公开(公告)号：US20110049529A1

公开(公告)日：2011-03-03

申请号：US12943448

申请日：2010-11-10

申请人： Yoshihiro Sato ,  Takehiko Nomura ,  Hiroshi Kambayashi ,  Shinji Nagata

发明人： Yoshihiro Sato ,  Takehiko Nomura ,  Hiroshi Kambayashi ,  Shinji Nagata

IPC分类号： H01L29/20 ,  H01L21/28

CPC分类号： H01L29/2003 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/28264 ,  H01L21/31608 ,  H01L29/1083 ,  H01L29/4236 ,  H01L29/51 ,  H01L29/66462 ,  H01L29/7787

摘要： Provided is a GaN series semiconductor element, which is capable of obtaining an adequate normally-off characteristic, and a manufacturing method thereof.In a GaN series semiconductor element that comprises an operating layer comprising a GaN series compound semiconductor, a gate insulating film that is formed on the operating layer, and a gate electrode that is formed on the gate insulating film, the gate insulating is a SiO2 film of which an infrared absorption peak that corresponds to the vibration energy of a Si—H bond does not appear in the absorption spectrum of transmitted light that is obtained by the Fourier transform infrared spectroscopy method. This kind of SiO2 film is a high-quality SiO2 film in which the occurrence of Si—H bonds and dangling bonds is suppressed. With this kind of construction, adverse effects on the control of the threshold value of the GaN series semiconductor element are also suppressed, so an adequate normally-off characteristic is obtained.

摘要翻译： 提供能够获得足够的常关特性的GaN系半导体元件及其制造方法。 在包括GaN系化合物半导体的工作层的GaN系半导体元件，形成在工作层上的栅极绝缘膜和形成在栅极绝缘膜上的栅极电极之间，栅绝缘体是SiO 2膜 其中通过傅立叶变换红外光谱法获得的透射光的吸收光谱中不出现与Si-H键的振动能相对应的红外吸收峰。 这种SiO 2膜是抑制Si-H键和悬挂键发生的高质量SiO 2膜。 通过这种构造，也可以抑制对GaN系半导体元件的阈值的控制的不利影响，从而获得充分的常关特性。

公开(公告)号：US20130032819A1

公开(公告)日：2013-02-07

申请号：US13582229

申请日：2011-03-02

申请人： Hiroshi Kambayashi ,  Katsunori Ueno ,  Takehiko Nomura ,  Yoshihiro Sato ,  Akinobu Teramoto ,  Tadahiro Ohmi

发明人： Hiroshi Kambayashi ,  Katsunori Ueno ,  Takehiko Nomura ,  Yoshihiro Sato ,  Akinobu Teramoto ,  Tadahiro Ohmi

IPC分类号： H01L29/51

CPC分类号： H01L21/28264 ,  C23C16/403 ,  C23C16/4488 ,  H01L21/02178 ,  H01L21/02277 ,  H01L29/2003 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78

摘要： The semiconductor transistor according the present invention includes an active layer composed of a GaN-based semiconductor and a gate insulating film formed on the active layer. The gate insulating film has a first insulating film including one or more compounds selected from the group consisting of Al2O3, HfO2, ZrO2, La2O3, and Y2O3 formed on the active layer, and a second insulating film composed of SiO2 formed on the first insulating film.

摘要翻译： 根据本发明的半导体晶体管包括由有源层形成的GaN基半导体和栅极绝缘膜构成的有源层。 栅极绝缘膜具有包含一种或多种选自Al 2 O 3，HfO 2，ZrO 2，La 2 O 3和Y 2 O 3的化合物的第一绝缘膜和形成在第一绝缘膜上的由SiO 2构成的第二绝缘膜 。

公开(公告)号：US20090194790A1

公开(公告)日：2009-08-06

申请号：US12318779

申请日：2009-01-08

申请人： Yoshihiro Sato ,  Hiroshi Kambayashi ,  Yuki Niiyama ,  Takehiko Nomura ,  Seikoh Yoshida ,  Masayuki Iwami ,  Jiang Li

发明人： Yoshihiro Sato ,  Hiroshi Kambayashi ,  Yuki Niiyama ,  Takehiko Nomura ,  Seikoh Yoshida ,  Masayuki Iwami ,  Jiang Li

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/0843 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/267 ,  H01L29/4232 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/778 ,  H01L29/7783 ,  H01L29/7789

摘要： A field effect transistor has an MOS structure and is formed of a nitride based compound semiconductor. The field effect transistor includes a substrate; a semiconductor operating layer having a recess part and formed on the substrate; an insulating layer formed on the semiconductor operating layer including the recess part; a gate electrode formed on the insulating layer at the recess part; and a source electrode and a drain electrode formed on the semiconductor operating layer with the recess part in between and electrically connected to the semiconductor operating layer. The recess part includes a side wall protruding and inclined relative to the semiconductor operating layer.

摘要翻译： 场效应晶体管具有MOS结构并且由氮化物基化合物半导体形成。 场效应晶体管包括衬底; 半导体工作层，具有凹部并形成在所述基板上; 形成在包括凹部的半导体操作层上的绝缘层; 形成在所述凹部的所述绝缘层上的栅电极; 以及形成在半导体操作层上的源电极和漏电极，其中凹部位于半导体操作层之间并与半导体操作层电连接。 凹部包括相对于半导体操作层突出并倾斜的侧壁。

公开(公告)号：US09048302B2

公开(公告)日：2015-06-02

申请号：US12318779

申请日：2009-01-08

申请人： Yoshihiro Sato ,  Hiroshi Kambayashi ,  Yuki Niiyama ,  Takehiko Nomura ,  Seikoh Yoshida ,  Masayuki Iwami ,  Jiang Li

发明人： Yoshihiro Sato ,  Hiroshi Kambayashi ,  Yuki Niiyama ,  Takehiko Nomura ,  Seikoh Yoshida ,  Masayuki Iwami ,  Jiang Li

IPC分类号： H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L29/778 ,  H01L29/66 ,  H01L29/423 ,  H01L29/78 ,  H01L21/02 ,  H01L29/20 ,  H01L29/205 ,  H01L29/267

CPC分类号： H01L29/7813 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/0843 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/267 ,  H01L29/4232 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/778 ,  H01L29/7783 ,  H01L29/7789

摘要： A field effect transistor has an MOS structure and is formed of a nitride based compound semiconductor. The field effect transistor includes a substrate; a semiconductor operating layer having a recess and formed on the substrate; an insulating layer formed on the semiconductor operating layer including the recess; a gate electrode formed on the insulating layer at the recess; and a source electrode and a drain electrode formed on the semiconductor operating layer with the recess in between and electrically connected to the semiconductor operating layer. The recess includes a side wall inclined relative to the semiconductor operating layer.

摘要翻译： 场效应晶体管具有MOS结构并且由氮化物基化合物半导体形成。 场效应晶体管包括衬底; 具有凹部并形成在所述基板上的半导体操作层; 形成在包括所述凹部的所述半导体操作层上的绝缘层; 在所述凹部处形成在所述绝缘层上的栅电极; 以及形成在半导体操作层上的源电极和漏电极，其中凹部位于半导体操作层之间并与半导体操作层电连接。 凹部包括相对于半导体操作层倾斜的侧壁。

公开(公告)号：US20090278172A1

公开(公告)日：2009-11-12

申请号：US12382010

申请日：2009-03-05

申请人： Shusuke Kaya ,  Seikoh Yoshida ,  Sadahiro Kato ,  Takehiko Nomura ,  Nariaki Ikeda ,  Masayuki Iwami ,  Yoshihiro Sato ,  Hiroshi Kambayashi ,  Yuki Niiyama ,  Masatoshi Ikeda

发明人： Shusuke Kaya ,  Seikoh Yoshida ,  Sadahiro Kato ,  Takehiko Nomura ,  Nariaki Ikeda ,  Masayuki Iwami ,  Yoshihiro Sato ,  Hiroshi Kambayashi ,  Yuki Niiyama ,  Masatoshi Ikeda

IPC分类号： H01L29/205

CPC分类号： H01L29/0847 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66462 ,  H01L29/7787

摘要： The field effect transistor includes a laminated structure in which a buffer layer, and an electron transporting layer (undoped GaN layer), and an electron supplying layer (undoped AlGaN layer) are laminated in sequence on a sapphire substrate. An npn laminated structure is formed on a source region of the electron supplying layer, and a source electrode is formed on the npn laminated structure. A drain electrode is formed in a drain region of the electron supplying layer, and an insulating film is formed in an opening region formed in the gate region. When a forward voltage greater than a threshold is applied to the gate electrode, an inversion layer is formed and the drain current flows. By changing a thickness and an impurity concentration of the p-type GaN layer, the threshold voltage can be controlled. The electrical field concentration between the gate electrode and the drain electrode is relaxed due to the drift layer, and voltage resistance improves.

摘要翻译： 场效应晶体管包括其中缓冲层和电子传输层（未掺杂的GaN层）和电子供应层（未掺杂的AlGaN层）依次叠置在蓝宝石衬底上的叠层结构。 在电子供给层的源极区域上形成npn层叠结构，在npn层叠结构上形成源电极。 在电子供给层的漏极区域中形成漏电极，并且在形成在栅极区域的开口区域中形成绝缘膜。 当向栅电极施加大于阈值的正向电压时，形成反型层，漏极电流流动。 通过改变p型GaN层的厚度和杂质浓度，可以控制阈值电压。 由于漂移层，栅极电极和漏电极之间的电场浓度被松弛，并且耐电压提高。

公开(公告)号：US20090140295A1

公开(公告)日：2009-06-04

申请号：US12292164

申请日：2008-11-13

申请人： Shusuke Kaya ,  Seikoh Yoshida ,  Sadahiro Kato ,  Takehiko Nomura ,  Nariaki Ikeda ,  Masayuki Iwami ,  Yoshihiro Sato ,  Hiroshi Kambayashi ,  Koh Li

发明人： Shusuke Kaya ,  Seikoh Yoshida ,  Sadahiro Kato ,  Takehiko Nomura ,  Nariaki Ikeda ,  Masayuki Iwami ,  Yoshihiro Sato ,  Hiroshi Kambayashi ,  Koh Li

IPC分类号： H01L29/737 ,  H01L21/28 ,  H01L21/265

CPC分类号： H01L29/7787 ,  H01L29/0611 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/66462

摘要： A GaN-based semiconductor device includes a silicon substrate; an active layer of a GaN-based semiconductor formed on the silicon substrate; a trench formed in the active layer and extending from a top surface of the active layer to the silicon substrate; a first electrode formed on an internal wall surface of the trench so that the first electrode extends from the top surface of the active layer to the silicon substrate; a second electrode formed on the active layer so that a current flows between the first electrode and the second electrode via the active layer; and a bottom electrode formed on a bottom surface of the silicon substrate. The first electrode is formed of a metal capable of being in ohmic contact with the silicon substrate and the active layer.

摘要翻译： GaN基半导体器件包括硅衬底; 形成在硅衬底上的GaN基半导体的有源层; 形成在有源层中并从有源层的顶表面延伸到硅衬底的沟槽; 形成在所述沟槽的内壁表面上的第一电极，使得所述第一电极从所述有源层的顶表面延伸到所述硅衬底; 形成在有源层上的第二电极，使得电流经由有源层在第一电极和第二电极之间流动; 以及形成在硅衬底的底表面上的底部电极。 第一电极由能够与硅衬底和有源层欧姆接触的金属形成。

公开(公告)号：US09875899B2

公开(公告)日：2018-01-23

申请号：US13582229

申请日：2011-03-02

申请人： Hiroshi Kambayashi ,  Katsunori Ueno ,  Takehiko Nomura ,  Yoshihiro Sato ,  Akinobu Teramoto ,  Tadahiro Ohmi

发明人： Hiroshi Kambayashi ,  Katsunori Ueno ,  Takehiko Nomura ,  Yoshihiro Sato ,  Akinobu Teramoto ,  Tadahiro Ohmi

IPC分类号： H01L21/28 ,  H01L29/51 ,  H01L29/78 ,  H01L21/02 ,  C23C16/40 ,  C23C16/448 ,  H01L29/20

CPC分类号： H01L21/28264 ,  C23C16/403 ,  C23C16/4488 ,  H01L21/02178 ,  H01L21/02277 ,  H01L29/2003 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78

摘要： The semiconductor transistor according the present invention includes an active layer composed of a GaN-based semiconductor and a gate insulating film formed on the active layer. The gate insulating film has a first insulating film including one or more compounds selected from the group consisting of Al2O3, HfO2, ZrO2, La2O3, and Y2O3 formed on the active layer, and a second insulating film composed of SiO2 formed on the first insulating film.

公开(公告)号：US08304809B2

公开(公告)日：2012-11-06

申请号：US12292164

申请日：2008-11-13

申请人： Shusuke Kaya ,  Seikoh Yoshida ,  Masatoshi Ikeda, legal representative ,  Sadahiro Kato ,  Takehiko Nomura ,  Nariaki Ikeda ,  Masayuki Iwami ,  Yoshihiro Sato ,  Hiroshi Kambayashi ,  Koh Li

发明人： Shusuke Kaya ,  Seikoh Yoshida ,  Sadahiro Kato ,  Takehiko Nomura ,  Nariaki Ikeda ,  Masayuki Iwami ,  Yoshihiro Sato ,  Hiroshi Kambayashi ,  Koh Li

IPC分类号： H01L29/737 ,  H01L21/28 ,  H01L21/265

CPC分类号： H01L29/7787 ,  H01L29/0611 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/66462

摘要： In a GaN-based semiconductor device, an active layer of a GaN-based semiconductor is formed on a silicon substrate. A trench is formed in the active layer and extends from a top surface of the active layer to a depth reaching the silicon substrate. A first electrode is formed on an internal wall surface of the trench and extends from the top surface of the active layer to the silicon substrate. A second electrode is formed on the active layer to define a current path between the first electrode and the second electrode via the active layer in an on-state of the device. A bottom electrode is formed on a bottom surface of the silicon substrate and defines a bonding pad for the first electrode. The first electrode is formed of metal in direct ohmic contact with both the silicon substrate and the active layer.

摘要翻译： 在GaN基半导体器件中，在硅衬底上形成GaN基半导体的有源层。 在有源层中形成沟槽并从有源层的顶表面延伸到达到硅衬底的深度。 第一电极形成在沟槽的内壁表面上并从有源层的顶表面延伸到硅衬底。 第二电极形成在有源层上，以在器件的导通状态中经由有源层在第一电极和第二电极之间限定电流路径。 底部电极形成在硅衬底的底表面上，并且限定了用于第一电极的焊盘。 第一电极由与硅衬底和有源层直接欧姆接触的金属形成。

公开(公告)号：US07812371B2

公开(公告)日：2010-10-12

申请号：US12382010

申请日：2009-03-05

申请人： Shusuke Kaya ,  Seikoh Yoshida ,  Masatoshi Ikeda, legal representative ,  Sadahiro Kato ,  Takehiko Nomura ,  Nariaki Ikeda ,  Masayuki Iwami ,  Yoshihiro Sato ,  Hiroshi Kambayashi ,  Yuki Niiyama

发明人： Shusuke Kaya ,  Seikoh Yoshida ,  Sadahiro Kato ,  Takehiko Nomura ,  Nariaki Ikeda ,  Masayuki Iwami ,  Yoshihiro Sato ,  Hiroshi Kambayashi ,  Yuki Niiyama

IPC分类号： H01L31/072

CPC分类号： H01L29/0847 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66462 ,  H01L29/7787

摘要： The field effect transistor includes a laminated structure in which a buffer layer, and an electron transporting layer (undoped GaN layer), and an electron supplying layer (undoped AlGaN layer) are laminated in sequence on a sapphire substrate. An npn laminated structure is formed on a source region of the electron supplying layer, and a source electrode is formed on the npn laminated structure. A drain electrode is formed in a drain region of the electron supplying layer, and an insulating film is formed in an opening region formed in the gate region. When a forward voltage greater than a threshold is applied to the gate electrode, an inversion layer is formed and the drain current flows. By changing a thickness and an impurity concentration of the p-type GaN layer, the threshold voltage can be controlled. The electrical field concentration between the gate electrode and the drain electrode is relaxed due to the drift layer, and voltage resistance improves.

摘要翻译： 场效应晶体管包括其中缓冲层和电子传输层（未掺杂的GaN层）和电子供体层（未掺杂的AlGaN层）依次层叠在蓝宝石衬底上的叠层结构。 在电子供给层的源极区域上形成npn层叠结构，在npn层叠结构上形成源电极。 在电子供给层的漏极区域中形成漏电极，并且在形成在栅极区域的开口区域中形成绝缘膜。 当向栅电极施加大于阈值的正向电压时，形成反型层，漏极电流流动。 通过改变p型GaN层的厚度和杂质浓度，可以控制阈值电压。 由于漂移层，栅极电极和漏电极之间的电场浓度被松弛，并且耐电压提高。

公开(公告)号：US08283700B2

公开(公告)日：2012-10-09

申请号：US13072798

申请日：2011-03-28

申请人： Yoshihiro Sato ,  Takehiko Nomura

发明人： Yoshihiro Sato ,  Takehiko Nomura

IPC分类号： H01L29/66

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/66462

摘要： A field effect transistor includes a channel layer of group-III nitride-based compound semiconductor; an interface layer formed on the channel layer and of AlXInYGa1-X-YN, where 0≦X≦1, 0≦Y≦1, and X+Y≦1, which is different from material of the channel layer, an electron supplying layer of group-III nitride-based compound semiconductor formed on the interface layer, the electron supplying layer having a recess that reaches the interface layer; a source electrode and a drain electrode formed on the electron supplying layer on respective sides of the recess; an insulating film formed on an inner surface of the recess; and a gate electrode formed on the insulating film.

摘要翻译： 场效应晶体管包括III族氮化物基化合物半导体的沟道层; 形成在沟道层上的界面层和AlXInYGa1-X-YN，其中0＆nlE; X＆lt; ll; 1,0