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    GaN based semiconductor element
    5.
    发明申请
    GaN based semiconductor element 有权
    GaN基半导体元件

    公开(公告)号：US20090278172A1

    公开(公告)日：2009-11-12

    申请号：US12382010

    申请日：2009-03-05

    申请人： Shusuke Kaya ,  Seikoh Yoshida ,  Sadahiro Kato ,  Takehiko Nomura ,  Nariaki Ikeda ,  Masayuki Iwami ,  Yoshihiro Sato ,  Hiroshi Kambayashi ,  Yuki Niiyama ,  Masatoshi Ikeda

    发明人： Shusuke Kaya ,  Seikoh Yoshida ,  Sadahiro Kato ,  Takehiko Nomura ,  Nariaki Ikeda ,  Masayuki Iwami ,  Yoshihiro Sato ,  Hiroshi Kambayashi ,  Yuki Niiyama ,  Masatoshi Ikeda

    IPC分类号： H01L29/205

    CPC分类号： H01L29/0847 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66462 ,  H01L29/7787

    摘要： The field effect transistor includes a laminated structure in which a buffer layer, and an electron transporting layer (undoped GaN layer), and an electron supplying layer (undoped AlGaN layer) are laminated in sequence on a sapphire substrate. An npn laminated structure is formed on a source region of the electron supplying layer, and a source electrode is formed on the npn laminated structure. A drain electrode is formed in a drain region of the electron supplying layer, and an insulating film is formed in an opening region formed in the gate region. When a forward voltage greater than a threshold is applied to the gate electrode, an inversion layer is formed and the drain current flows. By changing a thickness and an impurity concentration of the p-type GaN layer, the threshold voltage can be controlled. The electrical field concentration between the gate electrode and the drain electrode is relaxed due to the drift layer, and voltage resistance improves.

    摘要翻译： 场效应晶体管包括其中缓冲层和电子传输层（未掺杂的GaN层）和电子供应层（未掺杂的AlGaN层）依次叠置在蓝宝石衬底上的叠层结构。 在电子供给层的源极区域上形成npn层叠结构，在npn层叠结构上形成源电极。 在电子供给层的漏极区域中形成漏电极，并且在形成在栅极区域的开口区域中形成绝缘膜。 当向栅电极施加大于阈值的正向电压时，形成反型层，漏极电流流动。 通过改变p型GaN层的厚度和杂质浓度，可以控制阈值电压。 由于漂移层，栅极电极和漏电极之间的电场浓度被松弛，并且耐电压提高。

    GaN-BASED SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURING THE SAME
    8.
    发明申请
    GaN-BASED SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURING THE SAME 审中-公开
    基于GaN的半导体元件及其制造方法

    公开(公告)号：US20110049529A1

    公开(公告)日：2011-03-03

    申请号：US12943448

    申请日：2010-11-10

    申请人： Yoshihiro Sato ,  Takehiko Nomura ,  Hiroshi Kambayashi ,  Shinji Nagata

    发明人： Yoshihiro Sato ,  Takehiko Nomura ,  Hiroshi Kambayashi ,  Shinji Nagata

    IPC分类号： H01L29/20 ,  H01L21/28

    CPC分类号： H01L29/2003 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/28264 ,  H01L21/31608 ,  H01L29/1083 ,  H01L29/4236 ,  H01L29/51 ,  H01L29/66462 ,  H01L29/7787

    摘要： Provided is a GaN series semiconductor element, which is capable of obtaining an adequate normally-off characteristic, and a manufacturing method thereof.In a GaN series semiconductor element that comprises an operating layer comprising a GaN series compound semiconductor, a gate insulating film that is formed on the operating layer, and a gate electrode that is formed on the gate insulating film, the gate insulating is a SiO2 film of which an infrared absorption peak that corresponds to the vibration energy of a Si—H bond does not appear in the absorption spectrum of transmitted light that is obtained by the Fourier transform infrared spectroscopy method. This kind of SiO2 film is a high-quality SiO2 film in which the occurrence of Si—H bonds and dangling bonds is suppressed. With this kind of construction, adverse effects on the control of the threshold value of the GaN series semiconductor element are also suppressed, so an adequate normally-off characteristic is obtained.

    摘要翻译： 提供能够获得足够的常关特性的GaN系半导体元件及其制造方法。 在包括GaN系化合物半导体的工作层的GaN系半导体元件，形成在工作层上的栅极绝缘膜和形成在栅极绝缘膜上的栅极电极之间，栅绝缘体是SiO 2膜 其中通过傅立叶变换红外光谱法获得的透射光的吸收光谱中不出现与Si-H键的振动能相对应的红外吸收峰。 这种SiO 2膜是抑制Si-H键和悬挂键发生的高质量SiO 2膜。 通过这种构造，也可以抑制对GaN系半导体元件的阈值的控制的不利影响，从而获得充分的常关特性。

    GaN based semiconductor element
    9.
    发明授权
    GaN based semiconductor element 有权
    GaN基半导体元件

    公开(公告)号：US07812371B2

    公开(公告)日：2010-10-12

    申请号：US12382010

    申请日：2009-03-05

    申请人： Shusuke Kaya ,  Seikoh Yoshida ,  Masatoshi Ikeda, legal representative ,  Sadahiro Kato ,  Takehiko Nomura ,  Nariaki Ikeda ,  Masayuki Iwami ,  Yoshihiro Sato ,  Hiroshi Kambayashi ,  Yuki Niiyama

    发明人： Shusuke Kaya ,  Seikoh Yoshida ,  Sadahiro Kato ,  Takehiko Nomura ,  Nariaki Ikeda ,  Masayuki Iwami ,  Yoshihiro Sato ,  Hiroshi Kambayashi ,  Yuki Niiyama

    IPC分类号： H01L31/072

    CPC分类号： H01L29/0847 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66462 ,  H01L29/7787

    摘要： The field effect transistor includes a laminated structure in which a buffer layer, and an electron transporting layer (undoped GaN layer), and an electron supplying layer (undoped AlGaN layer) are laminated in sequence on a sapphire substrate. An npn laminated structure is formed on a source region of the electron supplying layer, and a source electrode is formed on the npn laminated structure. A drain electrode is formed in a drain region of the electron supplying layer, and an insulating film is formed in an opening region formed in the gate region. When a forward voltage greater than a threshold is applied to the gate electrode, an inversion layer is formed and the drain current flows. By changing a thickness and an impurity concentration of the p-type GaN layer, the threshold voltage can be controlled. The electrical field concentration between the gate electrode and the drain electrode is relaxed due to the drift layer, and voltage resistance improves.

    摘要翻译： 场效应晶体管包括其中缓冲层和电子传输层（未掺杂的GaN层）和电子供体层（未掺杂的AlGaN层）依次层叠在蓝宝石衬底上的叠层结构。 在电子供给层的源极区域上形成npn层叠结构，在npn层叠结构上形成源电极。 在电子供给层的漏极区域中形成漏电极，并且在形成在栅极区域的开口区域中形成绝缘膜。 当向栅电极施加大于阈值的正向电压时，形成反型层，漏极电流流动。 通过改变p型GaN层的厚度和杂质浓度，可以控制阈值电压。 由于漂移层，栅极电极和漏电极之间的电场浓度被松弛，并且耐电压提高。

    III-NITRIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR
    10.
    发明申请
    III-NITRIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR 审中-公开
    III-NITRIDE半导体场效应晶体管

    公开(公告)号：US20100219455A1

    公开(公告)日：2010-09-02

    申请号：US12699957

    申请日：2010-02-04

    申请人： Yuki Niiyama ,  Seikoh Yoshida ,  Takehiko Nomura ,  Hiroshi Kambayashi

    发明人： Yuki Niiyama ,  Seikoh Yoshida ,  Takehiko Nomura ,  Hiroshi Kambayashi

    IPC分类号： H01L29/20 ,  H01L29/78

    CPC分类号： H01L29/0847 ,  H01L29/2003 ,  H01L29/66659 ,  H01L29/7835

    摘要： An active layer of a first conductive-type includes a channel area. A first contact area and a second contact area of a second conductive-type are formed at positions across the channel area. A source electrode is formed on the first contact area. A drain electrode is formed on the second contact area. A gate electrode is formed above the channel area via a gate insulating layer. A reduced surface field zone of the second conductive-type is formed in the channel area at a position close to the second contact area. Thickness of the reduced surface field zone is 30 nanometers to 100 nanometers.

    摘要翻译： 第一导电类型的有源层包括沟道区域。 第二导电类型的第一接触区域和第二接触区域形成在穿过沟道区域的位置处。 源电极形成在第一接触区域上。 漏电极形成在第二接触区域上。 栅极通过栅极绝缘层形成在沟道区的上方。 第二导电类型的减小的表面场区形成在靠近第二接触区域的位置处的通道区域中。 还原表面场区的厚度为30纳米至100纳米。