公开(公告)号：US06755910B2

公开(公告)日：2004-06-29

申请号：US10230987

申请日：2002-08-30

申请人： Hiroshi Morita ,  Hideki Watanabe

发明人： Hiroshi Morita ,  Hideki Watanabe

IPC分类号： C30B1520

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203 ,  Y10T117/1032 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： A method capable of securely pulling up a heavy single crystal is described. Using an apparatus comprising a crucible for storing a molten material for a single crystal; a heater for heating the molten material; means for pulling up the single crystal to grow by bringing a seed crystal in contact with the surface of the molten material in the crucible; and a flow-regulating member surrounding the single crystal at the growth area for shielding the heat of radiation and for regulating inert gas flow, the method comprises the following steps of setting the distance between the lower end of the flow-regulating member and the surface of the molten material to be a first distance D1 when the seed crystal comes into contact with the surface of the molten material in said crucible; forming the single crystal at the neck portion; thereafter setting the distance between the lower end of the flow-regulating member and the surface of the molten material to be a second distance D2 where D1 (mm)>D2 (mm); and forming the single crystal at the shoulder portion and subsequently forming the single crystal at the body portion. A dislocation-free single crystal having a heavy weight can be produced with a high crystal quality, and the method is applicable to various operation modes at which the apparatus is operated under various conditions of crystal growth.

摘要翻译： 描述了能够牢固地拉起重单晶的方法。 使用包括用于存储用于单晶的熔融材料的坩埚的装置; 用于加热熔融材料的加热器; 通过使晶种与坩埚中的熔融材料的表面接触来拉高单晶生长的装置; 以及围绕生长区域的单晶的流动调节构件，用于屏蔽辐射热并调节惰性气体流动，该方法包括以下步骤：设置流量调节构件的下端与表面之间的距离 当所述晶种与所述坩埚中的熔融材料的表面接触时，所述熔融材料为第一距离D1; 在颈部形成单晶; 然后将流量调节构件的下端与熔融材料的表面之间的距离设定为D1（mm）> D2（mm）的第二距离D2; 并在肩部形成单晶，随后在体部形成单晶。 可以制造具有高重量的无位错的单晶，具有高的晶体质量，并且该方法适用于在各种晶体生长条件下操作该装置的各种操作模式。

公开(公告)号：US06348095B1

公开(公告)日：2002-02-19

申请号：US09570914

申请日：2000-05-15

申请人： Hideki Watanabe ,  Hiroshi Morita

发明人： Hideki Watanabe ,  Hiroshi Morita

IPC分类号： C30B1520

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/22 ,  Y10T117/1008 ,  Y10T117/1068 ,  Y10T117/1072

摘要： The present invention was achieved in order to provide a method for pulling a single crystal, wherein a single crystal hanging portion makes it possible to pull even a heavy single crystal safely, a new cost related to a seed crystal is not caused by the use of a general and usual seed crystal, the time required for the process can be shortened by making the single crystal hanging portion dislocation-free at a high speed, and even a seed crystal containing a few dislocations can be made dislocation-free, so that a seed crystal to which a few dislocations were induced can be reused without replacement, and an apparatus for pulling a single crystal. The method for pulling a single crystal wherein a single crystal is grown by pulling a seed crystal after dipping the seed crystal into a melt within a crucible, comprises bringing the seed crystal into contact with the melt, further dipping the seed crystal into the melt while the vicinity of the interface between the seed crystal and the melt is heated using an auxiliary heating means, stopping the heating with the auxiliary heating means, and pulling a single crystal without forming a neck.

摘要翻译： 本发明是为了提供一种拉制单晶的方法而实现的，其中单晶悬挂部分使得可以安全地拉出重的单晶，与晶种有关的新成本不是由于使用 一般和通常的晶种，通过使单晶悬挂部分高速无位错，可以缩短处理所需的时间，甚至可以使含有少量位错的晶种无错位，从而使 引起少量位错的晶种可以重复使用而不需要更换，以及用于拉出单晶的装置。 拉晶单晶的方法，其中在将晶种浸入坩埚内的熔体中之后通过拉晶晶来生长单晶，包括使晶种与熔体接触，进一步将晶种浸入熔体中，同时 使用辅助加热装置加热籽晶和熔体之间的界面附近，用辅助加热装置停止加热，并且拉制单晶而不形成颈部。

公开(公告)号：US09148713B2

公开(公告)日：2015-09-29

申请号：US13489648

申请日：2012-06-06

申请人： Tomofumi Miyamoto ,  Hideki Watanabe

发明人： Tomofumi Miyamoto ,  Hideki Watanabe

IPC分类号： H04R1/02 ,  H04R5/02

CPC分类号： H04R1/02 ,  H04R1/025

摘要： According to at least one embodiment, a television includes a housing further including a pair of corner portions and an enclosed space on an inner side thereof, a pair of speaker boxes housed in the enclosed space in vicinities of the corner portions, a pair of speakers housed in the speaker boxes respectively in a direction which crosses a thickness direction of the housing, and each of the speaker boxes further includes a first duct to guide sounds from a first side of the respective speaker to the respective first opening portion and a second duct to guide sounds from a second side of the respective speaker towards the enclosed space.

摘要翻译： 根据至少一个实施例，电视机包括还包括一对角部和在其内侧上的封闭空间的壳体，一对容纳在角部附近的封闭空间中的扬声器箱，一对扬声器 分别沿着与壳体的厚度方向交叉的方向容纳在扬声器箱中，并且每个扬声器盒还包括第一导管，用于将声音从相应扬声器的第一侧引导到相应的第一开口部分，第二导管 以将声音从相应扬声器的第二侧引向封闭空间。

公开(公告)号：US20150131425A9

公开(公告)日：2015-05-14

申请号：US13545688

申请日：2012-07-10

申请人： Goro Fujita ,  Tsutomu Maruyama ,  Masaru Kuramoto ,  Hideki Watanabe

发明人： Goro Fujita ,  Tsutomu Maruyama ,  Masaru Kuramoto ,  Hideki Watanabe

IPC分类号： G11B7/126 ,  G11B7/1374 ,  H01S5/065 ,  H01S5/0625 ,  H01S5/026 ,  G11B7/1275 ,  H01S5/34 ,  H01S5/343

CPC分类号： G11B7/126 ,  B82Y20/00 ,  G11B7/127 ,  G11B7/1275 ,  G11B7/128 ,  G11B2007/00457 ,  H01S5/0261 ,  H01S5/0602 ,  H01S5/06253 ,  H01S5/06255 ,  H01S5/0658 ,  H01S5/34333

摘要： Provided is a recording apparatus including a self-excited oscillation semiconductor laser that has a double quantum well separate confinement heterostructure and includes a saturable absorber section to which a negative bias voltage is applied and a gain section into which a gain current is injected, an optical separation unit, an objective lens, a light reception element, a pulse detection unit, a reference signal generation unit, a phase comparison unit, a recording signal generation unit, and a control unit.

摘要翻译： 提供了一种记录装置，其包括具有双量子阱分离限制异质结构的自激振荡半导体激光器，并且包括施加负偏置电压的可饱和吸收部分和注入增益电流的增益部分，光学 分离单元，物镜，光接收元件，脉冲检测单元，参考信号生成单元，相位比较单元，记录信号生成单元和控制单元。

公开(公告)号：US08672049B2

公开(公告)日：2014-03-18

申请号：US11480974

申请日：2006-07-06

申请人： Junichi Tokairin ,  Kenji Kataoka ,  Yukio Terunuma ,  Hideki Watanabe ,  Shigeru Ishikawa ,  Shinki Ohtsu

发明人： Junichi Tokairin ,  Kenji Kataoka ,  Yukio Terunuma ,  Hideki Watanabe ,  Shigeru Ishikawa ,  Shinki Ohtsu

IPC分类号： E02D7/02

CPC分类号： B25D11/106 ,  B25D16/006 ,  B25D17/24 ,  B25D2250/345 ,  B25D2250/371

摘要： A vibration drill unit capable of obtaining an intensive drilling force. The vibration drill unit includes a first ratchet, anon-rotatable second ratchet having a claw engageable with the claw of the first ratchet, and a main body frame for accommodating a motor, a spindle, the first ratchet and the second ratchet. The respective claws of the first ratchet and the second ratchet include the first inclined surfaces formed so as to be engaged in the rotation direction by rotations of the first ratchet and so as to be separated from each other, the second inclined surfaces having greater inclination in the reversed direction than the first inclined surfaces, top parts that link the upper parts of both inclined surfaces to each other, and flat parts that link the bottom parts of both inclined surfaces to each other.

摘要翻译： 一种能够获得强力钻井力的振动钻机。 所述振动钻单元包括具有与所述第一棘轮的爪接合的爪的第一棘轮，可旋转的第二棘轮，以及用于容纳马达，主轴，所述第一棘轮和所述第二棘轮的主体框架。 第一棘轮和第二棘轮的各个爪包括形成为通过第一棘轮的旋转而沿旋转方向接合并且彼此分离的第一倾斜表面， 与第一倾斜表面相反的方向，将两个倾斜表面的上部彼此连接的顶部以及将两个倾斜表面的底部彼此连接的平坦部分。

公开(公告)号：US08442079B2

公开(公告)日：2013-05-14

申请号：US13035540

申请日：2011-02-25

申请人： Tomoyuki Oki ,  Masaru Kuramoto ,  Masao Ikeda ,  Takao Miyajima ,  Hideki Watanabe ,  Hiroyuki Yokoyama

发明人： Tomoyuki Oki ,  Masaru Kuramoto ,  Masao Ikeda ,  Takao Miyajima ,  Hideki Watanabe ,  Hiroyuki Yokoyama

IPC分类号： H01S3/098

摘要： Provided is a driving method of a mode-locked semiconductor laser device comprising a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer having an emission region and a second compound semiconductor layer are successively laminated, a second electrode, and a first electrode. The laminated structure is formed on a compound semiconductor substrate having polarity, the third compound semiconductor layer includes a quantum well structure having a well layer and a barrier layer. The well layer has a depth of 1 nm or more and 10 nm or less. The barrier layer has an impurity doping density of 2×1018 cm−3 or more and 1×1020 cm−3 or less. An optical pulse is generated in the emission region by passing a current from the second electrode to the first electrode via the laminated structure.

摘要翻译： 提供了一种锁模半导体激光器件的驱动方法，其包括层叠结构，其中第一化合物半导体层，具有发射区域的第三化合物半导体层和第二化合物半导体层被连续层压，第二电极和 第一电极。 层叠结构形成在具有极性的化合物半导体基板上，第三化合物半导体层包括具有阱层和阻挡层的量子阱结构。 阱层的深度为1nm以上且10nm以下。 势垒层的杂质掺杂密度为2×1018cm-3以上且1×1020cm-3以下。 通过将电流从第二电极通过层压结构传递到第一电极，在发射区域中产生光脉冲。

公开(公告)号：US08401311B2

公开(公告)日：2013-03-19

申请号：US12400936

申请日：2009-03-10

申请人： Koji Aoyama ,  Hideki Watanabe ,  Hiroaki Yamajo ,  Masuyoshi Kurokawa

发明人： Koji Aoyama ,  Hideki Watanabe ,  Hiroaki Yamajo ,  Masuyoshi Kurokawa

IPC分类号： G06K9/62

CPC分类号： H04N19/117 ,  H04N19/137 ,  H04N19/14 ,  H04N19/142 ,  H04N19/176 ,  H04N19/86

摘要： An image processing device includes: a step calculator configured to calculate, as a step, a difference in pixel values of pixels in a neighborhood with respect to each pixel in an image; a classifier configured to classify the pixels into classes for areas of the steps; a boundary ratio calculator configured to calculate, as a boundary ratio, a ratio of the number of pixels at a block boundary for each of the classes; and a block noise strength determinator configured to determine, as a block noise strength of the image, the step that is larger than a predetermined threshold and that is at a class having a largest value.

摘要翻译： 一种图像处理装置，包括：步骤计算器，被配置为相对于图像中的每个像素计算邻域中的像素的像素值的差分，作为步骤; 配置为将像素分类为步骤区域的分类器; 边界比率计算器，被配置为计算每个类别的块边界处的像素数的比例作为边界比; 以及块噪声强度判定器，被配置为将所述图像的块噪声强度确定为大于预定阈值并且处于具有最大值的类的步长。

公开(公告)号：US08290005B2

公开(公告)日：2012-10-16

申请号：US13212244

申请日：2011-08-18

申请人： Hiroyuki Yokoyama ,  Shunsuke Kono ,  Tomoyuki Oki ,  Masao Ikeda ,  Takao Miyajima ,  Hideki Watanabe

发明人： Hiroyuki Yokoyama ,  Shunsuke Kono ,  Tomoyuki Oki ,  Masao Ikeda ,  Takao Miyajima ,  Hideki Watanabe

IPC分类号： H01S3/13

CPC分类号： H01S5/06216 ,  H01S5/0428

摘要： An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.

公开(公告)号：US20120236886A1

公开(公告)日：2012-09-20

申请号：US13417998

申请日：2012-03-12

申请人： Tomoyuki Oki ,  Masaru Kuramoto ,  Rintaro Koda ,  Hideki Watanabe ,  Hiroyuki Yokoyama

发明人： Tomoyuki Oki ,  Masaru Kuramoto ,  Rintaro Koda ,  Hideki Watanabe ,  Hiroyuki Yokoyama

IPC分类号： H01S5/062 ,  H01S5/028

CPC分类号： H01S5/0602 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/0625 ,  H01S5/1064 ,  H01S5/3063 ,  H01S5/34333 ,  H01S2301/166

摘要： A laser diode element assembly includes: a laser diode element; and a light reflector, in which the laser diode element includes (a) a laminate structure body configured by laminating, in order, a first compound semiconductor layer of a first conductivity type made of a GaN-based compound semiconductor, a third compound semiconductor layer made of a GaN-based compound semiconductor and including a light emission region, and a second compound semiconductor layer of a second conductivity type made of a GaN-based compound semiconductor, the second conductivity type being different from the first conductivity type, (b) a second electrode formed on the second compound semiconductor layer, and (c) a first electrode electrically connected to the first compound semiconductor layer, the laminate structure body includes a ridge stripe structure, and a minimum width Wmin and a maximum width Wmax of the ridge stripe structure satisfy 1

摘要翻译： 激光二极管元件组件包括：激光二极管元件; 和光反射器，其中激光二极管元件包括（a）层叠结构体，其按顺序层叠由GaN基化合物半导体制成的第一导电类型的第一化合物半导体层，第三化合物半导体层 由GaN系化合物半导体构成的发光区域和由GaN系化合物半导体构成的第二导电型的第二化合物半导体层，第二导电型与第一导电型不同，（b） 形成在所述第二化合物半导体层上的第二电极，和（c）与所述第一化合物半导体层电连接的第一电极，所述层叠结构体包括脊条结构，并且所述脊的最小宽度Wmin和最大宽度Wmax 条纹结构满足1

公开(公告)号：US08218312B2

公开(公告)日：2012-07-10

申请号：US12953966

申请日：2010-11-24

申请人： Hideki Watanabe ,  Shigeo Hayashi

发明人： Hideki Watanabe ,  Shigeo Hayashi

IPC分类号： H05K7/20

CPC分类号： G06F1/203 ,  F28D15/0233 ,  F28D15/0275

摘要： According to one embodiment, an electronic apparatus includes a printed circuit board, a heat pipe, a fan unit and a fixing unit. The heat pipe has a first end physically fixed to and thermally connected to a first circuit component, and a second end opposite to the first end. The fan unit is provided in the vicinity of the second end of the heat pipe, and cools the second end. The fixing unit fixes the position of the heat pipe at a position different from the position of the first circuit component.

摘要翻译： 根据一个实施例，电子设备包括印刷电路板，热管，风扇单元和定影单元。 热管具有物理地固定并热连接到第一电路部件的第一端和与第一端相对的第二端。 风扇单元设置在热管的第二端附近，并冷却第二端。 固定单元将热管的位置固定在与第一电路部件的位置不同的位置处。