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1.发明申请Electrode for use in electrochemical device, solid electrolyte/electrode assembly, and production method thereof 失效用于电化学装置的电极，固体电解质/电极组件及其制造方法公开(公告)号：US20070059584A1
公开(公告)日：2007-03-15
申请号：US11518204
申请日：2006-09-11
CPC分类号： C25D1/00 , C25D1/006 , C25D9/04 , C25D11/02 , C25D11/045 , G01N27/4045 , H01M4/0404 , H01M4/134 , H01M4/32 , H01M4/38 , H01M4/387 , H01M4/8807 , H01M4/8817 , H01M4/8853 , H01M4/92 , H01M10/0525 , Y02E60/122
摘要： In an electrode in electrochemical device, particularly an anode lithium ion secondary battery, a cathode for use in alkali storage battery, an electrode for use in fuel cell, or a capacitor electrode, a metal structure has nano size micro-pillars is constructed with an electrode active material being formed on the surface of the metal structure. The metal structure having nano size micro-pillars can be formed, for example, by forming a metal layer as an electrode material by plating to the surface of a substrate having pores and then removing the substrate by dissolution, the metal filled in the pores of the substrate to form a group of micro-pillars. And the active material can be formed by depositing metal by plating. Since the active material is in direct contact with the conductive skeleton, the conducting agent for connecting the active materials to each other may not be added at all.
摘要翻译： 在电化学装置中的电极中，特别是阳极锂离子二次电池，碱性蓄电池用阴极，燃料电池用电极或电容电极中，金属结构具有纳米尺寸的微柱， 电极活性材料形成在金属结构的表面上。 具有纳米尺寸微柱的金属结构可以通过例如通过将具有孔的基板的表面电镀形成作为电极材料的金属层，然后通过溶解除去基板而形成， 底物形成一组微柱。 并且活性物质可以通过电镀沉积金属而形成。 由于活性物质与导电骨架直接接触，所以可能根本不添加用于将活性物质彼此连接的导电剂。
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2.发明授权Electrode for use in electrochemical device, solid electrolyte/electrode assembly, and production method thereof 失效用于电化学装置的电极，固体电解质/电极组件及其制造方法公开(公告)号：US07875387B2
公开(公告)日：2011-01-25
申请号：US11518204
申请日：2006-09-11
CPC分类号： C25D1/00 , C25D1/006 , C25D9/04 , C25D11/02 , C25D11/045 , G01N27/4045 , H01M4/0404 , H01M4/134 , H01M4/32 , H01M4/38 , H01M4/387 , H01M4/8807 , H01M4/8817 , H01M4/8853 , H01M4/92 , H01M10/0525 , Y02E60/122
摘要： In an electrode in electrochemical device, particularly an anode lithium ion secondary battery, a cathode for use in alkali storage battery, an electrode for use in fuel cell, or a capacitor electrode, a metal structure has nano size micro-pillars is constructed with an electrode active material being formed on the surface of the metal structure. The metal structure having nano size micro-pillars can be formed, for example, by forming a metal layer as an electrode material by plating to the surface of a substrate having pores and then removing the substrate by dissolution, the metal filled in the pores of the substrate to form a group of micro-pillars. And the active material can be formed by depositing metal by plating. Since the active material is in direct contact with the conductive skeleton, the conducting agent for connecting the active materials to each other may not be added at all.
摘要翻译： 在电化学装置中的电极中，特别是阳极锂离子二次电池，碱性蓄电池用阴极，燃料电池用电极或电容电极中，金属结构具有纳米尺寸的微柱， 电极活性材料形成在金属结构的表面上。 具有纳米尺寸微柱的金属结构可以通过例如通过将具有孔的基板的表面电镀形成作为电极材料的金属层，然后通过溶解除去基板而形成， 底物形成一组微柱。 并且活性物质可以通过电镀沉积金属而形成。 由于活性物质与导电骨架直接接触，所以可能根本不添加用于将活性物质彼此连接的导电剂。
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公开(公告)号：US06680540B2
公开(公告)日：2004-01-20
申请号：US09799533
申请日：2001-03-07
IPC分类号： H01L2348
CPC分类号： H01L21/76849 , H01L21/288 , H01L21/2885 , H01L21/76807 , H01L21/76811 , H01L21/76829 , H01L21/76835 , H01L21/76843 , H01L21/76864 , H01L21/76865 , H01L21/76874 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： In order to prevent a rise in resistance due to oxidation of copper wiring and diffusion of copper, a semiconductor device is provided which contains a wire protective film 1 covering the top of the copper wiring 2 formed in the insulation film and a barrier film surrounding the side and bottom of the copper wiring. The wire protective film and/or barrier film is formed with a cobalt alloy film containing (1) cobalt, (2) at least one of chromium, molybdenum, tungsten, rhenium, thallium and phosphorus, and (3) boron.
摘要翻译： 为了防止由于铜布线的氧化和铜的扩散引起的电阻上升，提供了一种半导体器件，其包含覆盖在绝缘膜上形成的铜布线2的顶部的导线保护膜1和围绕该绝缘膜的阻挡膜 侧面和底部的铜线。 线保护膜和/或阻挡膜由含有（1）钴，（2）铬，钼，钨，铼，铊和磷中的至少一种的钴合金膜和（3）硼形成。
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公开(公告)号：US09076780B2
公开(公告)日：2015-07-07
申请号：US13994417
申请日：2011-12-13
申请人： Yoshinori Negishi , Hiroshi Nakano , Eiichi Ide , Haruo Akahoshi , Motoko Harada , Toshiaki Ishii
发明人： Yoshinori Negishi , Hiroshi Nakano , Eiichi Ide , Haruo Akahoshi , Motoko Harada , Toshiaki Ishii
IPC分类号： H01L23/482 , H01L23/495 , H01L23/00 , H01L23/373 , H01L21/48 , H01L21/56 , H01L23/36 , H01L23/433 , H01L23/31
CPC分类号： H01L23/49568 , H01L21/4803 , H01L21/4807 , H01L21/481 , H01L21/4871 , H01L21/4878 , H01L21/4882 , H01L21/565 , H01L23/3107 , H01L23/36 , H01L23/373 , H01L23/3731 , H01L23/3735 , H01L23/4334 , H01L23/49582 , H01L24/26 , H01L24/27 , H01L24/28 , H01L24/45 , H01L24/48 , H01L2224/32245 , H01L2224/451 , H01L2224/45124 , H01L2224/45144 , H01L2224/48245 , H01L2224/48247 , H01L2224/48472 , H01L2224/73265 , H01L2924/00014 , H01L2924/12044 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/00 , H01L2224/05599 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： The present invention aims at providing a power module and a lead frame for the power module which can enhance adhesion between a heat sink and an insulating resin sheet while maintaining heat radiation properties. The power module includes: the lead frame including a conductor plate formed from Cu or a Cu alloy, and an Al film formed at least on the other side, opposite to one side on which to mount a semiconductor device, of the conductor plate; the semiconductor device mounted on the one side of the conductor plate; a sealing resin which seals at least the semiconductor device and the conductor plate; and an insulating resin sheet adhered to the conductor plate through the Al film therebetween.
摘要翻译： 本发明旨在提供一种功率模块的功率模块和引线框架，其能够在保持散热性能的同时提高散热器和绝缘树脂片材之间的粘附性。 功率模块包括：引线框架，包括由Cu或Cu合金形成的导体板，以及至少形成在导体板的至少另一侧的与安装半导体器件的一侧相反的Al膜; 所述半导体器件安装在所述导体板的一侧上; 至少密封半导体器件和导体板的密封树脂; 以及通过它们之间的Al膜粘附到导体板的绝缘树脂片。
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5.发明授权Semiconductor device, manufacturing method of semiconductor device, semiconductor manufacturing and inspecting apparatus, and inspecting apparatus 有权半导体装置，半导体装置的制造方法，半导体制造和检查装置以及检查装置公开(公告)号：US08946895B2
公开(公告)日：2015-02-03
申请号：US12389479
申请日：2009-02-20
申请人： Takahiko Kato , Hiroshi Nakano , Haruo Akahoshi , Yuuji Takada , Yoshimi Sudo , Tetsuo Fujiwara , Itaru Kanno , Tomoryo Shono , Yukinori Hirose
发明人： Takahiko Kato , Hiroshi Nakano , Haruo Akahoshi , Yuuji Takada , Yoshimi Sudo , Tetsuo Fujiwara , Itaru Kanno , Tomoryo Shono , Yukinori Hirose
IPC分类号： H01L23/48 , H01L23/532 , H01L21/768
CPC分类号： H01L22/12 , H01L21/76843 , H01L21/76873 , H01L21/76877 , H01L21/76879 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having Cu wiring including a basic crystal structure which can reduce surface voids, and an inspecting technique for the semiconductor device. In the semiconductor device, surface voids can be reduced down to 1/10 or less of a current practical level by specifying a barrier layer and a seed layer and setting a proportion (frequency) of occupation of a coincidence site lattice (CSL) boundary having a grain boundary Sigma value 27 or less to all crystal grain boundaries of a Cu wiring to 60% or higher. Alternatively, a similar effect of surface void reduction can be obtained by specifying a barrier layer and a seed layer and setting a proportion (frequency) of occupation of a coincidence site lattice (CSL) boundary having a grain boundary Sigma value 3 to all crystal grain boundaries of a Cu wiring to 40% or higher.
摘要翻译： 具有包括可以减小表面空隙的碱性晶体结构的Cu布线的半导体器件和用于半导体器件的检查技术。 在半导体装置中，通过指定阻挡层和种子层，并设定具有一致位点网格（CSL）边界的占有比例（频率），表面空隙可以降低到当前实用水平的1/10以下，具有 对于Cu布线的所有晶界，晶界Sigma值为27以下，为60％以上。 或者，可以通过指定阻挡层和种子层并且将具有晶界Sigma值3的重合位点晶格（CSL）边界的占有比例（频率）设置为全部晶粒，可以获得类似的表面空隙降低效果 Cu布线的边界为40％以上。
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公开(公告)号：US06815357B2
公开(公告)日：2004-11-09
申请号：US10299838
申请日：2002-11-20
IPC分类号： H01L21311
CPC分类号： C25D7/12 , C25D5/02 , C25D5/22 , C25D17/001 , H01L21/288 , H01L21/76849 , H01L21/76883
摘要： A process for selectively forming a metal barrier layer on a surface of an interconnect of a wiring substrate comprising the steps of abrading the substrate and simultaneously feeding onto the substrate a plating solution having said metal dissolved therein. The abrading step comprises contacting the substrate against an abrasive surface and causing relative linear and/or rotary motion between the abrasive surface and the substrate while the substrate is in contact with the abrasive surface. Growth of the metal barrier layer on a portion of the wiring substrate other than the interconnect layer is suppressed and the metal barrier layer thus formed is thinner, exhibits improved uniformity and superior prevention against Cu diffusion.
摘要翻译： 一种用于在布线基板的互连件的表面上选择性地形成金属阻挡层的方法，包括以下步骤：研磨基板，同时将具有溶解在其中的金属的电镀溶液同时进料到基板上。 研磨步骤包括使基底抵靠研磨表面，并且在基底与研磨表面接触的同时使研磨表面和基底之间发生相对的线性和/或旋转运动。 抑制布线基板以外的配线层的部分上的金属阻挡层的生长，由此形成的金属阻挡层更薄，显示出均匀性提高，防止Cu扩散的优异性。
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7.发明授权公开(公告)号：US07579275B2
公开(公告)日：2009-08-25
申请号：US10253480
申请日：2002-09-25
CPC分类号： H01L21/76877 , C25D7/12 , C25D17/001 , H01L21/2885
摘要： In electric plating of supplying a current between an anode electrode and a cathode electrode as a plated body immersed in a plating solution thereby forming a plated film comprising a conductor on a surface of the cathode electrode, a preliminary electrolytic electrode that comes in contact with the plating solution before the cathode electrode comes in contact with the plating solution is disposed, and the cathode electrode is brought into contact with the plating solution while supplying a preliminary electrolytic current between the preliminary electrolytic electrode and the anode electrode, whereby a uniform plated film with no voids can be formed while suppressing dissolution of the underlying conductive film in the electric plating treatment.
摘要翻译： 在将阳极电极和阴极电极之间的电流供给到浸渍在电镀液中的电镀体的电镀中，由此在阴极电极的表面形成包含导体的电镀膜，与该电解液接触的预备电解电极 配置阴极与镀液接触之前的镀液，并且在预备电解电极和阳极电极之间提供预备的电解电流的同时使阴极与镀液接触，由此形成均匀的镀膜 在电镀处理中，在抑制下面的导电膜的溶解的同时，不会形成空隙。
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8.发明申请Electroless plating method, electroless plating device, and production method and production device of semiconductor device 审中-公开化学镀方法，化学镀装置以及半导体装置的制造方法及制造装置公开(公告)号：US20060102485A1
公开(公告)日：2006-05-18
申请号：US11329093
申请日：2006-01-11
IPC分类号： C25D5/00
CPC分类号： C23C18/1619 , C23C18/1682 , C23C18/1683 , H01L21/288 , H01L21/76843 , H01L21/76849 , H01L21/76874 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： The invention is purposed to reduce the amount of the electroless plating solution used for plating, to facilitate compositional control of the plating solution, and to prevent degradation of quality of the plating film (deposit) by oxygen dissolved in the plating solution. An electroless plating method in which a previously prepared electroless plating solution is exposed to a depressurized atmosphere to decrease the gas components existing in the solution, and while maintaining the plating solution in the form of a continuous thin layer, the surface to be plated of the substrate on which to form an electroless plating film is brought into contact with said layer of the plating solution and maintained in this state for a required period of time to perform electroless plating. An electroless plating device, and a production method and a production device of semiconductor devices are also disclosed.
摘要翻译： 本发明旨在减少用于电镀的化学镀溶液的量，以便于电镀溶液的组成控制，并且防止溶解在电镀溶液中的氧的电镀膜（沉积物）的质量降低。 一种化学镀方法，其中预先制备的化学镀溶液暴露于减压气氛中以减少溶液中存在的气体组分，并且在将镀液保持为连续薄层形式的同时，镀覆表面 使形成无电解镀膜的基板与所述电镀液层接触，并在该状态下保持需要的时间以进行无电镀。 还公开了一种化学镀装置，以及半导体装置的制造方法和制造装置。
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9.发明申请Electroless plating method, electroless plating device, and production method and production device of semiconductor device 审中-公开化学镀方法，化学镀装置以及半导体装置的制造方法及制造装置公开(公告)号：US20050022745A1
公开(公告)日：2005-02-03
申请号：US10898201
申请日：2004-07-26
IPC分类号： C23C18/16 , B05D1/18 , H01L21/288 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/532
CPC分类号： C23C18/1619 , C23C18/1682 , C23C18/1683 , H01L21/288 , H01L21/76843 , H01L21/76849 , H01L21/76874 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： The invention is purposed to reduce the amount of the electroless plating solution used for plating, to facilitate compositional control of the plating solution, and to prevent degradation of quality of the plating film (deposit) by oxygen dissolved in the plating solution. An electroless plating method in which a previously prepared electroless plating solution is exposed to a depressurized atmosphere to decrease the gas components existing in the solution, and while maintaining the plating solution in the form of a continuous thin layer, the surface to be plated of the substrate on which to form an electroless plating film is brought into contact with said layer of the plating solution and maintained in this state for a required period of time to perform electroless plating. An electroless plating device, and a production method and a production device of semiconductor devices are also disclosed.
摘要翻译： 本发明旨在减少用于电镀的化学镀溶液的量，以便于电镀溶液的组成控制，并且防止溶解在电镀溶液中的氧的电镀膜（沉积物）的质量降低。 一种化学镀方法，其中预先制备的化学镀溶液暴露于减压气氛中以减少溶液中存在的气体组分，并且在将镀液保持为连续薄层形式的同时，镀覆表面 使形成无电解镀膜的基板与所述电镀液层接触，并在该状态下保持需要的时间以进行无电镀。 还公开了一种化学镀装置，以及半导体装置的制造方法和制造装置。
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公开(公告)号：US20110114368A1
公开(公告)日：2011-05-19
申请号：US13001848
申请日：2009-06-25
申请人： Hiroshi Nakano , Hitoshi Suzuki , Toshio Haba , Haruo Akahoshi
发明人： Hiroshi Nakano , Hitoshi Suzuki , Toshio Haba , Haruo Akahoshi
CPC分类号： H05K3/045 , H05K1/0284 , H05K3/107 , H05K3/241 , H05K2201/09018 , H05K2201/09118 , H05K2203/0723 , Y10T29/49155
摘要： A small-sized electronic circuit component comprising micro-wiring and a method for manufacturing the same are provided. The electronic circuit component is manufactured by a manufacturing method comprising the steps of forming a recessed portion which is to be a three-dimensional wiring in the surface of an insulating base material of the electronic circuit component comprising the wiring, forming a first metal layer which is to be an electroplated conductive layer on the surface of the insulating base material including the recessed portion, selectively forming a second metal layer which is to be the wiring only in the recessed portion which is to be the wiring, and removing the first metal layer formed on the surface other than in the recessed portion which is to be the wiring.
摘要翻译： 提供一种包括微型布线的小尺寸电子电路元件及其制造方法。 电子电路部件通过以下的制造方法制造，该方法包括以下步骤：在包括布线的电子电路部件的绝缘基材的表面中形成作为三维布线的凹部，形成第一金属层， 在包括凹部的绝缘基材的表面上形成电镀导电层，在作为布线的凹部中选择形成作为布线的第二金属层，除去第一金属层 形成在除了作为布线的凹部中的表面上。
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