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    Photonic switching method and photonic switch utilizing same
    1.
    发明授权
    Photonic switching method and photonic switch utilizing same 失效
    光子切换方法和利用它的光子开关

    公开(公告)号：US5636045A

    公开(公告)日：1997-06-03

    申请号：US489939

    申请日：1995-06-13

    申请人： Hideaki Okayama ,  Masato Kawahara ,  Saeko Oshiba ,  Yoshio Kawai

    发明人： Hideaki Okayama ,  Masato Kawahara ,  Saeko Oshiba ,  Yoshio Kawai

    IPC分类号： H04B10/27 ,  H04B10/524 ,  H04B10/572 ,  H04B10/58 ,  H04J14/08 ,  H04Q3/52 ,  H04Q11/00 ,  H04Q11/02 ,  H04B10/20

    CPC分类号： H04J14/08 ,  H04Q11/0003 ,  H04Q11/0066 ,  H04Q2011/0015 ,  H04Q2011/002 ,  H04Q2011/0045

    摘要： A photonic switching method and a photonic switch utilizing the method are disclosed. Input electrical signals Ea.about.Ed are input through plural input ports 21a.about.21d are converted into optical signals with the pulse intervals of these input electrical signals being preserved unchanged. The converted optical signals are timing adjusted within the pulse interval and multiplexed in such a manner that these optical signals do not overlap with each other on the time axis. The resulting multiplexed optical signals are transferred to output ports 19a.about.19d. An optical signal, from among the multiplexed optical signals, which should be output at a target output port is separated by utilizing a mutual optical interactional function, for example, a four optical wave mixture.

    摘要翻译： 公开了一种利用该方法的光子切换方法和光子开关。 输入电信号通过多个输入端口21a输入差分输入21D被转换为光信号，这些输入电信号的脉冲间隔保持不变。 转换的光信号在脉冲间隔内进行定时调整，并以这些光信号在时间轴上彼此不重叠的方式多路复用。 所产生的复用光信号被传送到输出端口19a差分19d。 应当在目标输出端口输出的多路复用光信号中的光信号通过利用相互光学相互作用功能例如四个光波混合来分离。

    Patterning process
    2.
    发明授权
    Patterning process 有权
    图案化过程

    公开(公告)号：US08617800B2

    公开(公告)日：2013-12-31

    申请号：US12458884

    申请日：2009-07-27

    申请人： Jun Hatakeyama ,  Kazuhiro Katayama ,  Yoshio Kawai

    发明人： Jun Hatakeyama ,  Kazuhiro Katayama ,  Yoshio Kawai

    IPC分类号： G03F7/26

    CPC分类号： H01L21/0332 ,  H01L21/0275 ,  H01L21/0337

    摘要： There is disclosed a patterning process including steps of at least: forming a photoresist film on a substrate; exposing the photoresist film to a high energy beam; developing by using a developer; forming a photoresist pattern; and then forming a spacer on the photoresist pattern sidewall, thereby forming a pattern on the substrate, a patterning process, wherein at least the photoresist pattern having the hardness of 0.4 GPa or more or the Young's modulus of 9.2 GPa or more as a film strength is formed, and a pattern is formed on the substrate by forming a silicon oxide film as the spacer on the photoresist pattern sidewall. There can be provided a patterning process without causing a deformation of a resist pattern and an increase in LWR at the time of forming a silicon oxide film on a photoresist pattern.

    摘要翻译： 公开了一种图案化工艺，其包括至少在衬底上形成光致抗蚀剂膜的步骤; 将光致抗蚀剂膜暴露于高能量束; 使用开发商开发; 形成光致抗蚀剂图案; 然后在光致抗蚀剂图案侧壁上形成间隔物，从而在基板上形成图案，图案化工艺，其中至少具有0.4GPa或更高的硬度的光刻胶图案或9.2GPa或更大的杨氏模量作为膜强度 并且通过在光致抗蚀剂图案侧壁上形成作为间隔物的氧化硅膜在衬底上形成图案。 可以提供图案化工艺，而不会在抗蚀剂图案上形成氧化硅膜时引起抗蚀剂图案的变形和增加的LWR。

    Pattern forming process and resist-modifying composition
    3.
    发明授权
    Pattern forming process and resist-modifying composition 有权
    图案形成工艺和抗蚀剂改性组合物

    公开(公告)号：US08367310B2

    公开(公告)日：2013-02-05

    申请号：US12708196

    申请日：2010-02-18

    申请人： Takeru Watanabe ,  Masashi Iio ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Yoshio Kawai

    发明人： Takeru Watanabe ,  Masashi Iio ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Yoshio Kawai

    IPC分类号： G03F7/26

    CPC分类号： G03F7/0397 ,  G03F7/0035 ,  G03F7/40

    摘要： A patterning process includes (1) coating and baking a first positive resist composition to form a first resist film, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) applying a resist-modifying composition to the first resist pattern and heating to modify the first resist pattern, (3) coating and baking a second positive resist composition to form a second resist film, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The modified first resist film has a contact angle with pure water of 50°-85°.

    摘要翻译： 图案化工艺包括（1）涂覆和烘烤第一正性抗蚀剂组合物以形成第一抗蚀剂膜，曝光，曝光后烘烤和碱显影以形成第一抗蚀剂图案，（2）将抗蚀剂改性组合物施加到 第一抗蚀剂图案和加热以修饰第一抗蚀剂图案，（3）涂覆和烘烤第二正性抗蚀剂组合物以形成第二抗蚀剂膜，曝光，曝光后烘烤和碱显影以形成第二抗蚀剂图案。 改性的第一抗蚀剂膜与纯水的接触角为50°-85°。

    Novel polymer, positive resist composition, and patterning process using the same
    10.
    发明申请
    Novel polymer, positive resist composition, and patterning process using the same 有权
    新型聚合物，正性抗蚀剂组合物和使用其的图案化工艺

    公开(公告)号：US20050079440A1

    公开(公告)日：2005-04-14

    申请号：US10945397

    申请日：2004-09-21

    申请人： Jun Hatakeyama ,  Yuji Harada ,  Yoshio Kawai

    发明人： Jun Hatakeyama ,  Yuji Harada ,  Yoshio Kawai

    IPC分类号： C08F220/18 ,  C08F220/24 ,  C08F220/28 ,  G03C1/76 ,  G03F7/004 ,  G03F7/039

    CPC分类号： G03F7/0397 ,  C08F220/18 ,  C08F220/24 ,  C08F220/28 ,  G03F7/0046 ,  Y10S430/111

    摘要： There is disclosed a polymer which at least has the repeating unit represented by the following general formula (1a), and the repeating unit represented by the following general formula (1b) and/or the repeating unit represented by the following general formula (1c), and a positive resist composition comprising the polymer as a base resin. There can be provided a positive resist composition having high sensitivity and high resolution on exposure to a high energy beam, wherein line edge roughness is reduced since swelling at the time of development is suppressed, and the residue after development is little.

    摘要翻译： 公开了至少具有下述通式（1a）表示的重复单元和下述通式（1b）表示的重复单元和/或下述通式（1c）表示的重复单元的聚合物， 以及包含该聚合物作为基础树脂的正性抗蚀剂组合物。 可以提供在暴露于高能量束时具有高灵敏度和高分辨率的正性抗蚀剂组合物，其中由于在显影时的膨胀被抑制，线边缘粗糙度降低，并且显影后的残留物很小。