公开(公告)号：US5728259A

公开(公告)日：1998-03-17

申请号：US545122

申请日：1995-10-19

申请人： Hideomi Suzawa ,  Shunpei Yamazaki ,  Toshiji Hamatani ,  Yasuhiko Takemura

发明人： Hideomi Suzawa ,  Shunpei Yamazaki ,  Toshiji Hamatani ,  Yasuhiko Takemura

IPC分类号： H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/336 ,  H01L29/786

CPC分类号： H01L21/02057 ,  H01L21/30608 ,  H01L21/3065 ,  Y10S438/978 ,  Y10S438/98

摘要： Disclosed herein is a process for fabricating a thin-film semiconductor device which includes (1) a step of etching a silicon film by wet etching or gas etching, the former employing a liquid containing hydrazine or ethylene diamine, the latter employing chlorine fluoride, thereby forming an island-like silicon semiconductor region having inclined edges, and (2) a step of forming thereon a gate insulating film by plasma-free process such as heated CVD. The process yields the island-like silicon region and gate insulating film completely free from plasma-induced damage. This reduces the leakage current between the source and drain (which is due to plasma-induced damage) and prevents the degradation of characteristic properties.

摘要翻译： 本文公开了一种制造薄膜半导体器件的方法，其包括（1）通过湿蚀刻或气蚀刻蚀硅膜的步骤，前者采用含有肼或乙二胺的液体，后者采用氯氟化物 形成具有倾斜边缘的岛状硅半导体区域，以及（2）通过无等离子体工艺（例如加热CVD）在其上形成栅极绝缘膜的步骤。 该工艺使岛状硅区和栅极绝缘膜完全没有等离子体引起的损伤。 这减少了源极和漏极之间的泄漏电流（这是由于等离子体引起的损坏），并且防止了特性的降低。

公开(公告)号：US06259117B1

公开(公告)日：2001-07-10

申请号：US09475245

申请日：1999-12-30

申请人： Yasuhiko Takemura ,  Toshiji Hamatani ,  Toshimitsu Konuma ,  Jun Koyama ,  Yuji Kawasaki ,  Hongyong Zhang ,  Shunpei Yamazaki

发明人： Yasuhiko Takemura ,  Toshiji Hamatani ,  Toshimitsu Konuma ,  Jun Koyama ,  Yuji Kawasaki ,  Hongyong Zhang ,  Shunpei Yamazaki

IPC分类号： H01L2904

CPC分类号： H01L27/12 ,  G02F1/13624 ,  G02F2001/13685 ,  G09G3/3648 ,  G09G2300/0809 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0852 ,  G09G2320/0214 ,  H01L27/124 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78696

摘要： A structure for reducing the OFF current of an active matrix display. In the active matrix display, plural TFTs are connected in series with each one pixel electrode. Of these TFTs connected in series, at least one TFT excluding the TFTs located at opposite ends is maintained in conduction. Alternatively, at least one capacitor is connected between the junction of the drain and source of each TFT connected in series and an AC grounded point. Thus, the amount of electric charge released from auxiliary capacitors during cutoff of the TFTs is reduced.

摘要翻译： 一种用于降低有源矩阵显示器的截止电流的结构。 在有源矩阵显示器中，多个TFT与每个像素电极串联连接。 在串联连接的这些TFT中，除了位于相对端的TFT之外的至少一个TFT保持导通。 或者，至少一个电容器连接在串联连接的每个TFT的漏极和源极的接点与AC接地点之间。 因此，在TFT的截止期间从辅助电容器释放的电荷量减少。

公开(公告)号：US06885027B2

公开(公告)日：2005-04-26

申请号：US10267647

申请日：2002-10-10

申请人： Yasuhiko Takemura ,  Toshiji Hamatani ,  Toshimitsu Konuma ,  Jun Koyama ,  Yuji Kawasaki ,  Shunpei Yamazaki

发明人： Yasuhiko Takemura ,  Toshiji Hamatani ,  Toshimitsu Konuma ,  Jun Koyama ,  Yuji Kawasaki ,  Shunpei Yamazaki

IPC分类号： G02F1/1362 ,  G09G3/36 ,  H01L29/786 ,  H01L29/04 ,  G02F1/133

CPC分类号： H01L27/12 ,  G02F1/13624 ,  G02F2001/13685 ,  G09G3/3648 ,  G09G2300/0809 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0852 ,  G09G2320/0214 ,  H01L27/124 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78696

摘要： A structure for reducing the OFF current of an active matrix display. In the active matrix display, plural TFTs are connected in series with each one pixel electrode. Of these TFTs connected in series, at least one TFT excluding the TFTs located at opposite ends is maintained in conduction. Alternatively, at least one capacitor is connected between the junction of the drain and source of each TFT connected in series and an AC grounded point. Thus, the amount of electric charge released from auxiliary capacitors during cutoff of the TFTs is reduced.

摘要翻译： 一种用于降低有源矩阵显示器的截止电流的结构。 在有源矩阵显示器中，多个TFT与每个像素电极串联连接。 在串联连接的这些TFT中，除了位于相对端的TFT之外的至少一个TFT保持导通。 或者，至少一个电容器连接在串联连接的每个TFT的漏极和源极的接点与AC接地点之间。 因此，在TFT的截止期间从辅助电容器释放的电荷量减少。

公开(公告)号：US5650636A

公开(公告)日：1997-07-22

申请号：US456404

申请日：1995-06-01

申请人： Yasuhiko Takemura ,  Toshiji Hamatani ,  Toshimitsu Konuma ,  Jun Koyama ,  Yuji Kawasaki ,  Hongyong Zhang ,  Shunpei Yamazaki

发明人： Yasuhiko Takemura ,  Toshiji Hamatani ,  Toshimitsu Konuma ,  Jun Koyama ,  Yuji Kawasaki ,  Hongyong Zhang ,  Shunpei Yamazaki

IPC分类号： G02F1/1362 ,  G09G3/36 ,  H01L29/786 ,  H01L29/04

CPC分类号： H01L27/12 ,  G02F1/13624 ,  G09G3/3648 ,  H01L29/78645 ,  H01L29/78696 ,  G02F2001/13685 ,  G09G2300/0809 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0852 ,  G09G2320/0214 ,  H01L27/124 ,  H01L29/78621

摘要： A structure for reducing the OFF current of an active matrix display. In the active matrix display, plural TFTs are connected in series with each one pixel electrode. Of these TFTs connected in series, at least one TFT excluding the TFTs located at opposite ends is maintained in conduction. Alternatively, at least one capacitor is connected between the junction of the drain and source of each TFT connected in series and an AC grounded point. Thus, the amount of electric charge released from auxiliary capacitors during cutoff of the TFTs is reduced.

摘要翻译： 一种用于降低有源矩阵显示器的截止电流的结构。 在有源矩阵显示器中，多个TFT与每个像素电极串联连接。 在串联连接的这些TFT中，除了位于相对端的TFT之外的至少一个TFT保持导通。 或者，至少一个电容器连接在串联连接的每个TFT的漏极和源极的接点与AC接地点之间。 因此，在TFT的截止期间从辅助电容器释放的电荷量减少。

公开(公告)号：US09048203B2

公开(公告)日：2015-06-02

申请号：US13177647

申请日：2011-07-07

申请人： Shunpei Yamazaki ,  Toshiji Hamatani ,  Toru Takayama

发明人： Shunpei Yamazaki ,  Toshiji Hamatani ,  Toru Takayama

IPC分类号： H01L33/00 ,  H01L27/32 ,  H01L21/67 ,  H01L51/50 ,  H01L51/56 ,  H01L51/52

CPC分类号： H01L27/3211 ,  H01L21/67207 ,  H01L27/3209 ,  H01L27/3218 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3281 ,  H01L51/5036 ,  H01L51/504 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/5284 ,  H01L51/56 ,  H01L2251/5315

摘要： A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color flat panel display using red, green, and blue color emission light by intentionally forming laminate portions, wherein portions of different organic compound layers of adjacent light emitting elements overlap with each other, without depending upon the method of forming the organic compound layers or the film formation precision.

公开(公告)号：US20120168763A1

公开(公告)日：2012-07-05

申请号：US13411842

申请日：2012-03-05

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Toru Takayama ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Toru Takayama ,  Toshiji Hamatani

IPC分类号： H01L33/08

CPC分类号： G02F1/13454 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L29/78684

摘要： The invention primarily provides gate electrodes and gate wirings permitting large-sized screens for active matrix-type display devices, wherein, in order to achieve this object, the construction of the invention is a semiconductor device having, on the same substrate, a pixel TFT provided in a display region and a driver circuit TFT provided around the display region, wherein the gate electrodes of the pixel TFT and the driver circuit TFT are formed from a first conductive layer, the gate electrodes are in electrical contact through connectors with gate wirings formed from a second conductive layer, and the connectors are provided outside the channel-forming regions of the pixel TFT and the driver circuit TFT.

摘要翻译： 本发明主要提供允许用于有源矩阵型显示装置的大尺寸屏幕的栅极电极和栅极布线，其中为了实现该目的，本发明的结构是在同一基板上具有像素TFT 设置在显示区域和设置在显示区域周围的驱动电路TFT，其中像素TFT和驱动电路TFT的栅电极由第一导电层形成，栅电极通过与形成的栅极布线的连接器电接触 并且连接器设置在像素TFT和驱动电路TFT的沟道形成区域的外侧。

公开(公告)号：US20110266548A1

公开(公告)日：2011-11-03

申请号：US13177647

申请日：2011-07-07

申请人： Shunpei Yamazaki ,  Toshiji Hamatani ,  Toru Takayama

发明人： Shunpei Yamazaki ,  Toshiji Hamatani ,  Toru Takayama

IPC分类号： H01L33/50

CPC分类号： H01L27/3211 ,  H01L21/67207 ,  H01L27/3209 ,  H01L27/3218 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3281 ,  H01L51/5036 ,  H01L51/504 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/5284 ,  H01L51/56 ,  H01L2251/5315

摘要： A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color flat panel display using red, green, and blue color emission light by intentionally forming laminate portions, wherein portions of different organic compound layers of adjacent light emitting elements overlap with each other, without depending upon the method of forming the organic compound layers or the film formation precision.

摘要翻译： 提供了具有高清晰度，高开口率和高可靠性的发光器件。 本发明通过有意形成层叠部分，利用红色，绿色和蓝色发光的全色平板显示器实现了高清晰度和高开口率，其中相邻发光元件的不同有机化合物层的部分彼此重叠 ，而不依赖于形成有机化合物层的方法或成膜精度。

公开(公告)号：US07864151B1

公开(公告)日：2011-01-04

申请号：US07825784

申请日：1992-01-21

申请人： Shunpei Yamazaki ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Toshiji Hamatani

IPC分类号： G09G3/36

CPC分类号： G09G3/3651 ,  G06F1/3203 ,  G09G3/3696 ,  G09G2330/021 ,  G09G2360/12 ,  Y10S345/901

摘要： A thin, readily portable book has a memory-type liquid crystal display in the display section of the thin portable book so as to obtain low power consumption along with compact size and reduced weight, a solar cell and a charging device in the energy section of the thin portable book, so that low power consumption is further promoted, a freely detachable cassette-type or card-type non-volatile semiconductor memory in the recording medium section of the thin portable book so as to provide further savings in power consumption.

摘要翻译： 薄型便携式书籍在薄型便携式书本的显示部分中具有记忆型液晶显示器，以便获得低功耗以及紧凑的尺寸和减轻的重量，太阳能电池和充电装置在能量部分 薄便携式书籍，从而进一步提高了低功耗，在薄型便携式书籍的记录介质部分中可自由拆卸的盒式或卡式非易失性半导体存储器，从而进一步节省功耗。

公开(公告)号：US07679087B2

公开(公告)日：2010-03-16

申请号：US10214691

申请日：2002-08-09

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

IPC分类号： H01L29/04 ,  H01L31/0392

CPC分类号： H01L21/02672 ,  H01L21/02686 ,  H01L21/2022 ,  H01L21/28158 ,  H01L21/3221 ,  H01L21/3226 ,  H01L27/1203 ,  H01L27/1229 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675

摘要： There is disclosed a method of fabricating a thin-film transistor having excellent characteristics. Nickel element is held in contact with selected regions of an amorphous silicon film. Then, thermal processing is performed to crystallize the amorphous film. Subsequently, thermal processing is carried out in an oxidizing ambient containing a halogen element to form a thermal oxide film. At this time, the crystallinity is improved. Also, gettering of the nickel element proceeds. This crystalline silicon film consists of crystals grown radially from a number of points. Consequently, the thin-film transistor having excellent characteristics can be obtained.

摘要翻译： 公开了一种制造具有优异特性的薄膜晶体管的方法。 镍元素与非晶硅膜的选定区域保持接触。 然后，进行热处理以使非晶膜结晶。 随后，在包含卤素元素的氧化环境中进行热处理以形成热氧化膜。 此时，结晶度提高。 此外，镍元素的吸收进行。 该晶体硅膜由从多个点径向生长的晶体组成。 因此，可以获得具有优异特性的薄膜晶体管。

公开(公告)号：US20090186469A1

公开(公告)日：2009-07-23

申请号：US12416185

申请日：2009-04-01

申请人： Shunpei Yamazaki ,  Toshiji Hamatani ,  Koichiro Tanaka

发明人： Shunpei Yamazaki ,  Toshiji Hamatani ,  Koichiro Tanaka

IPC分类号： H01L21/322 ,  H01L21/423

CPC分类号： H01J37/05 ,  H01J37/08 ,  H01J37/147 ,  H01J37/3171 ,  H01J37/32412 ,  H01J37/32752 ,  H01J2237/057 ,  H01J2237/0817 ,  H01J2237/304 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26586

摘要： There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current.

摘要翻译： 提出了一种用于通过产生等离子体（离子）来掺杂待掺杂的材料并通过高电压加速以形成离子电流的装置，其特别适用于处理具有大面积的衬底。 离子电流形成为具有线性截面形状，并且通过在基本上垂直于离子电流的截面的纵向方向的方向上移动待掺杂的材料来进行掺杂。