公开(公告)号：US07250320B2

公开(公告)日：2007-07-31

申请号：US10512131

申请日：2004-02-19

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki ,  Toyoharu Oohata

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki ,  Toyoharu Oohata

IPC分类号： H01L29/22

CPC分类号： H01L33/20 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/24 ,  H01L33/32 ,  H01L2224/48137

摘要： A semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method thereof are provided.An n-type GaN layer is grown on a sapphire substrate, and a growth mask of SiN, for example, is formed thereon. On the n-type GaN layer exposed through an opening in the growth mask, a six-sided steeple-shaped n-type GaN layer is selectively grown, which has inclined crystal planes each composed of a plurality of crystal planes inclined from the major surface of the sapphire substrate by different angles of inclination to exhibit a convex plane as a whole. On the n-type GaN layer, an active layer and a p-type GaN layer are grown to make a light emitting element structure. Thereafter, a p-side electrode and an n-side electrode are formed.

摘要翻译： 提供半导体发光元件，其制造方法，集成半导体发光器件，其制造方法，照明器件及其制造方法。 在蓝宝石衬底上生长n型GaN层，例如在其上形成SiN的生长掩模。 在通过生长掩模中的开口暴露的n型GaN层上，选择性地生长六边形尖状n型GaN层，其倾斜晶面各自由从主表面倾斜的多个晶面构成 的蓝宝石衬底由不同的倾斜角度整体呈现凸面。 在n型GaN层上生长有源层和p型GaN层以制成发光元件结构。 此后，形成p侧电极和n侧电极。

公开(公告)号：US20050145865A1

公开(公告)日：2005-07-07

申请号：US10512131

申请日：2004-02-19

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki ,  Toyoharu Oohata

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki ,  Toyoharu Oohata

IPC分类号： C23C16/34 ,  C02F1/24 ,  H01L21/28 ,  H01L33/08 ,  H01L33/16 ,  H01L33/32 ,  H01L33/00

CPC分类号： H01L33/20 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/24 ,  H01L33/32 ,  H01L2224/48137

摘要： A semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method thereof are provided. An n-type GaN layer is grown on a sapphire substrate, and a growth mask of SiN, for example, is formed thereon. On the n-type GaN layer exposed through an opening in the growth mask, a six-sided steeple-shaped n-type GaN layer is selectively grown, which has inclined crystal planes each composed of a plurality of crystal planes inclined from the major surface of the sapphire substrate by different angles of inclination to exhibit a convex plane as a whole. On the n-type GaN layer, an active layer and a p-type GaN layer are grown to make a light emitting element structure. Thereafter, a p-side electrode and an n-side electrode are formed.

摘要翻译： 提供半导体发光元件，其制造方法，集成半导体发光器件，其制造方法，照明器件及其制造方法。 在蓝宝石衬底上生长n型GaN层，例如在其上形成SiN的生长掩模。 在通过生长掩模中的开口暴露的n型GaN层上，选择性地生长六边形尖状n型GaN层，其倾斜晶面各自由从主表面倾斜的多个晶面构成 的蓝宝石衬底由不同的倾斜角度整体呈现凸面。 在n型GaN层上生长有源层和p型GaN层以制成发光元件结构。 此后，形成p侧电极和n侧电极。

公开(公告)号：US20070187704A1

公开(公告)日：2007-08-16

申请号：US11691299

申请日：2007-03-26

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki ,  Toyoharu Oohata

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki ,  Toyoharu Oohata

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/24 ,  H01L33/32 ,  H01L2224/48137

摘要： A semiconductor light emitting element, manufacturing method. thereof, integrated semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method thereof are provided. An n-type GaN layer is grown on a sapphire substrate, and a growth mask of SiN, for example, is formed thereon. On the n-type GaN layer exposed through an opening in the growth mask, a six-sided steeple-shaped n-type GaN layer is selectively grown, which has inclined crystal planes each composed of a plurality of crystal planes inclined from the major surface of the sapphire substrate by different angles of inclination to exhibit a convex plane as a whole. On the n-type GaN layer, an active layer and a p-type GaN layer are grown to make a light emitting element structure. Thereafter, a p-side electrode and an n-side electrode are formed.

摘要翻译： 半导体发光元件，制造方法。 提供集成半导体发光器件，其制造方法，照明器件及其制造方法。 在蓝宝石衬底上生长n型GaN层，例如在其上形成SiN的生长掩模。 在通过生长掩模中的开口暴露的n型GaN层上，选择性地生长六边形尖状n型GaN层，其倾斜晶面各自由从主表面倾斜的多个晶面构成 的蓝宝石衬底，通过不同的倾斜角度整体呈现凸面。 在n型GaN层上生长有源层和p型GaN层以制成发光元件结构。 此后，形成p侧电极和n侧电极。

公开(公告)号：US07564064B2

公开(公告)日：2009-07-21

申请号：US11682770

申请日：2007-03-06

申请人： Toyoharu Oohata ,  Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki

发明人： Toyoharu Oohata ,  Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki

IPC分类号： H01L27/15

CPC分类号： H01L33/20 ,  H01L33/007 ,  H01L33/24

摘要： An n-type GaN layer is grown onto a sapphire substrate and a hexagonal etching mask is formed onto the n-type GaN layer as provided. The n-type GaN layer is etched to a predetermined depth by using the etching mask by the RIE method. A hexagonal prism portion whose upper surface is a C plane is formed. After the etching mask was removed, an active layer and a p-type GaN layer are sequentially grown onto the whole surface of the substrate so as to cover the hexagonal prism portion, thereby forming a light emitting device structure. After that, a p-side electrode is formed onto the p-type GaN layer of the hexagonal prism portion and an n-side electrode is formed onto the n-type GaN layer.

摘要翻译： 在蓝宝石衬底上生长n型GaN层，并且在所提供的n型GaN层上形成六边形蚀刻掩模。 通过使用RIE法的蚀刻掩模将n型GaN层蚀刻到预定深度。 形成上表面为C面的六边形棱镜部。 在除去蚀刻掩模之后，将有源层和p型GaN层依次生长到基板的整个表面上以覆盖六边形棱镜部分，从而形成发光器件结构。 之后，在六边形棱镜部分的p型GaN层上形成p侧电极，在n型GaN层上形成n侧电极。

公开(公告)号：US20070190677A1

公开(公告)日：2007-08-16

申请号：US11691292

申请日：2007-03-26

申请人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki ,  Toyoharu Oohata

发明人： Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki ,  Toyoharu Oohata

IPC分类号： H01L21/00

CPC分类号： H01L33/20 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/24 ,  H01L33/32 ,  H01L2224/48137

摘要： A semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method thereof are provided. An n-type GaN layer is grown on a sapphire substrate, and a growth mask of SiN, for example, is formed thereon. On the n-type GaN layer exposed through an opening in the growth mask, a six-sided steeple-shaped n-type GaN layer is selectively grown, which has inclined crystal planes each composed of a plurality of crystal planes inclined from the major surface of the sapphire substrate by different angles of inclination to exhibit a convex plane as a whole. On the n-type GaN layer, an active layer and a p-type GaN layer are grown to make a light emitting element structure. Thereafter, a p-side electrode and an n-side electrode are formed.

摘要翻译： 提供半导体发光元件，其制造方法，集成半导体发光器件，其制造方法，照明器件及其制造方法。 在蓝宝石衬底上生长n型GaN层，例如在其上形成SiN的生长掩模。 在通过生长掩模中的开口暴露的n型GaN层上，选择性地生长六边形尖状n型GaN层，其倾斜晶面各自由从主表面倾斜的多个晶面构成 的蓝宝石衬底由不同的倾斜角度整体呈现凸面。 在n型GaN层上生长有源层和p型GaN层以制成发光元件结构。 此后，形成p侧电极和n侧电极。

公开(公告)号：US20070147453A1

公开(公告)日：2007-06-28

申请号：US11682770

申请日：2007-03-06

申请人： Toyoharu Oohata ,  Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki

发明人： Toyoharu Oohata ,  Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki

IPC分类号： H01S5/00 ,  H01S3/04

CPC分类号： H01L33/20 ,  H01L33/007 ,  H01L33/24

摘要： An n-type GaN layer is grown onto a sapphire substrate and a hexagonal etching mask is formed onto the n-type GaN layer as provided. The n-type GaN layer is etched to a predetermined depth by using the etching mask by the RIE method. A hexagonal prism portion whose upper surface is a C plane is formed. After the etching mask was removed, an active layer and a p-type GaN layer are sequentially grown onto the whole surface of the substrate so as to cover the hexagonal prism portion, thereby forming a light emitting device structure. After that, a p-side electrode is formed onto the p-type GaN layer of the hexagonal prism portion and an n-side electrode is formed onto the n-type GaN layer.

摘要翻译： 在蓝宝石衬底上生长n型GaN层，并且在所提供的n型GaN层上形成六边形蚀刻掩模。 通过使用RIE法的蚀刻掩模将n型GaN层蚀刻到预定深度。 形成上表面为C面的六边形棱镜部。 在除去蚀刻掩模之后，将有源层和p型GaN层依次生长到基板的整个表面上以覆盖六边形棱镜部分，从而形成发光器件结构。 之后，在六边形棱镜部分的p型GaN层上形成p侧电极，在n型GaN层上形成n侧电极。

公开(公告)号：US07205168B2

公开(公告)日：2007-04-17

申请号：US10494972

申请日：2003-09-08

申请人： Toyoharu Oohata ,  Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki

发明人： Toyoharu Oohata ,  Hiroyuki Okuyama ,  Masato Doi ,  Goshi Biwa ,  Jun Suzuki

IPC分类号： H01L21/00

CPC分类号： H01L33/20 ,  H01L33/007 ,  H01L33/24

摘要： An n-type GaN layer is grown onto a sapphire substrate and a hexagonal etching mask is formed onto the n-type GaN layer as provided. The n-type GaN layer is etched to a predetermined depth by using the etching mask by the RIE method. A hexagonal prism portion whose upper surface is a C plane is formed. After the etching mask was removed, an active layer and a p-type GaN layer are sequentially grown onto the whole surface of the substrate so as to cover the hexagonal prism portion, thereby forming a light emitting device structure. After that, a p-side electrode is formed onto the p-type GaN layer of the hexagonal prism portion and an n-side electrode is formed onto the n-type GaN layer.

摘要翻译： 在蓝宝石衬底上生长n型GaN层，并且在所提供的n型GaN层上形成六边形蚀刻掩模。 通过使用RIE法的蚀刻掩模将n型GaN层蚀刻到预定深度。 形成上表面为C面的六边形棱镜部。 在除去蚀刻掩模之后，将有源层和p型GaN层依次生长到基板的整个表面上以覆盖六边形棱镜部分，从而形成发光器件结构。 之后，在六边形棱镜部分的p型GaN层上形成p侧电极，在n型GaN层上形成n侧电极。

公开(公告)号：US20060169997A1

公开(公告)日：2006-08-03

申请号：US11329589

申请日：2006-01-10

申请人： Jun Suzuki ,  Masato Doi ,  Hiroyuki Okuyama ,  Goshi Biwa

发明人： Jun Suzuki ,  Masato Doi ,  Hiroyuki Okuyama ,  Goshi Biwa

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  Y10S257/918

摘要： A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes a laminated semiconductor structure portion composed of at least a first conductivity type first cladding layer, an active layer and a second conductivity type second cladding layer, wherein an outer peripheral surface of this laminated semiconductor structure portion is formed as a curved surface shape which is protrusively curved or bent with respect to the outside of the laminated direction.

摘要翻译： 提供了一种半导体发光器件。 半导体发光装置包括由至少第一导电型第一包层，有源层和第二导电型第二包层构成的层叠半导体结构部，其中，该层叠半导体结构部的外周面形成为 相对于层叠方向的外侧突出地弯曲或弯曲的曲面形状。

公开(公告)号：US20060170001A1

公开(公告)日：2006-08-03

申请号：US11331290

申请日：2006-01-12

申请人： Jun Suzuki ,  Masato Doi ,  Goshi Biwa ,  Hiroyuki Okuyama

发明人： Jun Suzuki ,  Masato Doi ,  Goshi Biwa ,  Hiroyuki Okuyama

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  H01L33/40

摘要： A semiconductor light-emitting device is provided. In an InGaN-based semiconductor light-emitting device including an Ag electrode, a semiconductor layer on the contact side of at least the Ag electrode is a dislocation semiconductor layer of which dislocation density is selected to be less than 1×107 (1/cm2) and thereby short-circuit caused by Ag migration generated along this dislocation can be avoided. Thus, this semiconductor light-emitting device is able to solve a problem of a shortened life and a problem with the fraction of defective devices encountered with the InGaN-based semiconductor light-emitting device.

摘要翻译： 提供了一种半导体发光器件。 在包括Ag电极的InGaN系半导体发光器件中，至少Ag电极的接触侧的半导体层是位错密度选择为小于1×10 7（1 / cm 2），从而可以避免沿着该位错产生的Ag迁移引起的短路。 因此，该半导体发光器件能够解决寿命缩短的问题，并且能够解决InGaN系半导体发光元件遇到的缺陷器件的分数的问题。

公开(公告)号：US07468528B2

公开(公告)日：2008-12-23

申请号：US11329589

申请日：2006-01-10

申请人： Jun Suzuki ,  Masato Doi ,  Hiroyuki Okuyama ,  Goshi Biwa

发明人： Jun Suzuki ,  Masato Doi ,  Hiroyuki Okuyama ,  Goshi Biwa

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  Y10S257/918

摘要： A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes a laminated semiconductor structure portion composed of at least a first conductivity type first cladding layer, an active layer and a second conductivity type second cladding layer, wherein an outer peripheral surface of this laminated semiconductor structure portion is formed as a curved surface shape which is protrusively curved or bent with respect to the outside of the laminated direction.

摘要翻译： 提供了一种半导体发光器件。 半导体发光装置包括由至少第一导电型第一包层，有源层和第二导电型第二包层构成的层叠半导体结构部，其中，该层叠半导体结构部的外周面形成为 相对于层叠方向的外侧突出地弯曲或弯曲的曲面形状。