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    Superconducting device
    1.
    发明授权
    Superconducting device 失效
    超导装置

    公开(公告)号：US5834794A

    公开(公告)日：1998-11-10

    申请号：US848268

    申请日：1997-04-29

    申请人： Hiroyuki Fuke ,  Kazuo Saitoh ,  Youichi Enomoto

    发明人： Hiroyuki Fuke ,  Kazuo Saitoh ,  Youichi Enomoto

    IPC分类号： G01R33/035 ,  H01L39/22 ,  H01L39/24 ,  H03K19/195 ,  H01L29/06

    CPC分类号： H03K19/1952

    摘要： Disclosed is a superconducting device comprising a logic SQUID and a readout SQUID magnetically coupled with the logic SQUID, which are fabricated using a single layer of an oxide high-temperature superconductor, wherein the logic SQUID comprising a superconducting loop constituted by a first superconducting line, a second superconducting line arranged to be parallel to the first superconducting line, third and fourth superconducting lines provided to connect the first and second superconducting lines, and two Josephson junctions formed in the third and fourth superconducting lines, and widths W.sub.1 and W.sub.2 of the first and second superconducting lines are larger than a distance d between them, the width W.sub.2 is larger than the width W.sub.1, and the widths W.sub.1 and W.sub.2 are larger than the widths W.sub.3 and W.sub.4 of the third and fourth superconducting lines.

    摘要翻译： 公开了一种超导装置，其包括逻辑SQUID和与逻辑SQUID磁耦合的读出SQUID，其使用单层氧化物高温超导体制造，其中包括由第一超导线构成的超导环路的逻辑SQUID， 布置成与第一超导线平行的第二超导线，设置成连接第一和第二超导线的第三和第四超导线以及形成在第三和第四超导线中的两个约瑟夫逊结，以及形成在第一和第二超导线中的第一和第四超导线的宽度W1和W2 并且第二超导线大于它们之间的距离d，宽度W2大于宽度W1，并且宽度W1和W2大于第三和第四超导线的宽度W3和宽度W4。

    Rapid single-flux-quantum logic circuit and rapid single-flux-quantum output conversion circuit
    3.
    发明授权
    Rapid single-flux-quantum logic circuit and rapid single-flux-quantum output conversion circuit 失效
    快速单通量 - 量子逻辑电路和快速单通量 - 量子输出转换电路

    公开(公告)号：US06724216B2

    公开(公告)日：2004-04-20

    申请号：US10142932

    申请日：2002-05-13

    申请人： Hideo Suzuki ,  Shuichi Nagasawa ,  Kazunori Miyahara ,  Youichi Enomoto

    发明人： Hideo Suzuki ,  Shuichi Nagasawa ,  Kazunori Miyahara ,  Youichi Enomoto

    IPC分类号： H03K19195

    CPC分类号： H03K19/1954

    摘要： A rapid single-flux-quantum RSFQ logic circuit includes a first circuit portion having a first end grounded and having in-series connected first and second Josephson junctions. A second circuit portion has a first end grounded and has in-series connected third and fourth Josephson junctions. A first inductance element connects a second end of the first circuit portion to a second end of the second circuit portion. A tap is provided in the first inductance element, an input current signal being supplied to the tap. A bias current source is connected to a first connection node between the first and second Josephson junctions. A second inductance element connects the first connection node to a second connection node between the third and fourth Josephson junctions. A superconducting quantum interference device has fifth and sixth Josephson junctions and is coupled to the second inductance element through a magnetic field.

    摘要翻译： 快速单通量量子RSFQ逻辑电路包括第一电路部分，其具有接地的第一端并具有串联连接的第一和第二约瑟夫逊结。 第二电路部分具有第一端接地并具有串联连接的第三和第四约瑟夫逊结。 第一电感元件将第一电路部分的第二端连接到第二电路部分的第二端。 在第一电感元件中提供抽头，输入电流信号被提供给抽头。 偏置电流源连接到第一和第二约瑟夫逊结之间的第一连接节点。 第二电感元件将第一连接节点连接到第三和第四约瑟夫森结之间的第二连接节点。 超导量子干涉装置具有第五和第六约瑟夫逊结，并且通过磁场耦合到第二电感元件。

    Superconducting circuit having superconductive circuit device of voltage-type logic and superconductive circuit device of fluxoid-type logic device selectively used therein
    4.
    发明授权
    Superconducting circuit having superconductive circuit device of voltage-type logic and superconductive circuit device of fluxoid-type logic device selectively used therein 有权
    超导电路具有电压型逻辑的超导电路器件和选择性地使用其中的磁通型逻辑器件的超导电路器件

    公开(公告)号：US06242939B1

    公开(公告)日：2001-06-05

    申请号：US09517444

    申请日：2000-03-02

    申请人： Shuichi Nagasawa ,  Kazunori Miyahara ,  Youichi Enomoto

    发明人： Shuichi Nagasawa ,  Kazunori Miyahara ,  Youichi Enomoto

    IPC分类号： H03K19195

    CPC分类号： G11C11/44 ,  H03K19/1958

    摘要： A superconducting circuit device of a voltage-type logic device is large in current driving capability and, accordingly, electric power consumption; however, the switching speed is not so fast, and a superconducting circuit device of a fluxoid-type logic device is small in current driving capability and, accordingly, the electric power consumption; however the switching speed is faster than that of the superconducting circuit device of the voltage-type logic device, wherein the superconducting circuit device of the voltage-type logic device and the superconducting circuit device of the fluxoid-type logic device are selectively used in a superconducting circuit such as a superconducting random access memory, a superconducting NOR circuit and a superconducting signal converting circuit so as to realize small electric power consumption and high-speed switching action.

    摘要翻译： 电压型逻辑器件的超导电路器件的电流驱动能力大，因此电耗; 然而，切换速度不是那么快，而磁通型逻辑装置的超导电路装置的电流驱动能力较小，因此电力消耗; 然而开关速度比电压型逻辑器件的超导电路器件更快，其中电压型逻辑器件的超导电路器件和磁通型逻辑器件的超导电路器件选择性地用于 超导电路如超导随机存取存储器，超导NOR电路和超导信号转换电路，以实现小功耗和高速切换动作。

    Oxide superconductor multilayered film and oxide superconductor josephson device
    6.
    发明授权
    Oxide superconductor multilayered film and oxide superconductor josephson device 失效
    氧化物超导体多层膜和氧化物超导体约瑟夫森装置

    公开(公告)号：US6011981A

    公开(公告)日：2000-01-04

    申请号：US814172

    申请日：1997-03-10

    申请人： Gustavo Alvarez ,  Furen Wang ,  Jian-Guo Wen ,  Naoki Koshizuka ,  Youichi Enomoto ,  Tadashi Utagawa ,  Shoji Tanaka

    发明人： Gustavo Alvarez ,  Furen Wang ,  Jian-Guo Wen ,  Naoki Koshizuka ,  Youichi Enomoto ,  Tadashi Utagawa ,  Shoji Tanaka

    IPC分类号： H01L39/12 ,  H01L39/22

    CPC分类号： H01L39/128 ,  H01L39/225 ,  Y10S505/702

    摘要： An oxide superconducting multilayered thin film structure having a laminated layer structure of oxide superconductor thin film layers and non-superconductor thin film layers constituted by a combination of material groups for making strain free interfaces among both thin film layers. For example, an oxide superconductor multilayered film constituted by a laminated layer structure where thin films of an oxide superconductor represented by the chemical formula of M'Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (M'; a rare earth element of Nd, Sm, Eu or the like or an alloy of these, .delta.; oxygen depletion amount) and thin films of an oxide represented by the chemical formula of M*Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (M*; an element of Pr, Sc or the like or an alloy of these, .delta.; oxygen depletion amount) are alternately stacked. The oxide thin films are thin films fabricated by a pulsed laser deposition process or a sputtering process. A Josephson device can be provided by using the multilayered film.

    摘要翻译： 一种氧化物超导多层薄膜结构，其具有由氧化物超导体薄膜层和非超导体薄膜层组成的层叠层结构，所述非超导薄膜层由两个薄膜层之间形成无应力界面的材料组合组成。 例如，由M'Ba2Cu3O7-δ（M'，Nd，Sm，Eu等的稀土元素表示的氧化物超导体的薄膜的层叠层结构构成的氧化物超导体多层膜， 这些的合金，δ;氧耗尽量）和由化学式M * Ba2Cu3O7-δ（M *; Pr，Sc等元素或它们的合金，δ;氧气）表示的氧化物薄膜 耗尽量）交替堆叠。 氧化物薄膜是通过脉冲激光沉积工艺或溅射工艺制造的薄膜。 可以通过使用多层膜来提供约瑟夫森装置。