Polishing Slurry for Cmp
    3.
    发明申请
    Polishing Slurry for Cmp 审中-公开
    抛光浆料为Cmp

    公开(公告)号:US20080105651A1

    公开(公告)日:2008-05-08

    申请号:US11572321

    申请日:2005-08-09

    IPC分类号: C09K13/00 C03C15/00

    CPC分类号: H01L21/3212 C09G1/02

    摘要: A polishing liquid for CMP has a composition loaded with, for example, an inorganic salt, a protective film forming agent and a surfactant capable of imparting a dissolution accelerating activity to enlarge a difference between polishing speed under non-load and polishing speed under load. By virtue of this polishing liquid for CMP, there can be simultaneously accomplished a speed increase for increasing CMP productivity, and wiring planarization for miniaturization and multilayer formation of wiring.

    摘要翻译: 用于CMP的抛光液具有负载有例如无机盐,保护膜形成剂和能够赋予溶解促进活性的表面活性剂的组合物,以增加负载下的抛光速度和负载下的抛光速度之间的差异。 由于该CMP用抛光液,可以同时实现提高CMP生产率的速度增加,以及用于小型化和布线的多层形成的布线平面化。

    Abrasive-free polishing slurry and CMP process
    4.
    发明申请
    Abrasive-free polishing slurry and CMP process 审中-公开
    无磨料抛光浆和CMP工艺

    公开(公告)号:US20070147551A1

    公开(公告)日:2007-06-28

    申请号:US11643691

    申请日:2006-12-22

    IPC分类号: H03D1/00

    CPC分类号: C09G1/04

    摘要: A CMP slurry is mixed with an oxidant in polishing and contains a copper rust inhibitor, a water-soluble polymer, a pH controller capable of forming a complex with copper, and water, and is substantially free from abrasive. The CMP slurry effectively reduces dishing in chemical polishing of copper and forms reliable wiring. Preferably, the contents of the rust inhibitor, the water-soluble polymer, and the oxidant are 0.1 to 5 wt %, 0.05 to 5 wt %, and 0.01 to 5M relative to 1 liter of the CMP slurry, respectively, and the amount of the pH controller is a necessary amount for adjusting pH of the CMP slurry to 1.5 to 2.5.

    摘要翻译: 将CMP浆料与抛光中的氧化剂混合,并含有铜锈病抑制剂,水溶性聚合物,能够与铜形成络合物的pH控制剂和水,并且基本上不含研磨剂。 CMP浆料有效减少了铜化学抛光中的凹陷,形成了可靠的布线。 防锈剂,水溶性聚合物和氧化剂的含量优选分别相对于1升CMP浆料为0.1〜5重量%,0.05〜5重量%,0.01〜5微米, pH控制器是将CMP浆料的pH调节至1.5至2.5的必需量。

    Magnetic recording medium, method for fabricating the same, and magnetic storage device
    5.
    发明授权
    Magnetic recording medium, method for fabricating the same, and magnetic storage device 失效
    磁记录介质,其制造方法和磁存储装置

    公开(公告)号:US08318332B2

    公开(公告)日:2012-11-27

    申请号:US12819661

    申请日:2010-06-21

    IPC分类号: G11B5/66

    CPC分类号: G11B5/855 G11B5/722

    摘要: A discrete track medium and a patterned medium that are excellent in both magnetic recording properties and corrosion resistance are realized. The medium has a magnetic recording layer, which includes a magnetic region formed in a projection portion of a projection/recess pattern over a substrate and a filler region embedded in a recess portion of the projection/recess pattern, and an organic compound, which exhibits corrosion inhibition action for cobalt or cobalt alloys, between the magnetic region and the filler region.

    摘要翻译: 实现了磁记录性能和耐腐蚀性优异的离散轨道介质和图案化介质。 介质具有磁记录层,其包括形成在基板上的突出/凹陷图案的突出部分中的磁性区域和嵌入在突出/凹陷图案的凹部中的填充区域以及有机化合物,其表现出 对于钴或钴合金,在磁性区域和填料区域之间的腐蚀抑制作用。

    POLISHING SLURRY FOR CMP
    6.
    发明申请
    POLISHING SLURRY FOR CMP 审中-公开
    CMP抛光浆

    公开(公告)号:US20110027994A1

    公开(公告)日:2011-02-03

    申请号:US12900926

    申请日:2010-10-08

    IPC分类号: H01L21/306

    CPC分类号: H01L21/3212 C09G1/02

    摘要: A polishing liquid for CMP has a composition loaded with, for example, an inorganic salt, a protective film forming agent and a surfactant capable of imparting a dissolution accelerating activity to enlarge a difference between polishing speed under non-load and polishing speed under load. By virtue of this polishing liquid for CMP, there can be simultaneously accomplished a speed increase for increasing CMP productivity, and wiring planarization for miniaturization and multilayer formation of wiring.

    摘要翻译: 用于CMP的抛光液具有负载有例如无机盐,保护膜形成剂和能够赋予溶解促进活性的表面活性剂的组合物,以增加负载下的抛光速度和负载下的抛光速度之间的差异。 由于该CMP用抛光液,可以同时实现提高CMP生产率的速度增加,以及用于小型化和布线的多层形成的布线平面化。

    Magnetic media and magnetic recording devices using fluorine compounds
    9.
    发明授权
    Magnetic media and magnetic recording devices using fluorine compounds 有权
    使用氟化合物的磁介质和磁记录装置

    公开(公告)号:US08628869B2

    公开(公告)日:2014-01-14

    申请号:US13361896

    申请日:2012-01-30

    IPC分类号: G11B5/66

    摘要: According to one embodiment, a lubricant includes a perfluoropolyether having a chemical structure of: wherein Rf is at least one of: —CF2O(CF2CF2O)m(CF2O)nCF2— and —CF2CF2O(CF2CF2CF2O)kCF2CF2—, with m representing 0 or a positive integer, n representing 0 or a positive integer, and k representing 0 or a positive integer, and wherein R1 to R4 are selected from a group consisting of —H or with at least one of R1 to R4 being

    摘要翻译: 根据一个实施方案,润滑剂包括具有以下化学结构的全氟聚醚:其中Rf为至少一种:-CF 2 O(CF 2 CF 2 O)m(CF 2 O)n CF 2 - 和-CF 2 CF 2 O(CF 2 CF 2 CF 2 O)k CF 2 CF 2 - ,其中m表示0或 正整数,n表示0或正整数,k表示0或正整数,并且其中R 1至R 4选自-H或与R 1至R 4中的至少一个为