公开(公告)号：US07641382B2

公开(公告)日：2010-01-05

申请号：US11270563

申请日：2005-11-10

申请人： Hiroshi Izawa ,  Hiroshi Echizen ,  Hirokazu Ohtoshi ,  Masatoshi Tanaka

发明人： Hiroshi Izawa ,  Hiroshi Echizen ,  Hirokazu Ohtoshi ,  Masatoshi Tanaka

IPC分类号： G01N25/72 ,  G01K13/02 ,  G01K1/00 ,  G01M3/02

CPC分类号： H01J37/3244 ,  C23C16/4401 ,  G01M3/002

摘要： In a deposited-film formation apparatus or process having the means or steps of evacuating the inside of an inside-evacuatable chamber through an evacuation piping by an evacuation means, feeding a material gas into the chamber while evacuating the inside of the chamber, and applying a high-frequency power to form a deposited film on a substrate disposed inside the chamber, a leak is detected on the basis of a measured value of a temperature sensor which detects the heat of reaction that is generated when the material gas fed into the chamber reacts with oxygen contained in air having entered from the outside, so as to be able to stop the material gas feeding.In deposited-film formation apparatus or processes making use of spontaneously ignitable gases, the leak can quickly be detected when air enters the chamber because of any unexpected accident such as a break of piping.

摘要翻译： 在具有通过排气装置通过排气管道将内部可抽空室抽空的方法或步骤的沉积膜形成装置或方法中，在抽空室内时将原料气体进料到室中，并施加 在设置在室内的基板上形成沉积膜的高频电力，基于检测供给到室内的原料气体产生的反应热的温度传感器的测定值来检测泄漏 与从外部进入的空气中所含的氧气反应，以便能够停止原料气体供给。 在使用自发点燃气体的沉积膜形成装置或工艺中，当空气进入​​腔室时，由于任何意想不到的事故（例如管道断裂），可以快速检测泄漏。

公开(公告)号：US20060068081A1

公开(公告)日：2006-03-30

申请号：US11270563

申请日：2005-11-10

申请人： Hiroshi Izawa ,  Hiroshi Echizen ,  Hirokazu Ohtoshi ,  Masatoshi Tanaka

发明人： Hiroshi Izawa ,  Hiroshi Echizen ,  Hirokazu Ohtoshi ,  Masatoshi Tanaka

IPC分类号： C23C16/52 ,  C23C16/00

CPC分类号： H01J37/3244 ,  C23C16/4401 ,  G01M3/002

摘要： In a deposited-film formation apparatus or process having the means or steps of evacuating the inside of an inside-evacuatable chamber through an evacuation piping by an evacuation means, feeding a material gas into the chamber while evacuating the inside of the chamber, and applying a high-frequency power to form a deposited film on a substrate disposed inside the chamber, a leak is detected on the basis of a measured value of a temperature sensor which detects the heat of reaction that is generated when the material gas fed into the chamber reacts with oxygen contained in air having entered from the outside, so as to be able to stop the material gas feeding. In deposited-film formation apparatus or processes making use of spontaneously ignitable gases, the leak can quickly be detected when air enters the chamber because of any unexpected accident such as a break of piping.

摘要翻译： 在具有通过排气装置通过排气管道将内部可抽空室抽空的方法或步骤的沉积膜形成装置或方法中，在抽空室内时将原料气体进料到室中，并施加 在设置在室内的基板上形成沉积膜的高频电力，基于检测供给到室内的原料气体产生的反应热的温度传感器的测定值来检测泄漏 与从外部进入的空气中所含的氧气反应，以便能够停止原料气体供给。 在使用自发点燃气体的沉积膜形成装置或工艺中，当空气进入​​腔室时，由于任何意想不到的事故（例如管道断裂），可以快速检测泄漏。

公开(公告)号：US6113732A

公开(公告)日：2000-09-05

申请号：US814081

申请日：1997-03-10

申请人： Kohei Yoshida ,  Hiroshi Echizen ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Takehito Yoshino ,  Masatoshi Tanaka

发明人： Kohei Yoshida ,  Hiroshi Echizen ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Takehito Yoshino ,  Masatoshi Tanaka

IPC分类号： G03G5/08 ,  C23C16/44 ,  C23C16/48 ,  C23C16/50 ,  C23C16/511 ,  C23C16/54 ,  H01L21/00 ,  H01L21/205 ,  C23F1/02

CPC分类号： H01L21/67109 ,  C23C16/4412 ,  C23C16/481 ,  C23C16/545

摘要： A deposit film forming apparatus is characterized in that a temperature control member for controlling the temperature of a wall of deposition chamber is in contact with an outer wall of a deposition chamber through a heat conductivity adjusting plate, which can prevent overcooling while suppressing an increase in the temperature of the wall of deposition chamber during film formation and which can maintain the temperature of the wall of deposition chamber at a preferable temperature for deposition of film for a long time, thereby forming a deposit film. As a result, the apparatus can mass-produce deposit films of stable quality, especially, large-area and good-quality photovoltaic elements utilizing amorphous semiconductors, over a long period.

摘要翻译： 沉积膜形成装置的特征在于，用于控制沉积室壁的温度的温度控制构件通过导热性调节板与沉积室的外壁接触，其可以防止过度冷却，同时抑制 在成膜期间沉积室壁的温度，并且可以将沉积室的温度保持在用于长时间沉积膜的优选温度，从而形成沉积膜。 因此，该设备可以长时间大量生产质量稳定的沉积膜，特别是利用非晶半导体的大面积和优质光伏元件。

公开(公告)号：US06350489B1

公开(公告)日：2002-02-26

申请号：US08768609

申请日：1996-12-18

申请人： Koichiro Moriyama ,  Hiroshi Echizen ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Takehito Yoshino ,  Atsushi Yasuno ,  Kohei Yoshida ,  Yusuke Miyamoto

发明人： Koichiro Moriyama ,  Hiroshi Echizen ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Takehito Yoshino ,  Atsushi Yasuno ,  Kohei Yoshida ,  Yusuke Miyamoto

IPC分类号： C23C1654

CPC分类号： C23C16/545

摘要： To provide a deposited-film forming process and a deposited-film forming apparatus that may cause no scratches on the film forming surface to improve yield and enable stable discharge to thereby continuously form deposited films having uniform quality and uniform thickness, deposited films are formed by lengthwise continuously transporting a belt-like substrate so as to form a part of a discharge space, wherein the substrate is transported while bringing the transverse sectional shape of the substrate which forms a part of the discharge space into a curved shape by a roller.

摘要翻译： 为了提供沉积膜形成工艺和沉积膜形成装置，其可以在膜形成表面上不产生划痕以提高产量并且能够稳定地放电，从而连续地形成具有均匀质量和均匀厚度的沉积膜，沉积膜通过 纵向连续输送带状基板以形成放电空间的一部分，其中基板被输送，同时通过辊将构成放电空间的一部分的基板的横截面形状带入弯曲形状。

公开(公告)号：US06821317B2

公开(公告)日：2004-11-23

申请号：US10321482

申请日：2002-12-18

申请人： Hiroshi Echizen ,  Hiroshi Izawa

发明人： Hiroshi Echizen ,  Hiroshi Izawa

IPC分类号： B01D4706

CPC分类号： B01D53/1406 ,  B01D53/1412 ,  B01D53/1456

摘要： In a wet-process gas treatment method of treating an acid gas by using at least two treating columns connected in series, a ratio of the concentration of an acid gas at an outlet to a concentration of the acid gas at an inlet of a first treating column is set higher than a ratio of the concentration of the acid gas at an outlet to the concentration of acid gas at an inlet of at least one of the other treating columns, thereby preventing deposits from forming in the interior of connecting pipes between the columns and in the interiors of the treating columns, to prevent the connecting pipes from being blocked.

摘要翻译： 在通过使用串联连接的至少两个处理塔处理酸性气体的湿法气体处理方法中，出口处的酸性气体的浓度与第一处理的入口处的酸性气体的浓度的比例 柱设定为高于出口处的酸性气体的浓度与至少一个其它处理塔的入口处的酸性气体浓度的比例，从而防止在柱之间的连接管内部形成沉积物 并且在处理塔的内部，以防止连接管被堵塞。

公开(公告)号：US20050081720A1

公开(公告)日：2005-04-21

申请号：US10959966

申请日：2004-10-08

申请人： Hiroshi Echizen ,  Hiroshi Izawa

发明人： Hiroshi Echizen ,  Hiroshi Izawa

IPC分类号： B01D53/68 ,  B01D53/14 ,  B01D53/18 ,  B01D53/34 ,  B01D53/77 ,  B01D47/00

CPC分类号： B01D53/1406 ,  B01D53/1412 ,  B01D53/1456

摘要： In a wet-process gas treatment method of treating an acid gas by using at least two treating columns connected in series, a ratio of the concentration of an acid gas at an outlet to a concentration of the acid gas at an inlet of a first treating column is set higher than a ratio of the concentration of the acid gas at an outlet to the concentration of acid gas at an inlet of at least one of the other treating columns, thereby preventing deposits from forming in the interior of connecting pipes between the columns and in the interiors of the treating columns, to prevent the connecting pipes from being blocked.

摘要翻译： 在通过使用串联连接的至少两个处理塔处理酸性气体的湿法气体处理方法中，出口处的酸性气体的浓度与第一处理的入口处的酸性气体的浓度的比例 柱设定为高于出口处的酸性气体的浓度与至少一个其它处理塔的入口处的酸性气体浓度的比例，从而防止在柱之间的连接管内部形成沉积物 并且在处理塔的内部，以防止连接管被堵塞。

公开(公告)号：US07288140B2

公开(公告)日：2007-10-30

申请号：US10959966

申请日：2004-10-08

申请人： Hiroshi Echizen ,  Hiroshi Izawa

发明人： Hiroshi Echizen ,  Hiroshi Izawa

IPC分类号： B01D47/06 ,  B01D53/14

CPC分类号： B01D53/1406 ,  B01D53/1412 ,  B01D53/1456

摘要： In a wet-process gas treatment method of treating an acid gas by using at least two treating columns connected in series, a ratio of the concentration of an acid gas at an outlet to a concentration of the acid gas at an inlet of a first treating column is set higher than a ratio of the concentration of the acid gas at an outlet to the concentration of acid gas at an inlet of at least one of the other treating columns, thereby preventing deposits from forming in the interior of connecting pipes between the columns and in the interiors of the treating columns, to prevent the connecting pipes from being blocked.

摘要翻译： 在通过使用串联连接的至少两个处理塔处理酸性气体的湿法气体处理方法中，出口处的酸性气体的浓度与第一处理的入口处的酸性气体的浓度的比例 柱设定为高于出口处的酸性气体的浓度与至少一个其它处理塔的入口处的酸性气体浓度的比例，从而防止在柱之间的连接管内部形成沉积物 并且在处理塔的内部，以防止连接管被堵塞。

公开(公告)号：US06273955B1

公开(公告)日：2001-08-14

申请号：US08704138

申请日：1996-08-28

申请人： Takehito Yoshino ,  Hiroshi Echizen ,  Masahiro Kanai ,  Hirokazu Otoshi ,  Atsushi Yasuno ,  Kohei Yoshida ,  Koichiro Moriyama ,  Masatoshi Tanaka

发明人： Takehito Yoshino ,  Hiroshi Echizen ,  Masahiro Kanai ,  Hirokazu Otoshi ,  Atsushi Yasuno ,  Kohei Yoshida ,  Koichiro Moriyama ,  Masatoshi Tanaka

IPC分类号： C23C1600

CPC分类号： C23C16/545 ,  C23C16/24 ,  C23C16/4401 ,  C23C16/511 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： A film forming apparatus for forming a plurality of films on a substrate through a continuous process, comprising a plurality of vacuum chambers in communication to each other via connection, at least vacuum chamber having internally a treatment detachable from the vacuum chamber for fulfilling a predetermined treatment on the substrate.

摘要翻译： 一种用于通过连续工艺在基板上形成多个膜的成膜装置，包括通过连接彼此连通的多个真空室，至少具有可从真空室中分离的处理的真空室，用于实现预定处理 在基板上。

公开(公告)号：US06338872B1

公开(公告)日：2002-01-15

申请号：US09337557

申请日：1999-06-22

申请人： Takehito Yoshino ,  Hiroshi Echizen ,  Masahiro Kanai ,  Hirokazu Otoshi ,  Atsushi Yasuno ,  Kohei Yoshida ,  Koichiro Moriyama ,  Masatoshi Tanaka

发明人： Takehito Yoshino ,  Hiroshi Echizen ,  Masahiro Kanai ,  Hirokazu Otoshi ,  Atsushi Yasuno ,  Kohei Yoshida ,  Koichiro Moriyama ,  Masatoshi Tanaka

IPC分类号： C23C1600

CPC分类号： C23C16/545 ,  C23C16/24 ,  C23C16/4401 ,  C23C16/511 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： A film forming method is described using an apparatus with a plurality of vacuum chambers which communicate with each other via a connection, where the apparatus has one or more detachable treatment rooms and where the method includes continuously forming a plurality of films on a band-shaped substrate within the treatment rooms, while continuously moving the substrate through the treatment rooms. The treatment rooms within said desired vacuum chambers are replaced after forming the film for a predetermined period as a part of the film forming method.

摘要翻译： 使用具有多个真空室的设备来描述成膜方法，所述多个真空室经由连接彼此连通，其中所述设备具有一个或多个可拆卸的处理室，并且其中所述方法包括在带状上连续形成多个膜 处理室内的基材，同时将基材连续移动通过治疗室。 作为成膜方法的一部分，在形成膜预定时间之后，在所述真空室内的处理室被更换。

公开(公告)号：US06740210B2

公开(公告)日：2004-05-25

申请号：US09973713

申请日：2001-10-11

申请人： Hiroshi Echizen ,  Toshihiro Yamashita

发明人： Hiroshi Echizen ,  Toshihiro Yamashita

IPC分类号： C23C1434

CPC分类号： C23C14/086 ,  C23C14/0036 ,  C23C14/541 ,  C23C14/562

摘要： Since the transfer speed of a substrate is controlled to compensate for a film-forming rate, and an electric power applied to heating means for heating the substrate is controlled so that thermal equilibrium of the substrate is maintained, a film having a uniform thickness and quality can be stably formed even when sputtering is performed for a long time.

摘要翻译： 由于控制基板的转印速度以补偿成膜速度，并且控制施加到用于加热基板的加热装置的电力，使得保持基板的热平衡，具有均匀厚度和质量的膜 即使长时间进行溅射也能够稳定地形成。