靠近阴极定位的提取栅格。 该装置提供高电流，低能量的电子束，用于中和工件上的电荷积累。

公开(公告)号：US4149084A

公开(公告)日：1979-04-10

申请号：US847645

申请日：1977-11-01

申请人： Herbert L. Arndt, deceased ,  by Margaret L. Arndt, administratrix ,  John H. Keller ,  Charles M. McKenna ,  James R. Winnard

发明人： Herbert L. Arndt, deceased ,  by Margaret L. Arndt, administratrix ,  John H. Keller ,  Charles M. McKenna ,  James R. Winnard

IPC分类号： C23C14/48 ,  H01J37/18 ,  H01J37/317 ,  H01L21/265 ,  G01N23/00

CPC分类号： H01J37/3171 ,  H01J37/18

摘要： In an apparatus for bombarding a target with a beam of ions, an expedient is provided for maintaining the beam line and target under vacuum of 2.times.10.sup.-4 Torr. or lower pressures. The apparatus includes a mass separator, e.g., analyzing magnet adapted to provide selected ions which are to be formed into the desired beam with a trajectory along a selected axis: the target is positioned along this selected axis; the apparatus further includes: a housing extending from the mass separator to the target to enclose the axis and target within a chamber, beam defining means within said chamber traversing said axis and impeding the flow of gas through said chamber, said defining means having a beam defining opening therein at said axis to permit the passage of a selected portion of the beam toward the target, and vacuum drawing means connected to said chamber through an opening in said housing crossing said beam defining means whereby said drawing means removes gas from both sides of said beam defining means.

摘要翻译： 在用离子束束轰击靶的装置中，提供了用于将射束线和目标物保持在2x10-4托的真空下的方法。 或更低的压力。 该装置包括质量分离器，例如，分析磁体，其适于提供将被选择的离子，其将被形成为具有沿着选定轴线的轨迹的期望光束：目标沿该选定轴线定位; 该装置还包括：壳体，其从质量分离器延伸到靶材以将轴线和靶材包围在腔室内，横跨所述轴线的所述腔室内的梁限定装置，并阻止气体流过所述腔室，所述限定装置具有梁 在所述轴线处限定开口，以允许所述梁的选定部分朝向所述目标物通过;以及真空拉拔装置，其通过所述外壳中穿过所述梁限定装置的开口连接到所述腔室，由此所述拉拔装置从 所述光束限定装置。

公开(公告)号：US4135097A

公开(公告)日：1979-01-16

申请号：US794276

申请日：1977-05-05

申请人： John L. Forneris ,  William W. Hicks ,  John H. Keller ,  Charles M. McKenna ,  James A. Seirmarco

发明人： John L. Forneris ,  William W. Hicks ,  John H. Keller ,  Charles M. McKenna ,  James A. Seirmarco

IPC分类号： H01J37/20 ,  G01Q60/00 ,  H01J37/02 ,  H01J37/244 ,  H01J37/317 ,  H01L21/265 ,  A61K27/02

CPC分类号： H01J37/026 ,  H01J37/244 ,  H01J2237/24405 ,  H01J2237/24507

摘要： In an ion beam apparatus a structure for controlling the surface potential of the target comprising an electron source adjacent to the beam for providing electrons to the beam and means between the target and source for inhibiting rectilinear radiations, i.e., electron and other particle and photon radiations between said source and said target. This prevents heating of the target by the electron source and cross-contamination between the source and the target. A further structure is provided for the measurement of the ion beam current while controlling said surface potential of the target which includes: walls adjacent to and electrically insulated from the target and surrounding the beam whereby the walls and target provide a Faraday Cage, means for introducing variable quantities of electrons into the beam within the Faraday Cage, means for measuring the target current, means for combining and measuring the target and wall currents to provide said ion beam current measurement and means for varying the quantities of introduced electrons to control the target current and thereby the target surface potential.

摘要翻译： 在离子束装置中，用于控制靶的表面电位的结构包括与光束相邻的电子源，用于向光束提供电子，并且用于抑制直线辐射的靶和源之间的装置，即电子和其它粒子和光子辐射 在所述源和所述目标之间。 这防止了电子源对靶的加热和源与靶之间的交叉污染。 提供另外的结构用于测量离子束电流，同时控制靶的表面电位，其包括：与靶相邻并与靶电绝缘并围绕光束的壁，由此壁和靶提供法拉第笼，用于引入 可变量的电子进入法拉第笼内的光束，用于测量目标电流的手段，用于组合和测量目标和壁电流以提供所述离子束电流测量的装置，以及用于改变引入的电子的量以控制目标电流的装置 从而达到目标表面电位。

公开(公告)号：US06998625B1

公开(公告)日：2006-02-14

申请号：US09602059

申请日：2000-06-23

申请人： Charles M. McKenna ,  Nicholas R. White ,  Douglas A. Brown ,  Edward Bell ,  Svetlana Radovanov

发明人： Charles M. McKenna ,  Nicholas R. White ,  Douglas A. Brown ,  Edward Bell ,  Svetlana Radovanov

IPC分类号： G21K5/10 ,  H01J37/08

CPC分类号： H01J37/3171 ,  H01J2237/0041 ,  H01J2237/022 ,  H01J2237/047 ,  H01J2237/31705

摘要： An ion implanter includes an ion source for generating an ion beam, an analyzer for separating unwanted components from the ion beam, a first beam transport device for transporting the ion beam through the analyzer at a first transport energy, a first deceleration stage positioned downstream of the analyzer for decelerating the ion beam from the first transport energy to a second transport energy, a beam filter positioned downstream of the first deceleration stage for separating neutral particles from the ion beam, a second beam transport device for transporting the ion beam through the beam filter at the second transport energy, a second deceleration stage positioned downstream of the beam filter for decelerating the ion beam from the second transport energy to a final energy, and a target site for supporting a target for ion implantation. The ion beam is delivered to the target site at the final energy. In a double deceleration mode, the second transport energy is greater than the final energy for highest current at low energy. In an enhanced drift mode, the second transport energy is equal to the final energy for highest beam purity at low energy.

摘要翻译： 离子注入机包括用于产生离子束的离子源，用于从离子束分离不需要的组分的分析器，用于以第一输送能量输送离子束通过分析器的第一束输送装置，位于离子束下游的第一减速阶段 用于将离子束从第一输送能量减速到第二输送能量的分析器，位于第一减速阶段下游的用于从离子束分离中性粒子的光束过滤器，用于将离子束传送通过束 在所述第二输送能量下进行过滤，所述第二减速阶段位于所述束过滤器的下游，用于将所述离子束从所述第二输送能量减速到最终能量，以及用于支撑用于离子注入的靶的靶位点。 离子束以最终能量传递到目标位置。 在双重减速模式中，第二传输能量大于最低能量时的最终能量。 在增强的漂移模式中，第二传输能量等于在低能量下最高光束纯度的最终能量。

公开(公告)号：US4757208A

公开(公告)日：1988-07-12

申请号：US837127

申请日：1986-03-07

申请人： Charles M. McKenna ,  James E. Wood ,  John L. Bartelt ,  Ross D. Olney ,  J. William Ward ,  Charles W. Slayman

发明人： Charles M. McKenna ,  James E. Wood ,  John L. Bartelt ,  Ross D. Olney ,  J. William Ward ,  Charles W. Slayman

IPC分类号： H01J37/20 ,  H01J37/08 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027 ,  H01L21/30

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/055 ,  H01J2237/1516 ,  H01J2237/303 ,  H01J2237/31755 ,  H01J2237/31788

摘要： A masked ion beam lithography (MIBL) system and method is disclosed which is considerably more compact and economical than prior ion implantation devices. An H.sup.+ ion beam is extracted from a source in the form of an angularly expanding beam, and is transmitted through two lenses that sequentially accelerate the ions to energies in the range of 200-300 keV. The first lens focuses the beam so that it emerges from a crossover point with an amplified angular divergence at least three times the divergence of the initial beam, thereby considerably reducing the necessary column length. The second lens collimates the beam so that it can be directed onto a mask to expose resist on an underlying semiconductor substrate. A series of extraction electrodes are used to provide an initial point source beam with a desired angular expansion, and a specially designed sector magnet is positioned between the extraction mechanism and the first lens to remove particles heavier than H.sup.+ from the beam. Voltage ratios across the lenses and extraction electrodes can be varied in tandem, permitting control over the final beam energy by a simple voltage adjustment. The beam is aligned with the column axis and then steered into alignment with the mask channeling axis by a pair of octupole lenses.

摘要翻译： 公开了掩蔽离子束光刻（MIBL）系统和方法，其比先前的离子注入装置更紧凑和经济。 H +离子束以角度扩展的光束形式从光源中提取出来，并通过两个透镜传播，该透镜将离子依次加速到200-300keV范围内的能量。 第一透镜聚焦光束，使得其从具有放大的角度发散的交叉点出现至少是初始光束的发散的三倍，从而显着地减少必要的色谱柱长度。 第二透镜使光束准直，使得其可以被引导到掩模上以在下面的半导体衬底上曝光抗蚀剂。 一系列提取电极用于提供具有所需角度膨胀的初始点源光束，并且特殊设计的扇形磁体位于提取机构和第一透镜之间，以从光束去除比H +更重的颗粒。 透镜和引出电极之间的电压比可以串联变化，允许通过简单的电压调节来控制最终的束能量。 光束与列轴对准，然后通过一对八极透镜转向与掩模引导轴对准。

公开(公告)号：US4556798A

公开(公告)日：1985-12-03

申请号：US512879

申请日：1983-07-12

申请人： Charles M. McKenna ,  William M. Clark, Jr. ,  Robert L. Seliger

发明人： Charles M. McKenna ,  William M. Clark, Jr. ,  Robert L. Seliger

IPC分类号： H01J37/317 ,  H01J37/30 ,  H01J37/305 ,  H01L21/027 ,  H01L21/30

CPC分类号： H01J37/3007

摘要： Two lens focused ion beam column (10) has an accelerating lens (20) which carries a potential to focus an image of the liquid metal ion source (14) on the mass analyzer slit (26) with a magnification of about unity. Munro lens (36) accelerates the beam of selected ion species and demagnifies the image through a long working distance to provide an ion writing spot of less than about 1000 .ANG. size.

摘要翻译： 两个透镜聚焦离子束柱（10）具有加速透镜（20），该加速透镜具有将液体金属离子源（14）的图像以大致一致的放大率聚焦在质量分析器狭缝（26）上的潜力。 Munro透镜（36）加速选定离子种类的光束，并通过长工作距离使图像缩小，以提供小于约1000 ANGSTROM大小的离子写入点。

公开(公告)号：US4158589A

公开(公告)日：1979-06-19

申请号：US865811

申请日：1977-12-30

申请人： John H. Keller ,  Charles M. McKenna

发明人： John H. Keller ,  Charles M. McKenna

IPC分类号： H01J27/14 ,  H01J37/08 ,  H01J37/305 ,  H01L21/302 ,  B01K1/00 ,  C23F1/02

CPC分类号： H01J37/3053 ,  H01J27/14 ,  H01J37/08

摘要： Process and apparatus for use in extracting negative ions from a plasma which is particularly useful in reactive ion etching of metals, silicon and oxides and nitrides of silicon in the manufacture of semiconductor devices. A magnetic field is employed in the apparatus and, herein, is created by a novel grid, through which negative ions pass to a surface, such as one to be etched, while free electrons are prevented from passing through the grid and out of the plasma. The novel process utilizes negative ions which have a large fraction in the atomic state.

摘要翻译： 用于从等离子体中提取负离子的方法和装置，其特别可用于半导体器件制造中的金属，硅和氧化物和氮化物的反应离子蚀刻。 在该装置中采用磁场，并且在这里由新颖的栅格产生，负离子通过该栅极传递到诸如被蚀刻的表面，同时防止自由电子通过栅极并离开等离子体 。 该新方法利用在原子状态下具有大部分的负离子。

公开(公告)号：US06653642B2

公开(公告)日：2003-11-25

申请号：US09779243

申请日：2001-02-08

申请人： Bjorn O. Pedersen ,  Peter E. Maciejowski ,  William G. Goodenough ,  Paul J. Murphy ,  Charles M. McKenna

发明人： Bjorn O. Pedersen ,  Peter E. Maciejowski ,  William G. Goodenough ,  Paul J. Murphy ,  Charles M. McKenna

IPC分类号： H01J37317

CPC分类号： H01J37/3171 ,  H01J2237/04735 ,  H05H5/06

摘要： Methods and apparatus are provided for efficiently operating an ion implanter which includes a charged particle accelerator in a high energy mode and in a low energy mode. The charged particle accelerator includes a high voltage power supply, an accelerator column coupled to the high voltage power supply and a switching assembly. The accelerator column includes a plurality of accelerator electrodes. The high voltage power supply is disabled from energizing the accelerator column in the low energy mode. The switching assembly includes switching elements for electrically connecting the accelerator electrodes to a reference potential in the low energy mode and for electrically isolating the accelerator electrodes from the reference potential in the high energy mode. The switching assembly prevents positive potentials on the accelerator electrodes and thus minimizes space charge expansion of the beam when transporting positive ion beams in the low energy mode.

摘要翻译： 提供了用于有效地操作离子注入机的方法和装置，其包括高能量模式和低能量模式的带电粒子加速器。 带电粒子加速器包括高压电源，耦合到高压电源的加速器柱和开关组件。 加速器柱包括多个加速器电极。 在低能量模式下，高压电源禁止加速器柱通电。 开关组件包括用于将加速器电极电连接到低能量模式中的参考电位并且用于将加速器电极与高​​能量模式中的参考电位电隔离的开关元件。 开关组件防止加速器电极上的正电位，从而当以低能量模式传输正离子束时，使光束的空间电荷膨胀最小化。

公开(公告)号：US4752692A

公开(公告)日：1988-06-21

申请号：US727701

申请日：1985-04-26

申请人： Jerg B. Jergenson ,  Charles M. McKenna

发明人： Jerg B. Jergenson ,  Charles M. McKenna

IPC分类号： H01J27/26 ,  H01J27/02

CPC分类号： H01J27/26

摘要： U-shaped billet (52) has a slot (54) cut therein for receipt of a slip of insulator material (56). This body is machined on its front end (64) to produce a narrow bridge (66) of controlled cross-sectional area. Emitter needle (78) is positioned in a bore through the bridge to be heated by current through the bridge. The ion emitter body is rigid and strong to hold the emitter needle in the proper location.

摘要翻译： U形坯料（52）具有在其中切割的槽（54），用于接收绝缘体材料（56）的滑移。 该主体在其前端（64）上加工，以产生受控横截面积的窄桥（66）。 发射器针（78）定位在穿过桥的孔中，以通过电流通过桥被加热。 离子发射体是刚性和坚固的，以将发射针保持在适当的位置。

公开(公告)号：US4687940A

公开(公告)日：1987-08-18

申请号：US842103

申请日：1986-03-20

申请人： J. William Ward ,  John L. Bartelt ,  Robert L. Seliger ,  Charles M. McKenna

发明人： J. William Ward ,  John L. Bartelt ,  Robert L. Seliger ,  Charles M. McKenna

IPC分类号： H01J37/30 ,  H01J37/317

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3174 ,  H01J2237/0458 ,  H01J2237/31711 ,  H01J2237/31713 ,  H01J2237/31755

摘要： An ion beam microfabrication system is described which is capable of operating in either a flooded beam mode, in which a relatively high current beam is used to yield a rapid throughput, or in a low current, high resolution focused ion beam mode. With a focused beam a small, relatively low current ion spot is deflected in a predetermined pattern over a portion of the wafer to produce more detailed patterning that is not achievable in the flooded beam mode. A lens is added to the beam column to modify the beam collimation between the focused and flooded modes, and switching between modes is accomplished by simply actuating or de-actuating the lens. The beam is formed with a larger acceptance angle and total current in the flooded than the focused mode.

摘要翻译： 描述了能够以淹没波束模式操作的离子束微细加工系统，其中使用相对高的电流束以产生快速通量，或者以低电流，高分辨率聚焦离子束模式。 利用聚焦光束，在晶片的一部分上以预定图案偏转小的相对低电流的离子斑点以产生在淹没光束模式中不可实现的更详细的图案化。 将透镜添加到光束列以修改聚焦和淹没模式之间的光束准直，并且通过简单地致动或去激活透镜来实现模式之间的切换。 在聚焦模式下，波束形成在较大的接收角和淹没中的总电流。