公开(公告)号：US20090027372A1

公开(公告)日：2009-01-29

申请号：US12176732

申请日：2008-07-21

申请人： Hideaki SHISHIDO ,  Atsushi Hirose

发明人： Hideaki SHISHIDO ,  Atsushi Hirose

IPC分类号： G06F3/038

CPC分类号： H01L27/1214 ,  G01J1/02 ,  G01J1/0209 ,  G01J1/42 ,  G01J1/44 ,  G05F3/262 ,  G09G3/3241 ,  H01L27/1266 ,  H01L27/14609 ,  H01L27/14687 ,  H04N5/2351

摘要： A plurality of transistors in which ratios of a channel length L to a channel width W, α=W/L, are different from each other is provided in parallel as output side transistors 105a to 105c in a current mirror circuit 101 which amplifies a photocurrent of a photoelectric conversion device and an internal resistor is connected to each of the output side transistors 105a to 105c in series. The sum of currents which flow through the plurality of transistors and the internal resistor is output, whereby a transistor with large amount of α can be driven in a linear range with low illuminance, and a transistor with small amount of α can be driven in a linear range with high illuminance, so that applicable illuminance range of the photoelectric conversion device can be widened.

摘要翻译： 在通过放大光电流的电流镜电路101中，作为输出侧晶体管105a〜105c并联设置多个晶体管，其中沟道长度L与沟道宽度W，α= W / L的比例彼此不同 的一个光电转换装置和一个内部电阻器串联连接到每个输出侧晶体管105a至105c。 输出流过多个晶体管的电流和内部电阻器的总和，由此可以以低照度在线性范围内驱动具有大量α的晶体管，并且可以在a中驱动具有少量α的晶体管 具有高照度的线性范围，可以扩大光电转换装置的适用照度范围。

公开(公告)号：US20120211749A1

公开(公告)日：2012-08-23

申请号：US13461940

申请日：2012-05-02

申请人： Osamu FUKUOKA ,  Masahiko HAYAKAWA ,  Hideaki SHISHIDO

发明人： Osamu FUKUOKA ,  Masahiko HAYAKAWA ,  Hideaki SHISHIDO

IPC分类号： H01L31/0376 ,  H01L31/0368

CPC分类号： H01L27/1262 ,  H01L27/0255 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1277

摘要： To improve the performance of a protection circuit including a diode formed using a semiconductor film. A protection circuit is inserted between two input/output terminals. The protection circuit includes a diode which is formed over an insulating surface and is formed using a semiconductor film. Contact holes for connecting an n-type impurity region and a p-type impurity region of the diode to a first conductive film in the protection circuit are distributed over the entire impurity regions. Further, contact holes for connecting the first conductive film and a second conductive film in the protection circuit are dispersively formed over the semiconductor film. By forming the contact holes in this manner, wiring resistance between the diode and a terminal can be reduced and the entire semiconductor film of the diode can be effectively serve as a rectifier element.

摘要翻译： 提高包括使用半导体膜形成的二极管的保护电路的性能。 一个保护电路插在两个输入/输出端子之间。 保护电路包括形成在绝缘表面上并使用半导体膜形成的二极管。 用于将二极管的n型杂质区域和p型杂质区域连接到保护电路中的第一导电膜的接触孔分布在整个杂质区域上。 此外，用于连接保护电路中的第一导电膜和第二导电膜的接触孔分散地形成在半导体膜上。 通过以这种方式形成接触孔，可以减小二极管和端子之间的布线电阻，并且二极管的整个半导体膜可以有效地用作整流元件。

公开(公告)号：US20090289174A1

公开(公告)日：2009-11-26

申请号：US12467001

申请日：2009-05-15

申请人： Jun KOYAMA ,  Yoshifumi TANADA ,  Hideaki SHISHIDO ,  Seiko AMANO ,  Makoto YANAGISAWA

发明人： Jun KOYAMA ,  Yoshifumi TANADA ,  Hideaki SHISHIDO ,  Seiko AMANO ,  Makoto YANAGISAWA

IPC分类号： H03K17/78

CPC分类号： H04N5/37455 ,  G01J1/4204 ,  G01J1/46

摘要： Objects are to accumulate electric charge in a capacitor so that light intensity can be detected even when the amount of incident light is small, and to operate a photoelectric conversion device without increasing the number of elements such as a constant current source or a switch. The photoelectric conversion device includes a photoelectric conversion circuit, a capacitor, and a comparator for comparing a potential of one electrode of the capacitor with a second potential. The photoelectric conversion circuit includes a photoelectric conversion element and an amplifier circuit for amplifying an output current from the photoelectric conversion element In the capacitor, a first potential is supplied through a first switch, and charging or discharging is performed through a second switch in accordance with the current amplified by the amplifier circuit.

摘要翻译： 目的是在电容器中蓄积电荷，使得即使入射光量较小也能够检测光强度，并且在不增加诸如恒流源或开关的元件数量的情况下操作光电转换装置。 光电转换装置包括光电转换电路，电容器和用于将电容器的一个电极的电位与第二电位进行比较的比较器。 光电转换电路包括光电转换元件和用于放大来自电容器中的光电转换元件的输出电流的放大电路，通过第一开关提供第一电位，并且通过第二开关执行充电或放电 电流由放大电路放大。

公开(公告)号：US20090230292A1

公开(公告)日：2009-09-17

申请号：US12398465

申请日：2009-03-05

申请人： Jun KOYAMA ,  Yoshifumi TANADA ,  Hideaki SHISHIDO

发明人： Jun KOYAMA ,  Yoshifumi TANADA ,  Hideaki SHISHIDO

IPC分类号： H01J40/14 ,  H02H9/04

CPC分类号： H02H9/04 ,  H02H7/20 ,  Y02E10/56

摘要： A protection circuit and a photoelectric conversion device are provided, each of which includes a first wiring, a second wiring, a first switch, a second switch, a capacitor, and a comparing circuit configured to generate a signal corresponding to a potential of the first wiring and a potential of the second wiring, and supply the signal to the first switch and the second switch. The first wiring is electrically connected to a first terminal of the first switch, and the second wiring is electrically connected to a first terminal of the second switch. A second terminal of the first switch is electrically connected to a first electrode of the capacitor, and a second terminal of the second switch is electrically connected to a second electrode of the capacitor.

摘要翻译： 提供一种保护电路和光电转换装置，每个保护电路和光电转换装置包括第一布线，第二布线，第一开关，第二开关，电容器和比较电路，其被配置为产生对应于第一布线 布线和第二布线的电位，并将信号提供给第一开关和第二开关。 第一布线电连接到第一开关的第一端子，第二布线电连接到第二开关的第一端子。 第一开关的第二端子电连接到电容器的第一电极，第二开关的第二端子电连接到电容器的第二电极。

公开(公告)号：US20120154456A1

公开(公告)日：2012-06-21

申请号：US13368604

申请日：2012-02-08

申请人： Hajime KIMURA ,  Hideaki SHISHIDO ,  Shunpei YAMAZAKI

发明人： Hajime KIMURA ,  Hideaki SHISHIDO ,  Shunpei YAMAZAKI

IPC分类号： G09G5/00 ,  G09G5/10

CPC分类号： H01L27/1225 ,  G09G3/2022 ,  G09G3/2074 ,  G09G3/288 ,  G09G3/3233 ,  G09G2300/0443 ,  G09G2300/0452 ,  G09G2300/0465 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2300/0866 ,  G09G2310/0262 ,  G09G2320/0261 ,  G09G2320/0266 ,  G09G2330/021

摘要： A semiconductor device including a plurality of pixels over a substrate and a display medium including an electronic ink over the substrate, in which at least one pixel of the plurality of pixels comprises first and second subpixels each of which comprises a transistor that comprises an oxide semiconductor including indium, and in which one image of at least one of the plurality of pixels is displayed by a plurality of signals, is provided.

摘要翻译： 一种在衬底上包括多个像素的半导体器件以及包括在衬底上的电子墨水的显示介质，其中多个像素中的至少一个像素包括第一和第二子像素，每个子像素包括包含氧化物半导体 包括铟，并且其中通过多个信号显示多个像素中的至少一个的一个图像。

公开(公告)号：US20110068334A1

公开(公告)日：2011-03-24

申请号：US12887606

申请日：2010-09-22

申请人： Shunpei YAMAZAKI ,  Hideaki SHISHIDO

发明人： Shunpei YAMAZAKI ,  Hideaki SHISHIDO

IPC分类号： H01L33/28

CPC分类号： H01L27/14603 ,  B82Y30/00 ,  G02F1/133707 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/1345 ,  G02F1/136204 ,  G02F1/13624 ,  G02F2001/133388 ,  G02F2001/133622 ,  G02F2001/13606 ,  G02F2001/136231 ,  G02F2001/136236 ,  G02F2001/13629 ,  G02F2001/136295 ,  G02F2202/16 ,  G02F2202/36 ,  H01L27/1225 ,  H01L29/78636 ,  H01L29/7869

摘要： Disclosed is a semiconductor device which consumes low power and has high reliability and tolerance for electrostatic discharge. The semiconductor device includes, over a first substrate, a pixel portion and a driver circuit portion both of which have a thin film transistor having an oxide semiconductor layer. The semiconductor device further possesses a second substrate to which a first counter electrode layer and a second counter electrode layer are provided, and a liquid crystal layer is interposed between the first and second substrates. The first and second counter electrode layers are provided over the pixel portion and the driver circuit portion, respectively, and the second counter electrode layer has the same potential as the first counter electrode layer.

摘要翻译： 公开了一种消耗低功率并具有高静电放电可靠性和耐受性的半导体器件。 半导体器件包括在第一衬底上的像素部分和驱动器电路部分，它们都具有具有氧化物半导体层的薄膜晶体管。 半导体器件还具有设置第一对置电极层和第二对电极层的第二基板，并且在第一和第二基板之间插入液晶层。 第一和第二对电极层分别设置在像素部分和驱动电路部分上，第二对电极层具有与第一对电极层相同的电位。

公开(公告)号：US20090321869A1

公开(公告)日：2009-12-31

申请号：US12479291

申请日：2009-06-05

申请人： Osamu FUKUOKA ,  Masahiko HAYAKAWA ,  Hideaki SHISHIDO

发明人： Osamu FUKUOKA ,  Masahiko HAYAKAWA ,  Hideaki SHISHIDO

IPC分类号： H01L31/103

CPC分类号： H01L27/14692 ,  H01L24/06 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14636 ,  H01L2924/12043 ,  H01L2924/15788 ,  H01L2924/00

摘要： A semiconductor device has a structure including the first semiconductor region 103 which is provided in the first terminal portion 100 and includes the first n-type impurity region 106, the first resistance region 107 provided at an inner periphery portion of the first n-type impurity region 106 in a plane view, and the first p-type impurity region 108 provided at an inner periphery portion of the first resistance region 107 in the plane view, and the second semiconductor region 104 which is provided in the second terminal portion 101 and includes the second p-type impurity region 109, the second resistance region 110 provided at an inner periphery portion of the second p-type impurity region 109 in the plane view, and the second n-type impurity region 111 provided at an inner periphery portion of the second resistance region 110 in the plane view.

摘要翻译： 半导体器件具有包括设置在第一端子部分100中并包括第一n型杂质区域106的第一半导体区域103的结构，设置在第一n型杂质的内周部分的第一电阻区域107 在俯视图中设置在第一电阻区域107的内周部的第一p型杂质区域108和设置在第二端子部101中的第二半导体区域104， 第二p型杂质区域109，在平面图中设置在第二p型杂质区域109的内周部分的第二电阻区域110和设置在第二p型杂质区域109的内周部分的第二n型杂质区域111 平面图中的第二电阻区域110。

公开(公告)号：US20080143653A1

公开(公告)日：2008-06-19

申请号：US11951817

申请日：2007-12-06

申请人： Hideaki SHISHIDO

发明人： Hideaki SHISHIDO

IPC分类号： G09G3/30

CPC分类号： G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0262 ,  G09G2320/043 ,  H01L27/3265 ,  H01L2251/5315 ,  H01L2251/5323

摘要： A display device which can compensate for variations of the threshold voltage of transistors and suppress variations in luminance, and a driving method thereof are provided. Current is supplied to a light emitting element and light is emitted from the light emitting element by following steps: in the first period initial voltage is stored in a storage capacitor; in the second period, voltage based on video signal voltage and the threshold voltage of the transistor is stored in the storage capacitor; and in the third period, the voltage stored in the storage capacitor in the second period is applied to a gate electrode of the transistor. By these operation processes, the current which compensates the effect of the variations of the threshold voltage of the transistor can be supplied to the light emitting element. Therefore, variations in luminance are suppressed.

摘要翻译： 提供了能够补偿晶体管的阈值电压的变化并抑制亮度变化的显示装置及其驱动方法。 电流被提供给发光元件，并且通过以下步骤从发光元件发射光：在第一周期中，初始电压被存储在存储电容器中; 在第二时段中，基于视频信号电压和晶体管的阈值电压的电压被存储在存储电容器中; 并且在第三时段中，将在第二周期中存储在存储电容器中的电压施加到晶体管的栅电极。 通过这些操作处理，可以向发光元件提供补偿晶体管的阈值电压的变化的影响的电流。 因此，抑制亮度的变化。

公开(公告)号：US20070063993A1

公开(公告)日：2007-03-22

申请号：US11530654

申请日：2006-09-11

申请人： Hideaki SHISHIDO

发明人： Hideaki SHISHIDO

IPC分类号： G09G5/00 ,  H01L33/00

CPC分类号： H01L27/1225 ,  G09G3/3241 ,  G09G2300/0465 ,  G09G2300/0809 ,  G09G2300/0819 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2310/0251 ,  G09G2310/0256 ,  G09G2310/0262 ,  G09G2320/0223 ,  G09G2320/043 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/127 ,  H01L27/13

摘要： One feature of the present invention includes first to third steps of holding a voltage, corresponding to a difference between a voltage applied to a first power supply line and a threshold voltage of a first transistor, between both electrodes of first and second storage capacitors; holding a voltage, corresponding to a difference between a voltage applied to the first power supply line and a gate-source voltage of the first transistor, which is necessary to supply a light-emitting element with a current equivalent to a video signal current inputted into a signal line, between both the electrodes of the second storage capacitor; and applying a voltage based on the voltage held in the first and second storage capacitors in the first and second steps to a gate electrode of the first transistor; therefore, a current is supplied to the light-emitting element through the first transistor.

摘要翻译： 本发明的一个特征包括在第一和第二存储电容器的两个电极之间保持对应于施加到第一电源线的电压与第一晶体管的阈值电压之间的差的电压的第一至第三步骤; 保持对应于施加到第一电源线的电压与第一晶体管的栅极 - 源极电压之间的差的电压，该电压是为了向发射元件提供与输入的视频信号电流相当的电流所必需的 在第二存储电容器的两个电极之间的信号线; 以及将第一和第二步骤中保持在第一和第二存储电容器中的电压的电压施加到第一晶体管的栅电极; 因此，通过第一晶体管将电流提供给发光元件。

公开(公告)号：US20100245219A1

公开(公告)日：2010-09-30

申请号：US12813885

申请日：2010-06-11

申请人： Hideaki SHISHIDO

发明人： Hideaki SHISHIDO

IPC分类号： G09G3/30

CPC分类号： H01L27/1225 ,  G09G3/3241 ,  G09G2300/0465 ,  G09G2300/0809 ,  G09G2300/0819 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2310/0251 ,  G09G2310/0256 ,  G09G2310/0262 ,  G09G2320/0223 ,  G09G2320/043 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/127 ,  H01L27/13

摘要： One feature of the present invention includes first to third steps of holding a voltage, corresponding to a difference between a voltage applied to a first power supply line and a threshold voltage of a first transistor, between both electrodes of first and second storage capacitors; holding a voltage, corresponding to a difference between a voltage applied to the first power supply line and a gate-source voltage of the first transistor, which is necessary to supply a light-emitting element with a current equivalent to a video signal current inputted into a signal line, between both the electrodes of the second storage capacitor; and applying a voltage based on the voltage held in the first and second storage capacitors in the first and second steps to a gate electrode of the first transistor; therefore, a current is supplied to the light-emitting element through the first transistor.

摘要翻译： 本发明的一个特征包括在第一和第二存储电容器的两个电极之间保持对应于施加到第一电源线的电压与第一晶体管的阈值电压之间的差的电压的第一至第三步骤; 保持对应于施加到第一电源线的电压与第一晶体管的栅极 - 源极电压之间的差的电压，该电压是为了向发射元件提供与输入的视频信号电流相当的电流所必需的 在第二存储电容器的两个电极之间的信号线; 以及将第一和第二步骤中保持在第一和第二存储电容器中的电压的电压施加到第一晶体管的栅电极; 因此，通过第一晶体管将电流提供给发光元件。