利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

34 条记录 (耗时 0.049 秒)

    Ferroelectric/high dielectric constant integrated circuit and method of fabricating same
    5.
    发明授权
    Ferroelectric/high dielectric constant integrated circuit and method of fabricating same 失效
    铁电/高介电常数集成电路及其制造方法

    公开(公告)号：US6051858A

    公开(公告)日：2000-04-18

    申请号：US892699

    申请日：1997-07-15

    申请人： Hiroto Uchida ,  Nobuyuki Soyama ,  Katsumi Ogi ,  Michael C. Scott ,  Joseph D. Cuchiaro ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

    发明人： Hiroto Uchida ,  Nobuyuki Soyama ,  Katsumi Ogi ,  Michael C. Scott ,  Joseph D. Cuchiaro ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

    IPC分类号： H01L21/8247 ,  H01L21/02 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  H01L29/76

    CPC分类号： H01L27/11502 ,  H01L28/55

    摘要： A transistor on a silicon substrate is covered by an insulating layer. A conducting plug passes through the insulating layer to the transistor drain. The bottom electrode of a ferroelectric capacitor that directly overlies the plug and drain contacts the plug. The ferroelectric layer is self-patterned and completely overlies the memory cell. A self-patterned sacrificial layer completely overlies the ferroelectric layer. The bottom electrode of the capacitor is completely enclosed by the ferroelectric layer, the insulating layer, and the conducting plug. The sacrificial layer comprises either: a) a metal selected from a first metal group consisting of tantalum, hafnium, tungsten, niobium and zirconium; or b) a metallic compound comprising one or more metals selected from a second group of metals consisting of titanium, tantalum, hafnium, tungsten, niobium and zirconium compounded with one or more metals from a third group of metals consisting of strontium, calcium, barium, bismuth, cadmium, and lead, such as strontium tantalate, tantalum oxide, bismuth deficient strontium bismuth tantalate, strontium titanate, strontium zirconate, strontium niobate, tantalum nitride, and tantalum oxynitride.

    摘要翻译： 硅衬底上的晶体管被​​绝缘层覆盖。 导电插塞通过绝缘层到晶体管漏极。 直接覆盖插头和漏极的铁电电容器的底部电极接触插头。 铁电层是自我构图的，并且完全覆盖在存储单元上。 自图案牺牲层完全覆盖铁电层。 电容器的底部电极被铁电体层，绝缘层和导电插塞完全包围。 牺牲层包括：a）选自由钽，铪，钨，铌和锆组成的第一金属组的金属; 或b）金属化合物，其包含一种或多种金属，所述金属选自由钛，钽，铪，钨，铌和锆组成的第二组金属，所述金属由一种或多种金属组成，所述第三组金属由锶，钙，钡 ，铋，镉和铅，例如钽酸锶，氧化钽，铋铋铋钽酸锶，钛酸锶，锆酸锶，铌酸铌，氮化钽和氮氧化钽。

    Method for forming a pattern of non-volatile ferroelectric thin film memory
    7.
    发明授权
    Method for forming a pattern of non-volatile ferroelectric thin film memory 失效
    用于形成非挥发性铁电薄膜存储器的图案的方法

    公开(公告)号：US5605723A

    公开(公告)日：1997-02-25

    申请号：US434312

    申请日：1995-05-02

    申请人： Katsumi Ogi ,  Tsutomu Atsuki ,  Hiroto Uchida ,  Tadashi Yonezawa ,  Nobuyuki Soyama

    发明人： Katsumi Ogi ,  Tsutomu Atsuki ,  Hiroto Uchida ,  Tadashi Yonezawa ,  Nobuyuki Soyama

    IPC分类号： H01L27/10 ,  G03F7/004 ,  H01L27/115 ,  B05D3/06 ,  B05D3/02 ,  C23C18/00 ,  H05H1/00

    CPC分类号： H01L27/11502 ,  G03F7/004 ,  G03F7/0045 ,  G03F7/0047 ,  Y10S430/168

    摘要： A pattern of a non-volatile high-performance ferroelectric thin film memory is formed by applying a composition containing hydrolytic metal compounds, and a photosensitizer which generates water when irradiated with active rays onto a substrate. The resultant film is exposed to active rays in compliance with a prescribed pattern to form an image and developed with a solvent to remove non-exposed portions, and then the remaining exposed portions are subjected to a heat treatment to convert the exposed portions into a dielectric substance comprising a metal oxide as expressed by the following formula (I):(Bi.sub.2 O.sub.2).sup.2+ (A.sub.m-1 B.sub.m O.sub.3m+1).sup.2-(I)where A is one or more elements selected from the group consisting of Ba, Sr, Pb and Bi; B is one or more elements selected from the group consisting of Ti, Nb and Ta; and m is an integer of from 2 to 5.

    摘要翻译： 通过施加含有水解金属化合物的组合物和在活性光线照射到基材上时产生水的光敏剂，形成非挥发性高性能铁电薄膜存储器的图案。 所得的膜根据规定的图案暴露于活性射线以形成图像并用溶剂显影以除去未曝光的部分，然后对剩余的暴露部分进行热处理，以将暴露部分转化为电介质 包含如下式（I）所示的金属氧化物的物质：（Bi 2 O 2）2+（Am-1BmO 3 m + 1）2-（I）其中A是选自Ba，Sr，Pb中的一种或多种元素 和Bi B是选自Ti，Nb和Ta中的一种或多种元素; m为2〜5的整数。

    High-purity TI complexes, methods for producing the same and BST film-forming liquid compositions
    10.
    发明授权
    High-purity TI complexes, methods for producing the same and BST film-forming liquid compositions 失效
    高纯度TI复合物，其制备方法和BST成膜液体组合物

    公开(公告)号：US5767302A

    公开(公告)日：1998-06-16

    申请号：US688774

    申请日：1996-07-31

    申请人： Katsumi Ogi ,  Hiroto Uchida ,  Atsushi Itsuki ,  Kazuo Wakabayashi

    发明人： Katsumi Ogi ,  Hiroto Uchida ,  Atsushi Itsuki ,  Kazuo Wakabayashi

    IPC分类号： C07F7/00 ,  C23C16/40 ,  H01L21/314 ,  H01L21/316 ,  C07F7/28 ,  C04B35/00 ,  C04B35/46

    CPC分类号： H01L21/31691 ,  C07F7/006 ,  C23C16/409

    摘要： Two types of high-purity Ti complexes, �TiO(DPM: dipivaloylmethane).sub.2 !.sub.2 and cis-Ti(O-t-Bu).sub.2 (DPM).sub.2, and BST film-forming liquid compositions comprising solutions of either of the two types of high-purity Ti complexes and Ba(DPM).sub.2 and/or Sr(DPM).sub.2 in organic solvents can be used to form BST films. Crystals of the former complex are produced by adding purified water to a solution of TiCl.sub.2 (DPM).sub.2 in an organic solution, adding an alkali chemical to the solution to adjust the pH to 6.0-8.0 to thereby produce turbidity, and separating the organic layer which is then washed with water and heated to reflux. Crystals of the latter complex is produced by adding HDPM to a solution of Ti(O-t-Bu).sub.4 in an organic solvent, and heating the solution to reflux.

    摘要翻译： 两种类型的高纯Ti配合物[TiO（DPM：二新戊酰甲烷）2] 2和顺式-Ti（Ot-Bu）2（DPM）2和BST成膜液体组合物包含两种 高纯Ti配合物和Ba（DPM）2和/或Sr（DPM）2在有机溶剂中可用于形成BST膜。 通过将纯化水加入到有机溶液中的TiCl 2（DPM）2的溶液中，向该溶液中加入碱性化学品以将pH调节至6.0-8.0，由此产生浊度并分离出有机层 然后将其用水洗涤并加热至回流。 通过将HDPM加入到有机溶剂中的Ti（O-t-Bu）4的溶液中并将溶液加热回流来制备后一复合物的晶体。