公开(公告)号：US20070264840A1

公开(公告)日：2007-11-15

申请号：US11663179

申请日：2005-10-14

申请人： Hideharu Itatani ,  Hidehiro Yanai ,  Sadayoshi Horii ,  Atsushi Sano

发明人： Hideharu Itatani ,  Hidehiro Yanai ,  Sadayoshi Horii ,  Atsushi Sano

IPC分类号： H01L21/00 ,  B05C13/00

CPC分类号： C23C16/4412

摘要： To prevent particles from generating by reducing a contact-gas area and improve a purge efficiency by reducing a flow passage capacity. There is provided a substrate processing apparatus, comprising a processing chamber 1 for processing a substrate 2; a substrate carrying port 10 provided on a sidewall of the processing chamber 1, for carrying-in/carrying-out the substrate 2 to/from the processing chamber 1; a holder provided so as to be lifted and lowered in the processing chamber 1, for holding the substrate 2; supply ports 3 and 4 provided above the holder, for supplying gas into the processing chamber 1; an exhaust duct 35 provided on the peripheral part of the holder, for exhausting the gas supplied into the processing chamber 1; and an exhaust port 5 provided below an upper surface of the exhaust duct 35 when the substrate is processed, for exhausting the gas discharged by the exhaust duct 35 outside the processing chamber 1, wherein at least a part of a member constituting the exhaust duct 35 is provided so as to be lifted and lowered.

摘要翻译： 为了防止通过减少接触气体区域而产生颗粒，并通过降低流通能力来提高吹扫效率。 提供了一种基板处理装置，包括：处理基板2的处理室1; 设置在处理室1的侧壁上的用于将基板2输入/移出处理室1的基板输送口10; 设置成在处理室1中升降的保持件，用于保持基板2; 供应口3和4设置在保持器上方，用于将气体供应到处理室1中; 设置在保持器的周边部分上的用于排出供给到处理室1中的气体的排气管道35; 以及在处理基板时设置在排气管道35的上表面下方的排气口5，用于将排气管道35排出的气体排出到处理室1外部，其中构成排气管道35的构件的至少一部分 被提供以被提升和降低。

公开(公告)号：US07579276B2

公开(公告)日：2009-08-25

申请号：US11663179

申请日：2005-10-14

申请人： Hideharu Itatani ,  Hidehiro Yanai ,  Sadayoshi Horii ,  Atsushi Sano

发明人： Hideharu Itatani ,  Hidehiro Yanai ,  Sadayoshi Horii ,  Atsushi Sano

IPC分类号： H01L21/44

CPC分类号： C23C16/4412

摘要： To prevent particles from generating by reducing a contact-gas area and improve a purge efficiency by reducing a flow passage capacity. There is provided a substrate processing apparatus, comprising a processing chamber 1 for processing a substrate 2; a substrate carrying port 10 provided on a sidewall of the processing chamber 1, for carrying-in/carrying-out the substrate 2 to/from the processing chamber 1; a holder provided so as to be lifted and lowered in the processing chamber 1, for holding the substrate 2; supply ports 3 and 4 provided above the holder, for supplying gas into the processing chamber 1; an exhaust duct 35 provided on the peripheral part of the holder, for exhausting the gas supplied into the processing chamber 1; and an exhaust port 5 provided below an upper surface of the exhaust duct 35 when the substrate is processed, for exhausting the gas discharged by the exhaust duct 35 outside the processing chamber 1, wherein at least a part of a member constituting the exhaust duct 35 is provided so as to be lifted and lowered.

摘要翻译： 为了防止通过减少接触气体区域而产生颗粒，并通过降低流通能力来提高吹扫效率。 提供了一种基板处理装置，包括：处理基板2的处理室1; 设置在处理室1的侧壁上的用于将基板2输入/移出处理室1的基板输送口10; 设置成在处理室1中升降的保持件，用于保持基板2; 供应口3和4设置在保持器上方，用于将气体供应到处理室1中; 设置在保持器的周边部分上的用于排出供给到处理室1中的气体的排气管道35; 以及在处理基板时设置在排气管道35的上表面下方的排气口5，用于将排气管道35排出的气体排出到处理室1外部，其中构成排气管道35的构件的至少一部分 被提供以被提升和降低。

公开(公告)号：US07648578B1

公开(公告)日：2010-01-19

申请号：US11547137

申请日：2005-06-15

申请人： Hideharu Itatani ,  Sadayoshi Horii ,  Hidehiro Yanai

发明人： Hideharu Itatani ,  Sadayoshi Horii ,  Hidehiro Yanai

IPC分类号： C23C16/455 ,  H01L21/31

CPC分类号： C23C16/45546 ,  C23C16/4412 ,  C23C16/4583 ,  H01L21/31691

摘要： A substrate is held by a susceptor (holding tool) in a processing chamber. A plate is provided on a periphery of the substrate. Gas supply ports are constructed to be provided on a side of the substrate and above the plate, and to supply gas to the substrate from a space above the plate. Outlets are provided at least on an upstream side and downstream side of the substrate on the plate, and are adapted to discharge the gas to a space below the plate. An exhaust port communicates with the outlets, and is provided on an opposite side to the gas supply ports with the substrate sandwiched there between and below the plate. The outlets are composed so that conductance of the upstream outlet in a gas flow between the outlets can be larger than conductance of the downstream outlet.

摘要翻译： 基板由处理室中的基座（保持工具）保持。 在基板的周边设置有板。 气体供给口被构造成设置在基板的一侧并且在板上方，并且从板上方的空间向基板供应气体。 至少在板上的基板的上游侧和下游侧设置出口，并且适于将气体排出到板下方的空间。 排气口与出口连通，并且设置在气体供给口的相对侧，衬底夹在板之间和下方。 出口构成为使得出口之间的气流中的上游出口的电导可以大于下游出口的电导。

公开(公告)号：US20140004710A1

公开(公告)日：2014-01-02

申请号：US13980144

申请日：2012-01-16

申请人： Masakazu Sakata ,  Hidehiro Yanai

发明人： Masakazu Sakata ,  Hidehiro Yanai

IPC分类号： H01L21/02

CPC分类号： H01L21/02104 ,  H01L21/6719 ,  H01L21/67781 ,  H01L21/68742 ,  H01L21/6875

摘要： A substrate processing apparatus of the present invention includes a substrate placement stage installed in the process chamber, and configured to place the substrate on a substrate placement surface, with a flange provided on its side face; a heating element arranged in the substrate placement stage and configured to heat the substrate; a plurality of struts configured to support the flange from below, and an exhaust unit configured to exhaust an atmosphere in the process chamber, wherein the supporting member is provided between the substrate placement stage and the plurality of struts.

摘要翻译： 本发明的基板处理装置包括：安装在处理室中的基板放置台，其构造为将基板设置在基板配置面上，在其侧面设置有凸缘; 加热元件，其布置在所述基板放置台中并且构造成加热所述基板; 多个支柱，其构造成从下方支撑凸缘;以及排气单元，其构造成排出处理室中的气氛，其中所述支撑构件设置在所述基板放置台和所述多个支柱之间。

公开(公告)号：US08444363B2

公开(公告)日：2013-05-21

申请号：US12619050

申请日：2009-11-16

申请人： Masakazu Sakata ,  Akira Takahashi ,  Hidehiro Yanai ,  Motonari Takebayashi ,  Shinya Tanaka

发明人： Masakazu Sakata ,  Akira Takahashi ,  Hidehiro Yanai ,  Motonari Takebayashi ,  Shinya Tanaka

IPC分类号： H01L21/677

CPC分类号： H01L21/67781 ,  H01L21/6719 ,  H01L21/67259 ,  H01L21/67745 ,  H01L21/67754 ,  H01L21/68707

摘要： Provided is a substrate processing apparatus configured to attain conflicting purposes of high throughput and footprint reduction. The substrate processing apparatus comprises a carrying chamber, and a loadlock chamber and at least two process chambers that are arranged around the carrying chamber. The carrying chamber comprises a substrate carrying unit configured to carry a substrate between the loadlock chamber and the process chambers. The substrate carrying unit comprises a first arm provided with a first finger and a second finger, and leading ends of the first and second fingers extend horizontally in the same direction. Each of the process chambers comprises a first process unit and a second process unit, and the second process unit is disposed at a side of the process chamber distant from the carrying chamber with the first process unit being disposed therebetween.

摘要翻译： 提供了一种被配置为实现高吞吐量和占地面积减小的冲突目的的基板处理装置。 基板处理装置包括承载室和负载锁定室以及布置在承载室周围的至少两个处理室。 承载室包括衬底承载单元，其构造成在负荷锁定室和处理室之间承载衬底。 基板承载单元包括设置有第一指状物和第二手指的第一臂，并且第一和第二指状物的前端沿相同方向水平延伸。 每个处理室包括第一处理单元和第二处理单元，并且第二处理单元设置在处理室远离输送室的一侧，其中第一处理单元设置在其间。

公开(公告)号：US20120132228A1

公开(公告)日：2012-05-31

申请号：US13306277

申请日：2011-11-29

申请人： Hidehiro Yanai ,  Shin Hiyama ,  Toru Kakuda ,  Toshiya Shimada ,  Tomihiro Amano

发明人： Hidehiro Yanai ,  Shin Hiyama ,  Toru Kakuda ,  Toshiya Shimada ,  Tomihiro Amano

IPC分类号： B08B6/00 ,  H01L21/3065

CPC分类号： H01J37/32458 ,  G03F7/427 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32633 ,  H01L21/31138

摘要： A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.

摘要翻译： 用于产生等离子体的常规基板处理装置不能产生高密度的等离子体，因此基板处理的生产量低。 为了解决这个问题，提供了一种基板处理装置，其包括具有管状形状的反应容器，并且设置有设置在其外周的线圈; 安装在反应容器的第一端的盖子; 安装在盖子上的气体导入口; 安装在气体引入口和线​​圈的上端之间的第一板; 安装在所述第一板和所述线圈的上端之间的第二板; 安装在反应容器的第二端的基板处理室; 以及连接到基板处理室的排气部。

公开(公告)号：US20100068895A1

公开(公告)日：2010-03-18

申请号：US12585342

申请日：2009-09-11

申请人： Hidehiro Yanai ,  Masakazu Sakata ,  Akira Takahashi

发明人： Hidehiro Yanai ,  Masakazu Sakata ,  Akira Takahashi

IPC分类号： H01L21/285 ,  B05C13/00

CPC分类号： H01L21/67748 ,  H01L21/6719

摘要： A substrate processing apparatus includes a processing chamber that processes a substrate, and a substrate placing base enclosed in the processing chamber, and a substrate transporting member that allows the substrate to wait temporarily on the substrate placing base, and exhaust holes provided so as to surround the substrate placing base, and a retracting space that allows the substrate transporting member to move in between lines each connecting the exhaust hole and an upper end of the substrate placing base and the substrate placing base.

摘要翻译： 基板处理装置包括处理基板的处理室和封装在处理室中的基板放置基板以及允许基板在基板放置基板上暂时等待的基板输送部件，以及围绕设置的排气孔 基板放置基座以及使基板搬运部件在连接排气孔和基板载置台以及基板载置台的上端的配线之间移动的回缩空间。

公开(公告)号：US20100068414A1

公开(公告)日：2010-03-18

申请号：US12585341

申请日：2009-09-11

申请人： Akira Takahashi ,  Hidehiro Yanai ,  Masakazu Sakata

发明人： Akira Takahashi ,  Hidehiro Yanai ,  Masakazu Sakata

IPC分类号： C23C16/513 ,  C23C16/00 ,  C23C16/46

CPC分类号： H01L21/6719 ,  H01L21/67703

摘要： A substrate processing apparatus includes a transport chamber and a processing chamber that processes substrates. The transport chamber has a first substrate transport member transporting the substrates from the transport chamber to the processing chamber. The processing chamber has a first processing unit which is adjacent to the transport chamber and has a first substrate placing base, a second processing unit which is adjacent to the other side of the transport chamber in the first processing unit and has a second substrate placing base, a second substrate transport member transporting the substrates between the first processing unit and the second processing unit, and a control unit controlling at least the second substrate transport member.

摘要翻译： 基板处理装置包括处理基板的输送室和处理室。 输送室具有将基板从输送室输送到处理室的第一基板输送部件。 处理室具有与传送室相邻的第一处理单元，具有第一基板放置基座，与第一处理单元中的输送室的另一侧相邻的第二处理单元，具有第二基板放置基座 在第一处理单元和第二处理单元之间传送基板的第二基板输送构件以及至少控制第二基板输送构件的控制单元。

公开(公告)号：US09911580B2

公开(公告)日：2018-03-06

申请号：US13306277

申请日：2011-11-29

申请人： Hidehiro Yanai ,  Shin Hiyama ,  Toru Kakuda ,  Toshiya Shimada ,  Tomihiro Amano

发明人： Hidehiro Yanai ,  Shin Hiyama ,  Toru Kakuda ,  Toshiya Shimada ,  Tomihiro Amano

IPC分类号： H01L21/3065 ,  B08B6/00 ,  H01J37/32 ,  G03F7/42 ,  H01L21/311

CPC分类号： H01J37/32458 ,  G03F7/427 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32633 ,  H01L21/31138

摘要： A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.

公开(公告)号：US09076644B2

公开(公告)日：2015-07-07

申请号：US13980144

申请日：2012-01-16

申请人： Masakazu Sakata ,  Hidehiro Yanai

发明人： Masakazu Sakata ,  Hidehiro Yanai

IPC分类号： C23C16/00 ,  H01L21/02 ,  H01L21/67 ,  H01L21/677 ,  H01L21/687

CPC分类号： H01L21/02104 ,  H01L21/6719 ,  H01L21/67781 ,  H01L21/68742 ,  H01L21/6875

摘要： A substrate processing apparatus of the present invention includes a substrate placement stage installed in the process chamber, and configured to place the substrate on a substrate placement surface, with a flange provided on its side face; a heating element arranged in the substrate placement stage and configured to heat the substrate; a plurality of struts configured to support the flange from below, and an exhaust unit configured to exhaust an atmosphere in the process chamber, wherein the supporting member is provided between the substrate placement stage and the plurality of struts.

摘要翻译： 本发明的基板处理装置包括：安装在处理室中的基板放置台，其构造为将基板设置在基板配置面上，在其侧面设置有凸缘; 加热元件，其布置在所述基板放置台中并且构造成加热所述基板; 多个支柱，其构造成从下方支撑凸缘;以及排气单元，其构造成排出处理室中的气氛，其中所述支撑构件设置在所述基板放置台和所述多个支柱之间。